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1. 发明申请

US20120223286A1 ELECTROFORMING-FREE NANOSCALE SWITCHING DEVICE 有权
标题翻译：无电极纳米开关器件
公开(公告)号：US20120223286A1
公开(公告)日：2012-09-06
申请号：US13259173
申请日：2009-07-30
申请人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
发明人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
IPC分类号： H01L45/00
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译：构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。开关装置具有设置在两个电极之间的有源区域。有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。开关层的厚度为6nm以下。

2. 发明授权

US08519372B2 Electroforming-free nanoscale switching device 有权
标题翻译：无电成形纳米级开关器件
公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
申请人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
发明人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译：构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。开关装置具有设置在两个电极之间的有源区域。有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。开关层的厚度为6nm以下。

3. 发明申请

US20120074378A1 MEMORY ELEMENT HAVING ELASTICALLY DEFORMABLE ACTIVE REGION 审中-公开
标题翻译：具有弹性变形活动区域的记忆元件
公开(公告)号：US20120074378A1
公开(公告)日：2012-03-29
申请号：US12889389
申请日：2010-09-23
申请人： Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
发明人： Wei Wu , Jianhua Yang , Zhiyong Li , Shih-Yuan Wang , Dmitri Strukov , Alexandre Bratkovski
IPC分类号： H01L45/00 , H01L25/03
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/0016 , G11C13/0069 , G11C2013/0095 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11551 , H01L27/2472 , H01L27/2481 , H01L29/86 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/146
摘要： A memory element is provided that includes a first electrode, a second electrode, and an active region disposed between the first electrode and the second electrode, wherein at least a portion of the active region comprises an elastically deformable material, and wherein deformation of the elastically deformable material causes said memory element to change from a lower conductive state to a higher conductive state. A multilayer structure also is provided that includes a base and a multilayer circuit disposed above the base, where the multilayer circuit includes at least of the memory elements including the elastically deformable material.
摘要翻译：提供了一种存储元件，其包括第一电极，第二电极和设置在第一电极和第二电极之间的有源区，其中有源区的至少一部分包括可弹性变形的材料，并且其中弹性变形可变形材料使得所述存储元件从较低的导电状态变为较高的导电状态。还提供了一种多层结构，其包括设置在基底之上的基底和多层电路，其中多层电路至少包括包括可弹性变形的材料的存储元件。

4. 发明申请

US20110309321A1 MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES 有权
标题翻译：具有包含多个相位的复合材料的开关层的电容器
公开(公告)号：US20110309321A1
公开(公告)日：2011-12-22
申请号：US12819763
申请日：2010-06-21
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L27/24 , H01L21/26 , H01L45/00
CPC分类号： H01L27/24 , G11C13/0007 , G11C2213/52 , H01L45/04 , H01L45/145
摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
摘要翻译：公开了具有包括多相复合的开关层的忆阻器。忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相，在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。还公开了制造忆阻器和使用忆阻器的横杆的方法。

5. 发明授权

US09024285B2 Nanoscale switching devices with partially oxidized electrodes 有权
标题翻译：具有部分氧化电极的纳米开关器件
公开(公告)号：US09024285B2
公开(公告)日：2015-05-05
申请号：US13636814
申请日：2010-04-19
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1253 , H01L45/146 , Y10S438/90
摘要： A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：提供了纳米尺度的开关装置。该装置包括：纳米级宽度的第一电极; 纳米级宽度的第二电极; 有源区域设置在第一和第二电极之间，有源区域具有非导电部分，其包括电子半导体或名义绝缘以及能够承载一种掺杂剂并在电场下传输掺杂剂的弱离子导体开关材料，以及用作掺杂剂的源或汇的源部分; 以及形成在第一电极之间，第一电极和有源区之间或形成在第二电极上的第二电极和有源区之间的氧化物层。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

6. 发明授权

US08891284B2 Memristors based on mixed-metal-valence compounds 有权
标题翻译：基于混合金属化合物的忆阻器
公开(公告)号：US08891284B2
公开(公告)日：2014-11-18
申请号：US13383572
申请日：2009-09-04
申请人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
发明人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00 , G11C13/00 , H01L29/861
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor based on mixed-metal-valence compounds comprises: a first electrode; a second electrode; a layer of a mixed-metal-valence phase in physical contact with at least one layer of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field. One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer of a fully oxidized phase and the other is in electrical contact with the layer (or other layer) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode and an ON-switched diode are also provided. A method of operating the memristor is further provided.
摘要翻译：基于混合金属价化合物的忆阻器包括：第一电极; 第二电极; 与至少一层完全氧化相物理接触的混合金属价态相的一层。混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场漂移进入和离开完全氧化相。第一和第二电极之一与混合金属化合物相的层或完全氧化相的层电接触，另一个与完全氧化的层（或其它层）电接触相。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。还提供了可逆二极管和ON开关二极管。还提供了一种操作忆阻器的方法。

7. 发明授权

US08415652B2 Memristors with a switching layer comprising a composite of multiple phases 有权
标题翻译：具有包括多相复合材料的开关层的忆阻器
公开(公告)号：US08415652B2
公开(公告)日：2013-04-09
申请号：US12819763
申请日：2010-06-21
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L29/02
CPC分类号： H01L27/24 , G11C13/0007 , G11C2213/52 , H01L45/04 , H01L45/145
摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
摘要翻译：公开了具有包括多相复合的开关层的忆阻器。忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相，在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。还公开了制造忆阻器和使用忆阻器的横杆的方法。

8. 发明申请

US20120018698A1 LOW-POWER NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL 审中-公开
标题翻译：具有非均质切换材料的低功耗纳米开关器件
公开(公告)号：US20120018698A1
公开(公告)日：2012-01-26
申请号：US13259180
申请日：2009-08-31
申请人： Jianhua Yang , R. Stanley Williams , Gilberto Ribeiro
发明人： Jianhua Yang , R. Stanley Williams , Gilberto Ribeiro
IPC分类号： H01L27/24 , H01L21/62 , H01L45/00
CPC分类号： G11C13/0007 , B82Y10/00 , G11C13/0009 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/77 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/148 , H01L45/1625
摘要： A nanoscale switching device exhibits multiple desired properties including a low switching current level, being electroforming-free, and cycling endurance. The switching device has an active region disposed between two electrodes. The active region contains a switching material capable of transporting dopants under an electric field. The switching material is in an amorphous state and formed by deposition at or below room temperature.
摘要翻译：纳米级开关器件表现出多种所需性能，包括低开关电流水平，无电铸和循环耐久性。开关装置具有设置在两个电极之间的有源区域。有源区域包含能够在电场下输送掺杂剂的开关材料。开关材料处于非晶状态并通过在室温或室温下沉积而形成。

9. 发明授权

US08546785B2 Memristive device 有权
标题翻译：忆阻器
公开(公告)号：US08546785B2
公开(公告)日：2013-10-01
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译：忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。有源区设置在第一和第二电极之间。活性区域有缺陷。石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。

10. 发明申请

US20110240951A1 MEMRISTIVE DEVICE 有权
标题翻译：测量装置
公开(公告)号：US20110240951A1
公开(公告)日：2011-10-06
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/24 , H01L45/00 , H01L21/20
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译：忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。有源区设置在第一和第二电极之间。活性区域有缺陷。石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。

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