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131. 发明申请

US20080268635A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS 审中-公开
标题翻译：在铜接触应用中形成钴和钴硅材料的方法
公开(公告)号：US20080268635A1
公开(公告)日：2008-10-30
申请号：US12111930
申请日：2008-04-29
申请人： Sang-Ho Yu , Kevin Ti Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan , Amit Khandelwal , Kai Wu
发明人： Sang-Ho Yu , Kevin Ti Moraes , Seshadri Ganguli , Hua Chung , See-Eng Phan , Amit Khandelwal , Kai Wu
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/0227 , C23C16/08 , C23C16/42 , C23C16/4554 , C23C16/4586 , C23C16/56 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.
摘要翻译：本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。在一个实施例中，提供了一种在衬底上形成硅化钴材料的方法，其包括用至少一种预清洗方法处理衬底以暴露含硅表面，在含硅表面上沉积钴硅化物材料，以及沉积在钴硅化物材料上的铜材料。在另一个实施例中，在沉积铜材料之前，可以在钴硅化物材料上沉积金属钴材料。在一个示例中，铜材料可以通过在基底上沉积铜籽晶层和铜体积层而形成。铜种子层可以通过PVD工艺沉积，并且铜体积层可以通过ECP工艺或无电沉积工艺沉积。

132. 发明申请

US20070026147A1 ENHANCED COPPER GROWTH WITH ULTRATHIN BARRIER LAYER FOR HIGH PERFORMANCE INTERCONNECTS 有权
标题翻译：用于高性能互连的超级屏障层的增强铜生长
公开(公告)号：US20070026147A1
公开(公告)日：2007-02-01
申请号：US11470922
申请日：2006-09-07
申请人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
发明人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
摘要翻译：提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

133. 发明授权

US07081271B2 Cyclical deposition of refractory metal silicon nitride 有权
$Cyclical deposition of refractory metal silicon nitride$
标题翻译：难熔金属氮化硅的循环沉积
公开(公告)号：US07081271B2
公开(公告)日：2006-07-25
申请号：US10199419
申请日：2002-07-18
申请人： Hua Chung , Ling Chen , Barry L. Chin
发明人： Hua Chung , Ling Chen , Barry L. Chin
IPC分类号： C23C16/34
CPC分类号： C23C16/45531 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one cycle of precursors includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor, wherein the pulses of two of the three precursors are introduced simultaneously or sequentially. In another embodiment, the method includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, repeating the introduction of the first and the second precursors at least one time to form a binary material layer on the substrate surface, and introducing a pulse of a third precursor to form the ternary material layer.
摘要翻译：本发明的实施例涉及利用三种或更多种前体的循环层沉积的装置和方法。在一个实施方案中，该方法包括提供至少一个循环的前体以形成三元材料层。提供至少一个前体循环包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中三个前体中的两个的脉冲同时或顺序地引入。在另一个实施例中，该方法包括引入第一前体的脉冲，引入第二前体的脉冲，至少一次重复引入第一和第二前体，以在衬底表面上形成二元材料层，并引入形成三元材料层的第三前体的脉冲。

134. 发明授权

US06972267B2 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 有权
标题翻译：使用含钽前体和含氮前体连续沉积氮化钽
公开(公告)号：US06972267B2
公开(公告)日：2005-12-06
申请号：US10379438
申请日：2003-03-04
申请人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
IPC分类号： C23C16/04 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/31 , H01L21/469
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3 (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.
摘要翻译：公开了一种方法和装置，其特征是使用诸如原子层沉积（ALD）的顺序沉积技术沉积钽膜。该方法包括将基底连续暴露于含氮气体（例如氨NH 3）和含钽气体的流动。含钽气体由吸附在上面的前驱物（TBTET）Ta（NET 2 N 3）3（TBTDET）形成，底物。在将TBTDET吸附到基底层上之前，将TBTDET前体在预定的温度范围内加热。

135. 发明授权

US06939804B2 Formation of composite tungsten films 有权
公开(公告)号：US06939804B2
公开(公告)日：2005-09-06
申请号：US10299212
申请日：2002-11-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

136. 发明授权

US06939801B2 Selective deposition of a barrier layer on a dielectric material 失效
标题翻译：阻挡层在电介质材料上的选择性沉积
公开(公告)号：US06939801B2
公开(公告)日：2005-09-06
申请号：US10319788
申请日：2002-12-13
申请人： Hua Chung , Ling Chen , Vincent W. Ku , Michael X. Yang , Gongda Yao
发明人： Hua Chung , Ling Chen , Vincent W. Ku , Michael X. Yang , Gongda Yao
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , H01L21/28562 , H01L21/76844
摘要： A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.
摘要翻译：公开了一种选择性地将阻挡层沉积在围绕衬底上的一个或多个金属互连的电介质材料上的方法。使用包括预定数量的沉积循环，然后进行吹扫步骤的循环沉积工艺，将选择性地沉积在金属膜上。每个沉积循环包括在处理室中在形成在基底上的电介质材料上交替地吸附含难熔金属的前体和还原气体。

137. 发明授权

US06660126B2 Lid assembly for a processing system to facilitate sequential deposition techniques 失效
公开(公告)号：US06660126B2
公开(公告)日：2003-12-09
申请号：US09798251
申请日：2001-03-02
申请人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
发明人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
IPC分类号： H05H100
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4411 , C23C16/452 , H01L21/67017
摘要： A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

138. 发明授权

US6157120A Shadow mask for color CRT having different vertical pitch for outer periphery of the display than inner portion of the display 有权
标题翻译：用于彩色CRT的阴影掩模，与显示器的内部部分相比，显示器的外周具有不同的垂直间距
公开(公告)号：US6157120A
公开(公告)日：2000-12-05
申请号：US161245
申请日：1998-09-25
申请人： Ching-Hsian Tseng , Hua Chung , Kuo-Cheng Chen
发明人： Ching-Hsian Tseng , Hua Chung , Kuo-Cheng Chen
IPC分类号： H01J29/07 , H01J29/80
CPC分类号： H01J29/076 , H01J2229/0788
摘要： A color cathode ray tube (CRT) employs a color selection electrode in the form of a thin shadow mask located adjacent the CRT's display screen and having an array of electron beam passing apertures arranged in vertical columns and horizontal rows. To correct for electron beam landing tilt of three inline electron beams on the CRT's display screen arising from the spherical shape of the CRT's shadow mask and display screen, the shadow mask is provided with a two-step function defining the vertical pitch (P.sub.v) of its apertures, or the vertical spacing between adjacent apertures not in the same vertical column. A first quadratic equation is used for defining the vertical pitch of the shadow mask's beam passing apertures covering a first generally flat inner area of the CRT's display screen from the center of the display screen out to where its radius of curvature substantially decreases adjacent its periphery. A second quadratic equation defines the vertical pitch of the shadow mask's beam passing apertures covering the more highly curved, peripheral portion of the display screen to correct for electron beam landing tilt and provide improved video image color purity tolerance. The two-step vari-bow shadow mask employing dual vari-Pv quadratic equations reduces electron beam landing tilt and increases color purity tolerance in areas adjacent to the margin of the effective viewing area of the display screen without reducing the screen's effective viewing area while maintaining a high degree of video image color purity.
摘要翻译：彩色阴极射线管（CRT）采用位于CRT显示屏附近的薄阴影形式的选色电极，并具有排列成垂直列和水平行的电子束通过孔阵列。为了校正由CRT阴影掩模和显示屏幕的球形产生的CRT显示屏幕上的三个一字形电子束的电子束着陆倾斜，荫罩具有两步功能，定义垂直间距（Pv）其孔或相邻孔之间的垂直间距不在相同的垂直柱中。第一个二次方程用于定义荫罩的光束通过孔的垂直间距，其覆盖CRT显示屏的第一大致平坦的内部区域，从显示屏的中心到其周围的曲率半径基本上减小。第二个二次方程定义了荫罩的光束通过孔的垂直间距，覆盖了显示屏幕的更高度弯曲的周边部分，以校正电子束着陆倾斜并提供改进的视频图像色纯度公差。采用双Vari-Pv二次方程的两步变弓阴影掩模减少了电子束着陆倾斜，并提高了与显示屏幕有效观看区域边缘相邻的区域中的色纯度公差，而不会降低屏幕的有效视野，同时保持高度的视频图像色彩纯度。

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