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1. 发明授权

US07892602B2 Cyclical deposition of refractory metal silicon nitride 有权
$Cyclical deposition of refractory metal silicon nitride$
标题翻译：难熔金属氮化硅的循环沉积
公开(公告)号：US07892602B2
公开(公告)日：2011-02-22
申请号：US11422826
申请日：2006-06-07
申请人： Hua Chung , Ling Chen , Barry L. Chin
发明人： Hua Chung , Ling Chen , Barry L. Chin
IPC分类号： C23C16/34
CPC分类号： C23C16/45531 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.
摘要翻译：在原子层沉积（ALD）工艺中在衬底上沉积金属氮化硅层的方法。该方法提供了将处理室中的衬底定位在处理室内，该处理室包含集中的扩展通道，该通道朝向并基本上覆盖衬底呈锥形锥形，将工艺气体流入集中扩展通道以形成圆形流动图案，将衬底暴露于具有圆形流动图案，并且在ALD工艺期间将衬底依次暴露于化学前体以形成金属氮化硅材料。在一个实例中，ALD工艺顺序地将金属前体，氮前体和硅前体顺序地引入到具有圆形流动图案的工艺气体中。金属氮化硅材料可以包含钽或钛。在其它实例中，工艺气体或衬底可以暴露于等离子体。

2. 发明授权

US08318266B2 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 有权
公开(公告)号：US08318266B2
公开(公告)日：2012-11-27
申请号：US11470922
申请日：2006-09-07
申请人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
IPC分类号： C23C16/00 , C23C14/02 , H05H1/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

3. 发明授权

US07081271B2 Cyclical deposition of refractory metal silicon nitride 有权
$Cyclical deposition of refractory metal silicon nitride$
标题翻译：难熔金属氮化硅的循环沉积
公开(公告)号：US07081271B2
公开(公告)日：2006-07-25
申请号：US10199419
申请日：2002-07-18
申请人： Hua Chung , Ling Chen , Barry L. Chin
发明人： Hua Chung , Ling Chen , Barry L. Chin
IPC分类号： C23C16/34
CPC分类号： C23C16/45531 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention relate to an apparatus and method of cyclical layer deposition utilizing three or more precursors. In one embodiment, the method includes providing at least one cycle of precursors to form a ternary material layer. Providing at least one cycle of precursors includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor, wherein the pulses of two of the three precursors are introduced simultaneously or sequentially. In another embodiment, the method includes introducing a pulse of a first precursor, introducing a pulse of a second precursor, repeating the introduction of the first and the second precursors at least one time to form a binary material layer on the substrate surface, and introducing a pulse of a third precursor to form the ternary material layer.
摘要翻译：本发明的实施例涉及利用三种或更多种前体的循环层沉积的装置和方法。在一个实施方案中，该方法包括提供至少一个循环的前体以形成三元材料层。提供至少一个前体循环包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中三个前体中的两个的脉冲同时或顺序地引入。在另一个实施例中，该方法包括引入第一前体的脉冲，引入第二前体的脉冲，至少一次重复引入第一和第二前体，以在衬底表面上形成二元材料层，并引入形成三元材料层的第三前体的脉冲。

4. 发明授权

US08293328B2 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 有权
标题翻译：增强铜生长与超薄屏障层的高性能互连
公开(公告)号：US08293328B2
公开(公告)日：2012-10-23
申请号：US11470915
申请日：2006-09-07
申请人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
摘要翻译：提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

5. 发明申请

US20100099270A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20100099270A1
公开(公告)日：2010-04-22
申请号：US12646706
申请日：2009-12-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： H01L21/302 , G06F17/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

6. 发明授权

US08027746B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08027746B2
公开(公告)日：2011-09-27
申请号：US12953220
申请日：2010-11-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

7. 发明授权

US07085616B2 Atomic layer deposition apparatus 失效
公开(公告)号：US07085616B2
公开(公告)日：2006-08-01
申请号：US09917842
申请日：2001-07-27
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

8. 发明授权

US08626330B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08626330B2
公开(公告)日：2014-01-07
申请号：US13235855
申请日：2011-09-19
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

9. 发明授权

US07860597B2 Atomic layer deposition apparatus 有权
公开(公告)号：US07860597B2
公开(公告)日：2010-12-28
申请号：US12646706
申请日：2009-12-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

10. 发明授权

US07660644B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US07660644B2
公开(公告)日：2010-02-09
申请号：US11423535
申请日：2006-06-12
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

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