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1. 发明申请

US20070003698A1 ENHANCED COPPER GROWTH WITH ULTRATHIN BARRIER LAYER FOR HIGH PERFORMANCE INTERCONNECTS 有权
公开(公告)号：US20070003698A1
公开(公告)日：2007-01-04
申请号：US11470915
申请日：2006-09-07
申请人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
发明人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

2. 发明申请

US20070026147A1 ENHANCED COPPER GROWTH WITH ULTRATHIN BARRIER LAYER FOR HIGH PERFORMANCE INTERCONNECTS 有权
标题翻译：用于高性能互连的超级屏障层的增强铜生长
公开(公告)号：US20070026147A1
公开(公告)日：2007-02-01
申请号：US11470922
申请日：2006-09-07
申请人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
发明人： LING CHEN , Hua Chung , Barry Chin , Hong Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.
摘要翻译：提供了一种沉积具有约20埃或更小厚度的难熔金属氮化物阻挡层的方法。一方面，难熔金属氮化物层是通过引入含金属化合物的脉冲，随后是含氮化合物的脉冲而形成的。难熔金属氮化物阻挡层提供了足够的阻挡性能，并且允许第一金属层的晶粒生长继续穿过阻挡层进入第二金属层，从而增强了互连的电性能。

3. 发明申请

US20060216928A1 CYCLICAL DEPOSITION OF REFRACTORY METAL SILICON NITRIDE 有权
标题翻译： REFRACTORY金属硅化合物的循环沉积
公开(公告)号：US20060216928A1
公开(公告)日：2006-09-28
申请号：US11422826
申请日：2006-06-07
申请人： HUA CHUNG , LING CHEN , BARRY CHIN
发明人： HUA CHUNG , LING CHEN , BARRY CHIN
IPC分类号： H01L21/4763
CPC分类号： C23C16/45531 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the invention relate to methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. In one embodiment, the method provides positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.
摘要翻译：本发明的实施例涉及在原子层沉积（ALD）过程中在衬底上沉积金属氮化硅层的方法。在一个实施例中，该方法提供将衬底定位在处理室内，该处理室包含集中扩展通道，该中心膨胀通道朝向并基本上覆盖衬底的锥形渐缩，将工艺气体流入集中扩展通道以形成圆形流动图案，将衬底暴露于具有圆形流动图案的工艺气体，并且在ALD工艺期间将衬底依次暴露于化学前体以形成金属氮化硅材料。在一个实例中，ALD工艺顺序地将金属前体，氮前体和硅前体顺序地引入到具有圆形流动图案的工艺气体中。金属氮化硅材料可以包含钽或钛。在其它实例中，工艺气体或衬底可以暴露于等离子体。

4. 发明申请

US20080274299A1 APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US20080274299A1
公开(公告)日：2008-11-06
申请号：US12172092
申请日：2008-07-11
申请人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： LING CHEN , Vincent W. Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳衬底支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS）区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件导管。第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

5. 发明申请

US20100247767A1 GAS DELIVERY APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的气体输送装置和方法
公开(公告)号：US20100247767A1
公开(公告)日：2010-09-30
申请号：US12797999
申请日：2010-06-10
申请人： LING CHEN , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： LING CHEN , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.
摘要翻译：提供了在基板上形成薄层的装置和方法。处理室具有气体输送组件，该气体输送组件包括具有盖部分的盖和覆盖部件，该盖部分在盖的中心部分处共同限定出扩张通道，该覆盖部件具有从扩张通道延伸到外围的锥形底面覆盖部件的一部分。气体管道连接到膨胀通道并且与膨胀通道的中心成一定角度定位，以形成通过膨胀通道的圆形气流。室盖的底表面的形状和尺寸基本上覆盖基板接收表面。一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。扼流圈设置在邻近锥形底面的周边的腔室盖上。

6. 发明申请

US20080216743A1 CHEMICAL PRECURSOR AMPOULE FOR VAPOR DEPOSITION PROCESSES 有权
标题翻译：化学前驱体用于蒸气沉积过程
公开(公告)号：US20080216743A1
公开(公告)日：2008-09-11
申请号：US11849125
申请日：2007-08-31
申请人： LING CHEN , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： LING CHEN , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/06
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.
摘要翻译：本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在内部体积的较低区域。该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝着侧壁引导并从出口端口移开。在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

7. 发明申请

US20080041313A1 GAS DELIVERY APPARATUS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US20080041313A1
公开(公告)日：2008-02-21
申请号：US11925667
申请日：2007-10-26
申请人： LING CHEN , VINCENT KU , DIEN-YEH WU , HUA CHUNG , ALAN OUYE , NORMAN NAKASHIMA , MEI CHANG
发明人： LING CHEN , VINCENT KU , DIEN-YEH WU , HUA CHUNG , ALAN OUYE , NORMAN NAKASHIMA , MEI CHANG
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： Embodiments as described here provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is an ampoule assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.
摘要翻译：这里描述的实施例提供了一种用于执行原子层沉积工艺的装置和方法。在一个实施例中，沉积室组件包括具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖和从通道延伸到腔室的周边部分的底表面盖，底表面成形并定尺寸为基本上覆盖基板接收表面。该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。在一个示例中，气源是安瓿组件，其通过至少一个断开配件附接到沉积室，并且包含远离气体出口的入口管。

8. 发明申请

US20070151514A1 APPARATUS AND METHOD FOR HYBRID CHEMICAL PROCESSING 有权
标题翻译：混合化学处理装置和方法
公开(公告)号：US20070151514A1
公开(公告)日：2007-07-05
申请号：US11680995
申请日：2007-03-01
申请人： LING CHEN , Vincent Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
发明人： LING CHEN , Vincent Ku , Mei Chang , Dien-Yeh Wu , Hua Chung
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45561 , C23C16/45582 , C23C16/54
摘要： In one embodiment, an apparatus for performing an atomic layer deposition process is provided which includes a chamber body having a substrate support, a lid assembly attached to the chamber body, and delivery sub-assemblies coupled to the lid assembly and configured to deliver process gases into a centralized expanding conduit, which extends through the lid assembly and expands radially outward. The first gas delivery sub-assembly contains an annular mixing channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular mixing channel is adapted to deliver a first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. A first gas inlet may be coupled to the annular mixing channel and positioned to provide the first process gas to the annular mixing channel. The second gas delivery sub-assembly contains a second gas inlet in fluid communication to the centralized expanding conduit.
摘要翻译：在一个实施例中，提供了一种用于执行原子层沉积工艺的装置，其包括具有基板支撑件的室主体，附接到室主体的盖组件和联接到盖组件的输送子组件，并且构造成输送工艺气体进入集中扩展的管道，其延伸穿过盖组件并径向向外扩张。第一气体输送子组件包含环形混合通道，环形混合通道环绕并与中央膨胀导管流体连通，其中环形混合通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。第一气体入口可以联接到环形混合通道并且定位成将第一工艺气体提供给环形混合通道。第二气体输送子组件包含与集中扩张导管流体连通的第二气体入口。

9. 发明申请

US20080044573A1 RATE CONTROL PROCESS FOR A PRECURSOR DELIVERY SYSTEM 审中-公开
标题翻译：前置递送系统的速率控制过程
公开(公告)号：US20080044573A1
公开(公告)日：2008-02-21
申请号：US11877503
申请日：2007-10-23
申请人： LING CHEN , Phillip Kang , Seshadri Ganguli
发明人： LING CHEN , Phillip Kang , Seshadri Ganguli
IPC分类号： C23C16/44
CPC分类号： C23C16/52 , C23C16/4481 , H01L21/28556
摘要： Embodiments of the invention provide a method for monitoring and controlling delivery of a precursor from an ampoule in a process chamber. In one embodiment, the method provides flowing a first carrier gas at a first flow rate through a vessel containing a chemical precursor to form a first precursor gas, combining a second carrier gas at a second flow rate and the first precursor gas to form a second precursor gas, measuring a concentration of the chemical precursor within the second precursor gas, and calculating a mass flow rate of the chemical precursor. In one example, a tantalum-containing film is deposited on a substrate during an atomic layer deposition process by heating an ampoule containing pentakis(dimethylamido) tantalum to a temperature within a range from about 60° C. to about 75° C., and forming a precursor gas by flowing a carrier gas through the ampoule.
摘要翻译：本发明的实施方案提供了一种用于监测和控制来自处理室中的安瓿的前体递送的方法。在一个实施方案中，该方法提供了使第一载气以第一流速流过包含化学前体的容器以形成第一前体气体，将第二载气与第一前体气体组合，形成第二载气前体气体，测量第二前体气体内的化学前体的浓度，以及计算化学前体的质量流量。在一个实例中，在原子层沉积工艺期间，通过将含有五（二甲基氨基）钽的安瓿加热至约60℃至约75℃的温度，将含钽的膜沉积在基板上，以及通过使载气流过安瓿来形成前体气体。

10. 发明申请

US20080008823A1 DEPOSITION PROCESSES FOR TUNGSTEN-CONTAINING BARRIER LAYERS 有权
标题翻译：用于含铁包层的沉积工艺
公开(公告)号：US20080008823A1
公开(公告)日：2008-01-10
申请号：US11844125
申请日：2007-08-23
申请人： LING CHEN , Mei Chang
发明人： LING CHEN , Mei Chang
IPC分类号： C23C16/00
CPC分类号： H01L21/76849 , C23C16/34 , C23C16/45525 , H01L21/28562 , Y10T29/49124 , Y10T29/49126 , Y10T29/49155
摘要： In one embodiment, a method for forming a barrier material on a substrate is provided which includes exposing a dielectric layer on the substrate to a plasma during a preclean process, wherein the dielectric layer contains a feature having sidewalls and a bottom surface, and depositing a tungsten-containing barrier material containing tungsten nitride on the sidewalls and the bottom surface of the feature during a cyclic layer deposition process. The method further provides depositing a metal-containing seed layer on the tungsten-containing barrier material and depositing a metal-containing layer over the metal-containing seed layer to fill the feature. In another embodiment, the method provides conducting the cyclic layer deposition process within a process chamber having an expanding channel centralized above a substrate support and having a bottom surface sized and shaped to substantially cover the substrate, and sequentially exposing the substrate to precursor gases flowing from the expanding channel during the cyclic layer deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成阻挡材料的方法，其包括在预清洗工艺期间将衬底上的电介质层暴露于等离子体，其中介电层包含具有侧壁和底表面的特征，在循环层沉积工艺期间在该特征的侧壁和底表面上含有氮化钨的含钨阻挡材料。该方法进一步提供在含钨屏障材料上沉积含金属种子层并在含金属种子层上沉积含金属层以填充该特征。在另一个实施方案中，该方法提供了在处理室内进行循环层沉积工艺，其具有集中在衬底支撑件上方的扩展通道，并具有大小和形状以基本上覆盖衬底的底表面，并且将衬底依次暴露于从在循环层沉积过程中的扩展通道。

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