会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 126. 发明授权
    • Sensing circuit for memories
    • 记忆感应电路
    • US07489574B2
    • 2009-02-10
    • US11763900
    • 2007-06-15
    • Chun-Hung LinYin-Chang Chen
    • Chun-Hung LinYin-Chang Chen
    • G11C7/02
    • G11C7/12G11C7/08G11C2207/005
    • A memory apparatus includes a plurality of memory units, a sensing circuit and a bias-generating circuit. The plurality of memory units respectively outputs a data current to the sensing circuit, while the sensing circuit further includes a plurality of first transistors, a plurality of second transistors and a plurality of sensing amplifiers. In order to speed up the access time of the memory units, the bias-generating circuit rapidly provides a bias signal to the sensing circuit to turn on the first transistors of the sensing circuit. In the present invention, the sensing circuit uses a common reference voltage to reduce the circuit utilization area of the memory apparatus.
    • 存储装置包括多个存储单元,感测电路和偏置发生电路。 多个存储单元分别将数据电流输出到感测电路,而感测电路还包括多个第一晶体管,多个第二晶体管和多个感测放大器。 为了加快存储单元的访问时间,偏置产生电路快速地向感测电路提供偏置信号以接通感测电路的第一晶体管。 在本发明中,感测电路使用公共参考电压来减小存储装置的电路利用面积。