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1. 发明申请

US20130167920A1 CONDUCTIVE SUBSTRATE AND FABRICATING METHOD THEREOF, AND SOLAR CELL 审中-公开
标题翻译：导电基板及其制造方法及太阳能电池
公开(公告)号：US20130167920A1
公开(公告)日：2013-07-04
申请号：US13567106
申请日：2012-08-06
申请人： Chia-Chiang Chang , Chin-Jyi Wu , Chun-Hsien Su , Dao-Yang Huang
发明人： Chia-Chiang Chang , Chin-Jyi Wu , Chun-Hsien Su , Dao-Yang Huang
IPC分类号： H01L31/0236 , C23C14/34 , B32B3/30 , H01L31/18
CPC分类号： H01L31/02366 , H01L31/02168 , H01L31/022483 , Y02E10/50 , Y10T428/24355
摘要： A fabricating method of a conductive substrate including the following steps is provided. A substrate is provided. A barrier layer having a first roughened surface is formed on the substrate by an atmospheric pressure plasma process, wherein the surface roughness (Ra) of the first roughened surface formed by the atmospheric pressure plasma process is between 10 nanometers (nm) and 100 nm. A first electrode layer is formed on the first roughened surface of the barrier layer by a vacuum sputter process, wherein a second roughened surface with the surface roughness (Ra) between 10 nm and 100 nm is formed on a surface of the first electrode layer. Furthermore, a photoelectric conversion layer is formed on the second roughened surface of the first electrode layer. A second electrode layer is formed on the photoelectric conversion layer. A solar cell and a conductive substrate are also provided.
摘要翻译：提供了包括以下步骤的导电基板的制造方法。提供基板。通过大气压等离子体处理，在基板上形成具有第一粗糙面的阻挡层，其中，由大气压等离子体工艺形成的第一粗糙面的表面粗糙度（Ra）在10nm（nm）〜100nm之间。通过真空溅射法在阻挡层的第一粗糙表面上形成第一电极层，其中在第一电极层的表面上形成表面粗糙度（Ra）在10nm和100nm之间的第二粗糙表面。此外，在第一电极层的第二粗糙化表面上形成光电转换层。在光电转换层上形成第二电极层。还提供太阳能电池和导电基板。

2. 发明授权

US08316796B2 Film coating system and isolating device thereof 有权
标题翻译：薄膜涂布系统及其隔离装置
公开(公告)号：US08316796B2
公开(公告)日：2012-11-27
申请号：US11954843
申请日：2007-12-12
申请人： Chi-Hung Liu , Chih-Ming Chen , Chun-Hsien Su , Chih-Wei Chen , Wen-Tung Hsu , Chun-Hung Lin
发明人： Chi-Hung Liu , Chih-Ming Chen , Chun-Hsien Su , Chih-Wei Chen , Wen-Tung Hsu , Chun-Hung Lin
IPC分类号： C23C16/00
CPC分类号： H01J37/32568 , H01J37/3244 , H01J37/32825 , H01J2237/20214
摘要： A film coating system for coating an object includes a working station and an isolating device. The object is disposed on the working station, and the isolating device is utilized to isolate the object. The isolating device includes a body generating a first power, a first working fluid, a second working fluid, a first guiding portion and a second guiding portion. The first guiding portion guides the first working fluid to pass through the body, thereby forming a first working region to coat the object thereon. The second guiding portion guides the second working fluid excited by the first power of the body to pass through the body, thereby forming a second working region to separate the first working region from the object.
摘要翻译：用于涂覆物体的涂膜系统包括加工台和隔离装置。物体设置在工作站上，隔离装置用于隔离物体。隔离装置包括产生第一功率的主体，第一工作流体，第二工作流体，第一引导部分和第二引导部分。第一引导部引导第一工作流体穿过主体，从而形成第一工作区域以在其上涂覆物体。第二引导部分引导由身体的第一功率激发的第二工作流体穿过主体，从而形成第二工作区域以将第一工作区域与物体分开。

3. 发明授权

US08277616B2 Surface treating device and surface treating method 有权
标题翻译：表面处理装置及表面处理方法
公开(公告)号：US08277616B2
公开(公告)日：2012-10-02
申请号：US11892853
申请日：2007-08-28
申请人： Chi-Hung Liu , Chun-Hung Lin , Chun-Hsien Su , Wen-Tung Hsu
发明人： Chi-Hung Liu , Chun-Hung Lin , Chun-Hsien Su , Wen-Tung Hsu
IPC分类号： B01J19/08
CPC分类号： A61B18/042 , A61C5/00 , A61C19/066
摘要： A surface treating method for treating a tooth surface and a surface treating device thereof are provided. First, a working gas is filled into a tube. Next, a voltage is provided to the working gas for exciting the working gas into plasma. After that, the plasma is discharged through an opening of the tube for contacting the tooth surface.
摘要翻译：提供了一种用于处理牙齿表面的表面处理方法及其表面处理装置。首先，将工作气体填充到管中。接下来，向工作气体提供用于将工作气体激发成等离子体的电压。之后，等离子体通过用于与齿面接触的管的开口排出。

4. 发明授权

US07746117B2 Complementary energy path adiabatic logic 有权
标题翻译：互补能量路径绝热逻辑
公开(公告)号：US07746117B2
公开(公告)日：2010-06-29
申请号：US12236571
申请日：2008-09-24
申请人： Ci-Tong Hong , Cihun-Siyong Gong , Chun-Hsien Su , Muh-Tian Shiue , Kai-Wen Yao
发明人： Ci-Tong Hong , Cihun-Siyong Gong , Chun-Hsien Su , Muh-Tian Shiue , Kai-Wen Yao
IPC分类号： H03K19/096
CPC分类号： H03K19/0019 , H03K19/096 , H03K19/0963
摘要： A complementary energy path adiabatic logic (CEPAL) includes an evaluation network and a power clock network. The evaluation network is a logic circuit composed of P-type MOS transistors and N-type MOS transistors. The power clock network includes a P-type and N-type MOS transistors and additional P-type and N-type MOS transistors, with each of the transistors involved in the power clock network acting as an active diode.
摘要翻译：互补能量路径绝热逻辑（CEPAL）包括评估网络和电源时钟网络。评估网络是由P型MOS晶体管和N型MOS晶体管组成的逻辑电路。功率时钟网络包括P型和N型MOS晶体管和附加的P型和N型MOS晶体管，其中涉及功率时钟网络的每个晶体管用作有源二极管。

5. 发明申请

US20100073029A1 Complementary Energy Path Adiabatic Logic 有权
标题翻译：互补能量路径绝热逻辑
公开(公告)号：US20100073029A1
公开(公告)日：2010-03-25
申请号：US12236571
申请日：2008-09-24
申请人： Ci-Tong Hong , Cihun-Siyong Gong , Chun-Hsien Su , Muh-Tian Shiue , Kai-Wen Yao
发明人： Ci-Tong Hong , Cihun-Siyong Gong , Chun-Hsien Su , Muh-Tian Shiue , Kai-Wen Yao
IPC分类号： H03K19/0948 , H03K19/096
CPC分类号： H03K19/0019 , H03K19/096 , H03K19/0963
摘要： A complementary energy path adiabatic logic (CEPAL) includes an evaluation network and a power clock network. The evaluation network is a logic circuit composed of P-type MOS transistors and N-type MOS transistors. The power clock network includes a P-type and N-type MOS transistors and additional P-type and N-type MOS transistors, with each of the transistors involved in the power clock network acting as an active diode.
摘要翻译：互补能量路径绝热逻辑（CEPAL）包括评估网络和电源时钟网络。评估网络是由P型MOS晶体管和N型MOS晶体管组成的逻辑电路。功率时钟网络包括P型和N型MOS晶体管和附加的P型和N型MOS晶体管，其中涉及功率时钟网络的每个晶体管用作有源二极管。

6. 发明授权

US08416966B2 Method of automatic gain modulation and apparatus implementing the same 有权
标题翻译：自动增益调制方法及其实现方法
公开(公告)号：US08416966B2
公开(公告)日：2013-04-09
申请号：US12899830
申请日：2010-10-07
申请人： An Pang Li , Chih-Lung Chen , Chun Hsien Su
发明人： An Pang Li , Chih-Lung Chen , Chun Hsien Su
IPC分类号： H03G3/00
CPC分类号： H03G3/3089 , H03G3/3005
摘要： Provided is method for automatic audio gain modulation and a related apparatus. In order to prevent the unstable signals as continuously increasing or decreasing the gain when the signals hover around an upper threshold, it's featured that the method is to predict the signal intensity as pre-adding a predict gain in a hold time before outputting signals. By determining whether the prediction exceeds a predetermined threshold or not, the suitable and adjustable gains can be obtained without exceeding the predetermined threshold. In the automatic gain control mechanism, it's to decrease the gain gradually as automatically entering an attack time, or to increase the gain gradually as performing a conventional auto-gain control procedure including entering a release time. The claimed method can modulate the gain automatically by predicting the gain, and confine the signals under a threshold. In addition to avoid sawtooth phenomena, the method can stabilize the signals.
摘要翻译：提供了一种用于自动音频增益调制的方法和相关装置。为了防止不稳定信号在信号悬停在上限阈值附近时持续增加或减小增益，其特征在于该方法是在输出信号之前将信号强度预测为在预设增益保持时间内预加增益。通过确定预测是否超过预定阈值，可以在不超过预定阈值的情况下获得适当和可调节的增益。在自动增益控制机构中，随着自动进入攻击时间逐渐减小增益，或者随着执行常规的自动增益控制程序（包括进入释放时间）而逐渐增加增益。所要求的方法可以通过预测增益自动调制增益，并将信号限制在阈值以下。除了避免锯齿现象外，该方法可以稳定信号。

7. 发明申请

US20090004620A1 Surface treating device and surface treating method 有权
标题翻译：表面处理装置及表面处理方法
公开(公告)号：US20090004620A1
公开(公告)日：2009-01-01
申请号：US11892853
申请日：2007-08-28
申请人： Chi-Hung LIU , Chun-Hung LIN , Chun-Hsien SU , Wen-Tung HSU
发明人： Chi-Hung LIU , Chun-Hung LIN , Chun-Hsien SU , Wen-Tung HSU
IPC分类号： A61C17/00
CPC分类号： A61B18/042 , A61C5/00 , A61C19/066
摘要： A surface treating method for treating a tooth surface and a surface treating device thereof are provided. First, a working gas is filled into a tube. Next, a voltage is provided to the working gas for exciting the working gas into plasma. After that, the plasma is discharged through an opening of the tube for contacting the tooth surface.
摘要翻译：提供了一种用于处理牙齿表面的表面处理方法及其表面处理装置。首先，将工作气体填充到管中。接下来，向工作气体提供用于将工作气体激发成等离子体的电压。之后，等离子体通过用于与齿面接触的管的开口排出。

8. 发明申请

US20080066679A1 PROCESSING SYSTEM AND PLASMA GENERATION DEVICE 审中-公开
标题翻译：处理系统和等离子体生成装置
公开(公告)号：US20080066679A1
公开(公告)日：2008-03-20
申请号：US11564826
申请日：2006-11-29
申请人： Chi-Hung Liu , Wen-Tzong Hsieh , Chen-Der Tsai , Chun-Hsien Su , Chih Wei Chen , Chun-Hung Lin
发明人： Chi-Hung Liu , Wen-Tzong Hsieh , Chen-Der Tsai , Chun-Hsien Su , Chih Wei Chen , Chun-Hung Lin
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32366 , C23C16/513 , C23C16/54 , H01J37/32357 , H01J2237/032 , H05H1/2406 , H05H2001/2462
摘要： A processing system is used for processing an object by a first fluid. The processing system includes a base and a plasma generation device. The base supports the object and the plasma generation device ionizes the first fluid. The plasma generation device includes at least one guiding element comprising a path guiding the first fluid to sequentially flow through a first position and a second position and at least one electrode element including a first electrode corresponding to the first position and a second electrode corresponding to the second position. The first and second electrodes energize the first fluid located between the first and second electrodes to form a second fluid, to thereby utilize the second fluid to perform surfacing, activating, cleaning, photoresist ashing or etching process on the object supported by the base.
摘要翻译：处理系统用于通过第一流体处理物体。处理系统包括基座和等离子体产生装置。基座支撑物体，等离子体发生装置离子化第一流体。等离子体产生装置包括至少一个引导元件，该引导元件包括引导第一流体顺序地流过第一位置和第二位置的路径，以及包括对应于第一位置的第一电极和对应于第一位置的第二电极的至少一个电极元件第二名第一和第二电极激励位于第一和第二电极之间的第一流体以形成第二流体，从而利用第二流体对由基座支撑的物体进行表面，活化，清洁，光致抗蚀剂灰化或蚀刻过程。

9. 发明授权

US5844444A Wide dynamic input range transconductor-based amplifier circuit for speech signal processing 失效
标题翻译：宽动态输入范围基于跨导体的放大电路，用于语音信号处理
公开(公告)号：US5844444A
公开(公告)日：1998-12-01
申请号：US800712
申请日：1997-02-14
申请人： Chin-san Wu , Chun-hsien Su
发明人： Chin-san Wu , Chun-hsien Su
IPC分类号： H03G3/20 , H03G3/30
CPC分类号： H03G3/301
摘要： A two-opamp gain stage wide dynamic range automatic level control circuit (WDR ALC) for implementation in a speech applications is disclosed. The first gain stage is formed by an inverting opamp with a transconductor device in the feedback loop. The first gain stage produces an output voltage which is coupled to a second gain stage via an ac coupling capacitor. The second gain stage is formed by an inverting opamp which produces the output voltages for the (WDR ALC). A fraction of the first stage's output voltage is fed back to the transconductor device. The transconductor device acts as a voltage controlled resistor that is effectively parallel with the feedback resistor of the first stage opamp. The output voltage of the second stage is fed back to peak detector adapted for speech electronic circuitry applications. The output of the peak detector is compared with a preset peak voltage by a converter which generates the control voltage for the transconductor device. Upon being activated, the transconductor device sinks a fraction of input current that is proportional to the output voltage of the first stage which effectively reduces the gain of the first stage. The gain reduction of the first stage suppresses the output voltage of the second stage to control the over gain of the (WDR ALC). The object of having an automatic level control circuit (ALC) operational over a broad range of input voltages is accomplished by virtue of having the input voltage applied directly to the first gain stage which is not affected by the transconductor device. The relaxation of the dependency of performance of the ALC on a transconductor device results in simplifying the design of the transconductor device.
摘要翻译：公开了一种用于语音应用中实现的双运放增益级宽动态范围自动电平控制电路（WDR ALC）。第一增益级由在反馈回路中具有跨导器件的反相运算放大器形成。第一增益级产生经由交流耦合电容耦合到第二增益级的输出电压。第二增益级由产生（WDR ALC）的输出电压的反相运算放大器形成。第一级输出电压的一小部分被反馈到跨导器件。跨导器件用作与第一级运算放大器的反馈电阻有效并联的压控电阻器。将第二级的输出电压反馈到适用于语音电子电路应用的峰值检测器。通过转换器将峰值检测器的输出与预设的峰值电压进行比较，该转换器产生跨导器件的控制电压。在被激活时，跨导器件吸收与第一级的输出电压成比例的一部分输入电流，其有效地降低了第一级的增益。第一级的增益减小抑制第二级的输出电压来控制（WDR ALC）的过度增益。具有在宽范围的输入电压下工作的自动电平控制电路（ALC）的目的是通过使输入电压直接施加到不受跨导体器件影响的第一增益级来实现。 ALC对跨导器件的性能的依赖性的放宽导致了跨导体器件的设计的简化。

10. 发明授权

US08092750B2 Plasma system 有权
标题翻译：等离子体系
公开(公告)号：US08092750B2
公开(公告)日：2012-01-10
申请号：US12388552
申请日：2009-02-19
申请人： Chi-Hung Liu , Chen-Der Tsai , Chun-Hsien Su , Wen-Tung Hsu , Jen-Hui Tsai , Chun Huang
发明人： Chi-Hung Liu , Chen-Der Tsai , Chun-Hsien Su , Wen-Tung Hsu , Jen-Hui Tsai , Chun Huang
IPC分类号： H05H1/24
CPC分类号： H05H1/2406 , H05H2001/2456
摘要： A plasma system for generating a plasma is generated. The plasma system includes a tube, a positive electrode and a negative electrode. The tube has a plasma jet opening, a first end surface and a second end surface. The plasma jet opening penetrates the wall of the tube. The plasma passes through the plasma jet opening and is emitted to the outside of the tube. The positive electrode has a side surface facing and adjacent to the tube. The negative electrode is separated from the positive electrode by a first predetermined distance. The negative electrode has a negative electrode side surface facing and adjacent to the tube. The first positive electrode and the first negative electrode are disposed between the first end surface and the second end surface, and a portion of the plasma jet opening is disposed between the positive electrode and the negative electrode.
摘要翻译：产生用于产生等离子体的等离子体系统。等离子体系包括管，正极和负极。管具有等离子体射流开口，第一端面和第二端面。等离子体射流开口穿过管的壁。等离子体通过等离子体射流开口并被发射到管的外部。正极具有面向和邻近管的侧表面。负极与正极分离第一预定距离。负极具有面对并与管相邻的负极侧面。第一正极和第一负极设置在第一端面和第二端面之间，等离子体喷射口的一部分配置在正极和负极之间。

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