专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07787977B2 Methods and systems for forming semiconductor structures 有权
标题翻译：用于形成半导体结构的方法和系统
公开(公告)号：US07787977B2
公开(公告)日：2010-08-31
申请号：US11563947
申请日：2006-11-28
申请人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
发明人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： A method for processing substrates to manufacture semiconductor structures thereon includes analyzing at least one first processing parameter of a first apparatus for processing a substrate, thereby yielding at least one first throughput rate of the first apparatus. At least one second processing parameter of a second apparatus is analyzed for processing the substrate, thereby yielding at least one second throughput rate of the second apparatus. The first throughput rate and the second throughput rate are compared, thereby yielding at least one comparison result for processing the substrate.
摘要翻译：一种用于处理衬底以在其上制造半导体结构的方法，包括分析用于处理衬底的第一装置的至少一个第一处理参数，从而产生第一装置的至少一个第一吞吐率。分析第二装置的至少一个第二处理参数以处理基板，从而产生第二装置的至少一个第二吞吐率。比较第一吞吐率和第二吞吐率，从而产生用于处理基板的至少一个比较结果。

2. 发明申请

US20080125902A1 METHODS AND SYSTEMS FOR FORMING SEMICONDUCTOR STRUCTURES 有权
标题翻译：形成半导体结构的方法和系统
公开(公告)号：US20080125902A1
公开(公告)日：2008-05-29
申请号：US11563947
申请日：2006-11-28
申请人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
发明人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： A method for processing substrates to manufacture semiconductor structures thereon includes analyzing at least one first processing parameter of a first apparatus for processing a substrate, thereby yielding at least one first throughput rate of the first apparatus. At least one second processing parameter of a second apparatus is analyzed for processing the substrate, thereby yielding at least one second throughput rate of the second apparatus. The first throughput rate and the second throughput rate are compared, thereby yielding at least one comparison result for processing the substrate.
摘要翻译：一种用于处理衬底以在其上制造半导体结构的方法，包括分析用于处理衬底的第一装置的至少一个第一处理参数，从而产生第一装置的至少一个第一吞吐率。分析第二装置的至少一个第二处理参数以处理基板，从而产生第二装置的至少一个第二吞吐率。比较第一吞吐率和第二吞吐率，从而产生用于处理基板的至少一个比较结果。

3. 发明授权

US07571021B2 Method and system for improving critical dimension uniformity 有权
标题翻译：改善临界尺寸均匀性的方法和系统
公开(公告)号：US07571021B2
公开(公告)日：2009-08-04
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00 , G05B13/02
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

4. 发明授权

US08068208B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08068208B2
公开(公告)日：2011-11-29
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/68 , G03B27/42 , G03B27/58 , G03B27/60 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

5. 发明申请

US20080129969A1 System and Method For Improving Immersion Scanner Overlay Performance 有权
标题翻译：提高浸入式扫描仪覆盖性能的系统和方法
公开(公告)号：US20080129969A1
公开(公告)日：2008-06-05
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没式扫描仪的覆盖性能的方法，其包括设置在其中的水通道中的透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供一个水箱至少一个晶片台输入和晶片台输出; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

6. 发明授权

US08199314B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08199314B2
公开(公告)日：2012-06-12
申请号：US13288133
申请日：2011-11-03
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/58 , G03B27/60 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

7. 发明申请

US20080195243A1 Method and System for Improving Critical Dimension Uniformity 有权
标题翻译：改进关键尺寸均匀性的方法与系统
公开(公告)号：US20080195243A1
公开(公告)日：2008-08-14
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

8. 发明申请

US20080198351A1 Lithography Scanner Throughput 有权
标题翻译：光刻扫描仪吞吐量
公开(公告)号：US20080198351A1
公开(公告)日：2008-08-21
申请号：US11677320
申请日：2007-02-21
申请人： Chien-Hsun Lin , An-Kao Yang , Jui-Chung Peng , Yao-Wen Guo
发明人： Chien-Hsun Lin , An-Kao Yang , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G03B27/42
CPC分类号： G03F7/70358 , G03F7/70425 , G03F7/70466
摘要： A method for use in the manufacture of a microelectronic apparatus, the method comprising exposing a dummy field on a substrate by utilizing a lithographic scanner at a first speed, and exposing a production field on the substrate by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed. In a related embodiment, a method for use in the manufacture a microelectronic apparatus comprises exposing a non-critical layer of the apparatus by utilizing a lithographic scanner at a first speed, and exposing a critical layer of the apparatus by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed.
摘要翻译：一种用于制造微电子装置的方法，所述方法包括以第一速度利用光刻扫描仪曝光衬底上的虚拟场，并以第二速度利用光刻扫描器暴露衬底上的生产场，其中第一速度基本上大于第二速度。在相关实施例中，一种用于制造微电子设备的方法包括：以第一速度利用光刻扫描仪曝光设备的非临界层，并且通过利用光刻扫描仪在一个第二速度，其中第一速度基本上大于第二速度。

9. 发明授权

US09529275B2 Lithography scanner throughput 有权
标题翻译：光刻扫描仪吞吐量
公开(公告)号：US09529275B2
公开(公告)日：2016-12-27
申请号：US11677320
申请日：2007-02-21
申请人： Chien-Hsun Lin , An-Kao Yang , Jui-Chung Peng , Yao-Wen Guo
发明人： Chien-Hsun Lin , An-Kao Yang , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G03B27/58 , G03F7/20
CPC分类号： G03F7/70358 , G03F7/70425 , G03F7/70466
摘要： A method for use in the manufacture of a microelectronic apparatus, the method comprising exposing a dummy field on a substrate by utilizing a lithographic scanner at a first speed, and exposing a production field on the substrate by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed. In a related embodiment, a method for use in the manufacture a microelectronic apparatus comprises exposing a non-critical layer of the apparatus by utilizing a lithographic scanner at a first speed, and exposing a critical layer of the apparatus by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed.
摘要翻译：一种用于制造微电子装置的方法，所述方法包括以第一速度利用光刻扫描仪曝光衬底上的虚拟场，并以第二速度利用光刻扫描器暴露衬底上的生产场，其中第一速度基本上大于第二速度。在相关实施例中，一种用于制造微电子设备的方法包括：以第一速度利用光刻扫描仪曝光设备的非临界层，并且通过利用光刻扫描仪在一个第二速度，其中第一速度基本上大于第二速度。

10. 发明申请

US20050023463A1 CD sem automatic focus methodology and apparatus for constant electron beam dosage control 有权
标题翻译： CD半自动聚焦方法和恒电子束剂量控制装置
公开(公告)号：US20050023463A1
公开(公告)日：2005-02-03
申请号：US10628914
申请日：2003-07-29
申请人： Chih-Ming Ke , Chien-Hsun Lin , Yao-Ching Ku
发明人： Chih-Ming Ke , Chien-Hsun Lin , Yao-Ching Ku
IPC分类号： G01N23/225
CPC分类号： G01N23/2251
摘要： Reducing photoresist shrinkage by plasma treatment is disclosed. A semiconductor wafer having one or more photoresist layers is plasma treated, such as plasma curing, plasma etching, and/or high-density plasma etching the wafer. After plasma treating, one or more critical dimensions on the photoresist layers is measured using an electron beam, such as by using a scanning electron microscope (SEM). The plasma treating of the wafer prior to measuring the critical dimensions using the electron beam decreases shrinkage of the photoresist layer when using the electron beam.
摘要翻译：公开了通过等离子体处理降低光刻胶的收缩率。具有一个或多个光致抗蚀剂层的半导体晶片被等离子体处理，例如等离子体固化，等离子体蚀刻和/或高密度等离子体蚀刻晶片。在等离子体处理之后，使用电子束，例如通过使用扫描电子显微镜（SEM）测量光致抗蚀剂层上的一个或多个临界尺寸。在使用电子束测量临界尺寸之前对晶片的等离子体处理降低了当使用电子束时光致抗蚀剂层的收缩。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式