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1. 发明申请

US20080125902A1 METHODS AND SYSTEMS FOR FORMING SEMICONDUCTOR STRUCTURES 有权
标题翻译：形成半导体结构的方法和系统
公开(公告)号：US20080125902A1
公开(公告)日：2008-05-29
申请号：US11563947
申请日：2006-11-28
申请人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
发明人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： A method for processing substrates to manufacture semiconductor structures thereon includes analyzing at least one first processing parameter of a first apparatus for processing a substrate, thereby yielding at least one first throughput rate of the first apparatus. At least one second processing parameter of a second apparatus is analyzed for processing the substrate, thereby yielding at least one second throughput rate of the second apparatus. The first throughput rate and the second throughput rate are compared, thereby yielding at least one comparison result for processing the substrate.
摘要翻译：一种用于处理衬底以在其上制造半导体结构的方法，包括分析用于处理衬底的第一装置的至少一个第一处理参数，从而产生第一装置的至少一个第一吞吐率。分析第二装置的至少一个第二处理参数以处理基板，从而产生第二装置的至少一个第二吞吐率。比较第一吞吐率和第二吞吐率，从而产生用于处理基板的至少一个比较结果。

2. 发明授权

US07787977B2 Methods and systems for forming semiconductor structures 有权
标题翻译：用于形成半导体结构的方法和系统
公开(公告)号：US07787977B2
公开(公告)日：2010-08-31
申请号：US11563947
申请日：2006-11-28
申请人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
发明人： Chien-Hsun Lin , An-Kuo Yang , Yao-Wen Guo , Chun-Hung Lin
IPC分类号： G06F19/00
CPC分类号： H01L22/20
摘要： A method for processing substrates to manufacture semiconductor structures thereon includes analyzing at least one first processing parameter of a first apparatus for processing a substrate, thereby yielding at least one first throughput rate of the first apparatus. At least one second processing parameter of a second apparatus is analyzed for processing the substrate, thereby yielding at least one second throughput rate of the second apparatus. The first throughput rate and the second throughput rate are compared, thereby yielding at least one comparison result for processing the substrate.
摘要翻译：一种用于处理衬底以在其上制造半导体结构的方法，包括分析用于处理衬底的第一装置的至少一个第一处理参数，从而产生第一装置的至少一个第一吞吐率。分析第二装置的至少一个第二处理参数以处理基板，从而产生第二装置的至少一个第二吞吐率。比较第一吞吐率和第二吞吐率，从而产生用于处理基板的至少一个比较结果。

3. 发明授权

US07571021B2 Method and system for improving critical dimension uniformity 有权
标题翻译：改善临界尺寸均匀性的方法和系统
公开(公告)号：US07571021B2
公开(公告)日：2009-08-04
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00 , G05B13/02
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

4. 发明申请

US20080129969A1 System and Method For Improving Immersion Scanner Overlay Performance 有权
标题翻译：提高浸入式扫描仪覆盖性能的系统和方法
公开(公告)号：US20080129969A1
公开(公告)日：2008-06-05
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没式扫描仪的覆盖性能的方法，其包括设置在其中的水通道中的透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供一个水箱至少一个晶片台输入和晶片台输出; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

5. 发明授权

US08068208B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08068208B2
公开(公告)日：2011-11-29
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/68 , G03B27/42 , G03B27/58 , G03B27/60 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

6. 发明授权

US08199314B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08199314B2
公开(公告)日：2012-06-12
申请号：US13288133
申请日：2011-11-03
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/58 , G03B27/60 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

7. 发明申请

US20080195243A1 Method and System for Improving Critical Dimension Uniformity 有权
标题翻译：改进关键尺寸均匀性的方法与系统
公开(公告)号：US20080195243A1
公开(公告)日：2008-08-14
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

8. 发明授权

US08927314B2 Method of manufacturing solar cell with two exposed surfaces of arc layer disposed at different levels 有权
标题翻译：制造太阳能电池的方法，其具有设置在不同水平的弧形层的两个暴露表面
公开(公告)号：US08927314B2
公开(公告)日：2015-01-06
申请号：US13549814
申请日：2012-07-16
申请人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
发明人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/0216
CPC分类号： H01L31/022433 , H01L31/02168 , Y02E10/50 , Y02E10/52
摘要： A method of manufacturing a solar cell includes the steps of: providing a substrate having a front side, a back side and a doped region; forming a conductor layer on the front side; firing the conductor layer at a temperature such that the conductor layer is formed with a first portion embedded into the doped region and a second portion other than the first portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the conductor layer so that the second portion of the conductor layer is disposed in the ARC layer; and removing the ARC layer on the conductor layer so that the conductor layer has an exposed surface exposed out of the ARC layer, wherein the exposed surface of the conductor layer is substantially flush with a first exposed surface of the ARC layer.
摘要翻译：一种制造太阳能电池的方法包括以下步骤：提供具有正面，背面和掺杂区域的基板; 在前侧形成导体层; 在使得导体层形成有嵌入掺杂区域的第一部分和除了第一部分之外的第二部分的温度下烧制导体层; 在前侧和第二部分形成防反射涂层（ARC）层，其中ARC层覆盖导体层，使得导体层的第二部分设置在ARC层中; 以及去除所述导体层上的所述ARC层，使得所述导体层具有暴露在所述ARC层外部的暴露表面，其中所述导体层的所述暴露表面基本上与所述ARC层的第一暴露表面齐平。

9. 发明授权

US08728851B2 Method of manufacturing solar cell with upper and lower conductor layers stacked together 有权
标题翻译：具有层叠在一起的上下导体层的太阳能电池的制造方法
公开(公告)号：US08728851B2
公开(公告)日：2014-05-20
申请号：US13549877
申请日：2012-07-16
申请人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
发明人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
IPC分类号： H01L31/18
CPC分类号： H01L31/022433 , H01L31/02168 , Y02E10/50 , Y02E10/52
摘要： A method of manufacturing a solar cell comprises the steps of: forming a lower conductor layer on a front side of a substrate; firing the lower conductor layer at a first temperature to form a first portion embedded into a doped region of the substrate and a second portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the lower conductor layer such that the second portion is disposed in the ARC layer; forming an upper conductor layer, corresponding to the lower conductor layer and electrically connected to the lower conductor layer, on the ARC layer; and firing the upper conductor layer at a second temperature to form a first portion embedded into the ARC layer and a second portion, which is exposed out of the ARC layer.
摘要翻译：一种制造太阳能电池的方法包括以下步骤：在基板的正面形成下导体层; 在第一温度下焙烧下导体层以形成嵌入衬底的掺杂区域中的第一部分和第二部分; 在前侧和第二部分形成防反射涂层（ARC）层，其中ARC层覆盖下导体层，使得第二部分设置在ARC层中; 在ARC层上形成对应于下导体层并电连接到下导体层的上导体层; 以及在第二温度下烧制所述上导体层以形成嵌入到所述ARC层中的第一部分和暴露在所述ARC层外的第二部分。

10. 发明授权

US08603723B2 Image transfer process 有权
标题翻译：图像传输过程
公开(公告)号：US08603723B2
公开(公告)日：2013-12-10
申请号：US13014285
申请日：2011-01-26
申请人： Hsi-Wen Chang , Wei-Jen Lai , Pi-Ju Chiang , Chun-Hung Lin , Jung Ya Hsieh
发明人： Hsi-Wen Chang , Wei-Jen Lai , Pi-Ju Chiang , Chun-Hung Lin , Jung Ya Hsieh
IPC分类号： G03C5/16 , G03F1/00 , G02F1/03
CPC分类号： G03C11/12 , D06P1/0012 , D06P5/2005
摘要： The present invention relates to an image transfer process. The process includes the steps of: a) providing an image carrying device including at least one photoluminescent surface; b) displaying a luminous image on a display surface of a light-emitting medium; and c) positioning the display surface of the light-emitting medium that is displaying the luminous image at a distance from the at least one photoluminescent surface of the image carrying device shorter than a predetermined effective distance, for a predetermined period of time.
摘要翻译：本发明涉及图像转印处理。该方法包括以下步骤：a）提供包括至少一个光致发光表面的图像承载装置; b）在发光介质的显示表面上显示发光图像; 以及c）将显示所述发光图像的所述发光介质的显示表面定位在比所述图像承载装置的所述至少一个光致发光表面短一预定有效距离的预定时间段。

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