专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明授权

US06720204B2 Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding 有权
标题翻译：在Cu / Cu或Cu /金属接合期间使用氢等离子体预清洁铜表面的方法
公开(公告)号：US06720204B2
公开(公告)日：2004-04-13
申请号：US10120836
申请日：2002-04-11
申请人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
发明人： John Leonard Sudijono , Yakub Aliyu , Mei Sheng Zhou , Simon Chooi , Subhash Gupta , Sudipto Ranendra Roy , Paul Kwok Keung Ho , Yi Xu
IPC分类号： H01L2144
CPC分类号： H01L24/05 , C23G5/00 , H01L21/02046 , H01L21/32136 , H01L23/4824 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05118 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05556 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4813 , H01L2224/4846 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/49111 , H01L2224/85013 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/05042 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
摘要： A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.
摘要翻译：一种将金属丝焊接到金属焊盘上的方法，包括以下步骤。提供一种在室内具有暴露的金属接合焊盘的半导体管芯结构。接合垫具有上表面。在等离子体源室内产生氢等离子体。用氢 - 等离子体对金属接合垫进行预清洁和钝化以去除在金属焊盘上表面上形成的任何金属氧化物。然后将线接合到钝化金属接合焊盘。

92. 发明申请

US20040020898A1 Contaminant removal by laser-accelerated fluid 失效
标题翻译：通过激光加速流体去除污染物
公开(公告)号：US20040020898A1
公开(公告)日：2004-02-05
申请号：US10209506
申请日：2002-07-30
申请人： Applied Materials Israel, Inc.
发明人： Yoram Uziel
IPC分类号： C23F001/00 , B44C001/22 , C03C015/00 , C03C025/68
CPC分类号： H01L21/02046 , B08B7/0035 , B08B7/0042 , B23K26/146 , H01L21/67051
摘要： A method for removing a particle from a substrate includes forming a layer of a fluid on a surface of an optical element and positioning the optical element in proximity to a location of the particle on the substrate. A pulse of electromagnetic radiation is directed to impinge on the surface of the optical element so as to induce explosive evaporation of the fluid thereon, whereby a pressure wave is emitted toward the location of the particle.
摘要翻译：从基板去除颗粒的方法包括在光学元件的表面上形成流体层，并将光学元件定位在基板上的颗粒位置附近。电磁辐射脉冲被引向冲击在光学元件的表面上，以便在其上引起流体的爆炸性蒸发，从而向颗粒的位置发射压力波。

93. 发明授权

US06677247B2 Method of increasing the etch selectivity of a contact sidewall to a preclean etchant 失效
标题翻译：将接触侧壁的蚀刻选择性增加到预清洗蚀刻剂的方法
公开(公告)号：US06677247B2
公开(公告)日：2004-01-13
申请号：US10041550
申请日：2002-01-07
申请人： Zheng Yuan , Steve Ghanayem , Randhir P. S. Thakur
发明人： Zheng Yuan , Steve Ghanayem , Randhir P. S. Thakur
IPC分类号： H01L2100
CPC分类号： H01L21/76814 , C03C15/00 , H01L21/02043 , H01L21/02046 , H01L21/02063 , H01L21/31116 , H01L21/76826 , H01L21/76831
摘要： A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin silicon nitride layer on an outer surface of the contact hole. The silicon nitride layer reduces overetching that may otherwise occur when oxidation build-up is removed from the silicon interface within the contact hole by a preclean process. After the preclean process, the contact hole is then filled with one or more conductive materials. In various embodiments the silicon nitride layer is formed by exposing the contact hole to a nitrogen plasma, depositing the layer by a chemical vapor deposition process and depositing the layer by an atomic layer deposition process. In other embodiments, the method is applicable to the formation of vias through intermetal dielectric layers.
摘要翻译：一种在第一金属化层和硅衬底之间的集成电路中形成接触的方法。在一个实施例中，该方法包括在硅衬底上形成前金属介电层，蚀刻通过前金属介电层的接触孔，然后在接触孔的外表面上形成薄的氮化硅层。氮化硅层减少过蚀刻，否则当通过预清洗工艺从接触孔中的硅界面除去氧化积聚时，可能会发生过蚀刻。在预清洗工艺之后，接触孔然后用一种或多种导电材料填充。在各种实施例中，通过将接触孔暴露于氮等离子体，通过化学气相沉积工艺沉积该层并通过原子层沉积工艺沉积该层来形成氮化硅层。在其它实施例中，该方法适用于通过金属间电介质层形成通孔。

94. 发明申请

US20030236003A1 Method of forming barrier layer of semiconductor device 失效
标题翻译：形成半导体器件阻挡层的方法
公开(公告)号：US20030236003A1
公开(公告)日：2003-12-25
申请号：US10175812
申请日：2002-06-21
发明人： Kyeongmo Koo , Jaihyung Won , Hyeonill Um , Junhyuk Jung , Sangwook Park
IPC分类号： H01L021/425 , H01L021/44 , H01L021/26 , H01L021/324 , H01L021/42 , H01L021/477
CPC分类号： H01L21/76843 , H01L21/02046 , H01L21/28518 , H01L21/3003 , H01L21/76814 , H01L21/76856 , H01L21/76862 , Y10S438/906
摘要： A method of forming a barrier layer of a semiconductor device features a plurality of controlled steps for reducing contact resistance and microvoids in conductive contact pads of the semiconductor device through the use of a hydrogen-based plasma cleaning and deposition process. An alternate embodiment additionally provides a method for reactively removing chemical contaminants in the interfacial surfaces of the layers comprising the conductive contact pads.
摘要翻译：形成半导体器件的阻挡层的方法具有多个受控步骤，用于通过使用基于氢的等离子体清洗和沉积工艺来减小半导体器件的导电接触焊盘中的接触电阻和微孔。替代实施例另外提供了一种用于反应性地去除包括导电接触垫的层的界面中的化学污染物的方法。

95. 发明申请

US20030200985A1 Method and apparatus for removal of surface contaminants from substrates in vacuum applications 失效
公开(公告)号：US20030200985A1
公开(公告)日：2003-10-30
申请号：US10424197
申请日：2003-04-25
申请人： ETEC SYSTEMS, INC.
发明人： Bart Scholte van Mast
IPC分类号： C25F001/00 , C23F001/00 , H01L021/302 , B44C001/22
CPC分类号： H01L21/02046 , B08B7/0035 , H01L21/67028
摘要： A method and apparatus for removal of volatile contaminants from substrate surfaces before the substrate enters a process chamber. Substrate cleaning is achieved by irradiating the substrate with a low-energy electron beam. The interaction of the electrons in the beam with the contaminants present on the surface of the substrate causes evaporation of low vapor pressure species which can be deposited on the surface. A cryoshield pumps the evaporated species. After evaporation and pumping, the substrate passes through a glow discharge chamber wherein the negative surface charge created by the electron beam is neutralized using positive ions. The inventive apparatus can be configured so that no separate vacuum chamber is needed to prepare the substrate.

96. 发明申请

US20030186515A1 Methods for simultaneously depositing layers over pluralities of discrete semiconductor substrate 有权
标题翻译：同时在多个分立半导体衬底上沉积层的方法
公开(公告)号：US20030186515A1
公开(公告)日：2003-10-02
申请号：US10099216
申请日：2002-03-13
发明人： Trung Tri Dean , Lyle D. Breiner , Er-Xuan Ping , Lingyi A. Zheng
IPC分类号： C30B001/00 , H01L021/20 , H01L021/4763
CPC分类号： H01L21/0228 , C23C16/0236 , C23C16/0245 , C23C16/45546 , C23C16/54 , C30B25/02 , H01L21/02046 , H01L21/0214 , H01L21/02142 , H01L21/02164 , H01L21/0217 , H01L21/02175 , H01L21/02211 , H01L21/02326 , H01L21/28562 , H01L21/3144 , H01L21/31604 , H01L21/31683 , H01L21/3185 , H01L21/76841 , H01L21/76856 , H01L21/76888
摘要： The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.
摘要翻译：本发明包括用于处理多个分立半导体衬底的方法。离散的半导体衬底被放置在反应室内。当衬底在室内时，它们同时暴露于H，F和Cl中的一种或多种以除去天然氧化物。在除去天然氧化物之后，将基板同时暴露于第一反应性材料，以在基底的至少一些暴露表面上形成第一质量。将第一反应性材料从反应室中除去，随后将基板暴露于第二反应性材料以将第一质量转化为第二质量。本发明还包括可以用于多个分立半导体衬底的同时ALD处理的装置。

97. 发明申请

US20030176047A1 Methods for treating pluralities of discrete semiconductor substrates 审中-公开
标题翻译：用于处理多个分立半导体衬底的方法
公开(公告)号：US20030176047A1
公开(公告)日：2003-09-18
申请号：US10349565
申请日：2003-01-22
发明人： Trung Tri Doan , Lyle D. Breiner , Er-Xuan Ping , Lingyi A. Zheng
IPC分类号： C30B001/00 , H01L021/20 , H01L021/4763
CPC分类号： H01L21/0228 , C23C16/0236 , C23C16/0245 , C23C16/45546 , C23C16/54 , C30B25/02 , H01L21/02046 , H01L21/0214 , H01L21/02142 , H01L21/02164 , H01L21/0217 , H01L21/02175 , H01L21/02211 , H01L21/02326 , H01L21/28562 , H01L21/3144 , H01L21/31604 , H01L21/31683 , H01L21/3185 , H01L21/76841 , H01L21/76856 , H01L21/76888
摘要： The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.
摘要翻译：本发明包括用于处理多个分立半导体衬底的方法。离散的半导体衬底被放置在反应室内。当衬底在室内时，它们同时暴露于H，F和Cl中的一种或多种以除去天然氧化物。在除去天然氧化物之后，将基板同时暴露于第一反应性材料，以在基底的至少一些暴露表面上形成第一质量。将第一反应性材料从反应室中除去，随后将基板暴露于第二反应性材料以将第一质量转化为第二质量。本发明还包括可以用于多个分立半导体衬底的同时ALD处理的装置。

98. 发明授权

US06620251B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US06620251B2
公开(公告)日：2003-09-16
申请号：US09799562
申请日：2001-03-07
申请人： Junichi Kitano
发明人： Junichi Kitano
IPC分类号： C23C1412
CPC分类号： H01L21/02046 , B08B7/0057 , G03F7/085 , G03F7/16 , H01L21/67028 , Y10S134/902
摘要： A closed container composed of a lid body and a lower container are provided in a cover body, and a supply pipe for nitrogen gas is connected to the cover body. A light source unit including UV lamps in the lid body is provided to face a mounting table in the closed container, and a gas supply path for HMDS gas is provided on the outer side from the light source unit. The inside of the cover body is first brought to a nitrogen atmosphere, a wafer is irradiated with ultraviolet rays with the lid body of the closed container opened to perform cleaning. Subsequently, the lid body is closed and the HMDS gas is introduced into the closed container to perform hydrophobic processing for the wafer. This removes deposits such as organic substances adhering to the wafer W through the irradiation with the ultraviolet rays, thereby improving coating properties of a resist solution.
摘要翻译：由盖体和下容器构成的密闭容器设置在盖体内，氮气供给管与盖体连接。在盖体内设置包括紫外灯的光源单元，以与封闭容器内的安装台相对，并且在从光源单元的外侧设置用于HMDS气体的气体供给路径。首先将盖体的内部带入氮气氛，在密封容器的盖体开放的状态下用紫外线照射晶片进行清洗。随后，关闭盖体，并将HMDS气体引入密封容器中以对晶片进行疏水处理。通过紫外线的照射来除去附着在晶片W上的有机物质等沉积物，提高抗蚀剂溶液的涂布性。

99. 发明授权

US06573181B1 Method of forming contact structures using nitrogen trifluoride preclean etch process and a titanium chemical vapor deposition step 失效
标题翻译：使用三氟化氮预清洗蚀刻工艺和钛化学气相沉积步骤形成接触结构的方法
公开(公告)号：US06573181B1
公开(公告)日：2003-06-03
申请号：US09698820
申请日：2000-10-26
申请人： Ramanujapuram A. Srinivas , Mohan K. Bhan , Jennifer Kopp
发明人： Ramanujapuram A. Srinivas , Mohan K. Bhan , Jennifer Kopp
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , H01L21/02046 , H01L21/02063 , H01L21/28518 , H01L21/28556 , H01L21/31116 , H01L21/76814 , H01L21/76855 , H01L21/76856 , Y10S438/963
摘要： A method of forming a contact in an integrated circuit including forming a dielectric layer over a silicon substrate, etching a contact hole through the dielectric layer, exposing the etched contact hole to a plasma formed from a preclean gas comprising nitrogen trifluoride and helium and, thereafter, depositing a titanium layer within the contact hole by a plasma CVD process, where the plasma CVD process heats the substrate to a temperature less than or equal to 650° C.
摘要翻译：一种在集成电路中形成接触的方法，包括在硅衬底上形成电介质层，蚀刻通过电介质层的接触孔，将蚀刻的接触孔暴露于由包含三氟化氮和氦的预清洁气体形成的等离子体，之后，通过等离子体CVD工艺在接触孔中沉积钛层，其中等离子体CVD工艺将衬底加热至低于或等于650℃的温度。

100. 发明授权

US06566269B1 Removal of post etch residuals on wafer surface 有权
标题翻译：去除晶片表面上的后蚀刻残留物
公开(公告)号：US06566269B1
公开(公告)日：2003-05-20
申请号：US09616845
申请日：2000-07-14
申请人： Peter J. Biles , Mario V. Pita , Sylvia M. Luque , Lauri M. Nelson , Robert H. Mills
发明人： Peter J. Biles , Mario V. Pita , Sylvia M. Luque , Lauri M. Nelson , Robert H. Mills
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/02046 , H01L21/31122
摘要： The present invention provides a method of plasma chamber etching of a semiconductor structure having a base layer, an etch stop layer, a dielectric material layer and a patterned photoresist layer. Among other things, the method may include etching selected portions of the dielectric material layer through the photoresist layer using a plasma etchant containing at least one of fluorine and sulfur in a compound such that portions of the photoresist layer may be contaminated with ions of the at least one of the fluorine and sulfur. The method may further include the steps of exhausting the etchant from the plasma chamber, introducing an oxygen containing gas into the plasma chamber, energizing the plasma reactor to create at least oxygen ions for bombarding the photoresist surface to remove at least a portion of the photoresist containing a majority of the contaminating one of the fluorine and sulfur ions whereby the fluorine and sulfur ions combine with other ions in the oxygen containing gas during at least exhaustion of the gas from the chamber, and removing the semiconductor structure containing a remaining portion of the photoresist from the plasma chamber.
摘要翻译：本发明提供了一种具有基底层，蚀刻停止层，介电材料层和图案化光致抗蚀剂层的半导体结构的等离子体室蚀刻的方法。除其他之外，该方法可以包括通过使用在化合物中含有氟和硫中的至少一种的等离子体蚀刻剂通过光致抗蚀剂层蚀刻电介质材料层的选定部分，使得光致抗蚀剂层的一部分可能被在至少一个氟和硫。该方法可以进一步包括以下步骤：从等离子体室排出蚀刻剂，将含氧气体引入等离子体室中，激励等离子体反应器至少产生氧离子以轰击光致抗蚀剂表面以去除至少一部分光致抗蚀剂含有大部分污染的氟和硫离子，由此氟和硫离子在至少从室中排出的气体中与含氧气体中的其它离子结合，并且除去包含剩余部分的半导体结构来自等离子体室的光致抗蚀剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式