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1. 发明申请

US20040259387A1 Laser irradiation apparatus and method of fabricating semiconductor device 失效
标题翻译：激光照射装置及半导体装置的制造方法
公开(公告)号：US20040259387A1
公开(公告)日：2004-12-23
申请号：US10700516
申请日：2003-11-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji , Koichiro Tanaka
IPC分类号： H01L021/00 , H01L021/324 , H01L021/477 , H01L021/84
CPC分类号： H01L21/02683 , B23K26/0604 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026 , H01L21/268 , H01L29/66757
摘要： According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
摘要翻译：根据本发明，通过预先在半导体膜中掺杂Ar等，并且通过在Ar等的气氛中照射激光，有效地防止了氧和氮混入半导体膜。因此，可以抑制由于能量密度的波动引起的杂质浓度的变化，并且还可以抑制半导体膜的迁移率的变化。此外，在由半导体膜形成的TFT中，还可以抑制导通电流的变化，同时也抑制迁移率。此外，在本发明中，照射转换为在半导体膜中容易吸收的谐波的第一激光以熔化半导体膜并增加基波的吸收系数。

2. 发明申请

US20040253838A1 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20040253838A1
公开(公告)日：2004-12-16
申请号：US10799626
申请日：2004-03-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L021/00 , G02B027/10 , H01L021/477
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/073
摘要： It is an object of the present invention to provide a laser irradiation apparatus which can drastically broaden the area of the beam spot and which can decrease the proportion of the region having inferior crystallinity. In addition, it is an object of the present invention to provide a laser irradiation apparatus which can enhance the throughput while using the continuous wave laser light. Furthermore, it is an object of the present invention to provide a method for manufacturing a semiconductor device and a laser irradiation method using the laser irradiation apparatus. The second laser light of a continuous wave oscillation is irradiated to the region melted by the first laser light of a pulsed oscillation having the harmonic. Specifically, the first laser light has a wavelength not longer than that of visible light (830 nm, preferably not more than 780 nm). The absorption coefficient of the second laser light to the semiconductor film considerably increases because the semiconductor film is melted by the first laser light, and therefore the second laser light becomes easy to be absorbed in the semiconductor film.
摘要翻译：本发明的一个目的是提供一种激光照射装置，其可以大幅度地扩大光点的面积，并且能够降低结晶度差的区域的比例。另外，本发明的目的是提供一种能够在使用连续波激光的同时提高生产率的激光照射装置。此外，本发明的目的是提供一种使用激光照射装置的半导体器件的制造方法和激光照射方法。将连续波振荡的第二激光照射到由具有谐波的脉冲振荡的第一激光熔化的区域。具体而言，第一激光的波长不比可见光的波长（830nm，优选为780nm以下）。由于半导体膜被第一激光熔化，因此第二激光对半导体膜的吸收系数显着增加，因此第二激光容易被半导体膜吸收。

3. 发明申请

US20040241923A1 Laser annealing apparatus and laser annealing method 审中-公开
标题翻译：激光退火装置和激光退火方法
公开(公告)号：US20040241923A1
公开(公告)日：2004-12-02
申请号：US10853116
申请日：2004-05-26
申请人： FUJI PHOTO FILM CO., LTD.
发明人： Masahiro Toida
IPC分类号： H01L021/00 , H01L021/324 , H01L021/477
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0619 , B23K26/067
摘要： A temperature distribution which is of the sum of the temperature distribution generated by a laser beam emitted from above and the temperature distribution generated by the laser beam emitted from below at the same irradiation position in a film which is of a subject of laser annealing is caused to be substantially constant in a thickness direction of the subject to be annealed. Therefore, a solid-liquid interface is formed substantially perpendicular to a surface direction of the subject to be annealed, crystal growth in a lateral direction is promoted, and a large crystal grain can be formed. As a result, even if the subject to be annealed has a thin film thickness, the annealing process can be performed by utilizing input energy without waste of the input energy.
摘要翻译：引起由激光退火对象的薄膜中的同一照射位置产生的温度分布与从上方发射的激光束产生的温度分布和由下面发射的激光束产生的温度分布之和的温度分布，在待退火对象的厚度方向上基本恒定。因此，固体 - 液体界面基本上垂直于待退火对象的表面方向形成，促进横向晶体生长，并且可以形成大的晶粒。结果，即使被退火对象具有薄膜厚度，也可以通过利用输入能量而不浪费输入能量来进行退火处理。

4. 发明申请

US20040241922A1 Laser annealing method and apparatus 失效
标题翻译：激光退火方法和装置
公开(公告)号：US20040241922A1
公开(公告)日：2004-12-02
申请号：US10852155
申请日：2004-05-25
申请人： FUJI PHOTO FILM CO., LTD.
发明人： Masahiro Toida
IPC分类号： H01L021/00 , H01L021/324 , H01L021/477
CPC分类号： H01L21/268 , B23K26/0613 , B23K26/064 , B23K26/0643 , B23K26/0676 , B23K26/083
摘要： A laser beam emitted from a laser light source is transmitted plural times through an a-Si layer on a substrate to be annealed by irradiating the a-Si layer with the laser beam so that a direction of the laser beam is reversed along an optical path along which the laser beam is transmitted through the a-Si layer. Since an operation in which energy is absorbed is repeated plural times when the laser beam is transmitted through the a-Si layer, input energy of the laser beam can be utilized without waste. Further, in an area of the a-Si layer that the laser beam is transmitted plural times, crystal growth in a lateral direction can be realized to form a large crystal grain in such a manner that an energy absorption distribution generated in a transmission direction is made constant to cause a solid-liquid interface to be flat along the optical path.
摘要翻译：从激光光源发射的激光束通过用激光束照射a-Si层，通过a-Si层在待退火的基板上透射多次，使得激光束的方向沿光路反转沿着该激光束透过a-Si层。由于当激光束通过a-Si层传输时，多次吸收能量的操作，所以可以无浪费地使用激光束的输入能量。此外，在a-Si层的多个区域中激光束被透射多次，可以实现沿横向的晶体生长，从而形成大的晶粒，使得在透射方向上产生的能量吸收分布为使得固 - 液界面沿光路平坦。

5. 发明申请

US20040152271A1 Method of forming bottom oxide layer in trench structure 有权
标题翻译：在沟槽结构中形成底部氧化物层的方法
公开(公告)号：US20040152271A1
公开(公告)日：2004-08-05
申请号：US10668454
申请日：2003-09-22
申请人： MOSEL VITELIC, INC.
发明人： Ta-Chung Wu , Yi-Chuan Yang , Shih-Chi Lai , Yew-Jung Chang
IPC分类号： H01L021/42 , H01L021/336 , H01L021/324 , H01L021/26 , H01L021/477
CPC分类号： H01L21/76224 , H01L29/42368 , H01L29/7813
摘要： Embodiments of the invention are directed to a method of forming a bottom oxide in a trench structure. In one embodiment, the method includes steps of providing a semiconductor substrate and forming a trench structure in the semiconductor substrate; performing an PECVD process with TEOS as a source to deposit an oxide layer on the bottom and sidewall of the trench structure and the semiconductor substrate; and removing the oxide layer on the sidewall of the trench structure substantially completely and the oxide layer on the bottom of the trench structure partially to define the remained oxide layer as the bottom oxide layer.
摘要翻译：本发明的实施例涉及在沟槽结构中形成底部氧化物的方法。在一个实施例中，该方法包括以下步骤：提供半导体衬底并在半导体衬底中形成沟槽结构; 以TEOS作为源进行PECVD处理，以在沟槽结构和半导体衬底的底部和侧壁上沉积氧化物层; 并且基本上完全去除沟槽结构的侧壁上的氧化物层，并且部分地去除沟槽结构的底部上的氧化物层以限定作为底部氧化物层的剩余氧化物层。

6. 发明申请

US20040115931A1 Method and apparatus for laser annealing 失效
标题翻译：激光退火的方法和装置
公开(公告)号：US20040115931A1
公开(公告)日：2004-06-17
申请号：US10319310
申请日：2002-12-12
发明人： Mark Y. Liu , Mitchell Taylor
IPC分类号： H01L021/44 , H01L021/26 , H01L021/324 , H01L021/42 , H01L021/477
CPC分类号： H01L21/268 , Y10T117/1068
摘要： Numerous embodiments of a method and apparatus for laser annealing are disclosed. In one embodiment, a method of laser annealing comprises performing one or more annealing processes on one or more portions of a semiconductor device, where one or more annealing processes performed on one or more portions of the semiconductor device are varied based at least in part on the particular portion of the semiconductor device being annealed, and/or on one or more desirable characteristics of the particular portion of the semiconductor device being annealed.
摘要翻译：公开了用于激光退火的方法和装置的许多实施例。在一个实施例中，激光退火的方法包括对半导体器件的一个或多个部分执行一个或多个退火处理，其中对半导体器件的一个或多个部分执行的一个或多个退火处理至少部分地基于退火的半导体器件的特定部分和/或退火的半导体器件的特定部分的一个或多个期望特性。

7. 发明申请

US20040097076A1 Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioning 失效
标题翻译：控制使用光化学敏感化学品进行蚀刻，清洁和表面调理
公开(公告)号：US20040097076A1
公开(公告)日：2004-05-20
申请号：US10294266
申请日：2002-11-14
发明人： Subramanyam A. Iyer , Justin K. Brask , Vijayakumar S. Ramachandrarao
IPC分类号： H01L021/66 , G01R031/26 , H01L021/477 , H01L021/26
CPC分类号： H01L22/26 , H01L21/02052 , H01L21/306 , H01L21/31116 , H01L21/31133
摘要： Radiant energy may be applied to a photochemically susceptible etching or conditioning solution to enable precise control of the removal of material or alteration of the top surface of a wafer during the fabrication of semiconductor integrated circuits. A particular condition may be detected during the course of photoactivated generation of free radicals or molecular activation to control the further generation of said species by controlling the radiant energy exposure of a wafer.
摘要翻译：辐射能量可以应用于光化学敏感的蚀刻或调理溶液，以在半导体集成电路的制造期间精确地控制材料的去除或晶片顶表面的改变。在光活化产生自由基或分子活化的过程中可以检测到特定的条件，以通过控制晶片的辐射能量暴露来控制所述物质的进一步产生。

8. 发明申请

US20030236003A1 Method of forming barrier layer of semiconductor device 失效
标题翻译：形成半导体器件阻挡层的方法
公开(公告)号：US20030236003A1
公开(公告)日：2003-12-25
申请号：US10175812
申请日：2002-06-21
发明人： Kyeongmo Koo , Jaihyung Won , Hyeonill Um , Junhyuk Jung , Sangwook Park
IPC分类号： H01L021/425 , H01L021/44 , H01L021/26 , H01L021/324 , H01L021/42 , H01L021/477
CPC分类号： H01L21/76843 , H01L21/02046 , H01L21/28518 , H01L21/3003 , H01L21/76814 , H01L21/76856 , H01L21/76862 , Y10S438/906
摘要： A method of forming a barrier layer of a semiconductor device features a plurality of controlled steps for reducing contact resistance and microvoids in conductive contact pads of the semiconductor device through the use of a hydrogen-based plasma cleaning and deposition process. An alternate embodiment additionally provides a method for reactively removing chemical contaminants in the interfacial surfaces of the layers comprising the conductive contact pads.
摘要翻译：形成半导体器件的阻挡层的方法具有多个受控步骤，用于通过使用基于氢的等离子体清洗和沉积工艺来减小半导体器件的导电接触焊盘中的接触电阻和微孔。替代实施例另外提供了一种用于反应性地去除包括导电接触垫的层的界面中的化学污染物的方法。

9. 发明申请

US20030170583A1 Heat treatment apparatus and a method for fabricating substrates 审中-公开
标题翻译：热处理装置及其制造方法
公开(公告)号：US20030170583A1
公开(公告)日：2003-09-11
申请号：US10373754
申请日：2003-02-27
申请人： Hitachi Kokusai Electric Inc.
发明人： Sadao Nakashima , Tomoharu Shimada , Kenichi Ishiguro
IPC分类号： H01L021/477 , H01L021/324 , H01L021/42 , H01L021/26 , F27D003/12 , F27D001/00 , F27D005/00
CPC分类号： H01L21/67306 , C30B33/00 , H01L21/67309
摘要： A heat treatment apparatus for performing a heat treatment on one or more substrates includes a substrate support device holding the substrates, the substrate support device having a main body and a contact portion being in contact with a substrate. A surface of the main body is made of a material different from that of the contact portion, and at least a surface of the contact portion is made of either glassy carbon or graphite.
摘要翻译：用于对一个或多个基板进行热处理的热处理装置包括：保持基板的基板支撑装置，具有主体的基板支撑装置和与基板接触的接触部。主体的表面由不同于接触部分的材料制成，并且至少接触部分的表面由玻璃碳或石墨制成。

10. 发明申请

US20030157815A1 Ammonia gas passivation on nitride encapsulated devices 有权
标题翻译：氮气封装装置上的氨气钝化
公开(公告)号：US20030157815A1
公开(公告)日：2003-08-21
申请号：US10377495
申请日：2003-02-27
发明人： Ronald A. Weimer , Fernando Gonzalez
IPC分类号： H01L021/324 , H01L021/42 , H01L021/477 , H01L021/26
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/2822 , H01L21/3003 , H01L21/3185 , H01L23/3171 , H01L29/513 , H01L29/518 , H01L2924/0002 , H01L2924/19041 , H01L2924/00
摘要： A method for passivating at least interfaces between structures formed from a conductive or semiconductive material and adjacent dielectric structures so as to reduce a concentration of dangling silicon bonds at these interfaces and to reduce or eliminate the occurrence of unwanted voltage changes across the dielectric structures. The method includes exposing at least the interfaces to at least hydrogen species and forming an encapsulant layer that substantially contains the hydrogen species in the presence of the interfaces. The encapsulant layer substantially prevents the hydrogen species from escaping therethrough as processes that require temperatures of at least about 400null C. or of at least about 600null C. are conducted. Once such high temperature processes have been completed, portions of the encapsulant layer may be removed. Methods and systems for passivating semiconductor device structures are also disclosed, as are semiconductor device structures passivated according to the disclosed methods.
摘要翻译：一种用于钝化由导电或半导体材料和相邻电介质结构形成的结构之间的至少界面的方法，以便减少在这些界面处的悬挂硅键的浓度，并且减少或消除跨介电结构的不期望的电压变化的发生。该方法包括至少将界面暴露于至少氢物质并形成在界面存在下基本上含有氢物质的密封剂层。当需要至少约400℃或至少约600℃的温度的工艺时，密封剂层基本上防止氢物质逸出。一旦这样的高温过程完成，可以去除部分密封剂层。还公开了钝化半导体器件结构的方法和系统，半导体器件结构根据所公开的方法钝化。

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