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1. 发明授权

US07452808B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 失效
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US07452808B2
公开(公告)日：2008-11-18
申请号：US10988768
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

2. 发明申请

US20060280698A1 System for treating conditions of the periodontium 审中-公开
标题翻译：治疗牙周膜病变的系统
公开(公告)号：US20060280698A1
公开(公告)日：2006-12-14
申请号：US11152499
申请日：2005-06-14
申请人： Subhash Gupta , Dennis Flanagan
发明人： Subhash Gupta , Dennis Flanagan
IPC分类号： A61K8/96 , A61K36/18
CPC分类号： A61Q11/00 , A61K8/97 , A61K36/18
摘要： A system for treating conditions of the periodontium, such as gingivitis and periodontitis, includes an Ayurvedic medicinal solution and an applicator for delivering the solution to the periodontium. The Ayurvedic medicinal solution utilizes herbal extracts to break-down bacteria which can inflame gum tissue. In one embodiment, the solution comprises approximately 1 gram of triphala extract for every 10 ml of glycerine. In another embodiment, the solution comprises approximately 1 gram of amla extract for every 10 ml of glycerine. The applicator for delivering the solution to the periodontium may either be in the form of a cotton swab-type wand, a pipette or a spray dispenser.
摘要翻译：用于治疗牙周病例如牙龈炎和牙周炎的系统包括阿育吠陀药用溶液和用于将溶液递送到牙周膜的施用器。阿育吠陀药用溶液利用草药提取物分解可以使牙龈组织发炎的细菌。在一个实施方案中，该溶液包含每10ml甘油约1克的三菌属提取物。在另一个实施方案中，该溶液包含每10ml甘油约1克的amla提取物。用于将溶液递送到牙周组织的施用器可以是棉签式棒，移液管或喷雾分配器的形式。

3. 发明授权

US06967162B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
公开(公告)号：US06967162B2
公开(公告)日：2005-11-22
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

4. 发明申请

US20050181081A1 Anti-dermatophytic preparation and use thereof 失效
标题翻译：抗皮肤真菌制剂及其用途
公开(公告)号：US20050181081A1
公开(公告)日：2005-08-18
申请号：US10761804
申请日：2004-01-21
申请人： Suman Khanuja , Pushplata Chaturvedi , Anil Singh , Ajit Shasany , Vinay Agarwal , Vivek Gupta , Subhash Gupta , Arun Tripathy , Anirban Pal , Dharmendra Saikia , Mahendra Darokar , Krishna Aggarwal , Ravi Bansal
发明人： Suman Khanuja , Pushplata Chaturvedi , Anil Singh , Ajit Shasany , Vinay Agarwal , Vivek Gupta , Subhash Gupta , Arun Tripathy , Anirban Pal , Dharmendra Saikia , Mahendra Darokar , Krishna Aggarwal , Ravi Bansal
IPC分类号： A61K36/00 , A61K36/534 , A61K36/54 , A61K36/8962 , A61K35/78
CPC分类号： A61K36/54 , A61K36/534 , A61K36/8962 , A61K2300/00
摘要： The present invention provides an improved preparation based on the synergistic action of garlic extract and essential oil of M. spicata var. Ganga or cinnamon oil against dermatophytic fungus. More particularly, the present invention relates to the synergistic enhancement of activity of a combination by menthyl acetate or Geraniol. The invention also provides a method of preparation of the synergistic combination and the shelf life observed to be more than one year. The cream based preparation is a potent anti-dermatophytic as described and illustrated by in vitro and in vivo evaluations.
摘要翻译：本发明提供了一种改进的制剂，其基于大蒜提取物和M.spicata var。的精油的协同作用。甘草或肉桂油抗皮肤真菌。更具体地，本发明涉及通过乙酸薄荷酯或香叶醇组合的协同增强活性。本发明还提供了一种制备协同组合的方法和观察到的一年以上的保质期。基于乳膏的制剂是有效的抗皮肤真菌病，如通过体外和体内评价所描述和说明的。

5. 发明申请

US20050100610A1 Use of bioactive fraction from cow urine distillate ('Go-mutra'} as a bio-enhancer of anti-infective, anti-cancer agents and nutrients 失效
$Use of bioactive fraction from cow urine distillate ('Go-mutra'} as a bio-enhancer of anti-infective, anti-cancer agents and nutrients$
标题翻译：使用来自牛尿馏分（“Go-mutra”）的生物活性成分作为抗感染，抗癌剂和营养物质的生物增强剂
公开(公告)号：US20050100610A1
公开(公告)日：2005-05-12
申请号：US10822790
申请日：2004-04-13
申请人： Suman Khanuja , Sushil Kumar , Ajit Shasany , Jai Arya , Mahendra Darokar , Monika Singh , Prachi Sinha , Soumya Awasthi , Subhash Gupta , Vivek Gupta , Madan Gupta , Ram Verma , Sweta Agarwal , Sunil Mansinghka , Suresh Dawle
发明人： Suman Khanuja , Sushil Kumar , Ajit Shasany , Jai Arya , Mahendra Darokar , Monika Singh , Prachi Sinha , Soumya Awasthi , Subhash Gupta , Vivek Gupta , Madan Gupta , Ram Verma , Sweta Agarwal , Sunil Mansinghka , Suresh Dawle
IPC分类号： A61K35/22 , A61K45/06 , A61P31/00 , A61P35/00 , A61K33/40 , A61K31/4965 , A61K31/4709 , A61K31/496 , A61K31/65
CPC分类号： A61K45/06 , A61K35/22 , A61K2300/00
摘要： The invention relates to a novel pharmaceutical composition comprising an effective amount of bio-active fraction from cow urine distillate as a bioavailability facilitator and pharmaceutically acceptable additives selected from anticancer compounds, antibiotics, drugs, therapeutic and nutraceutic agents, ions and similar molecules which are targeted to the living systems.
摘要翻译：本发明涉及一种新型药物组合物，其包含有效量的来自牛尿馏分的生物活性级分作为生物利用度促进剂和选自抗癌化合物，抗生素，药物，治疗和营养药物，离子和类似分子的药学上可接受的添加剂到生活系统。

6. 发明申请

US20050090102A1 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US20050090102A1
公开(公告)日：2005-04-28
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

7. 发明授权

US06531390B2 Non-metallic barrier formations for copper damascene type interconnects 有权
公开(公告)号：US06531390B2
公开(公告)日：2003-03-11
申请号：US09925819
申请日：2001-08-10
申请人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
发明人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
IPC分类号： H01L218222
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76831
摘要： A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.

8. 发明授权

US06489233B2 Non-metallic barrier formations for copper damascene type interconnects 有权
标题翻译：铜镶嵌型互连的非金属阻挡层
公开(公告)号：US06489233B2
公开(公告)日：2002-12-03
申请号：US09925821
申请日：2001-08-10
申请人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
发明人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
IPC分类号： H01L214763
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76831
摘要： A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.
摘要翻译：用于形成具有非金属屏障的双镶嵌型导电互连的方法，其保护所述互连免受氟周围的低k，氟化介电材料的氟扩散。该方法的一个实施例特别适用于在0.15微米级的微电子制造中形成这种互连。

9. 发明授权

US06465888B2 Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene 有权
标题翻译：复合硅 - 金属氮化物屏障，以防铜铜镶嵌中金属氟化物的形成
公开(公告)号：US06465888B2
公开(公告)日：2002-10-15
申请号：US10043604
申请日：2002-01-14
申请人： Simon Chooi , Subhash Gupta , Mei Sheng Zhou , Sang Ki Hong
发明人： Simon Chooi , Subhash Gupta , Mei Sheng Zhou , Sang Ki Hong
IPC分类号： H01L2352
CPC分类号： H01L21/76844 , H01L21/76807 , H01L21/76831 , H01L21/76855
摘要： A method of forming amorphous silicon spacers followed by the forming of metal nitride over the spacers in a copper damascene structure—single, dual, or multi-structure—is disclosed in order to prevent the formation of fluorides in copper. In a first embodiment, the interconnection between the copper damascene and an underlying copper metal layer is made by forming an opening from the dual damascene structure to the underlying copper layer after the formation of the metal nitride layer over the amorphous silicon spacers formed on the inside walls of the dual damascene structure. In the second embodiment, the interconnection between the dual damascene structure and the underlying copper line is made from the dual damascene structure by etching into the underlying copper layer after the forming of the amorphous silicon spacers and before the forming of the metal nitride layer. In the third embodiment, the ternary metal silicon nitride spacer is formed by etching after having first formed the amorphous silicon layer and the nitride layer, in that order, and then etching the passivation/barrier layer at the bottom of the damascene structure into the underlying copper layer. In all three embodiments, metal nitride reacts with amorphous silicon to form a ternary metal silicon nitride having an excellent property of adhering to copper while at the same time for forming an excellent barrier to diffusion of copper.
摘要翻译：公开了一种形成非晶硅间隔物的方法，随后在铜镶嵌结构 - 单，双或多结构中在间隔物上形成金属氮化物，以防止铜中氟化物的形成。在第一实施例中，通过在形成在内部的非晶硅间隔物上形成金属氮化物层之后，通过从双镶嵌结构形成开口到下面的铜层来形成铜镶嵌层和下面的铜金属层之间的互连双镶嵌结构的墙壁。在第二实施例中，通过在形成非晶硅间隔物之后并且在形成金属氮化物层之前通过蚀刻到下面的铜层中，由双镶嵌结构制造双镶嵌结构和下面的铜线之间的互连。在第三实施例中，三元金属氮化硅间隔物依次先形成非晶硅层和氮化物层后，通过蚀刻形成，然后在镶嵌结构底部蚀刻钝化/阻挡层，形成底层铜层。在所有三个实施例中，金属氮化物与非晶硅反应形成具有优异的粘附铜特性的三元金属氮化硅，同时形成对铜的扩散的优异屏障。

10. 发明授权

US06372636B1 Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene 有权
标题翻译：复合硅 - 金属氮化物屏障，以防铜铜镶嵌中金属氟化物的形成
公开(公告)号：US06372636B1
公开(公告)日：2002-04-16
申请号：US09587467
申请日：2000-06-05
申请人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
发明人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
IPC分类号： H01L214763
CPC分类号： H01L21/76844 , H01L21/76807 , H01L21/76831 , H01L21/76855
摘要： A method of forming amorphous silicon spacers followed by the forming of metal nitride over the spacers in a copper damascene structure -single, dual, or multi-structure- is disclosed in order to prevent the formation of fluorides in copper. In a first embodiment, the interconnection between the copper damascene and an underlying copper metal layer is made by forming an opening from the dual damascene structure to the underlying copper layer after the formation of the metal nitride layer over the amorphous silicon spacers formed on the inside walls of the dual damascene structure. In the second embodiment, the interconnection between the dual damascene structure and the underlying copper line is made from the dual damascene structure by etching into the underlying copper layer after the forming of the amorphous silicon spacers and before the forming of the metal nitride layer. In the third embodiment, the ternary metal silicon nitride spacer is formed by etching after having first formed the amorphous silicon layer and the nitride layer, in that order, and then etching the passivation/barrier layer at the bottom of the damascene structure into the underlying copper layer. In all three embodiments, metal nitride reacts with amorphous silicon to form a ternary metal silicon nitride having an excellent property of adhering to copper while at the same time for forming an excellent barrier to diffusion of copper.
摘要翻译：公开了一种形成非晶硅间隔物的方法，随后在铜镶嵌结构 - 单，双或多结构中在间隔物上形成金属氮化物，以防止在铜中形成氟化物。在第一实施例中，通过在形成在内部的非晶硅间隔物上形成金属氮化物层之后，通过从双镶嵌结构形成开口到下面的铜层来形成铜镶嵌层和下面的铜金属层之间的互连双镶嵌结构的墙壁。在第二实施例中，通过在形成非晶硅间隔物之后并且在形成金属氮化物层之前通过蚀刻到下面的铜层中，由双镶嵌结构制造双镶嵌结构和下面的铜线之间的互连。在第三实施例中，三元金属氮化硅间隔物依次先形成非晶硅层和氮化物层后，通过蚀刻形成，然后在镶嵌结构的底部蚀刻钝化/阻挡层，形成底层铜层。在所有三个实施例中，金属氮化物与非晶硅反应形成具有优异的粘附铜特性的三元金属氮化硅，同时形成对铜的扩散的优异屏障。

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