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91. 发明申请

US20080138960A1 METHOD OF MANUFACTURING A STACK-TYPE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造堆叠型半导体器件的方法
公开(公告)号：US20080138960A1
公开(公告)日：2008-06-12
申请号：US11936965
申请日：2007-11-08
申请人： Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Young-Ho Koh , Seong-Kyu Yun , Jong-Heun Lim
发明人： Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Young-Ho Koh , Seong-Kyu Yun , Jong-Heun Lim
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/3212 , H01L21/32139
摘要： A method of manufacturing a stack-type semiconductor device, in which a first substrate and a second substrate are prepared so that the first substrate has a surface layer and the second substrate has an insulation layer. The first substrate and the second substrate are attached to each other to allow the surface layer to make contact with the insulation layer. The first substrate is partially separated from the second substrate to allow the surface layer to remain on a central portion of the second substrate. A sacrificial layer pattern is then formed on an edge portion of the second substrate having the surface layer. The sacrificial layer pattern and the surface layer are planarized. Thus, the sacrificial layer pattern may reduce damage to the edge portion of the second substrate so that the second substrate may have an improved flatness.
摘要翻译：制造堆叠型半导体器件的方法，其中制备第一衬底和第二衬底，使得第一衬底具有表面层，并且第二衬底具有绝缘层。第一基板和第二基板彼此附接以允许表面层与绝缘层接触。第一衬底与第二衬底部分地分离以允许表面层保留在第二衬底的中心部分上。然后在具有表面层的第二基板的边缘部分上形成牺牲层图案。牺牲层图案和表面层被平坦化。因此，牺牲层图案可以减小对第二基板的边缘部分的损伤，使得第二基板可以具有改善的平坦度。

92. 发明申请

US20080124913A1 Slurry compositions and CMP methods using the same 有权
公开(公告)号：US20080124913A1
公开(公告)日：2008-05-29
申请号：US11984399
申请日：2007-11-16
申请人： Jaekwang Choi , Jaedong Lee , Chang-Ki Hong
发明人： Jaekwang Choi , Jaedong Lee , Chang-Ki Hong
IPC分类号： H01L21/4763 , H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/7684
摘要： The exemplary embodiments of the present invention providing new slurry compositions suitable for use in processes involving the chemical mechanical polishing (CMP) of a polysilicon layer. The slurry compositions include one or more non-ionic polymeric surfactants that will selectively form a passivation layer on an exposed polysilicon surface in order to suppress the polysilicon removal rate relative to silicon oxide and silicon nitride and improve the planarity of the polished substrate. Exemplary surfactants include alkyl and aryl alcohols of ethylene oxide (EO) and propylene oxide (PO) block copolymers and may be present in the slurry compositions in an amount of up to about 5 wt %, although much smaller concentrations may be effective. Other slurry additives may include viscosity modifiers, pH modifiers, dispersion agents, chelating agents, and amine or imine surfactants suitable for modifying the relative removal rates of silicon nitride and silicon oxide.

93. 发明申请

US20070184663A1 Method of planarizing a semiconductor device 审中-公开
标题翻译：平面化半导体器件的方法
公开(公告)号：US20070184663A1
公开(公告)日：2007-08-09
申请号：US11702124
申请日：2007-02-05
申请人： Jun-Yong Kim , Ho-Young Kim , Chang-Ki Hong , Bo-Un Yoon , Sung-Ho Shin
发明人： Jun-Yong Kim , Ho-Young Kim , Chang-Ki Hong , Bo-Un Yoon , Sung-Ho Shin
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053
摘要： Example embodiments are directed to a method of planarizing a semiconductor device. A first CMP process may be performed on an insulating layer to remove a stepped structure of the insulating layer. A second CMP process may be performed to planarize the insulating layer with the stepped structure removed until a given pattern is exposed. A process temperature of the first CMP process may be higher than that of the second CMP process. Accordingly, an initial stepped structure may be more readily removed in a planarization process of a surface of the semiconductor device, which may reduce the CMP process time and may increase the degree of planarization.
摘要翻译：示例性实施例涉及一种平面化半导体器件的方法。可以在绝缘层上执行第一CMP工艺以去除绝缘层的阶梯状结构。可以执行第二CMP工艺以使去除直到给定图案暴露的阶梯结构的绝缘层平坦化。第一CMP工艺的工艺温度可以高于第二CMP工艺的工艺温度。因此，可以在半导体器件的表面的平坦化处理中更容易地去除初始阶梯结构，这可以减少CMP处理时间并且可以增加平坦化程度。

94. 发明申请

US20070178706A1 Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same 有权
标题翻译：硅表面清洗液及使用其制造半导体器件的方法
公开(公告)号：US20070178706A1
公开(公告)日：2007-08-02
申请号：US11656470
申请日：2007-01-23
申请人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
IPC分类号： H01L21/302
CPC分类号： H01L21/02063
摘要： A cleaning solution and methods of fabricating semiconductor devices using the same are provided. A cleaning solution used for cleaning a silicon surface and methods of fabricating a semiconductor device using the same are also provided. The cleaning solution may include 0.01 to 1 wt % of fluoric acid, 20 to 50 wt % of oxidizer and 50 to 80 wt % of water. The cleaning solution may further include 1 to 20 wt % of acetic acid. The cleaning solution may be used Lo clean a silicon surface exposed during fabrication processes of a semiconductor device. The cleaning solution may reduce damage of other material layers (e.g., a tungsten layer or a silicon oxide layer) and enable the silicon surface to be selectively etched.
摘要翻译：提供一种清洁溶液和使用其制造半导体器件的方法。还提供了用于清洁硅表面的清洁溶液以及使用其制造半导体器件的方法。清洗液可以含有0.01〜1重量％的氟酸，20〜50重量％的氧化剂和50〜80重量％的水。清洗溶液还可以含有1〜20重量％的乙酸。可以使用清洁溶液Lo清洁在半导体器件的制造过程中暴露的硅表面。清洁溶液可以减少其它材料层（例如，钨层或氧化硅层）的损伤，并且能够选择性地蚀刻硅表面。

95. 发明申请

US20070163618A1 Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same 有权
标题翻译：硅表面清洗液及使用其制造半导体器件的方法
公开(公告)号：US20070163618A1
公开(公告)日：2007-07-19
申请号：US11489494
申请日：2006-07-20
申请人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Woo-Gwan Shim
IPC分类号： B08B6/00
CPC分类号： C11D11/0047 , C11D7/02 , C11D7/08 , C11D7/10 , C11D7/265 , H01L21/02057 , H01L21/02063
摘要： There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CH3COOH) and ammonium acetate (CH3COONH4), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricating a semiconductor device, a silicon substrate may have an exposed silicon surface, which may be cleaned using a cleaning solution that contains a buffer solution including acetic acid and ammonium acetate, iodine oxidizer, hydrofluoric acid, and water.
摘要翻译：提供了含有含有乙酸（CH 3 COOH）和乙酸铵（CH 3 COCO 4）的缓冲溶液的硅表面的清洗溶液 >），碘氧化剂，氢氟酸（HF）和水。在制造半导体器件的方法中，硅衬底可以具有暴露的硅表面，其可以使用包含含有乙酸和乙酸铵，碘氧化剂，氢氟酸和水的缓冲溶液的清洁溶液进行清洁。

96. 发明授权

US07244649B2 Method of manufacturing a capacitor having improved capacitance and method of manufacturing a semiconductor device including the capacitor 失效
标题翻译：制造具有改善电容的电容器的方法和制造包括该电容器的半导体器件的方法
公开(公告)号：US07244649B2
公开(公告)日：2007-07-17
申请号：US11007443
申请日：2004-12-09
申请人： Jae-Dong Lee , Chang-Ki Hong , Young-Rae Park
发明人： Jae-Dong Lee , Chang-Ki Hong , Young-Rae Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852
摘要： A method for manufacturing a capacitor is disclosed. An etch-stop layer or a polishing stop layer is employed to protect a storage electrode of the capacitor from being damaged by a chemical mechanical polishing process or an etch-back process during its fabrication.
摘要翻译：公开了一种制造电容器的方法。使用蚀刻停止层或抛光停止层来保护电容器的存储电极在其制造期间被化学机械抛光工艺或回蚀工艺损坏。

97. 发明授权

US07223693B2 Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by same 失效
标题翻译：用于制造使用牺牲层的存储器件和由其制造的存储器件的方法
公开(公告)号：US07223693B2
公开(公告)日：2007-05-29
申请号：US11168894
申请日：2005-06-28
申请人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son
发明人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son
IPC分类号： H01L21/00
CPC分类号： H01L21/7684 , H01L21/76816 , H01L21/76831 , H01L21/76883 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Methods are provided for fabricating contacts in integrated circuit devices, such as phase-change memories. A protection layer and a sacrificial layer are sequentially formed on a semiconductor substrate. A contact hole is formed through the sacrificial layer and the protection layer. A conductive layer is formed on the sacrificial layer and in the contact hole, and portions of the conductive layer and the sacrificial layer are removed to expose the protection layer and form a conductive plug protruding from the protection layer. A protruding portion of the conductive plug removed to leave a contact plug in the protection layer. A phase-change data storage element may be formed on the contact plug.
摘要翻译：提供了用于在诸如相变存储器的集成电路器件中制造触点的方法。在半导体衬底上依次形成保护层和牺牲层。通过牺牲层和保护层形成接触孔。在牺牲层和接触孔中形成导电层，并且去除导电层和牺牲层的部分以露出保护层并形成从保护层突出的导电插塞。去除导电塞的突出部分，以在保护层中留下接触塞。可以在接触插塞上形成相变数据存储元件。

98. 发明申请

US20060037942A1 Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry 审中-公开
标题翻译：使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成电容器表面的方法
公开(公告)号：US20060037942A1
公开(公告)日：2006-02-23
申请号：US11170061
申请日：2005-06-30
申请人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
发明人： Seong-Kyu Yun , Kenichi Orui , Chang-Ki Hong , Jae-Dong Lee , Sung-Jun Kim , Haruki Nojo
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302
CPC分类号： C03C19/00 , C03C2218/328 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming a surface of a capacitor using the slurry. The slurry may include an abrasive, an oxidizer, and at least one pH controller to control a pH of the slurry.
摘要翻译：使用浆料的浆料，化学机械抛光（CMP）方法以及使用该浆料形成电容器表面的方法。浆料可以包括研磨剂，氧化剂和至少一种pH控制剂以控制浆料的pH。

99. 发明申请

US20050113009A1 Polishing pad conditioner and chemical mechanical polishing apparatus having the same 有权
标题翻译：抛光垫调节剂及其化学机械抛光装置
公开(公告)号：US20050113009A1
公开(公告)日：2005-05-26
申请号：US10985206
申请日：2004-11-10
申请人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
发明人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
IPC分类号： B24B53/007 , B24B53/02 , B24B7/00
CPC分类号： B24B53/017 , B24B53/02
摘要： Chemical mechanical apparatuses including a polishing pad conditioning unit for improving a conditioning rate and wear uniformity of a polishing pad are provided. In one aspect, a chemical mechanical polishing apparatus includes a polishing pad conditioner including conditioning disks disposed in a radial direction of a planarizing surface of a circular polishing pad and contacted with the planarizing surface of the circular polishing pad during rotation of the circular polishing pad. The conditioning disks are connected to first drive units supported by an arm disposed over the circular polishing pad and extended in a radial direction of a planarizing surface of the circular polishing pad. The arm is connected to second drive units. The second drive units move the arm horizontally and reciprocally in the radial direction of the planarizing surface of the circular polishing pad. Thus, a conditioning rate and wear uniformity of the polishing pad may be improved.
摘要翻译：提供了包括用于改善抛光垫的调理率和磨损均匀性的抛光垫调节单元的化学机械设备。在一个方面，一种化学机械抛光装置包括抛光垫调节器，其包括在圆形抛光垫的平坦化表面的径向方向上设置的调节盘，并且在圆形抛光垫的旋转期间与圆形抛光垫的平坦化表面接触。调节盘连接到由设置在圆形抛光垫上的臂支撑的第一驱动单元，并且在圆形抛光垫的平坦化表面的径向方向上延伸。臂连接到第二个驱动单元。第二驱动单元在圆形抛光垫的平坦化表面的径向水平和往复地移动臂。因此，可以提高抛光垫的调理率和磨损均匀性。

100. 发明授权

US08148710B2 Phase-change memory device using a variable resistance structure 有权
标题翻译：使用可变电阻结构的相变存储器件
公开(公告)号：US08148710B2
公开(公告)日：2012-04-03
申请号：US12805824
申请日：2010-08-20
申请人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
发明人： Suk-Hun Choi , Chang-Ki Hong , Yoon-Ho Son , Jang-Eun Heo
IPC分类号： H01L47/00 , H01L29/08 , H01L29/18
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second contact hole is disposed on the semiconductor substrate, exposing the first and second contact regions. A first conductive layer is disposed on the first insulating interlayer to fill the first and the second contact holes. A first protection layer pattern and a lower wiring protection pattern are disposed on the first conductive layer. A first contact with a first electrode and a second contact with a lower wiring are disposed so as to connect the first and second contact regions. A second protection layer with a second electrode is disposed on the first protection layer pattern and the lower wiring protection pattern. A via filled with a phase-change material is disposed between the first electrode and the second electrode.
摘要翻译：一种相变存储器件，包括形成在半导体衬底上的第一接触区域和第二接触区域。具有第一接触孔和第二接触孔的第一绝缘层设置在半导体衬底上，暴露第一和第二接触区域。第一导电层设置在第一绝缘中间层上以填充第一和第二接触孔。第一保护层图案和下布线保护图案设置在第一导电层上。设置与第一电极和与下布线的第二接触件的第一接触，以便连接第一和第二接触区域。具有第二电极的第二保护层设置在第一保护层图案和下布线保护图案上。填充有相变材料的通孔设置在第一电极和第二电极之间。

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