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1. 发明申请

US20050113009A1 Polishing pad conditioner and chemical mechanical polishing apparatus having the same 有权
标题翻译：抛光垫调节剂及其化学机械抛光装置
公开(公告)号：US20050113009A1
公开(公告)日：2005-05-26
申请号：US10985206
申请日：2004-11-10
申请人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
发明人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
IPC分类号： B24B53/007 , B24B53/02 , B24B7/00
CPC分类号： B24B53/017 , B24B53/02
摘要： Chemical mechanical apparatuses including a polishing pad conditioning unit for improving a conditioning rate and wear uniformity of a polishing pad are provided. In one aspect, a chemical mechanical polishing apparatus includes a polishing pad conditioner including conditioning disks disposed in a radial direction of a planarizing surface of a circular polishing pad and contacted with the planarizing surface of the circular polishing pad during rotation of the circular polishing pad. The conditioning disks are connected to first drive units supported by an arm disposed over the circular polishing pad and extended in a radial direction of a planarizing surface of the circular polishing pad. The arm is connected to second drive units. The second drive units move the arm horizontally and reciprocally in the radial direction of the planarizing surface of the circular polishing pad. Thus, a conditioning rate and wear uniformity of the polishing pad may be improved.
摘要翻译：提供了包括用于改善抛光垫的调理率和磨损均匀性的抛光垫调节单元的化学机械设备。在一个方面，一种化学机械抛光装置包括抛光垫调节器，其包括在圆形抛光垫的平坦化表面的径向方向上设置的调节盘，并且在圆形抛光垫的旋转期间与圆形抛光垫的平坦化表面接触。调节盘连接到由设置在圆形抛光垫上的臂支撑的第一驱动单元，并且在圆形抛光垫的平坦化表面的径向方向上延伸。臂连接到第二个驱动单元。第二驱动单元在圆形抛光垫的平坦化表面的径向水平和往复地移动臂。因此，可以提高抛光垫的调理率和磨损均匀性。

2. 发明申请

US20070145012A1 Slurry and method for chemical-mechanical polishing 审中-公开
标题翻译：浆料和化学机械抛光方法
公开(公告)号：US20070145012A1
公开(公告)日：2007-06-28
申请号：US11542256
申请日：2006-10-04
申请人： Joon-Sang Park , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Joon-Sang Park , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： C09K13/00 , C03C15/00 , B44C1/22
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： Disclosed is a slurry and method for chemical-mechanical polishing operation. The slurry may contain abrasive particles, an oxidizer, a pH controller, a chelating agent and water. The viscosity of the slurry may be in the range of about 1.0 cP—about 1.05 cP, so that the step difference may be reduced between regions with patterns and without patterns even after completing the chemical-mechanical polishing operation. A permissible rate of depth of focus (DOF) may not need to be controlled in the subsequent photolithography operation, which may enable the subsequent photolithography operation to be conducted by an optical system with relatively low DOF.
摘要翻译：公开了一种用于化学机械抛光操作的浆料和方法。浆料可以含有磨料颗粒，氧化剂，pH控制剂，螯合剂和水。浆料的粘度可以在约1.0cP-约1.05cP的范围内，使得即使在完成化学机械抛光操作之后，也可以在具有图案的区域与无图案的区域之间降低阶梯差。在随后的光刻操作中可能不需要控制焦深（DOF）的允许率，这可以使得随后的光刻操作能够由具有相对低的DOF的光学系统进行。

3. 发明授权

US07097545B2 Polishing pad conditioner and chemical mechanical polishing apparatus having the same 有权
标题翻译：抛光垫调节剂及其化学机械抛光装置
公开(公告)号：US07097545B2
公开(公告)日：2006-08-29
申请号：US10985206
申请日：2004-11-10
申请人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
发明人： Jong-Won Lee , Joon-Sang Park , Chang-Ki Hong
IPC分类号： B24B53/00
CPC分类号： B24B53/017 , B24B53/02
摘要： Chemical mechanical apparatuses including a polishing pad conditioning unit for improving a conditioning rate and wear uniformity of a polishing pad are provided. In one aspect, a chemical mechanical polishing apparatus includes a polishing pad conditioner including conditioning disks disposed in a radial direction of a planarizing surface of a circular polishing pad and contacted with the planarizing surface of the circular polishing pad during rotation of the circular polishing pad. The conditioning disks are connected to first drive units supported by an arm disposed over the circular polishing pad and extended in a radial direction of a planarizing surface of the circular polishing pad. The arm is connected to second drive units. The second drive units move the arm horizontally and reciprocally in the radial direction of the planarizing surface of the circular polishing pad. Thus, a conditioning rate and wear uniformity of the polishing pad may be improved.
摘要翻译：提供了包括用于改善抛光垫的调理率和磨损均匀性的抛光垫调节单元的化学机械设备。在一个方面，一种化学机械抛光装置包括抛光垫调节器，其包括在圆形抛光垫的平坦化表面的径向方向上设置的调节盘，并且在圆形抛光垫的旋转期间与圆形抛光垫的平坦化表面接触。调节盘连接到由设置在圆形抛光垫上的臂支撑的第一驱动单元，并且在圆形抛光垫的平坦化表面的径向方向上延伸。臂连接到第二个驱动单元。第二驱动单元在圆形抛光垫的平坦化表面的径向水平和往复地移动臂。因此，可以提高抛光垫的调理率和磨损均匀性。

4. 发明申请

US20100015729A1 METHODS OF FORMING A THIN FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THE SAME 失效
标题翻译：形成薄膜层的方法和制造包括其的半导体器件的方法
公开(公告)号：US20100015729A1
公开(公告)日：2010-01-21
申请号：US12503440
申请日：2009-07-15
申请人： Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
发明人： Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
IPC分类号： H01L21/28
CPC分类号： H01L27/11507 , H01L21/3105 , H01L21/31053 , H01L28/55
摘要： In methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device, a preliminary ferroelectric layer is formed on a substrate by depositing a metal oxide including lead, zirconium and titanium. The surface of the preliminary ferroelectric layer is polished using a slurry composition including an acrylic acid polymer, abrasive particles, and water to form a thin ferroelectric layer on the substrate. The slurry composition may reduce a polishing rate of the preliminary ferroelectric layer such that removal of a bulk portion of the preliminary ferroelectric layer may be suppressed and the surface roughness of the preliminary ferroelectric layer may be improved.
摘要翻译：在形成薄铁电体层的方法和制造半导体器件的方法中，通过沉积包括铅，锆和钛的金属氧化物，在衬底上形成初步铁电层。使用包括丙烯酸聚合物，磨料颗粒和水的浆料组合物对预制铁电层的表面进行抛光，以在基材上形成薄铁电层。浆料组合物可以降低预备铁电体层的抛光速率，从而可以抑制初级铁电层的体积部分的去除，并且可以提高预铁电层的表面粗糙度。

5. 发明申请

US20070264793A1 Methods of Manufacturing Semiconductor Memory Devices with Unit Cells Having Charge Trapping Layers 失效
标题翻译：制造具有电荷陷阱层的单元电池的半导体存储器件的方法
公开(公告)号：US20070264793A1
公开(公告)日：2007-11-15
申请号：US11746761
申请日：2007-05-10
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwam Shim , Jong-Won Lee
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwam Shim , Jong-Won Lee
IPC分类号： H01L21/76
CPC分类号： H01L27/115 , H01L21/76229 , H01L27/11568
摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.
摘要翻译：在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。形成从衬底突出的隔离层以填充沟槽。在基板上形成第一层之后，在第一层上形成预备的第二层图案。预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。在初步第二层和隔离层上形成第三层。在第三层上形成第四层。部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

6. 发明授权

US08084344B2 Methods of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08084344B2
公开(公告)日：2011-12-27
申请号：US12292195
申请日：2008-11-13
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/76897 , H01L27/10855 , H01L27/10873 , H01L27/10888 , H01L29/6653
摘要： A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.
摘要翻译：提供了制造半导体器件的接触插塞的方法，该方法包括在衬底上形成栅极图案，形成覆盖图案的上表面和侧壁的封盖图案，在衬底上形成层间绝缘层，如层间绝缘层暴露封盖图案的上表面，并且去除封盖图案和层间绝缘层的一部分，使得封盖图案的上表面被平坦化。

7. 发明授权

US07498217B2 Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers 失效
标题翻译：制造具有电荷捕获层的单元电池的半导体存储器件的方法
公开(公告)号：US07498217B2
公开(公告)日：2009-03-03
申请号：US11746761
申请日：2007-05-10
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwan Shim , Jong-Won Lee
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwan Shim , Jong-Won Lee
IPC分类号： H01L21/8238 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/115 , H01L21/76229 , H01L27/11568
摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.
摘要翻译：在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。形成从衬底突出的隔离层以填充沟槽。在基板上形成第一层之后，在第一层上形成预备的第二层图案。预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。在初步第二层和隔离层上形成第三层。在第三层上形成第四层。部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

8. 发明申请

US20090155991A1 Methods of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090155991A1
公开(公告)日：2009-06-18
申请号：US12292195
申请日：2008-11-13
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/76897 , H01L27/10855 , H01L27/10873 , H01L27/10888 , H01L29/6653
摘要： A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.
摘要翻译：提供了制造半导体器件的接触插塞的方法，该方法包括在衬底上形成栅极图案，形成覆盖图案的上表面和侧壁的封盖图案，在衬底上形成层间绝缘层，如层间绝缘层暴露封盖图案的上表面，并且去除封盖图案和层间绝缘层的一部分，使得封盖图案的上表面被平坦化。

9. 发明授权

US08048808B2 Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same 有权
标题翻译：用于抛光金属的浆料组合物，抛光金属物体的方法和使用其形成金属布线的方法
公开(公告)号：US08048808B2
公开(公告)日：2011-11-01
申请号：US12213941
申请日：2008-06-26
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： H01L21/302
CPC分类号： C23F3/00 , C09G1/02
摘要： A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO3−) and a sulfate ion (OSO3−), and an acidic aqueous solution.
摘要翻译：用于抛光金属的浆料组合物包括聚合物抛光促进剂，所述聚合物抛光促进剂包括烃的主链和具有磺酸根离子（SO 3 - ）和硫酸根离子（OSO 3 - ）中的至少一种的侧取代基，酸性水溶液。

10. 发明授权

US08043970B2 Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same 有权
标题翻译：用于相对于氧化硅选择性研磨氮化硅的浆料组合物，抛光氮化硅层的方法和使用其制造半导体器件的方法
公开(公告)号：US08043970B2
公开(公告)日：2011-10-25
申请号：US12167781
申请日：2008-07-03
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： H01L21/302 , H01L21/461 , B24D3/02 , C09C1/68
CPC分类号： H01L21/31053 , C09G1/02 , H01L29/66583 , H01L29/66795 , H01L29/7851
摘要： Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.
摘要翻译：提供了相对于氧化硅选择性研磨氮化硅的浆料组合物，研磨氮化硅层的方法和使用其制造半导体器件的方法。浆料组合物包括用于降低氧化物抛光速率的第一试剂，磨料颗粒和水，并且第一试剂包括聚（丙烯酸）。浆料组合物可以具有相对于氧化硅的氮化硅相对于在半导体制造工艺中选择性研磨氮化硅层的高抛光选择性。

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