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91. 发明申请

US20060124468A1 Contact plating apparatus 审中-公开
标题翻译：接触电镀设备
公开(公告)号：US20060124468A1
公开(公告)日：2006-06-15
申请号：US11345011
申请日：2006-02-01
申请人： Nicolay Kovarsky , Michael Yang , Dmitry Lubomirsky
发明人： Nicolay Kovarsky , Michael Yang , Dmitry Lubomirsky
IPC分类号： C25D7/12
CPC分类号： H01L21/2885 , C25D17/001
摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.
摘要翻译：本发明的实施例通常提供一种基板处理系统和方法。衬底处理系统通常包括配置成在其中容纳电镀液的流体池，位于流体池的下部的阳极组件，位于阳极组件上方的横跨流体池的隔离膜，跨过流体定位的扩散构件在分离膜之上的盆地，以及位于扩散构件上方的横跨流体池的镀膜。电镀方法通常包括将衬底浸入电镀溶液中，镀敷溶液含有待镀覆的金属离子，与半导体衬底的电镀表面接触镀覆膜，向半导体衬底施加电镀偏压以将金属离子所述电镀液位于所述基板的电镀面附近，除去所述电镀表面与所述镀膜接触预定的时间，并且将所述电镀表面与所述电镀膜重新接触以继续将所述金属离子电镀到所述电镀表面上。

92. 发明授权

US07025861B2 Contact plating apparatus 失效
公开(公告)号：US07025861B2
公开(公告)日：2006-04-11
申请号：US10360234
申请日：2003-02-06
申请人： Nicolay Kovarsky , Michael Yang , Dmitry Lubomirsky
发明人： Nicolay Kovarsky , Michael Yang , Dmitry Lubomirsky
IPC分类号： C25F3/30 , B23H5/06 , C25D7/12 , C25D5/22
CPC分类号： H01L21/2885 , C25D17/001
摘要： Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.

93. 发明申请

US20060062897A1 Patterned wafer thickness detection system 审中-公开
标题翻译：图案化晶圆厚度检测系统
公开(公告)号：US20060062897A1
公开(公告)日：2006-03-23
申请号：US11034349
申请日：2005-01-11
申请人： Yuping Gu , Manoocher Birang , Arulkumar Shanmugasundram , Dmitry Lubomirsky , Joseph Stevens
发明人： Yuping Gu , Manoocher Birang , Arulkumar Shanmugasundram , Dmitry Lubomirsky , Joseph Stevens
IPC分类号： B05D3/12
CPC分类号： G01B11/0683 , C23C18/1632 , C23C18/1675 , G01N21/55 , G01N21/9501
摘要： An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate is provided. In one embodiment, the detected end of an electroless deposition process step is measured while the substrate is rotated relative to the detection mechanism. In another embodiment, a detection mechanism, which is proximate to the processing region, directs electromagnetic radiation onto a substrate surface, which is then reflected by features on the substrate surface and is detected by the detection mechanism. In one aspect, the angle of the directed electromagnetic radiation is perpendicular to the surface of the substrate and the shape of the directed electromagnetic radiation spot is substantially circular in shape. In another aspect, the directed electromagnetic radiation spot is positioned at the center of rotation of the substrate. A controller can be used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.
摘要翻译：提供了一种通过将电磁辐射引导到衬底的表面并检测在衬底的表面上被反射的特征的一个或多个波长处的电磁辐射的强度变化来控制无电沉积工艺的装置和方法。在一个实施例中，在基板相对于检测机构旋转的同时测量无电沉积工艺步骤的检测结束。在另一个实施例中，靠近处理区域的检测机构将电磁辐射引导到衬底表面上，然后其被衬底表面上的特征反射并被检测机构检测。一方面，定向电磁辐射的角度垂直于衬底的表面，并且定向电磁辐射光斑的形状基本上是圆形的。在另一方面，定向电磁辐射光斑位于基底的旋转中心。控制器可用于通过使用存储的过程值，不同时间收集的数据的比较和各种计算的时间相关数据来监测，存储和/或控制无电沉积过程。

94. 发明申请

US20050217586A1 Lift pin alignment and operation methods and apparatus 审中-公开
公开(公告)号：US20050217586A1
公开(公告)日：2005-10-06
申请号：US11146687
申请日：2005-06-06
申请人： Dmitry Lubomirsky , Sheshraj Tulshibagwale , Donald Olgado , Avi Tepman
发明人： Dmitry Lubomirsky , Sheshraj Tulshibagwale , Donald Olgado , Avi Tepman
IPC分类号： H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68742 , Y10S414/135
摘要： A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.

95. 发明授权

US06802947B2 Apparatus and method for electro chemical plating using backside electrical contacts 失效
标题翻译：使用背面电触点进行电化学镀的装置和方法
公开(公告)号：US06802947B2
公开(公告)日：2004-10-12
申请号：US09981191
申请日：2001-10-16
申请人： Donald J. K. Olgado , Michael Wood , Dmitry Lubomirsky
发明人： Donald J. K. Olgado , Michael Wood , Dmitry Lubomirsky
IPC分类号： C25D1700
CPC分类号： C25D7/123 , C25D5/028 , C25D17/001 , C25D17/06 , H01L21/2885
摘要： An apparatus and method for securing and electrically contacting a substrate on a non-production surface of the substrate. The apparatus includes a substrate holder assembly having a substrate engaging surface formed thereon, the substrate engaging surface being configured to engage a substrate on the non-production surface. The apparatus further includes an electrical contact device positioned on the substrate engaging surface, the electrical contact device including a plurality of radially spaced electrically conductive members configured to electrically communicate with the non-production surface of the substrate positioned on the substrate engaging surface. The method includes depositing a conductive seed layer on a production surface of the substrate, and depositing a backside conductive layer on a portion of the non-production side of the substrate, the backside conductive layer extending around a bevel of the substrate to electrically communicate with the seed layer. The method further includes securing the substrate in a chuck configured to engage the non-production surface of the substrate, contacting the backside conductive layer with an electrical cathode contact on the non-production side of the substrate, and plating over the conductive seed layer via application of an electrolyte to the production surface of the substrate and applying an electrical bias to the electrical cathode contact and an anode in communication with the electrolyte.
摘要翻译：一种用于固定和电接触衬底的非生产表面上的衬底的装置和方法。该设备包括具有形成在其上的衬底接合表面的衬底保持器组件，衬底接合表面被配置为接合非生产表面上的衬底。所述装置还包括位于所述基板接合表面上的电接触装置，所述电接触装置包括多个径向隔开的导电构件，所述导电构件构造成与位于所述基板接合表面上的所述基板的非生产表面电连通。该方法包括在衬底的生产表面上沉积导电种子层，以及在衬底的非生产侧的一部分上沉积背面导电层，所述背面导电层围绕衬底的斜面延伸以与种子层。该方法还包括将衬底固定在配置成接合衬底的非生产表面的卡盘中，使背面导电层与衬底的非生产侧上的电阴极接触接触，并且在导电种子层上电镀将电解质施加到基材的生产表面上，并将电偏压施加到电阴极接触件和与电解质连通的阳极。

96. 发明授权

US06673199B1 Shaping a plasma with a magnetic field to control etch rate uniformity 失效
标题翻译：用磁场成形等离子体，以控制蚀刻速率均匀性
公开(公告)号：US06673199B1
公开(公告)日：2004-01-06
申请号：US09800876
申请日：2001-03-07
申请人： John M. Yamartino , Peter K. Loewenhardt , Dmitry Lubomirsky , Saravjeet Singh
发明人： John M. Yamartino , Peter K. Loewenhardt , Dmitry Lubomirsky , Saravjeet Singh
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/3266
摘要： A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnetic field generator disposed about the chamber has first and second solenoids. A controller is adapted to control a power supply to provide a first current to the first solenoid and a second current to the second solenoid, thereby generating a magnetic field in the process zone of the chamber to controllably shape the plasma in the process zone to reduce etch rate variations across the substrate.
摘要翻译：衬底蚀刻室具有衬底支撑件，用于将工艺气体引入腔室中的气体供应源; 电感天线，用于维持室的处理区中的处理气体的等离子体，以及排气以排出处理气体。设置在室周围的磁场发生器具有第一和第二螺线管。控制器适于控制电源以向第一螺线管提供第一电流，并将第二电流提供给第二螺线管，从而在腔室的过程区域中产生磁场，以可控地成形处理区域中的等离子体，以减少衬底上的蚀刻速率变化。

97. 发明授权

US06466426B1 Method and apparatus for thermal control of a semiconductor substrate 失效
标题翻译：用于半导体衬底的热控制的方法和装置
公开(公告)号：US06466426B1
公开(公告)日：2002-10-15
申请号：US09366155
申请日：1999-08-03
申请人： Yeuk-Fai Edwin Mok , Dmitry Lubomirsky , Dennis Koosau , Danny Wang , Senh Thach , Paul Exline
发明人： Yeuk-Fai Edwin Mok , Dmitry Lubomirsky , Dennis Koosau , Danny Wang , Senh Thach , Paul Exline
IPC分类号： H01N1300
CPC分类号： H01L21/68785 , H01L21/67098 , Y10T279/23
摘要： A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.
摘要翻译：更具体地说，一种具有衬底支撑件，隔离器以及用于在半导体晶片的直径上提供可控均匀的温度分布的第一和第二传热板的半导体衬底支撑座。将放置在基座上的半导体晶片通过用嵌入在基板支撑体内的一个或多个电极加热晶片并以流过第一和第二传热板的流体冷却晶片来均匀地保持在预定温度。

98. 发明申请

US20170250060A1 PLASMA PROCESSING SYSTEM WORKPIECE CARRIER WITH THERMALLY ISOLATED HEATER PLATE BLOCKS 审中-公开
公开(公告)号：US20170250060A1
公开(公告)日：2017-08-31
申请号：US15594297
申请日：2017-05-12
申请人： Dmitry Lubomirsky , Son T. Nguyen , Anh N. Nguyen , David Palagashvili
发明人： Dmitry Lubomirsky , Son T. Nguyen , Anh N. Nguyen , David Palagashvili
IPC分类号： H01J37/32 , H01L21/687 , H01L21/67
CPC分类号： H01J37/32724 , H01J37/32082 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要： A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

99. 发明授权

US09202736B2 Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing 有权
公开(公告)号：US09202736B2
公开(公告)日：2015-12-01
申请号：US11888341
申请日：2007-07-31
申请人： Kadthala Ramaya Narendrnath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Kadthala Ramaya Narendrnath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： B23P6/00 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , B23P6/00 , H02N13/00
摘要： A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.

100. 发明授权

US08940642B2 Method of multiple patterning of a low-K dielectric film 有权
标题翻译：低K电介质膜的多次图案化方法
公开(公告)号：US08940642B2
公开(公告)日：2015-01-27
申请号：US13187304
申请日：2011-07-20
申请人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
发明人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
IPC分类号： H01L21/311 , H01L21/3105 , H01L21/768 , H01L21/02
CPC分类号： H01L21/31116 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76826
摘要： Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. A second mask layer is formed and patterned above the first mask layer. A pattern of the second mask layer is transferred at least partially into the low-k dielectric layer by modifying first exposed portions of the low-k dielectric layer with a first plasma process and removing the modified portions of the low-k dielectric layer. Subsequently, a pattern of the first mask layer is transferred at least partially into the low-k dielectric layer by modifying second exposed portions of the low-k dielectric layer with a second plasma process and removing the modified portions of the low-k dielectric layer.
摘要翻译：描述了低k电介质膜的多次图案化方法。例如，一种方法包括在低k电介质层上形成和图案化第一掩模层，低k电介质层设置在衬底之上。第二掩模层在第一掩模层之上形成并图案化。通过用第一等离子体处理修改低k电介质层的第一暴露部分并去除低k电介质层的修改部分，将第二掩模层的图案至少部分地转移到低k电介质层中。随后，通过用第二等离子体处理修改低k电介质层的第二暴露部分，将第一掩模层的图案至少部分地转移到低k电介质层中，并且去除低k电介质层的修饰部分。

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