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1. 发明申请

US20130156937A1 System and Method for Aligning Sputter Sources 审中-公开
标题翻译：用于调整溅射源的系统和方法
公开(公告)号：US20130156937A1
公开(公告)日：2013-06-20
申请号：US13328530
申请日：2011-12-16
申请人： Danny Wang , Kent Riley Child , Owen Ho Yin Fong
发明人： Danny Wang , Kent Riley Child , Owen Ho Yin Fong
IPC分类号： C23C16/52 , B05C11/00
CPC分类号： C23C14/54 , C23C14/3407 , C23C14/352 , H01J37/34
摘要： Embodiments provided herein describe systems and methods for aligning sputtering sources, such as in a substrate processing tool. The substrate processing tool includes at least one sputtering source and a device. Each of sputtering sources includes a target having a central axis. The device has an axis and is detachably coupled to the at least one sputtering source. The device indicates to a user a direction in which the central axis of the target of the at least one sputtering source is oriented.
摘要翻译：本文提供的实施例描述了用于对准溅射源的系统和方法，例如在基板处理工具中。基板处理工具包括至少一个溅射源和装置。每个溅射源包括具有中心轴的靶。该装置具有轴线并且可拆卸地联接至该至少一个溅射源。该装置向使用者指示至少一个溅射源的靶的中心轴定向的方向。

2. 发明申请

US20130153536A1 COMBINATORIAL PROCESSING USING A REMOTE PLASMA SOURCE 审中-公开
标题翻译：使用远程等离子体源的组合处理
公开(公告)号：US20130153536A1
公开(公告)日：2013-06-20
申请号：US13328129
申请日：2011-12-16
申请人： ShouQian Shao , Kent Riley Child , Danny Wang
发明人： ShouQian Shao , Kent Riley Child , Danny Wang
IPC分类号： B44C1/22 , H05H1/24 , B08B5/00 , C23C16/50
CPC分类号： C23C16/042 , C23C16/452 , C23C16/50 , H05H1/54
摘要： Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.
摘要翻译：公开了使用远程等离子体源进行组合处理的方法和装置。该装置包括远程等离子体源和封闭衬底支撑件的内室。孔可操作以提供等离子体暴露于衬底上的位置隔离区域。运输系统移动衬底支撑件并且能够定位衬底，使得位置隔离区域可以位于衬底上的任何地方。障碍物和气体净化系统用于提供场地隔离。等离子体曝光参数可以以组合方式变化。这些参数包括等离子体发生器的源气体，等离子体过滤参数，曝光时间，气体流速，频率，等离子体发生器功率，等离子体产生方法，室压力，衬底温度，等离子体源和衬底之间的距离，衬底偏置电压或组合其中。

3. 发明授权

US06537011B1 Method and apparatus for transferring and supporting a substrate 失效
标题翻译：用于转移和支撑衬底的方法和装置
公开(公告)号：US06537011B1
公开(公告)日：2003-03-25
申请号：US09629322
申请日：2000-07-31
申请人： Danny Wang , Dmitry Lubomirsky , Erwin Polar , Brigitte Stoehr , Mark Wiltse , Yeuk-Fai Edwin Mok , Frank C. Ma
发明人： Danny Wang , Dmitry Lubomirsky , Erwin Polar , Brigitte Stoehr , Mark Wiltse , Yeuk-Fai Edwin Mok , Frank C. Ma
IPC分类号： B65G4907
CPC分类号： H01L21/68707 , H01L21/68721 , H01L21/68785 , Y10S414/141
摘要： A method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system. In one aspect, a support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed. In another aspect, a substrate handler blade having a plurality of substrate supports disposed thereon is provided which is adapted to support a substrate thereon and effectuate substrate transfer between the substrate handler blade and the support ring.
摘要翻译：一种用于在半导体晶片处理系统中支撑和传送衬底的方法和装置。在一个方面，公开了一种支撑环，其具有安装在其上的一个或多个基板支撑构件并且在处理期间限定用于接收基板支撑构件的中心开口。在另一方面，提供一种其上设置有多个基板支撑件的基板处理器刀片，其适于在其上支撑基板并且实现基板处理器刀片和支撑环之间的基板传送。

4. 发明申请

US20130153149A1 Substrate Processing Tool with Tunable Fluid Flow 审中-公开
标题翻译：具有可调流体流动的基板加工工具
公开(公告)号：US20130153149A1
公开(公告)日：2013-06-20
申请号：US13331011
申请日：2011-12-20
申请人： Danny Wang , Kent Riley Child , James Tsung , Hong Sheng Yang
发明人： Danny Wang , Kent Riley Child , James Tsung , Hong Sheng Yang
IPC分类号： C23F1/08 , F17D3/00 , C23C16/458
CPC分类号： C23C16/4585 , H01L21/6719 , H01L21/68735 , Y10T137/0318
摘要： Embodiments provided herein describe substrate processing tools. The substrate processing tools include a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. The substrate has a central axis. A first annular member is moveably coupled to the housing and positioned within the processing chamber. The first annular member circumscribes the central axis of the substrate. A second annular member is moveably coupled to the housing and positioned within the processing chamber. The second annular member circumscribes the central axis of the substrate. Movement of the first annular member and the second annular member relative to the housing changes a flow of processing fluid through the processing chamber.
摘要翻译：本文提供的实施例描述了衬底处理工具。衬底处理工具包括限定处理室的壳体。衬底支撑件联接到壳体并且构造成支撑处理室内的衬底。基板具有中心轴。第一环形构件可移动地联接到壳体并且定位在处理室内。第一环形构件围绕衬底的中心轴线。第二环形构件可移动地联接到壳体并且定位在处理室内。第二环形构件围绕基板的中心轴线。第一环形构件和第二环形构件相对于壳体的移动改变处理流体通过处理室的流动。

5. 发明授权

US06466426B1 Method and apparatus for thermal control of a semiconductor substrate 失效
标题翻译：用于半导体衬底的热控制的方法和装置
公开(公告)号：US06466426B1
公开(公告)日：2002-10-15
申请号：US09366155
申请日：1999-08-03
申请人： Yeuk-Fai Edwin Mok , Dmitry Lubomirsky , Dennis Koosau , Danny Wang , Senh Thach , Paul Exline
发明人： Yeuk-Fai Edwin Mok , Dmitry Lubomirsky , Dennis Koosau , Danny Wang , Senh Thach , Paul Exline
IPC分类号： H01N1300
CPC分类号： H01L21/68785 , H01L21/67098 , Y10T279/23
摘要： A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.
摘要翻译：更具体地说，一种具有衬底支撑件，隔离器以及用于在半导体晶片的直径上提供可控均匀的温度分布的第一和第二传热板的半导体衬底支撑座。将放置在基座上的半导体晶片通过用嵌入在基板支撑体内的一个或多个电极加热晶片并以流过第一和第二传热板的流体冷却晶片来均匀地保持在预定温度。

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