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    • 91. 发明申请
    • Optical Transmitter and Optical OFDM Communication System
    • 光发射机和光OFDM通信系统
    • US20110249978A1
    • 2011-10-13
    • US13140355
    • 2009-12-18
    • Shinya Sasaki
    • Shinya Sasaki
    • H04B10/04H04B10/00
    • H04J14/02H04B10/548H04L25/03343H04L25/03821H04L27/2626H04L27/2697
    • Distortion of a reception signal which is attributable to interference between subcarriers during photoelectric conversion is reduced in an optical OFDM communication system without broadening the signal band. A transmission signal processing unit (100) in a transmitter is provided with a distortion generating circuit (distortion generating unit) (170). A subcarrier signal is utilized as an input signal for the circuit. The distortion generating circuit (170) generates a baseband OFDM signal by means of inverse FFT calculation using the input signal, computes the square of the absolute value of the signal, and restores the subcarrier signal by mean of FFT calculation. Because interference between subcarriers is also included in the signal, the distortion element generated by the interference between the subcarriers can be extracted when the difference from the input signal is found. The signal obtained by subtracting the distortion element from the subcarrier signal, which has been modulated using the original data to be communicated, is used as the transmission signal. The transmission signal is photoelectrically converted with a receiver. The interference between subcarriers generated at this time is smaller than when the aforementioned processing is not performed.
    • 在光OFDM通信系统中减少归因于光电转换期间子载波之间的干扰的接收信号的失真,而不会使信号带宽扩大。 发射机中的发射信号处理单元(100)设置有失真发生电路(失真发生单元)(170)。 副载波信号用作电路的输入信号。 失真发生电路(170)通过使用输入信号的逆FFT计算生成基带OFDM信号,计算信号的绝对值的平方,并且通过FFT计算来恢复副载波信号。 由于子载波之间的干扰也包含在信号中,所以当与输入信号的差异被发现时,可以提取由子载波之间的干扰产生的失真元件。 使用通过使用要传送的原始数据进行了调制的副载波信号中减去失真元件而获得的信号被用作发送信号。 传输信号用接收机进行光电转换。 此时生成的副载波之间的干扰小于不执行上述处理时的干扰。
    • 95. 发明授权
    • Method for manufacturing semiconductor device background
    • 制造半导体器件背景的方法
    • US07662727B2
    • 2010-02-16
    • US11979707
    • 2007-11-07
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • H01L21/31H01L21/469
    • H01L21/31645C23C16/405C23C16/45553H01L21/02181H01L21/0228H01L21/3141H01L21/31641
    • To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
    • 在通过将原料和醇交替地流动到处理室来形成薄膜的方法中,为了提高台阶覆盖率和装载效果,不会引起生产量的恶化和成本的增加。 该方法包括:将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环,首先清洗,供给原料和第二次清洗,并通过重复该循环规定次数,在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。
    • 96. 发明申请
    • CONTROL METHOD FOR OPTICAL PHASE MODULATION
    • 光相调制控制方法
    • US20080181620A1
    • 2008-07-31
    • US11776859
    • 2007-07-12
    • Shinya Sasaki
    • Shinya Sasaki
    • H04B10/04
    • H04B10/5053H04B10/5561
    • A QPSK modulator comprising: two phase modulators implemented in parallel for outputting the light phase-modulated with an information signal; a phase shifter for shifting the phase of the light phase-modulated with the first phase modulator of the two phase modulators and for outputting the phase-shifted light; and a combiner for combining output light of the phase shifter and output light of the second phase modulator, in which a drive signal generated by multiplexing a signal of a first and second frequencies and the information signal is inputted into the first and second phase modulators, and in which the QPSK modulator feeds back a detected amount to a voltage applied to the phase shifter so that the phase shift amount may be π/2, the detected amount of signals having the frequency of the difference between or the sum of the first and second frequency which are extracted from the modulated light.
    • 一种QPSK调制器,包括:并行实现的两个相位调制器,用于输出具有信息信号的相位调制的光; 移相器,用于使用两相调制器的第一相位调制器相位调制的光的相位偏移并输出相移的光; 以及组合器,用于组合移相器的输出光和第二相位调制器的输出光,其中通过将第一和第二频率的信号复用而产生的驱动信号和信息信号被输入到第一和第二相位调制器中, 并且其中QPSK调制器将检测到的量反馈到施加到移相器的电压,使得相移量可以是pi / 2,检测到的具有频率差的信号或第一和第 从调制光提取的第二频率。
    • 97. 发明申请
    • Substrate processing apparatus
    • 基板加工装置
    • US20080166886A1
    • 2008-07-10
    • US11902035
    • 2007-09-18
    • Masanori SakaiNorikazu MizunoShinya SasakiHirohisa Yamazaki
    • Masanori SakaiNorikazu MizunoShinya SasakiHirohisa Yamazaki
    • H01L21/31C23C16/00
    • C23C16/45578C23C16/45546C23C16/45548C23C16/54H01L21/02181H01L21/0228H01L21/3141H01L21/31645
    • There is provided a substrate processing apparatus, comprising: a processing chamber that houses a plurality of substrates in a state of being stacked; a heating member that heats the substrate and an atmosphere in the processing chamber; a first gas supply member that supplies a source gas that thermally-decomposes; a second gas supply member that supplies oxidative gas; an exhaust member that exhausts the atmosphere in the processing chamber; and a controller that controls at least the first gas supply member, the second gas supply member, and the exhaust member. The first gas supply member further includes at least one inlet opening that introduces the source gas into the processing chamber; the first inlet opening opens so as to avoid the side of the substrate; the second gas supply member further includes at least one second inlet opening that introduces the oxidative gas into the processing chamber; the second inlet opening opens to the side of the substrate; and the controller controls the first and second gas supply members and the exhaust member, so that the source gas and the oxidative gas are alternately supplied and exhausted to the processing chamber, to form a desired film on the substrate.
    • 提供了一种基板处理装置,包括:处理室,其以堆叠的状态容纳多个基板; 加热构件,其加热所述基板和所述处理室中的气氛; 提供热分解的源气体的第一气体供给构件; 供给氧化气体的第二气体供给部件; 排气构件,其排出处理室中的气氛; 以及至少控制第一气体供给构件,第二气体供给构件和排气构件的控制器。 第一供气构件还包括将源气体引入处理室的至少一个入口; 第一入口开口打开以避免衬底的侧面; 第二气体供给构件还包括将氧化气体引入处理室的至少一个第二入口; 第二入口开口通向基板的侧面; 并且控制器控制第一和第二气体供给构件和排气构件,使得源气体和氧化气体被交替地供给并排出到处理室,以在基板上形成期望的膜。
    • 98. 发明申请
    • Method for manufacturing semiconductor device background
    • 制造半导体器件背景的方法
    • US20080132084A1
    • 2008-06-05
    • US11979707
    • 2007-11-07
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • Hironobu MiyaNorikazu MizunoMasanori SakaiShinya SasakiHirohisa Yamazaki
    • H01L21/316B05C11/00
    • H01L21/31645C23C16/405C23C16/45553H01L21/02181H01L21/0228H01L21/3141H01L21/31641
    • To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.
    • 在通过将原料和醇交替地流动到处理室来形成薄膜的方法中,为了提高台阶覆盖率和装载效果,不会引起生产量的恶化和成本的增加。 该方法包括:将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环,首先清洗,供给原料和第二次清洗,并通过重复该循环规定次数,在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。