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91. 发明申请

US20060147169A1 Optical device and method of manufacturing the same 失效
标题翻译：光学装置及其制造方法
公开(公告)号：US20060147169A1
公开(公告)日：2006-07-06
申请号：US10545157
申请日：2004-08-27
申请人： Mitsuro Sugita , Takao Yonehara
发明人： Mitsuro Sugita , Takao Yonehara
IPC分类号： G02B6/10 , C03B37/023 , C03B37/022
CPC分类号： G01N21/774 , B82Y20/00 , G01N21/7746 , G02B6/1225 , G02B6/1228 , G02B6/125 , G02B6/131 , G02B2006/12176
摘要： An optical device comprising a substrate, a porous layer laid on the substrate having a pore diameter smaller than the wavelength of light and a crystal layer laid on the porous layer showing a refractive index greater than that of the porous layer is presented. The optical device is manufactured by a method comprising a step of forming a porous layer having a pore diameter smaller than the wavelength of light on the surface of a substrate and a step of forming a crystal layer showing a refractive index greater than that of the porous layer on the porous layer. Since the porous layer is clad, light can be confined with ease.
摘要翻译：提供了一种光学装置，其包括基底，放置在基底上的孔径小于光波长的多孔层和放置在多孔层上的结晶层，其折射率大于多孔层的折射率。该光学器件通过包括形成孔径小于衬底表面上的光的波长的多孔层的步骤的方法制造，并且形成表现出比多孔层的折射率更大的折射率的晶体层的步骤在多孔层上。由于多孔层被包覆，所以可以容易地限制光。

92. 发明申请

US20050148122A1 Substrate, manufacturing method therefor, and semiconductor device 失效
标题翻译：基板，其制造方法和半导体器件
公开(公告)号：US20050148122A1
公开(公告)日：2005-07-07
申请号：US11039845
申请日：2005-01-24
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/02 , H01L21/20 , H01L21/762 , H01L27/12 , H01L21/00 , H01L21/30
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation layer are performed, thereby obtaining a substrate with a GOI structure.
摘要翻译：在分离层上形成具有分离层和Ge层的第一衬底的步骤，以及通过绝缘层将第一衬底粘合到第二衬底上而形成键合衬底叠层的步骤，以及将第进行分离层的键合衬底叠层，从而获得具有GOI结构的衬底。

93. 发明授权

US06706618B2 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method 失效
标题翻译：基板处理装置，基板支撑装置，基板处理方法以及基板的制造方法
公开(公告)号：US06706618B2
公开(公告)日：2004-03-16
申请号：US10206214
申请日：2002-07-29
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： H01L2176
CPC分类号： H01L21/67092 , H01L21/2007
摘要： The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.
摘要翻译：吸盘槽3a和3b中的空间被抽真空以将晶片1的整个表面吸附到晶片支撑台3的卡盘表面并使晶片1弯曲。晶片2与晶片1水平相对，晶片2被压销6a按压。两个晶片1和2的中心接触，并且接触部分逐渐扩展到中心部分3c的周边附近并呈现大致圆形。之后，由卡盘槽3a卡住停止。因此，晶片1变平，晶片1和2的整个表面接触。

94. 发明授权

US06326279B1 Process for producing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US06326279B1
公开(公告)日：2001-12-04
申请号：US09532079
申请日：2000-03-21
申请人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
发明人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n≧2) the thickness of the porous semiconductor layer.
摘要翻译：为了减少步骤数量并降低制造高质量SOI衬底的成本，制造半导体产品的方法包括以下步骤：在第一衬底的至少一个表面上形成多孔半导体层，形成无孔在多孔半导体层上形成单晶半导体层，将第一衬底与第二衬底接合，使前者的无孔单晶半导体层面向后面的非多孔单晶半导体层接触，形成接合结构，并将接合结构分为多孔半导体层，其中所述工艺还包括以下步骤：在所述第一衬底的所述一个表面上形成厚度至少为所述多孔半导体层的厚度的n倍（n≥2）的厚度的外延硅层。

95. 发明授权

US5755914A Method for bonding semiconductor substrates 失效
标题翻译：半导体衬底接合方法
公开(公告)号：US5755914A
公开(公告)日：1998-05-26
申请号：US675844
申请日：1996-07-05
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/02 , H01L21/20 , H01L27/12
CPC分类号： H01L21/2007 , H01L2224/83894 , Y10S148/012 , Y10S148/135
摘要： A semiconductor substrate comprises a plurality of substrates to be bonded, wherein a bond promotion layer into which silicon atoms are implanted is provided in an interface between the substrates to be bonded, and the substrates are bonded to each other with the interposition of the bond promotion layer.
摘要翻译：半导体衬底包括多个待接合的衬底，其中在待结合的衬底之间的界面中提供注入有硅原子的键促进层，并且通过插入键促进来将衬底彼此接合层。\！

96. 发明授权

US5463975A Process for producing crystal 失效
标题翻译：水晶生产工艺
公开(公告)号：US5463975A
公开(公告)日：1995-11-07
申请号：US90626
申请日：1993-07-12
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： C30B25/00 , C30B23/02 , C30B25/02 , C30B25/10 , C30B25/18 , C30B33/00 , C30B33/02 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/84 , H01L27/12 , C30B1/08
CPC分类号： C30B25/18 , C30B23/02 , C30B25/02 , C30B25/105 , H01L21/0237 , H01L21/02532 , H01L21/02639 , H01L21/02647
摘要： A process for producing a crystal comprises the step of applying crystal forming treatment on a light-transmissive substrate having a non-nucleation surface (S.sub.NDS) of a small nucleation density and a nucleation surface (S.sub.NDL) of a nucleation density (ND.sub.L) greater than the nucleation density (N.sub.DS) of said non-nucleation surface (S.sub.NDS) and formed of an amorphous material (M.sub.L) different from the material (M.sub.S) forming the non-nucleation surface (S.sub.NDS) at a small area sufficient to effect crystal growth from only a single nucleus to form a single crystal nucleus on the nucleation surface (S.sub.NDL), thereby growing a single crystal from the single nucleus, and the step of reducing the crystal defects of the crystal in the vicinity of the interface with the substrate by irradiation of light from the side of the substrate.
摘要翻译：制造晶体的方法包括以下步骤：对具有小成核密度的非成核面（SNDS）和成核密度（NDL）的成核面（SNDL）的透光性基板进行结晶化处理，所述非成核表面（SNDS）的成核密度（NDS）由不同于形成非成核表面（SNDS）的材料（MS）的非晶材料（ML）形成，并且在不足以实现晶体生长的小面积上形成仅在核成核面（SNDL）上形成单晶核，由此从单个核生长单晶，以及通过照射降低与基板界面附近的晶体的晶体缺陷的步骤的光从基板的一侧。

97. 发明授权

US5201681A Method of emitting electrons 失效
标题翻译：发射电子的方法
公开(公告)号：US5201681A
公开(公告)日：1993-04-13
申请号：US848727
申请日：1992-03-09
申请人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
发明人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J31/12
CPC分类号： H01J9/025 , H01J1/3042 , H01J3/022 , H01J31/127 , H01J2201/30446
摘要： A method of emitting electrons by applying a voltage between a voltage application electrode and a target to be irradiated with the electrons emitted from an electron emission electrode with a conical portion in an electron emission device. The voltage application electrode is formed to oppose the electron emission electrode so as to sandwich an insulating layer therebetween and the target. A charge of the electron emission electrode which is lost by electron emission during an electron emission operation is supplied after the electron emission operation is completed.
摘要翻译：通过在电子发射装置中通过在电压施加电极和被电子发射电子发射的电子与电子发射电极发射的锥形部分之间施加电压来照射电子的方法。电压施加电极形成为与电子发射电极相对以在其间夹有绝缘层和靶。在电子发射操作完成之后，供给在电子发射操作期间被电子发射损失的电子发射电极的电荷。

98. 发明授权

US4999313A Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material 失效
标题翻译：使用无定形种子制备半导体制品来生长单晶半导体材料
公开(公告)号：US4999313A
公开(公告)日：1991-03-12
申请号：US528916
申请日：1990-05-29
申请人： Shiro Arikawa , Takao Yonehara
发明人： Shiro Arikawa , Takao Yonehara
IPC分类号： H01L21/20 , H01L21/761 , H01L21/762
CPC分类号： H01L21/02381 , H01L21/0237 , H01L21/0242 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , H01L21/761 , H01L21/762 , Y10S117/913 , Y10S148/15 , Y10S148/152 , Y10S257/928
摘要： There is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate. At least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.

99. 发明授权

US08999058B2 High-productivity porous semiconductor manufacturing equipment 有权
标题翻译：高效多孔半导体制造设备
公开(公告)号：US08999058B2
公开(公告)日：2015-04-07
申请号：US12774667
申请日：2010-05-05
申请人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
发明人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
IPC分类号： C30B1/10 , C25D11/32 , H01L31/18 , C25D17/00 , C25D17/06 , C25D11/00
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

100. 发明授权

US08906218B2 Apparatus and methods for uniformly forming porous semiconductor on a substrate 有权
标题翻译：在基板上均匀地形成多孔半导体的装置和方法
公开(公告)号：US08906218B2
公开(公告)日：2014-12-09
申请号：US13288721
申请日：2011-11-03
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George Kamian , Jay Ashjaee , Takao Yonehara
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： C25D5/18 , C25D7/12 , C25D11/32 , C25F7/00 , C25D11/02
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

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