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1. 发明授权

US06326279B1 Process for producing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US06326279B1
公开(公告)日：2001-12-04
申请号：US09532079
申请日：2000-03-21
申请人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
发明人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n≧2) the thickness of the porous semiconductor layer.
摘要翻译：为了减少步骤数量并降低制造高质量SOI衬底的成本，制造半导体产品的方法包括以下步骤：在第一衬底的至少一个表面上形成多孔半导体层，形成无孔在多孔半导体层上形成单晶半导体层，将第一衬底与第二衬底接合，使前者的无孔单晶半导体层面向后面的非多孔单晶半导体层接触，形成接合结构，并将接合结构分为多孔半导体层，其中所述工艺还包括以下步骤：在所述第一衬底的所述一个表面上形成厚度至少为所述多孔半导体层的厚度的n倍（n≥2）的厚度的外延硅层。

2. 发明授权

US07256104B2 Substrate manufacturing method and substrate processing apparatus 失效
标题翻译：基板制造方法和基板处理装置
公开(公告)号：US07256104B2
公开(公告)日：2007-08-14
申请号：US10841621
申请日：2004-05-10
申请人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
发明人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L22/12 , H01L21/30604 , H01L21/31056 , H01L21/31654 , H01L21/32134 , H01L21/6708 , H01L21/76254 , H01L21/76259 , H01L22/20
摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
摘要翻译：首先制备具有厚SOI层的SOI衬底。然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

3. 发明申请

US20070190746A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20070190746A1
公开(公告)日：2007-08-16
申请号：US11690395
申请日：2007-03-23
申请人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
发明人： Masataka Ito , Kenji Yamagata , Yasuo Kakizaki , Kazuhito Takanashi , Hiroshi Miyabayashi , Ryuji Moriwaki , Takashi Tsuboi
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L22/12 , H01L21/02164 , H01L21/02238 , H01L21/30604 , H01L21/31056 , H01L21/31654 , H01L21/32134 , H01L21/6708 , H01L21/76254 , H01L21/76259 , H01L22/20
摘要： An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
摘要翻译：首先制备具有厚SOI层的SOI衬底。然后，使用不大于一个晶格的预定厚度的单位将SOI层减薄到目标膜厚度。这种稀化是通过重复单元稀化步骤进行的，该步骤包括将SOI层的表面氧化预定厚度不超过一个晶格的氧化步骤，以及选择性地除去氧化形成的氧化硅的去除步骤。通过向SOI层提供化学溶液来对SOI衬底的SOI层进行化学蚀刻，并测量蚀刻的SOI层的膜厚。当所测量的SOI层的膜厚度具有预定值时，SOI层的化学蚀刻处理结束。

4. 发明授权

US07008860B2 Substrate manufacturing method 失效
标题翻译：基板制造方法
公开(公告)号：US07008860B2
公开(公告)日：2006-03-07
申请号：US10778248
申请日：2004-02-17
申请人： Yasuo Kakizaki , Masataka Ito
发明人： Yasuo Kakizaki , Masataka Ito
IPC分类号： H01L21/30
CPC分类号： H01L21/76256 , H01L21/76254
摘要： This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer (12) is formed on a single-crystal Si substrate (11). Ions are implanted into the substrate (11) through the insulating layer (12) to form an ion-implanted layer (13). The insulating layer (12) is thinned down to form a thin insulating layer (12a). A thus prepared first substrate is placed on a second substrate (20) to form a bonded substrate stack (30). After that, the bonded substrate stack (30) is split at the ion-implanted layer (13).
摘要翻译：本发明提供一种制造具有薄的掩埋绝缘膜的衬底的方法。在单晶Si衬底（11）上形成绝缘层（12）。离子通过绝缘层（12）注入到衬底（11）中以形成离子注入层（13）。绝缘层（12）被减薄以形成薄的绝缘层（12a）。将如此制备的第一衬底放置在第二衬底（20）上以形成键合衬底叠层（30）。之后，键合衬底叠层（30）在离子注入层（13）处分裂。

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