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1. 发明授权

US08509387B2 X-ray imaging apparatus 有权
标题翻译： X射线成像装置
公开(公告)号：US08509387B2
公开(公告)日：2013-08-13
申请号：US13125862
申请日：2009-11-09
申请人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
发明人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
IPC分类号： G21K5/10
CPC分类号： G21K1/04 , A61B6/06 , A61B6/4007 , A61B6/4405 , A61B6/4441 , A61B6/587 , G21K1/046 , H01J2235/068
摘要： An X-ray imaging apparatus is provided with a multi X-ray source and a collimator in which a plurality of slits for X-rays to pass through are two-dimensionally formed, the size and position of the slits being adjustable. A control unit, as a first control mode, controls the size and position of the slits to move an examination region in parallel, when an X-ray source is changed to a different X-ray source, such that the examination directions are parallel before and after the change. Also, the control unit, as a second control mode, controls the size and position of the slits to rotate the examination direction, when an X-ray source is changed to a different X-ray source, such that the center of the examination regions is the same before and after the change.
摘要翻译： X射线摄像装置具有多个X射线源和准直器，其中多个用于X射线穿过的狭缝二维地形成，狭缝的尺寸和位置是可调节的。控制单元作为第一控制模式，当X射线源被改变为不同的X射线源时，控制狭缝的尺寸和位置并行地移动检查区域，使得检查方向在并在变化之后。此外，作为第二控制模式的控制单元，当将X射线源改变为不同的X射线源时，控制狭缝的尺寸和位置以旋转检查方向，使得检查区域的中心在改变之前和之后是一样的。

2. 发明授权

US08488742B2 X-ray generator, X-ray imaging apparatus, and control methods therefor 有权
标题翻译： X射线发生器，X射线成像装置及其控制方法
公开(公告)号：US08488742B2
公开(公告)日：2013-07-16
申请号：US12745437
申请日：2009-02-04
申请人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
发明人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
IPC分类号： H01J35/14
CPC分类号： H01J35/06 , A61B6/4021 , A61B6/405 , A61B6/4405 , A61B6/4441 , A61B6/469 , A61B6/542 , H01J35/065 , H01J2235/062 , H01J2235/068
摘要： In an X-ray generator which includes an electron beam generating unit which has a plurality of electron emitters and generates an electron beam corresponding to driven electron emitters, and a target electrode which generates X-rays with the irradiation position of an electron beam generated by the electron beam generating unit being an X-ray focus, the X-ray focus shape formed by a set of X-ray focuses on the target electrode is controlled by individually controlling driving of the plurality of electron emitters.
摘要翻译：在包括电子束产生单元的X射线发生器中，该电子束产生单元具有多个电子发射器并产生对应于被驱动的电子发射体的电子束，以及由电子束的照射位置产生X射线的目标电极，电子束产生单元是X射线焦点，通过单独控制多个电子发射器的驱动来控制通过一组X射线聚焦在目标电极上形成的X射线焦点形状。

3. 发明授权

US08139716B2 Multi X-ray generator and multi X-ray imaging apparatus 有权
标题翻译：多X射线发生器和多X射线成像装置
公开(公告)号：US08139716B2
公开(公告)日：2012-03-20
申请号：US12971849
申请日：2010-12-17
申请人： Masahiko Okunuki , Osamu Tsujii , Takeo Tsukamoto
发明人： Masahiko Okunuki , Osamu Tsujii , Takeo Tsukamoto
IPC分类号： H01J35/06
CPC分类号： H01J35/065 , H01J35/08 , H01J35/16 , H01J35/18 , H01J2235/062 , H01J2235/068 , H01J2235/087 , H01J2235/166 , H01J2235/168
摘要： A compact apparatus can form multi-X-ray beams with good controllability. Electron beams (e) emitted from electron emission elements (15) of a multi-electron beam generating unit (12) receive the lens effect of a lens electrode (19). The resultant electron beams are accelerated to the final potential level by portions of a transmission-type target portion (13) of an anode electrode (20). The multi-X-ray beams (x) generated by the transmission-type target portion (13) pass through an X-ray shielding plate (23) and X-ray extraction portions (24) in a vacuum chamber and are extracted from the X-ray extraction windows (27) of a wall portion (25) into the atmosphere.
摘要翻译：紧凑的装置可以形成具有良好可控性的多X射线束。从多电子束产生单元（12）的电子发射元件（15）发射的电子束（e）接收透镜电极（19）的透镜效应。通过阳极电极（20）的透射型目标部分（13）的部分将所得的电子束加速到最终的电位。由透射型目标部分（13）产生的多个X射线束（x）通过真空室中的X射线屏蔽板（23）和X射线提取部分（24），并从壁部分（25）的X射线提取窗口（27）进入大气。

4. 发明授权

US08084365B2 Method of manufacturing a nano structure by etching, using a substrate containing silicon 有权
标题翻译：通过蚀刻制造纳米结构体的方法，使用含硅的衬底
公开(公告)号：US08084365B2
公开(公告)日：2011-12-27
申请号：US12880188
申请日：2010-09-13
申请人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
发明人： Taiko Motoi , Kenji Tamamori , Shinan Wang , Masahiko Okunuki , Haruhito Ono , Toshiaki Aiba , Nobuki Yoshimatsu
IPC分类号： H01L21/308
CPC分类号： B82Y10/00 , H01L21/3083 , H01L21/31144
摘要： A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.
摘要翻译：使用含有Si的基板通过蚀刻制造纳米结构体的方法。将聚焦的Ga离子或In离子束照射在含有Si的衬底的表面上。注入Ga离子或In离子，同时溅射衬底的表面，使得在衬底的表面上形成含有Ga或In的层。使用含有氟（F）的气体进行干蚀刻，其中包含形成在基板表面上的Ga或In的层作为蚀刻掩模，并且纳米结构形成为具有至少2μm锡的图案根据预定线宽度的深度。

5. 发明申请

US20110249802A1 MULTI X-RAY GENERATING APPARATUS AND X-RAY IMAGING APPARATUS 有权
标题翻译：多X射线发生装置和X射线成像装置
公开(公告)号：US20110249802A1
公开(公告)日：2011-10-13
申请号：US13166192
申请日：2011-06-22
申请人： Masahiko Okunuki , Osamu Tsujii , Satoshi Shimizu , Takashi Ogura
发明人： Masahiko Okunuki , Osamu Tsujii , Satoshi Shimizu , Takashi Ogura
IPC分类号： H01J35/08
CPC分类号： A61B6/405 , A61B6/00 , A61B6/4007 , A61B6/4028 , A61B6/4035 , A61B6/4233 , A61B6/482 , H01J35/065 , H01J35/08 , H01J2235/062 , H01J2235/068 , H01J2235/087
摘要： A multi X-ray generating apparatus which has a plurality of electron sources arranged two-dimensionally and targets arranged at positions opposite to the electron sources includes a multi electron source which includes a plurality of electron sources and outputs electrons from driven electron sources by selectively driving a plurality of electron sources in accordance with supplied driving signals, and a target unit which includes a plurality of targets which generate X-rays in accordance with irradiation of electrons output from the multi electron source and outputs X-rays with different radiation qualities in accordance with the generation locations of X-rays. The generation locations and radiation qualities of X-rays from the target unit are controlled by selectively driving the electron sources of the multi electron source.
摘要翻译：具有二维布置的多个电子源和布置在与电子源相对的位置的目标的多X射线产生装置包括多电子源，其包括多个电子源，并通过选择性驱动从驱动电子源输出电子根据提供的驱动信号的多个电子源，以及目标单元，其包括根据从多电子源输出的电子的照射产生X射线的多个靶，并输出具有不同辐射质量的X射线与X射线的发生位置。通过选择性地驱动多电子源的电子源来控制来自目标单元的X射线的产生位置和辐射质量。

6. 发明申请

US20110216884A1 X-RAY IMAGING APPARATUS 有权
标题翻译： X射线成像装置
公开(公告)号：US20110216884A1
公开(公告)日：2011-09-08
申请号：US13125862
申请日：2009-11-09
申请人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
发明人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
IPC分类号： G01N23/04
CPC分类号： G21K1/04 , A61B6/06 , A61B6/4007 , A61B6/4405 , A61B6/4441 , A61B6/587 , G21K1/046 , H01J2235/068
摘要： An X-ray imaging apparatus is provided with a multi X-ray source and a collimator in which a plurality of slits for X-rays to pass through are two-dimensionally formed, the size and position of the slits being adjustable. A control unit, as a first control mode, controls the size and position of the slits to move an examination region in parallel, when an X-ray source is changed to a different X-ray source, such that the examination directions are parallel before and after the change. Also, the control unit, as a second control mode, controls the size and position of the slits to rotate the examination direction, when an X-ray source is changed to a different X-ray source, such that the center of the examination regions is the same before and after the change.
摘要翻译： X射线摄像装置具有多个X射线源和准直器，其中多个用于X射线穿过的狭缝二维地形成，狭缝的尺寸和位置是可调节的。控制单元作为第一控制模式，当X射线源被改变为不同的X射线源时，控制狭缝的尺寸和位置并行地移动检查区域，使得检查方向在并在变化之后。此外，作为第二控制模式的控制单元，当将X射线源改变为不同的X射线源时，控制狭缝的尺寸和位置以旋转检查方向，使得检查区域的中心在改变之前和之后是一样的。

7. 发明申请

US20090232272A1 X-RAY IMAGING APPARATUS AND CONTROL METHOD THEREOF 有权
标题翻译： X射线成像装置及其控制方法
公开(公告)号：US20090232272A1
公开(公告)日：2009-09-17
申请号：US12395773
申请日：2009-03-02
申请人： Osamu Tsujii , Keiji Tsuchiya , Masahiko Okunuki
发明人： Osamu Tsujii , Keiji Tsuchiya , Masahiko Okunuki
IPC分类号： H05G1/60
CPC分类号： A61B6/00 , A61B6/03 , A61B6/06 , A61B6/4021 , A61B6/4028 , A61B6/4233
摘要： An X-ray imaging apparatus includes a multi X-ray generating unit in which multiple X-ray foci are disposed in two-dimensional form at a predetermined pitch in a first direction, and a slit unit having multiple slit members each disposed opposite to its respective X-ray focus. Each slit member has multiple slits arranged in the first direction, and each of the slits forms a slice-formed X-ray beam whose lengthwise direction is a second direction that is different from the first direction. The two-dimensional detection unit detects the X-ray intensity of the formed X-ray beams at the detection surface. The X-ray imaging apparatus executes X-ray imaging at multiple positions while moving the multi X-ray generating unit and the slit unit in the first direction by the amount of the predetermined pitch, while keeping the relative positional relationship therebetween, and reconstructs an X-ray image based on the obtained X-ray intensity.
摘要翻译：一种X射线摄像装置，具备多个X射线发生单元，其中多个X射线焦点以第一方向以预定间距以二维形式设置，并且具有多个狭缝部件的狭缝单元各自与其相对设置各自的X射线焦点。每个狭缝构件具有沿着第一方向布置的多个狭缝，并且每个狭缝形成长度方向是与第一方向不同的第二方向的切片形状的X射线束。二维检测单元检测形成的X射线束在检测面的X射线强度。 X射线成像装置在多个X射线成像装置的同时，在保持其间的相对位置关系的同时，将多X射线产生部和狭缝部沿第1方向移动预定间距的量，进行X射线成像，基于获得的X射线强度的X射线图像。

8. 发明申请

US20080067437A1 CHARGED BEAM PROCESSING APPARATUS 失效
标题翻译：充电梁加工设备
公开(公告)号：US20080067437A1
公开(公告)日：2008-03-20
申请号：US11678244
申请日：2007-02-23
申请人： Masahiko OKUNUKI , Haruhito Ono , Shinan Wang , Kenji Tamamori
发明人： Masahiko OKUNUKI , Haruhito Ono , Shinan Wang , Kenji Tamamori
IPC分类号： H01J37/08
CPC分类号： H01J37/3056 , B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J2237/0435 , H01J2237/31732 , H01J2237/31744
摘要： A charged beam processing apparatus including a multi charged beam optical system which converges a plurality of charged beams by a lens and deflects the plurality of charged beams by a deflector to irradiate an object to be processed in a processing chamber, and a supply unit which supplies a gas into the processing chamber, includes a gas controller which controls the gas to be supplied into the processing chamber based on a processing condition, and a beam controller which controls the plurality of charged beams based on the processing condition, wherein at least one of material deposition on the surface of the object and etching of the surface of the object forms a structure.
摘要翻译：一种带电波束处理装置，包括多透光束光学系统，其通过透镜会聚多个带电波束，并且通过偏转器偏转所述多个带电波束以在处理室中照射待处理物体;以及供应单元，进入处理室的气体包括：气体控制器，其基于处理条件控制供给到处理室中的气体;以及光束控制器，其基于处理条件控制多个带电束，其中，至少一个在物体的表面上的材料沉积和对象的表面的蚀刻形成结构。

9. 发明授权

US06225637B1 Electron beam exposure apparatus 失效
标题翻译：电子束曝光装置
公开(公告)号：US06225637B1
公开(公告)日：2001-05-01
申请号：US08954520
申请日：1997-10-20
申请人： Shigeru Terashima , Masato Muraki , Masahiko Okunuki , Akira Miyake , Shin Matsui
发明人： Shigeru Terashima , Masato Muraki , Masahiko Okunuki , Akira Miyake , Shin Matsui
IPC分类号： H01J37302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/045 , H01J2237/31767
摘要： An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer via a reduction electron optical system, irradiates collimated electron beams toward an aperture board having an arcuated aperture sandwiched between two arcs having, as the center, the axis of the reduction electron optical system, and exposes the wafer with electron beams having an arcuated sectional shape that have been transmitted through the aperture.
摘要翻译：一种用于通过还原电子光学系统将由电子束形成的图像投影到晶片上的电子束曝光装置，将准直的电子束照射到具有弧形孔的孔板，该弧形孔夹在两个弧之间，该弧之间以中心为中心电子光学系统，并且使具有已经透过该孔的弧形截面形状的电子束曝光晶片。

10. 发明授权

US5554859A Electron emission element with schottky junction 失效
标题翻译：具肖特基结的电子发射元件
公开(公告)号：US5554859A
公开(公告)日：1996-09-10
申请号：US557678
申请日：1995-11-13
申请人： Takeo Tsukamoto , Nobuo Watanabe , Toshihiko Takeda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Nobuo Watanabe , Toshihiko Takeda , Masahiko Okunuki
IPC分类号： H01J1/308 , H01J9/02 , H01L29/06 , H01L29/12
CPC分类号： H01J1/308 , H01J9/022
摘要： This is an electron emission with a semiconductor substrate having a p-type semiconductor layer whose impurity concentration falls within a concentration range for causing an avalanche breakdown in a least a portion of a surface of the semiconductor layer. A Schottky electrode is connected to the semiconductor layer. There are a means for applying a reverse bias voltage between the Schottky electrode and the p-type semiconductor layer to cause the Schotty electrode to emit electrons, and a lead electrode, formed at a proper position, for externally guiding the emitted electrons. At least a portion of the Schottky electrode is formed of a thin film of a material selected from metals of Group 1A, Group 2A, Group 3A, and lanthanoids, metal silicides of Group 1A, Group 2A, Group Group 3A, and lanthanoids, and metal borides of Group 1A, Group 2A, Group 3A, and lanthanoids, and metal carbides of Group 4A. A film thickness of the Schotty electrode is set to be not more than 100 .ANG..
摘要翻译：这是具有半导体衬底的电子发射，其半导体衬底具有p型半导体层，其杂质浓度落在半导体层的表面的至少一部分中引起雪崩击穿的浓度范围内。肖特基电极连接到半导体层。存在在肖特基电极和p型半导体层之间施加反向偏置电压以使Schotty电极发射电子的装置和形成在适当位置的引线电极，用于外部引导发射的电子。肖特基电极的至少一部分由选自组1A，组2A，组3A和镧系元素的金属的薄膜，组1A，组2A，组3A和镧系元素的金属硅化物形成，以及第1A组，第2A组，第3A组和镧系金属硼化物，以及4A组金属碳化物。将Schotty电极的膜厚设定为不超过100。

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