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1. 发明授权

US06451670B1 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method 失效
公开(公告)号：US06451670B1
公开(公告)日：2002-09-17
申请号：US09138802
申请日：1998-08-24
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： H01L2130
CPC分类号： H01L21/67092 , H01L21/2007
摘要： The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.

2. 发明授权

US06309505B1 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US06309505B1
公开(公告)日：2001-10-30
申请号：US09037479
申请日：1998-03-10
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： B65G4907
CPC分类号： H01L21/68728 , H01L21/67092 , Y10T29/53191 , Y10T156/1744
摘要： One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180° to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.
摘要翻译：将一个晶片放置在晶片支撑台上，其前侧面向上，另一个晶片被其前侧朝上的晶片卡盘部分卡住。晶片卡盘部分围绕轴枢转大约180°以使两个晶片彼此面对大致平行。响应于通过晶片卡盘部分取消上晶片的夹持，上晶片的中心部分被压针按压以叠加两个晶片。

3. 发明授权

US06383890B2 Wafer bonding method, apparatus and vacuum chuck 有权
标题翻译：晶圆接合方法，设备和真空吸盘
公开(公告)号：US06383890B2
公开(公告)日：2002-05-07
申请号：US09211875
申请日：1998-12-15
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： H01L2130
CPC分类号： H01L21/67092 , H01L21/6838
摘要： Two wafers are properly brought into contact with each other. The first wafer is supported by a wafer support table (3) having an annular peripheral portion (3d). The substrate support table (3) is in contact with only the peripheral portion (3d) of the first wafer. While the second wafer opposing the first wafer is supported, the lower surface of the second wafer is pressed near its central portion, so the first and second wafers come into contact with each other outward from the central portion. The central portion (3c) of the wafer support table (3) is not in contact with the first wafer. Even when particles adhere to the central portion, unevenness on the supported first wafer can be prevented. Therefore, no gas is left between the wafers. This invention also provides a wafer support table formed by fabricating a silicon wafer. A commercially available silicon wafer is fabricated by lithography to prepare a wafer support table (31). The wafer support table (31) has sealing portions (31a, 31b) and deflection prevention portions (31c). The wafer to be supported is chucked by reducing the pressure between the sealing portions (31a, 31b). The wafer to be supported is in contact only with the sealing portions (31a, 31b) and the deflection prevention portions (31c)
摘要翻译：两个晶片正确地相互接触。第一晶片由具有环形周边部分（3d）的晶片支撑台（3）支撑。基板支撑台（3）仅与第一晶片的周边部分（3d）接触。当与第一晶片相对的第二晶片被支撑时，第二晶片的下表面被压在其中心部分附近，因此第一和第二晶片从中心部分向外接触。晶片支撑台（3）的中心部分（3c）不与第一晶片接触。即使当颗粒粘附到中心部分时，也可以防止被支撑的第一晶片上的不均匀。因此，晶片之间没有气体留下。本发明还提供了通过制造硅晶片形成的晶片支撑台。通过光刻制造市售硅晶片以制备晶片支撑台（31）。晶片支撑台（31）具有密封部（31a，31b）和偏转防止部（31c）。通过减小密封部（31a，31b）之间的压力来夹持待支撑的晶片。待支撑的晶片仅与密封部分（31a，31b）和偏转防止部分（31c）接触，

4. 发明授权

US06706618B2 Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate fabrication method 失效
标题翻译：基板处理装置，基板支撑装置，基板处理方法以及基板的制造方法
公开(公告)号：US06706618B2
公开(公告)日：2004-03-16
申请号：US10206214
申请日：2002-07-29
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： H01L2176
CPC分类号： H01L21/67092 , H01L21/2007
摘要： The spaces in chuck grooves 3a and 3b are evacuated to chuck the entire surface of a wafer 1 to the chuck surface of a wafer support table 3 and curve the wafer 1. A wafer 2 is horizontally opposed to the wafer 1, and the center of the wafer 2 is pressed by a press pin 6a. The centers of the two wafers 1 and 2 are contacted, and the contact portion gradually spreads to the vicinity of the periphery of a central portion 3c and takes a substantially circular shape. After that, the chuck by the chuck grooves 3a is stopped. Consequently, the wafer 1 flattens, and the entire surfaces of the wafers 1 and 2 are contacted.
摘要翻译：吸盘槽3a和3b中的空间被抽真空以将晶片1的整个表面吸附到晶片支撑台3的卡盘表面并使晶片1弯曲。晶片2与晶片1水平相对，晶片2被压销6a按压。两个晶片1和2的中心接触，并且接触部分逐渐扩展到中心部分3c的周边附近并呈现大致圆形。之后，由卡盘槽3a卡住停止。因此，晶片1变平，晶片1和2的整个表面接触。

5. 发明授权

US5458755A Anodization apparatus with supporting device for substrate to be treated 失效
标题翻译：具有待处理基板的支撑装置的阳极氧化装置
公开(公告)号：US5458755A
公开(公告)日：1995-10-17
申请号：US148341
申请日：1993-11-08
申请人： Yasutomo Fujiyama , Mitsuhiro Ishii , Senju Kanbe , Takao Yonehara , Toru Takisawa , Akira Okita , Kiyofumi Sakaguchi , Takanori Watanabe , Kazuo Kokumai
发明人： Yasutomo Fujiyama , Mitsuhiro Ishii , Senju Kanbe , Takao Yonehara , Toru Takisawa , Akira Okita , Kiyofumi Sakaguchi , Takanori Watanabe , Kazuo Kokumai
IPC分类号： C25D5/02 , C25D17/08 , C25D17/06 , C25D21/00
CPC分类号： C25D11/32 , C25D11/005 , C25D17/004 , C25D17/06 , C25D5/022
摘要： An anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the semiconductor substrate between a pair of electrodes in an electrolytic solution and applying a voltage across the pair of electrodes. The anodization apparatus includes an elastic sealing member for supporting a peripheral portion of the semiconductor substrate such that a surface portion of a semiconductor substrate remains exposed, a support jig which includes a tapered hollow portion for supporting the sealing member, and a device for introducing a fluid of gas or liquid into the tapered hollow portion. When the fluid is introduced, the sealing member is pressed against and brought into hermetic contact with the tapered hollow portion and with the entire peripheral portion of the semiconductor substrate such that the electrolytic solution is separated into electrically isolated parts by coordination between the semiconductor substrate, the sealing member, and the support jig. Anodization of the semiconductor substrate may then be carried out, such as by producing a porous silicon layer on the surface of the semiconductor substrate.
摘要翻译：一种阳极氧化装置，用于通过将半导体衬底支撑在电解液中的一对电极之间并在一对电极之间施加电压来阳极氧化半导体衬底的表面。阳极氧化装置包括用于支撑半导体衬底的周边部分使得半导体衬底的表面部分保持露出的弹性密封构件，包括用于支撑密封构件的锥形中空部分的支撑夹具，以及用于引入气体或液体的流体进入锥形中空部分。当引入流体时，密封构件被挤压并与锥形中空部分和半导体衬底的整个周边部分气密接触，使得电解溶液通过半导体衬底之间的配合被分离成电隔离部分，密封构件和支撑夹具。然后可以进行半导体衬底的阳极氧化，例如通过在半导体衬底的表面上产生多孔硅层。

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