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91. 发明申请

US20090311490A1 CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL 有权
标题翻译：通过调谐过滤材料的化学品线的化学研究
公开(公告)号：US20090311490A1
公开(公告)日：2009-12-17
申请号：US12137743
申请日：2008-06-12
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： B32B3/00 , G03F7/20
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

92. 发明申请

US20090286180A1 FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS 有权
标题翻译：用于光刻应用的熔融芳构结构和方法
公开(公告)号：US20090286180A1
公开(公告)日：2009-11-19
申请号：US12508652
申请日：2009-07-24
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

93. 发明授权

US07566527B2 Fused aromatic structures and methods for photolithographic applications 失效
标题翻译：熔融芳族结构和光刻应用的方法
公开(公告)号：US07566527B2
公开(公告)日：2009-07-28
申请号：US11769089
申请日：2007-06-27
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

94. 发明申请

US20080227030A1 Use of Mixed Bases to Enhance Patterned Resist Profiles on Chrome or Sensitive Substrates 有权
标题翻译：使用混合基材来增强铬或敏感基材上的图案化抗蚀剂型材
公开(公告)号：US20080227030A1
公开(公告)日：2008-09-18
申请号：US10597904
申请日：2004-02-11
申请人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
发明人： Wayne M. Moreau , Marie Angelopoulos , Wu-Song Huang , David R. Medeiros , Karen E. Petrillo
IPC分类号： G03F7/004 , G03F7/34
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译：通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。

95. 发明授权

US07314700B2 High sensitivity resist compositions for electron-based lithography 有权
标题翻译：用于电子光刻的高灵敏度抗蚀剂组合物
公开(公告)号：US07314700B2
公开(公告)日：2008-01-01
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
IPC分类号： G03C1/492 , G03C1/494 , G03C1/76 , G03C5/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译：具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。抗蚀剂组合物也可用于其它平版印刷工艺。

96. 发明申请

US20070087285A1 Top antireflective coating composition with low refractive index at 193nm radiation wavelength 有权
$Top antireflective coating composition with low refractive index at 193nm radiation wavelength$
标题翻译：顶部抗反射涂层组合物，在193nm辐射波长下具有低折射率
公开(公告)号：US20070087285A1
公开(公告)日：2007-04-19
申请号：US11249693
申请日：2005-10-13
申请人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
发明人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳族部分和折射率值n小于1.5的水溶性基团可溶性聚合物的组合物，其特别用作193nm干法光刻中的顶部抗反射涂层过程。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时通过其在含水碱性显影剂溶液中的溶解度而提供易于使用。

97. 发明授权

US07090963B2 Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging 失效
标题翻译：用化学放大抗蚀剂成像形成50nm或更小半间距特征的方法
公开(公告)号：US07090963B2
公开(公告)日：2006-08-15
申请号：US10604082
申请日：2003-06-25
申请人： David R. Medeiros , Wu-Song Huang , Gregory M. Wallraff , Bill Hinsberg , Frances Houle
发明人： David R. Medeiros , Wu-Song Huang , Gregory M. Wallraff , Bill Hinsberg , Frances Houle
IPC分类号： G03C5/00
CPC分类号： G03F7/265 , G03F7/38
摘要： Lithographic imaging of 50 nm (or less) half-pitch features in chemically amplified resists (commonly used in the manufacture of integrated circuits) is enabled by the use of reduced temperature post-exposure processing and low activation energy chemically amplified resists. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g., water).
摘要翻译：通过使用降低温度的曝光后处理和低活化能的化学放大抗蚀剂，能够实现化学放大抗蚀剂中50nm（或更少）半间距特征的平版印刷成像（通常用于集成电路的制造）。曝光后处理优选包括环境温度至适度升高的温度和脱保护反应依赖性共反应物（例如水）的存在。

98. 发明申请

US20060035167A1 Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer 失效
公开(公告)号：US20060035167A1
公开(公告)日：2006-02-16
申请号：US10916755
申请日：2004-08-12
申请人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Lang , Wenjie Li , David Medeiros , Wayne Moreau , Karen Petrillo
发明人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Lang , Wenjie Li , David Medeiros , Wayne Moreau , Karen Petrillo
IPC分类号： G03F7/00
CPC分类号： C08F220/14 , C08F220/38 , G03F7/0045 , G03F7/095
摘要： A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.

99. 发明申请

US20050074689A1 Silicon-containing compositions for spin-on arc/hardmask materials 有权
标题翻译：用于旋转电弧/硬掩模材料的含硅组合物
公开(公告)号：US20050074689A1
公开(公告)日：2005-04-07
申请号：US10679782
申请日：2003-10-06
申请人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Scooriyakumaren
发明人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Scooriyakumaren
IPC分类号： G03F7/11 , G03F1/00 , G03F7/00 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/20 , H01L21/027
CPC分类号： G03F7/0754 , G03F7/0045 , G03F7/091 , Y10S430/106 , Y10S430/115
摘要： Antireflective compositions characterized by the presence of an Si-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译：特征在于存在具有侧生发色团部分的含Si聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

100. 发明授权

US5202061A Electrically conductive polymeric materials and uses thereof 失效
标题翻译：导电聚合材料及其用途
公开(公告)号：US5202061A
公开(公告)日：1993-04-13
申请号：US717968
申请日：1991-06-20
申请人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
发明人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
IPC分类号： C08G61/12 , H01B1/12 , H01J29/86 , H01L23/498 , H01L23/60 , H05K9/00
CPC分类号： H05K9/0079 , C08G61/12 , H01B1/125 , H01B1/127 , H01B1/128 , H01J29/868 , H01L23/49894 , H01L23/60 , H05K9/0081 , H01L2924/0002
摘要： Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat. The electrically conductive polymers of the present invention are useful as electron discharge layers for electron beam applications, such as, SEM observations, as electromagnetic interference coatings on dielectric surfaces and as electron beam resist which acts as a discharge layer.
摘要翻译：含有导电聚合物的结构及其制造方法。可以在选自取代和未取代的聚苯胺，聚对苯二烯基乙烯基，取代和未取代的聚噻吩，取代和未取代的聚对苯硫醚，取代的聚呋喃，取代的聚吡咯，取代的聚硒酚，由可溶性前体形成的聚乙炔，其组合及其与其它聚合物的共混物。聚合物含有选自鎓盐，碘鎓盐，三氟甲磺酸盐，硼酸盐和甲苯磺酸盐和磺酰氧基酰亚胺的掺杂前体。通过在选择性地暴露于诸如电磁辐射，电子束和热能的能量源上选择性掺杂，可以在聚合物中选择性地诱导电导率。本发明的导电聚合物可用作用于电子束应用的电子放电层，例如SEM观察，作为电介质表面上的电磁干扰涂层和用作放电层的电子束抗蚀剂。

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