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    • 91. 发明授权
    • Apparatus and method for edge based duty cycle conversion
    • 基于边沿的占空比转换的装置和方法
    • US06323706B1
    • 2001-11-27
    • US09513721
    • 2000-02-24
    • Donald C. StarkStefanos Sidiropoulos
    • Donald C. StarkStefanos Sidiropoulos
    • H03K3017
    • H03K5/1534H03K5/151
    • A duty cycle converter generating a pair of output signals whose cross-point duty cycle is substantially equal to the edge duty cycle of a pair of input signals. The duty cycle converter includes an edge detector and a signal generator. The edge detector detects and indicates a first transition of a first input signal and a second transition of a second input signal. The signal generator takes the outputs of the edge detector and generates a first output signal and a second output signal. The signal generator causes the cross-point duty cycle of the first output signal to substantially equal the edge duty cycle of the first input cycle. The signal generator does so by forcing a first time delay between adjacent cross-over points of the first and second output signals to be substantially equal to a second time delay between the first transition and the second transition.
    • 产生一对输出信号的占空比转换器,其交叉点占空比基本上等于一对输入信号的边沿占空比。 占空比转换器包括边缘检测器和信号发生器。 边缘检测器检测并指示第一输入信号的第一转换和第二输入信号的第二转换。 信号发生器接收边缘检测器的输出,并产生第一输出信号和第二输出信号。 信号发生器使得第一输出信号的交叉点占空比基本上等于第一输入周期的边沿占空比。 信号发生器通过强制第一和第二输出信号的相邻交叉点之间的第一时间延迟基本上等于第一转换和第二转换之间的第二时间延迟来实现。
    • 92. 发明授权
    • Circuit and method for column redundancy for high bandwidth memories
    • 高带宽存储器的列冗余电路和方法
    • US6122208A
    • 2000-09-19
    • US398252
    • 1999-09-17
    • Donald C. Stark
    • Donald C. Stark
    • G11C29/00G11C7/00
    • G11C29/70
    • A memory device includes a base memory with a defective memory cell. A read circuit with a serial output port and parallel input ports is connected to the base memory. The read circuit converts parallel read data received at the parallel input ports to a first serial data stream, which is applied to the serial output port. The first serial data stream includes a faulty bit corresponding to the defective memory cell. A spare memory stores a spare bit corresponding to the defective memory cell. A bit insertion circuit is connected to the spare memory and the serial output port of the read circuit. The bit insertion circuit substitutes the faulty bit value of the first serial data stream with the spare bit.
    • 存储器件包括具有缺陷存储器单元的基本存储器。 具有串行输出端口和并行输入端口的读取电路连接到基本存储器。 读取电路将并行输入端口处接收的并行读取数据转换为应用于串行输出端口的第一串行数据流。 第一串行数据流包括对应于有缺陷的存储器单元的故障位。 备用存储器存储对应于有缺陷的存储器单元的备用位。 一个位插入电路连接到备用存储器和读取电路的串行输出端口。 位插入电路用备用位代替第一串行数据流的故障位值。
    • 97. 发明授权
    • Semiconductor memory with bypass circuit
    • 带旁路电路的半导体存储器
    • US5479370A
    • 1995-12-26
    • US376439
    • 1995-01-23
    • Tohru FuruyamaDonald C. Stark
    • Tohru FuruyamaDonald C. Stark
    • G11C11/401G11C8/04G11C11/405G11C29/00G11C29/04G11C13/00G11C11/34
    • G11C8/04
    • A semiconductor memory of this invention comprises a memory cell array containing memory cells arranged in matrix form, word lines each connected to all the memory cells in the same row, and bit lines each connected to all the memory cells in the same column, a shift register containing a plurality of stages of shift circuits which is used as a serial address pointer for serially specifying the addresses of actually used rows and/or columns in the memory cell array, a bypass circuit capable of forming a bypass for the shift circuit at a given stage of the shift register, and a bypass control circuit for determining whether or not a bypass is to be formed by the bypass circuit.
    • 本发明的半导体存储器包括存储单元阵列,该存储单元阵列包含以矩阵形式布置的存储单元,每行连接到同一行中的所有存储单元的字线以及连接到同一列中的所有存储单元的位线, 寄存器,其包含用于串行地指定存储单元阵列中的实际使用的行和/或列的地址的串行地址指针的多级移位电路,能够在一个位置上形成用于移位电路的旁路的旁路电路 移位寄存器的给定级,以及用于判断旁路是否由旁路电路形成的旁路控制电路。