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    • 5. 发明授权
    • Pulse multiplexed output system
    • 脉冲多路复用输出系统
    • US07274244B2
    • 2007-09-25
    • US11123225
    • 2005-05-06
    • Wayne FangWayne S. RichardsonKurt T. Knorpp
    • Wayne FangWayne S. RichardsonKurt T. Knorpp
    • H03K17/00
    • H03K17/693
    • A pulse multiplexed output subsystem is disclosed. In one particular exemplary embodiment, the output subsystem may comprise a plurality of pulse generators, a first pair of transistors, and a second pair of transistors, wherein each of the first pair of transistors is coupled to a respective one of a first pair of the plurality of pulse generators, and wherein each of the second pair of transistors is coupled to a respective one of a second pair of the plurality of pulse generators. The output subsystem may also comprise a first pair of resistive loads, wherein each of the first pair of resistive loads is coupled to a respective one of the first pair of transistors and a respective one of the second pair of transistors, and a first current source coupled to the first pair of transistors and the second pair of transistors.
    • 公开了脉冲多路复用输出子系统。 在一个特定示例性实施例中,输出子系统可以包括多个脉冲发生器,第一对晶体管和第二对晶体管,其中第一对晶体管中的每一个耦合到第一对晶体管中的相应一个 多个脉冲发生器,并且其中第二对晶体管中的每一个耦合到第二对多个脉冲发生器中的相应一个。 输出子系统还可以包括第一对电阻负载,其中第一对电阻负载中的每一个耦合到第一对晶体管中的相应一个和第二对晶体管中的相应一个,以及第一电流源 耦合到第一对晶体管和第二对晶体管。
    • 6. 发明授权
    • Integrated circuit memory system having dynamic memory bank count and page size
    • 具有动态存储体积和页面大小的集成电路存储器系统
    • US07254075B2
    • 2007-08-07
    • US10954941
    • 2004-09-30
    • Steven WooMichael ChingChad A. BellowsWayne S. RichardsonKurt T. KnorppJun Kim
    • Steven WooMichael ChingChad A. BellowsWayne S. RichardsonKurt T. KnorppJun Kim
    • G11C7/02
    • G11C7/106G11C7/065G11C7/1045G11C7/1051
    • A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in dynamic memory bank count and page size mode. The integrated circuit memory device includes a first and second row of storage cells coupled to a row of sense amplifiers including a first and second plurality of sense amplifiers. During the first mode of operation, a first plurality of data is transferred from the first plurality of storage cells to the row of sense amplifiers. During the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers. The second and third plurality of data is accessible simultaneously from the memory device interface during the second mode of operation. In an embodiment, the second plurality of data is transferred from the first half of the first row and the third plurality of data is transferred from the second half of the second row.
    • 存储器系统包括主设备,诸如图形控制器或处理器,以及可以动态存储器库计数和页大小模式操作的集成电路存储器件。 集成电路存储器件包括耦合到包括第一和第二多个读出放大器的读出放大器行的第一和第二行存储单元。 在第一操作模式期间,第一多个数据从第一多个存储单元传送到读出放大器行。 在第二操作模式期间,第二多个数据从第一行存储单元传送到第一多个读出放大器,并且第三多个数据从第二行存储单元传送到第二多个读出放大器 。 在第二操作模式期间,第二和第三多个数据可以从存储器设备接口同时访问。 在一个实施例中,第二多个数据从第一行的前半部分传送,第三个数据从第二行的后半部分传送。