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    • 8. 发明授权
    • Electronic volume circuit
    • 电子音量电路
    • US08649532B2
    • 2014-02-11
    • US12850990
    • 2010-08-05
    • Koichiro Adachi
    • Koichiro Adachi
    • H03G3/00H03F99/00
    • H03F3/45475H03F3/187H03F2200/03H03F2200/78H03F2203/45512H03F2203/45526H03F2203/45528H03F2203/45534H03F2203/45536H03F2203/45544H03F2203/45551H03F2203/45616H03G3/001H03G5/025
    • An electronic volume circuit includes a first signal processing circuit and a second signal processing circuit that are cascaded together. The first signal processing circuit includes a first operational amplifier including an input terminal and an output terminal, one or more input resistors inputting one or more signals to the input terminal of the first operational amplifier, and a feedback resistor connected between the input terminal and the output terminal of the first operational amplifier. The second signal processing circuit includes a second operational amplifier including an input terminal and an output terminal, an input capacitor inputting a signal output from the first operational amplifier to the input terminal of the second operational amplifier, and a resistor and a capacitor connected in parallel between the input terminal and the output terminal of the second operational amplifier.
    • 电子体积电路包括级联在一起的第一信号处理电路和第二信号处理电路。 第一信号处理电路包括:第一运算放大器,包括输入端和输出端,将一个或多个输入电阻输入到第一运算放大器的输入端的一个或多个输入电阻,以及连接在输入端与第 第一运算放大器的输出端。 第二信号处理电路包括:第二运算放大器,包括输入端子和输出端子;输入电容器,将从第一运算放大器输出的信号输入到第二运算放大器的输入端子;以及电阻器和并联连接的电容器 在第二运算放大器的输入端和输出端之间。
    • 9. 发明授权
    • Stripping and cleaning agent for removing dry-etching and photoresist
residues from a semiconductor substrate, and a method for forming a
line pattern using the stripping and cleaning agent
    • 用于从半导体衬底去除干蚀刻和光致抗蚀剂残留物的剥离和清洁剂,以及使用剥离和清洁剂形成线图案的方法
    • US5630904A
    • 1997-05-20
    • US410726
    • 1995-03-27
    • Tetsuo AoyamaRieko NakanoAkira IshihamaKoichiro Adachi
    • Tetsuo AoyamaRieko NakanoAkira IshihamaKoichiro Adachi
    • G03F7/42H01L21/02H01L21/027H01L21/302H01L21/3065H01L21/3213C09K13/00
    • H01L21/02071G03F7/422G03F7/425H01L21/02063H01L21/32138Y10S438/963
    • Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.
    • 用于去除干蚀刻光刻胶残渣的剥离和清洁剂,以及使用剥离和清洁剂形成铝基线图案的方法。 剥离剂和清洁剂含有(a)5-50重量%的由式[R1] m [COONHp(R2)q] n表示的有机碳铵铵盐或胺羧酸盐,其中R 1是氢,或 具有1至18个碳原子的烷基或芳基; R2是氢或具有1至4个碳原子的烷基; m和n独立地为1至4的整数,p为1至4的整数,q为1至3的整数,p + q = 4和(b)0.5至15重量%的氟 复合。 本发明的方法有利地应用于用剥离和清洁剂处理干蚀刻的半导体衬底。 半导体衬底包括其上具有含有铝的导电层的半导体晶片。 通过图案化的光致抗蚀剂掩模对导电层进行干蚀刻,以形成具有蚀刻侧壁的布线体。 干蚀刻在侧壁上形成侧壁保护膜。 根据本发明的方法,侧壁保护膜和其它抗蚀剂残留物完全释放而不会腐蚀布线体。
    • 10. 发明授权
    • Oligosaccharide aromatic glycoside and sulfate thereof
    • 寡糖芳香糖苷及其硫酸盐
    • US5498602A
    • 1996-03-12
    • US944077
    • 1992-09-11
    • Tadao ShojiNahoko TakahashiNaoya IkushimaToshiyuki UryuTakashi YoshidaNaoki YamamotoHideki NakashimaKaname KatsurayaKoichiro AdachiFusayo Kataoka
    • Tadao ShojiNahoko TakahashiNaoya IkushimaToshiyuki UryuTakashi YoshidaNaoki YamamotoHideki NakashimaKaname KatsurayaKoichiro AdachiFusayo Kataoka
    • A61K31/70A61K31/7028A61K31/7034A61P31/12A61P31/18C07H15/203C08B37/00C07G3/00C07H11/00
    • C07H15/203C08B37/006
    • Oligosaccharide aromatic glycoside sulfates and physiologically acceptable salts thereof, are disclosed. Further, antiviral agents having these sulfate compounds as the active components, and particularly an antiviral agent, wherein the virus is one which causes AIDS (Acquired Immune Deficiency Syndrome), are disclosed. The active components or the glycoside sulfates, and the salts thereof, are characterized by an oligosaccharide aromatic glycoside sulfate in which the hydrogen of the position-1 hydroxyl group of the terminal sugar of an oligosaccharide is substituted with a specified formula having an alkyl group consisting of 1 to 18 carbons, an oxygen or no oxygen, and an allylene group. The number of constituent monosaccharides in the oligosaccharide portion is preferably within a range of 2 to 20. Further, 10% or more of the remaining hydroxyl groups of the sugar subunits are subjected to sulfated esterification. In addition the antiviral agent exhibits low toxicity and is useful in the treatment of AIDS. Furthermore, an oligosaccharide is also disclosed as described above with the exception that it is the hydrogen atom of the position 1 hydrogen group at the terminal sugar residue which is substituted with the specified formula, also described above. However, in addition the remaining hydroxyl groups of the sugar portion of this oligosaccharide are protected by acyl groups or are present in an unprotected form. Also disclosed is a method for the production of an oligosaccharide aromatic glycoside sulfate synthesized by sulfation using a sulfating agent.
    • 公开了寡糖芳香糖苷硫酸盐及其生理上可接受的盐。 此外,公开了具有这些硫酸盐化合物作为活性成分的抗病毒剂,特别是其中病毒是引起AIDS(获得性免疫缺陷综合征)的抗病毒剂。 活性成分或糖苷硫酸盐及其盐的特征在于寡糖芳香糖苷硫酸盐,其中寡糖末端糖的位置1羟基的氢被具有烷基的特定式所取代, 1至18个碳,氧或无氧,以及烯丙基。 寡糖部分中的构成单糖的数量优选在2〜20的范围内。此外,将糖亚基的剩余羟基的10%以上进行硫酸化酯化。 此外,抗病毒剂的毒性低,可用于治疗艾滋病。 此外,还公开了如上所述的寡糖,不同之处在于它是上述也被指定式取代的末端糖残基上的1位氢原子的氢原子。 然而,此外,该寡糖的糖部分的剩余羟基由酰基保护或以未保护的形式存在。 还公开了通过使用硫酸化剂硫酸化合成的寡糖芳香族糖苷硫酸盐的制造方法。