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1. 发明授权

US4745611A Buried twin ridge substrate laser 失效
标题翻译：埋式双脊基板激光
公开(公告)号：US4745611A
公开(公告)日：1988-05-17
申请号：US922654
申请日：1986-10-24
申请人： Ken Hamada , Kunio Itoh , Masahiro Kume , Takao Shibutani , Hirokazu Shimizu
发明人： Ken Hamada , Kunio Itoh , Masahiro Kume , Takao Shibutani , Hirokazu Shimizu
IPC分类号： H01S5/16 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/16
摘要： A BTRS (buried Twin-Ridge Substrate) structure laser, wherein an oblong protrusion (10) is provided on a substrate (1) of a first conductivity type and two ridges (9, 9) divided by a groove (31) therebetween are provided on a second layer (2) of a second conductivity type, and thereon plural layers (3, 4, 5, 6) including an active layer (4) are provided is improved to have longer service life such that: the protrusion (10) is shortened so as to have its both ends apart inside cavity facet of the substrate (1), or further by width of each ridge (9, 9) is narrowed at both ends thereof thereby forming narrowed end parts (9', 9'), so that excessive current injection to the active layer near the cavity facet is eliminated.
摘要翻译：一种BTRS（埋藏双脊基板）结构激光器，其中在第一导电类型的基板（1）上设置有长方形突起（10），并且在它们之间划分有两个脊（9,9）和一个凹槽（31）在第二导电类型的第二层（2）上设置有包括有源层（4）的多个层（3,4,5,6），其具有更长的使用寿命，使得：突起（10）被缩短为使得其两端分开在基板（1）的腔面内，或者每个脊（9,9）的宽度在其两端变窄，从而形成变窄的端部部分（9'，9'），从而消除了在腔面附近对活性层的过度电流注入。

2. 发明授权

US4675074A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4675074A
公开(公告)日：1987-06-23
申请号：US761023
申请日：1985-07-31
申请人： Masaru Wada , Hirokazu Shimizu , Takao Shibutani , Kunio Itoh , Ken Hamada , Iwao Teramoto
发明人： Masaru Wada , Hirokazu Shimizu , Takao Shibutani , Kunio Itoh , Ken Hamada , Iwao Teramoto
IPC分类号： H01L21/306 , H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01S5/2232 , H01L21/30612 , H01L21/30617 , H01L33/0062 , H01S5/32308 , H01S5/2081 , H01S5/2201 , H01S5/32316
摘要： The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x . The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.
摘要翻译：本发明提供一种用于半导体器件的化学蚀刻方法，其包括形成具有表面（100）的第一层Ga 1-x Al x As（0 的方向化学蚀刻所述层的步骤。第二层的蚀刻面的倾斜角取决于第二层的摩尔分数y，第一层的蚀刻面的倾斜角取决于第二层的摩尔分数y和第一层的摩尔分数x 层。这些事实在本发明中最好地利用，使得第一层的蚀刻轮廓可以具有期望的倾斜角。通过利用这种化学蚀刻方法，可以通过化学蚀刻具有垂直于结的平坦腔面的半导体激光器来制造; 也可以提供具有侧壁垂直的槽的内条型半导体激光器。

3. 发明授权

US4731792A Semiconductor laser device with decreased light intensity noise 失效
标题翻译：半导体激光器件具有降低的光强度噪声
公开(公告)号：US4731792A
公开(公告)日：1988-03-15
申请号：US948393
申请日：1986-12-30
申请人： Hirokazu Shimizu , Masahiro Kume , Masuru Wada , Kunio Itoh , Ken Hamada , Fumiko Tajiri
发明人： Hirokazu Shimizu , Masahiro Kume , Masuru Wada , Kunio Itoh , Ken Hamada , Fumiko Tajiri
IPC分类号： H01S5/00 , H01S5/028 , H01S5/0683 , H01S5/223 , H01S3/19
CPC分类号： H01S5/028 , H01S5/0014 , H01S5/0683 , H01S5/2232 , H01S5/2235
摘要： In a TRS (twin ridge substrate) type semiconductor laser, reflectivity at both facets of the resonator at the oscillation wavelength is selected to be higher than the reflectivity of the semiconductor crystal of the laser device, but smaller than 1, thereby stabilizing the light oscillation with a low S/N ratio.
摘要翻译：在TRS（双脊衬底）型半导体激光器中，选择谐振器在振荡波长处的两个面处的反射率高于激光器件的半导体晶体的反射率，但小于1，从而稳定光振荡 S / N比低。

4. 发明授权

US4716571A A high-output semiconductor laser of dove tail groove type 失效
标题翻译：高输出半导体激光器的鸽尾槽型
公开(公告)号：US4716571A
公开(公告)日：1987-12-29
申请号：US886763
申请日：1986-07-16
申请人： Ken Hamada , Masaru Wada , Kunio Itoh
发明人： Ken Hamada , Masaru Wada , Kunio Itoh
IPC分类号： H01L21/308 , H01L21/208 , H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： A semiconductor substrate having a groove with a dove-tail-shaped cross section is used as a substrate and thereon, several epitaxial layers including an active layer are formed and a current injection region is formed immediately above the groove; the semiconductor laser attains a high power lasing with the fundamental transverse mode.
摘要翻译：使用具有鸽尾形截面的凹槽的半导体衬底作为衬底，并且在其上形成包括有源层的几个外延层，并且在凹槽的正上方形成电流注入区域; 半导体激光器实现了具有基本横向模式的高功率激光。

5. 发明授权

US5475670A Deflection plate for optical pick-up device 失效
标题翻译：用于光学拾取装置的偏转板
公开(公告)号：US5475670A
公开(公告)日：1995-12-12
申请号：US129547
申请日：1993-09-29
申请人： Ken Hamada , Hideyuki Nakanishi , Hirokazu Shimizu
发明人： Ken Hamada , Hideyuki Nakanishi , Hirokazu Shimizu
IPC分类号： G02B5/18 , G02B27/10 , G02B27/42 , G11B7/09 , G11B7/135 , G11B7/00
CPC分类号： G02B27/1013 , G02B27/1086 , G11B7/1353
摘要： A deflection plate for deflecting laser beams includes a transparent plate on which two grating areas are formed on the same surface. The first grating area has a plurality of parallel grooves. The second grating area has a plurality of grooves in a predetermined pattern. The depth and/or the duty ratio of the grooves in the first grating area differs from that in the second grating area.
摘要翻译：用于偏转激光束的偏转板包括在同一表面上形成有两个光栅区域的透明板。第一光栅区域具有多个平行凹槽。第二光栅区域具有预定图案的多个凹槽。第一光栅区域中的凹槽的深度和/或占空比不同于第二光栅区域中的凹槽的深度和/或占空比。

6. 发明授权

US07819972B2 Method for growing silicon single crystal and method for manufacturing silicon wafer 有权
标题翻译：生长硅单晶的方法及其制造方法
公开(公告)号：US07819972B2
公开(公告)日：2010-10-26
申请号：US11356414
申请日：2006-02-17
申请人： Shuichi Inami , Nobumitsu Takase , Yasuhiro Kogure , Ken Hamada , Tsuyoshi Nakamura
发明人： Shuichi Inami , Nobumitsu Takase , Yasuhiro Kogure , Ken Hamada , Tsuyoshi Nakamura
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/04 , C30B15/14
摘要： In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.
摘要翻译：在生长硅单晶的方法中，通过Czochralski法生长硅单晶，在ASTM-F121 1979上具有12×1017至18×1017原子/ cm3的氧浓度。惰性气体和使用含有氢原子的气态物质作为用于生长单晶的气氛气体。在晶体生长期间控制硅单晶的温度，使得晶体中心部分处的熔点和其温度为1350℃之间的轴向热梯度Gc的比率Gc / Ge与轴向在其熔点和其温度为1350℃之间的晶体周边的热梯度Ge为1.1至1.4。晶体中心部分的轴向热梯度Gc为3.0〜3.5℃/ mm。

7. 发明申请

US20100018454A1 Method of producing single crystal 审中-公开
标题翻译：生产单晶的方法
公开(公告)号：US20100018454A1
公开(公告)日：2010-01-28
申请号：US12458410
申请日：2009-07-10
申请人： Ken Hamada , Hiroaki Taguchi , Kazuyuki Egashira
发明人： Ken Hamada , Hiroaki Taguchi , Kazuyuki Egashira
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , C30B15/20 , C30B15/203 , C30B29/06 , C30B35/00
摘要： After melting raw materials, a distance between a raw material melt surface and a heat-shielding member disposed so as to face to the melt surface is adjusted based on temporal changes in chamber inside conditions, such as the heater temperature at the time of completion of the seed crystal equilibration operation carried out after completion of the raw material melting procedure and/or lag time required for completion of the seed crystal equilibration operation following completion of the raw material melting procedure. As a result, single crystals can be produced efficiently and in high yield, and further, by controlling the crystal interior temperature gradient by modifying the distance between the melt surface and the heat-shielding member, it becomes possible to control the ratio V/G (V:pulling speed, G:crystal interior temperature gradient) to thereby produce single crystals free of crystal defects such as COPs and/or dislocation clusters.
摘要翻译：在原料熔化之后，基于室内条件的时间变化（例如，完成时的加热器温度）来调节原料熔体表面和设置成面对熔体表面的隔热部件之间的距离在完成原料熔化步骤后完成原料熔化步骤和/或完成晶种平衡操作所需的滞后时间之后进行晶种平衡操作。结果，可以有效且高产率地制造单晶，另外，通过改变熔融面和隔热构件之间的距离来控制晶体内部温度梯度，可以控制比率V / G （V：拉伸速度，G：晶体内部温度梯度），从而产生没有诸如COP和/或位错簇的晶体缺陷的单晶。

8. 发明申请

US20050022722A1 Method for pulling a single crystal 有权
标题翻译：拉单晶的方法
公开(公告)号：US20050022722A1
公开(公告)日：2005-02-03
申请号：US10923864
申请日：2004-08-24
申请人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
发明人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
IPC分类号： C30B15/26 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/20 , C30B15/30 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of changes in volume of a quartz crucible between batches and thermal deformation of the quartz crucible, so that high quality single crystals can be pulled. The apparatus has a reference reflector arranged inside an apparatus body, a level position measuring unit to measure an actual level position by detecting a mirror image position of the reference reflector reflected in the melt surface using a one-dimensional CCD camera arranged outside the apparatus body, a crucible ascent speed adjustment value calculating unit to calculate an adjustment value of the crucible ascent speed based on an output from the level position measuring unit, an adjustment value adding unit to add the adjustment value to the crucible ascent speed, and a level position controlling unit to control the level position in the crucible by controlling a motor for crucible lifting based on an output from the adjustment value adding means to control the crucible ascent speed.
摘要翻译：使用一种装置来拉动单晶，其中通过将熔体水平保持在规定位置的熔融水平，使得待生长的单晶的惰性气体流，装置主体中的压力和温度环境总是保持恒定尽管石英坩埚在批次之间的体积变化和石英坩埚的热变形，从而可以拉高品质的单晶。该装置具有布置在装置本体内的参考反射器，水平位置测量单元，用于通过使用布置在装置主体外部的一维CCD照相机检测反射在熔体表面中的参考反射体的镜像位置来测量实际水平位置坩埚上升速度调节值计算单元，用于根据来自水平位置测量单元的输出来计算坩埚上升速度的调节值;调节值添加单元，用于将调节值加到坩埚上升速度;以及水平位置控制单元，通过基于来自调节值相加装置的输出控制坩埚上升的电动机来控制坩埚上升速度来控制坩埚中的液位位置。

9. 发明授权

US07207187B2 Inverter-integrated motor for an automotive vehicle 失效
标题翻译：用于汽车的变频器一体化电动机
公开(公告)号：US07207187B2
公开(公告)日：2007-04-24
申请号：US10422958
申请日：2003-04-25
申请人： Kenji Funahashi , Ken Hamada , Hiroyuki Kawata , Yasuyuki Ohkouchi
发明人： Kenji Funahashi , Ken Hamada , Hiroyuki Kawata , Yasuyuki Ohkouchi
IPC分类号： F25D25/00 , F25D62/505 , F25D62/113 , F25D62/259
CPC分类号： F04B39/121 , F01C21/10 , F04B35/04 , F04B2203/0204 , F04C29/0085 , F04C2240/808 , F25B2400/077 , H02K5/225 , H02K11/33
摘要： A bus-bar integrated plate and outer frame section, arranged into a double-deck structure and having numerous bus bars molded with a resin molding plate portion, is provided as a wiring for connecting power switching elements and a smoothing capacitor, fixed on an outer surface of a cylindrical wall of a motor housing, to a printed circuit board serving as a control circuit.
摘要翻译：提供了布置成双层结构并具有由树脂成型板部分模制的多个汇流条的汇流条集成板和外框架部分，用于连接功率开关元件和平滑电容器的布线，固定在外部电动机壳体的圆柱形壁的表面连接到用作控制电路的印刷电路板。

10. 发明授权

US09284660B2 Apparatus of producing silicon single crystal and method of producing silicon single crystal 有权
标题翻译：硅单晶的制造装置及其制造方法
公开(公告)号：US09284660B2
公开(公告)日：2016-03-15
申请号：US13314503
申请日：2011-12-08
申请人： Keiichi Takanashi , Ken Hamada
发明人： Keiichi Takanashi , Ken Hamada
IPC分类号： C30B29/06 , C30B15/26
CPC分类号： C30B15/26 , C30B29/06 , Y10T117/1008
摘要： An apparatus of producing a silicon single crystal including: an imaging device; a heat shield that has a circular opening; a first operation unit that operates the imaging device and takes a real image of the heat shield and a mirror image of the heat shield reflected on a surface of the silicon melt, measures a spacing between the real image and the mirror image, and calculates a position of a melt-surface; a second operating unit that operates the imaging device and takes an image of a bright-zone in the vicinity of the solid-liquid interface, and calculates a position of the melt-surface based on the image of the bright zone; and a controlling unit that refers a data of the position of the silicon melt obtained by the first operation unit and the second operation unit, and controls the position of the silicon melt.
摘要翻译：一种制造单晶硅的装置，包括：成像装置; 具有圆形开口的隔热罩; 第一操作单元，操作成像装置并获取热屏蔽的真实图像和在硅熔体的表面上反射的热屏蔽的镜像，测量实像和镜像之间的间隔，并计算出熔体表面的位置; 第二操作单元，其操作所述成像装置并拍摄所述固液界面附近的亮区图像，并且基于所述亮区的图像来计算所述熔体表面的位置; 以及控制单元，其参考由第一操作单元和第二操作单元获得的硅熔体的位置的数据，并控制硅熔体的位置。

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