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1. 发明申请

US20070111532A1 PAA-based etchant, methods of using same, and resultant structures 有权
公开(公告)号：US20070111532A1
公开(公告)日：2007-05-17
申请号：US11600224
申请日：2006-11-16
申请人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

2. 发明授权

US07176041B2 PAA-based etchant, methods of using same, and resultant structures 有权
标题翻译：基于PAA的蚀刻剂，使用它的方法以及所得结构
公开(公告)号：US07176041B2
公开(公告)日：2007-02-13
申请号：US10976161
申请日：2004-10-29
申请人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
摘要翻译：湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率：（N掺杂Si）。这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

3. 发明申请

US20050169096A1 PAA- based etchant, methods of using same, and resultant structures 有权
标题翻译：基于PAA的蚀刻剂，使用它的方法和所得结构
公开(公告)号：US20050169096A1
公开(公告)日：2005-08-04
申请号：US10976161
申请日：2004-10-29
申请人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/308 , C09K13/08 , C23F1/24 , G11C8/02 , H01L21/306 , H01L21/3213 , H01L21/336 , H01L21/8238 , H01L21/8242 , H01L27/108 , H01L29/786
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
摘要翻译：湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率：（N掺杂Si）。这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

4. 发明申请

US20060246666A1 Method of fabricating flash memory with u-shape floating gate 审中-公开
标题翻译：用u形浮栅制造闪速存储器的方法
公开(公告)号：US20060246666A1
公开(公告)日：2006-11-02
申请号：US11410837
申请日：2006-04-26
申请人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
发明人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11543
摘要： A method of fabricating a flash memory having a U-shape floating gate is provided. The method includes forming adjacent isolation layers separated by a gap and forming a tunnel oxide layer in the gap. After a conductive layer is formed on the tunnel oxide layer to a thickness not to fill the gap, a polishing sacrificial layer is formed on the conductive layer. The sacrificial layer and the conductive layer on the isolation layers are removed, thereby forming a U-shape floating gate self-aligned in the gap, and concurrently forming a sacrificial layer pattern within an inner portion of the floating gate. Selected isolation layers are then recessed to expose sidewalls of the floating gate. The sacrificial layer pattern is then removed from the floating gate to expose an upper surface of the floating gate.
摘要翻译：提供一种制造具有U形浮动栅极的闪速存储器的方法。该方法包括形成由间隙隔开并在间隙中形成隧道氧化物层的相邻隔离层。在隧道氧化物层上形成导电层至不填充间隙的厚度之后，在导电层上形成抛光牺牲层。除去隔离层上的牺牲层和导电层，从而在间隙中形成自对准的U形浮动栅极，同时在浮栅的内部部分内形成牺牲层图案。然后将选定的隔离层凹入以露出浮动栅极的侧壁。然后从浮动栅极去除牺牲层图案以暴露浮动栅极的上表面。

5. 发明授权

US07709277B2 PAA-based etchant, methods of using same, and resultant structures 有权
标题翻译：基于PAA的蚀刻剂，使用它的方法以及所得结构
公开(公告)号：US07709277B2
公开(公告)日：2010-05-04
申请号：US11600224
申请日：2006-11-16
申请人： Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
摘要翻译：湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率：（N掺杂Si）。这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

6. 发明申请

US20060228890A1 Cleaning solution and method of forming a metal pattern for a semiconductor device using the same 审中-公开
标题翻译：清洗液和使用其形成半导体器件的金属图案的方法
公开(公告)号：US20060228890A1
公开(公告)日：2006-10-12
申请号：US11402028
申请日：2006-04-12
申请人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
发明人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
IPC分类号： C03C15/00 , H01L21/302 , B08B6/00 , C09K13/00
CPC分类号： H01L21/0206 , C09K13/08 , C23G1/10 , H01L21/02071
摘要： A cleaning solution includes acetic acid, an inorganic acid, a fluoride compound, and deionized water, and may further include a corrosion inhibitor, a chelating agent, or a combination thereof. The cleaning solution may be used in the formation of a metal pattern in which a metal film including ruthenium is formed on a surface of a substrate, and a portion of the metal film is dry-etched to form a metal film pattern. After dry-etching, the metal film pattern is cleaned with the cleaning solution to remove an etching by-product layer around the metal film pattern. The cleaning solution may also be used to remove an etching by-product layer around an oxide film pattern prior to dry-etching of the metal film.
摘要翻译：清洁溶液包括乙酸，无机酸，氟化物和去离子水，并且还可以包括腐蚀抑制剂，螯合剂或其组合。清洗液可用于形成在基材表面上形成包含钌的金属膜的金属图案，并且将金属膜的一部分干蚀刻以形成金属膜图案。在干蚀刻之后，用清洁溶液清洗金属膜图案以除去金属膜图案周围的蚀刻副产物层。在干蚀刻金属膜之前，还可以使用清洁溶液去除氧化膜图案周围的蚀刻副产物层。

7. 发明申请

US20110083807A1 Apparatus for Treating Wafers Using Supercritical Fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US20110083807A1
公开(公告)日：2011-04-14
申请号：US12973963
申请日：2010-12-21
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： C23F1/08
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

8. 发明申请

US20070051700A1 Composition for cleaning substrates and method of forming gate using the composition 审中-公开
标题翻译：用于清洁基材的组合物和使用该组合物形成浇口的方法
公开(公告)号：US20070051700A1
公开(公告)日：2007-03-08
申请号：US11444416
申请日：2006-06-01
申请人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Woo-gwan Shim , Jeong-nam Han
发明人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Woo-gwan Shim , Jeong-nam Han
IPC分类号： C23F1/00 , B44C1/22 , C09K13/00
CPC分类号： H01L21/02071 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D11/0047 , H01L21/0206 , H01L29/40117
摘要： Provided are a substrate cleaning composition including a fluoride compound, an inorganic acid, and deionized water, and a method of forming a gate using the same. The fluoride compound is one of HF, NH4F, and a combination thereof, and the inorganic acid is one of HNO3, HCI, HCIO4, H2SO4, or H5IO6. The substrate cleaning composition removes polymer by-products generated by etching a metal layer for forming a gate, but not other layers.
摘要翻译：提供了包含氟化物，无机酸和去离子水的基板清洗组合物，以及使用其形成栅极的方法。氟化合物是HF，NH 4 F及其组合中的一种，无机酸是HNO 3，HCl，HCIO 4， H 2 SO 2，或H 5 O 6 6，或H 5 O 6。基板清洁组合物除去通过蚀刻用于形成栅极的金属层而不是其它层而产生的聚合物副产物。

9. 发明申请

US20150162221A1 APPARATUS FOR TREATING WAFERS USING SUPERCRITICAL FLUID 审中-公开
标题翻译：使用超临界流体处理废水的设备
公开(公告)号：US20150162221A1
公开(公告)日：2015-06-11
申请号：US14580513
申请日：2014-12-23
申请人： Hyo-San Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-San Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： H01L21/67 , H01J37/32
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

10. 发明授权

US07857939B2 Apparatus for treating wafers using supercritical fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US07857939B2
公开(公告)日：2010-12-28
申请号：US11725829
申请日：2007-03-20
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： B67D5/54
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

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