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1. 发明申请

US20070051700A1 Composition for cleaning substrates and method of forming gate using the composition 审中-公开
标题翻译：用于清洁基材的组合物和使用该组合物形成浇口的方法
公开(公告)号：US20070051700A1
公开(公告)日：2007-03-08
申请号：US11444416
申请日：2006-06-01
申请人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Woo-gwan Shim , Jeong-nam Han
发明人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Woo-gwan Shim , Jeong-nam Han
IPC分类号： C23F1/00 , B44C1/22 , C09K13/00
CPC分类号： H01L21/02071 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D11/0047 , H01L21/0206 , H01L29/40117
摘要： Provided are a substrate cleaning composition including a fluoride compound, an inorganic acid, and deionized water, and a method of forming a gate using the same. The fluoride compound is one of HF, NH4F, and a combination thereof, and the inorganic acid is one of HNO3, HCI, HCIO4, H2SO4, or H5IO6. The substrate cleaning composition removes polymer by-products generated by etching a metal layer for forming a gate, but not other layers.
摘要翻译：提供了包含氟化物，无机酸和去离子水的基板清洗组合物，以及使用其形成栅极的方法。氟化合物是HF，NH 4 F及其组合中的一种，无机酸是HNO 3，HCl，HCIO 4， H 2 SO 2，或H 5 O 6 6，或H 5 O 6。基板清洁组合物除去通过蚀刻用于形成栅极的金属层而不是其它层而产生的聚合物副产物。

2. 发明申请

US20060246666A1 Method of fabricating flash memory with u-shape floating gate 审中-公开
标题翻译：用u形浮栅制造闪速存储器的方法
公开(公告)号：US20060246666A1
公开(公告)日：2006-11-02
申请号：US11410837
申请日：2006-04-26
申请人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
发明人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11543
摘要： A method of fabricating a flash memory having a U-shape floating gate is provided. The method includes forming adjacent isolation layers separated by a gap and forming a tunnel oxide layer in the gap. After a conductive layer is formed on the tunnel oxide layer to a thickness not to fill the gap, a polishing sacrificial layer is formed on the conductive layer. The sacrificial layer and the conductive layer on the isolation layers are removed, thereby forming a U-shape floating gate self-aligned in the gap, and concurrently forming a sacrificial layer pattern within an inner portion of the floating gate. Selected isolation layers are then recessed to expose sidewalls of the floating gate. The sacrificial layer pattern is then removed from the floating gate to expose an upper surface of the floating gate.
摘要翻译：提供一种制造具有U形浮动栅极的闪速存储器的方法。该方法包括形成由间隙隔开并在间隙中形成隧道氧化物层的相邻隔离层。在隧道氧化物层上形成导电层至不填充间隙的厚度之后，在导电层上形成抛光牺牲层。除去隔离层上的牺牲层和导电层，从而在间隙中形成自对准的U形浮动栅极，同时在浮栅的内部部分内形成牺牲层图案。然后将选定的隔离层凹入以露出浮动栅极的侧壁。然后从浮动栅极去除牺牲层图案以暴露浮动栅极的上表面。

3. 发明申请

US20110083807A1 Apparatus for Treating Wafers Using Supercritical Fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US20110083807A1
公开(公告)日：2011-04-14
申请号：US12973963
申请日：2010-12-21
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： C23F1/08
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

4. 发明授权

US08951383B2 Apparatus for treating wafers using supercritical fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US08951383B2
公开(公告)日：2015-02-10
申请号：US12973963
申请日：2010-12-21
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： C23F1/08 , H01L21/67
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

5. 发明申请

US20150162221A1 APPARATUS FOR TREATING WAFERS USING SUPERCRITICAL FLUID 审中-公开
标题翻译：使用超临界流体处理废水的设备
公开(公告)号：US20150162221A1
公开(公告)日：2015-06-11
申请号：US14580513
申请日：2014-12-23
申请人： Hyo-San Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-San Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： H01L21/67 , H01J37/32
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

6. 发明授权

US07857939B2 Apparatus for treating wafers using supercritical fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US07857939B2
公开(公告)日：2010-12-28
申请号：US11725829
申请日：2007-03-20
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： B67D5/54
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

7. 发明申请

US20080029159A1 Apparatus and method for treating wafers using supercritical fluid 有权
标题翻译：使用超临界流体处理晶片的设备和方法
公开(公告)号：US20080029159A1
公开(公告)日：2008-02-07
申请号：US11725829
申请日：2007-03-20
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： B67D5/54
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

8. 发明申请

US20100267225A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20100267225A1
公开(公告)日：2010-10-21
申请号：US12385658
申请日：2009-04-15
申请人： Hyo-san Lee , Bo-un Yoon , Kun-tack Lee , Dae-hyuk Kang , Jeong-nam Han , Jung-jae Myung , Hyung-pyo Hong , Hun-pyo Hong
发明人： Hyo-san Lee , Bo-un Yoon , Kun-tack Lee , Dae-hyuk Kang , Jeong-nam Han , Jung-jae Myung , Hyung-pyo Hong , Hun-pyo Hong
IPC分类号： H01L21/265 , H01L21/306
CPC分类号： H01L21/31133 , G03F7/423 , H01L21/0206 , H01L21/02071
摘要： A method of manufacturing a semiconductor device, the method including forming a photoresist film on a substrate, and removing the photoresist film from the substrate using a composition that includes a sulfuric acid solution, a hydrogen peroxide solution, and a corrosion inhibitor.
摘要翻译：一种制造半导体器件的方法，所述方法包括在衬底上形成光致抗蚀剂膜，并且使用包含硫酸溶液，过氧化氢溶液和腐蚀抑制剂的组合物从衬底去除光致抗蚀剂膜。

9. 发明授权

US09728535B2 Methods of fabricating semiconductor devices including fin-shaped active regions 有权
公开(公告)号：US09728535B2
公开(公告)日：2017-08-08
申请号：US15058664
申请日：2016-03-02
申请人： Young-sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
发明人： Young-sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
IPC分类号： H01L21/76 , H01L27/088 , H01L21/762 , H01L21/8234 , H01L21/84 , H01L29/06
CPC分类号： H01L21/76229 , H01L21/2652 , H01L21/763 , H01L21/823431 , H01L21/823481 , H01L21/845 , H01L27/0886 , H01L29/0649 , H01L29/0657
摘要： A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

10. 发明申请

US20160181243A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING FIN-SHAPED ACTIVE REGIONS 审中-公开
标题翻译：制造精细形状活性区域的半导体器件的方法
公开(公告)号：US20160181243A1
公开(公告)日：2016-06-23
申请号：US15058664
申请日：2016-03-02
申请人： Young-sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
发明人： Young-sang Youn , Myung-geun Song , Ji-hoon Cha , Jae-jik Baek , Bo-un Yoon , Jeong-nam Han
IPC分类号： H01L27/088 , H01L29/06
CPC分类号： H01L21/76229 , H01L21/2652 , H01L21/763 , H01L21/823431 , H01L21/823481 , H01L21/845 , H01L27/0886 , H01L29/0649 , H01L29/0657
摘要： A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.
摘要翻译：一种制造半导体器件的方法包括：通过在衬底中形成以第一间距重复的多个第一器件隔离沟槽来形成多个鳍片，形成从第一器件隔离的顶表面突出的多个翅片型有源区域通过在所述多个第一器件隔离沟槽中形成所述第一器件隔离层，通过蚀刻所述衬底和所述第一器件隔离层的一部分来形成以与所述第一间距不同的间距隔离沟槽的多个第二器件，在所述多个第二器件隔离沟槽中的第二器件隔离层，以便形成彼此分离的多个鳍式有源区域组，其间具有第二器件隔离层。

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