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    • 3. 发明公开
    • 급속 열처리를 이용한 규칙화된 FePt 다층박막의제조방법
    • 通过快速热退火制造多层薄膜薄膜的制造方法
    • KR1020090092988A
    • 2009-09-02
    • KR1020080018274
    • 2008-02-28
    • 창원대학교 산학협력단
    • 이찬규누엔단펑
    • G11B5/84
    • G11B5/851G11B5/653G11B5/66G11B2005/0021
    • A manufacturing method of a regular FePt multi-layered thin film using a rapid thermal process capable of accelerating the phase transformation of the FePt multi-layered thin film is provided to increase coercive force under the rapid thermal process after manufacturing FePt multilayer. A manufacturing method of a regular FePt multi-layered thin film using a rapid thermal process is as follows. The FePt multilayer is manufactured by using the DC sputtering(ST1). The rapid thermal processing is performed about the manufactured FePt multilayer(ST2). The FePt multi-layered thin film is manufactured by the DC magnetron sputtering apparatus. The DC sputtering performs the initial vacuum drawing 1x10-8~5x10-8 torr. The evaporation is performed after the injection of the Ar gas while maintaining the degree of vacuum with 3~10 mtorr. The thin-film substrate used during the DC sputtering performance comprises the silicon substrate.
    • 提供使用能够加速FePt多层薄膜的相变的快速热处理的规则FePt多层薄膜的制造方法,以在制造FePt多层之后在快速热处理下增加矫顽力。 使用快速热处理的规则FePt多层薄膜的制造方法如下。 通过使用DC溅射(ST1)制造FePt多层。 对制造的FePt多层(ST2)进行快速热处理。 FePt多层薄膜由DC磁控溅射装置制造。 DC溅射进行初始真空吸附1×10-8〜5×10-8乇。 在注入Ar气体之后进行蒸发,同时保持3〜10mtorr的真空度。 在DC溅射性能期间使用的薄膜基板包括硅基板。
    • 9. 发明公开
    • 자기 기록 장치
    • 磁记录装置
    • KR1020020039111A
    • 2002-05-25
    • KR1020000069017
    • 2000-11-20
    • 학교법인고려중앙학원
    • 이성래김영근양상현
    • G11B5/62
    • G11B5/653B32B15/04G11B5/00
    • PURPOSE: A magnetic recording device is provided to add Zr to a FePt thin film used as an information storage unit, so as to improve an information storage density. And the device is provided to increase a coersive force and prevent the increase of a crystal size upon heat treatment of the FePt thin film. CONSTITUTION: An information recording medium has an information recording unit for recording information and an information storage unit in which information is magnetically recorded by the information recording unit. The information storage unit includes a FePt-Zr thin film layer. In the information storage unit, a substrate is arranged. A FePt-Zr magnetic layer is formed on an upper surface of the substrate. A protective layer is formed on an upper part of the FePt-Zr magnetic layer. A buffer layer is interposed between the substrate and the FePt-Zr magnetic layer. And the protective layer is an oxidation preventing layer for preventing the oxidation of the FePt-Zr magnetic layer and is a lubricating layer for reducing the friction with the information recording unit upon contact.
    • 目的:提供磁记录装置以将Zr添加到用作信息存储单元的FePt薄膜中,从而提高信息存储密度。 并且提供该装置以增加凝聚力并防止在FePt薄膜的热处理时晶体尺寸的增加。 构成:信息记录介质具有用于记录信息的信息记录单元和由信息记录单元磁记录信息的信息存储单元。 信息存储单元包括FePt-Zr薄膜层。 在信息存储单元中,布置基板。 FePt-Zr磁性层形成在基板的上表面上。 在FePt-Zr磁性层的上部形成有保护层。 在衬底和FePt-Zr磁性层之间插入缓冲层。 并且保护层是防止FePt-Zr磁性层氧化的防氧化层,并且是用于在接触时降低与信息记录单元摩擦的润滑层。