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1. 发明公开

KR1020150059453A 나노안테나 배열의 제조 방법, 나노안테나 배열 칩 및 리소그래피용 구조물 有权
标题翻译：制作纳米线阵列的方法，纳米线阵列和结构
公开(公告)号：KR1020150059453A
公开(公告)日：2015-06-01
申请号：KR1020130143068
申请日：2013-11-22
申请人： 한국과학기술연구원
发明人： 이경석 , 김원목 , 이택성 , 이욱성 , 정두석 , 김인호
IPC分类号： G02B5/00
CPC分类号： G02B5/008 , B82Y15/00 , B82Y40/00 , G01N21/554 , G02B5/0278 , G03F7/2014 , G03F7/70375
摘要： 나노안테나배열제조방법은기판위에레지스트층을형성하는단계; 상기레지스트층위에유전체마이크로구조체배열을포함하는포커싱층을형성하는단계; 선형디퓨저를이용하여빛을일 방향으로산란시키는단계; 상기선형디퓨저에의해산란된빛을상기포커싱층및 상기레지스트층에조사시킴으로써상기레지스트층에비등방성의패턴을형성하는단계; 상기기판및 상기패턴이형성된레지스트층에플라즈모닉공진특성을갖는물질을증착하는단계; 및상기레지스트층및 상기레지스트층상에증착된물질을제거함으로써상기기판상에나노안테나배열을형성하는단계를포함할수 있다. 상기선형디퓨저에의한빛의산란각도및 상기유전체마이크로구조체의크기는형성하고자하는패턴의종횡비에기초하여결정된다.
摘要翻译：纳米天线阵列的制造方法包括：在基板上形成抗蚀剂层的步骤; 在抗蚀剂层上形成包括电介质微结构阵列的聚焦层的步骤; 通过使用线性漫射器在一个方向上漫射光的步骤; 通过用线性扩散器漫射的光照射聚焦层和抗蚀剂层，在抗蚀剂层上形成各向异性图案的步骤; 在衬底上蒸发具有等离子体共振特性的材料和形成图案的抗蚀剂层的步骤; 以及通过去除抗蚀剂层和沉积在抗蚀剂层上的材料在衬底上形成纳米天线阵列的步骤。基于正在形成的图案的纵横比来确定通过线性漫射器的光的散射角和电介质微结构的尺寸。根据本发明的纳米天线阵列的制造方法，能够在2-20μm的波长区域的红外波段中显示等离子体共振特性的红外线纳米天线阵列，其中，固有振动模式存在的大多数分子可以容易地形成。

2. 发明授权

KR101303500B1 2차원 광자 리소그래피 및 나노임프린트를 이용한 서브마이크론 3차원 구조물 제조용 3차원 몰드 및 그를 이용한 3차원 구조물 제조방법 失效
标题翻译：使用3D模型制作二维光刻贴图和纳米压印三维结构制造工艺的三维模型三维模具
公开(公告)号：KR101303500B1
公开(公告)日：2013-09-09
申请号：KR1020107020686
申请日：2009-11-23
申请人： 헬리오스 어플라이드 시스템스 피티이 엘티디
发明人： 칸,쉬이-헤릉
IPC分类号： G03F1/68 , G03F7/24 , G03F7/40 , B29C33/38
CPC分类号： B29D11/00365 , B82Y10/00 , B82Y40/00 , G02B3/04 , G02B3/12 , G03F7/0002 , G03F7/2053 , G03F7/70375
摘要： 고효율 및 저비용 서브마이크론 3D 구조물을 제조하기 위한 3D 몰드의 제작방법을 개시한다. 이 방법은 2-광자 레이저 및 3D 기록 기술을 통합 이용하여 3D 구조물의 각 층의 3D 몰드를 형성하며 이어서 나노임프린트 기술을 이용하여 상기 층의 3D 몰드로부터 3D 구조물의 각 층의 고분자필름 시트를 형성한다. 고분자필름 시트의 각 층은 다시 서브마이크론 3D 구조물로 제작된다. 고효율 저비용 서브마이크론 3D 구조물의 각 층의 3D 몰드는 추가로 마스터 몰드 제작에 이용되며 이 마스터 몰드는 3D 구조물의 각 층의 고분자필름 시트를 형성함으로써 서브마이크론 3D 구조물을 구성한다. 상기 공정의 다양한 응용분야에 대해서도 기술한다.
摘要翻译：公开了一种制造3D模具以制造高通量和低成本亚微米3D结构产品的工艺。该过程集成了使用双光子激光平版印刷和3D写入技术来制作3D结构产品的每一层的3D模具，然后使用纳米压印形成来自所述3D的3D结构的每层的聚合物膜片该层的模具。然后将各层聚合物薄膜制成亚微米3D结构产品。高通量和低成本亚微米3D结构产品的每一层的3D模具进一步用于制造主模具，然后将其用于形成3D结构的每层的聚合物膜片，以制造子 -micron 3D结构产品。还公开了使用该方法的应用。

3. 发明公开

KR1020120100209A 마스크리스 노광 장치와 이를 이용한 스티칭 노광 방법 无效
标题翻译：无害曝光装置和使用该装置接触曝光的方法
公开(公告)号：KR1020120100209A
公开(公告)日：2012-09-12
申请号：KR1020110018956
申请日：2011-03-03
申请人： 삼성전자주식회사
发明人： 김자열 , 장상돈
IPC分类号： G03F7/20
CPC分类号： G03F7/2051 , G03F1/44 , G03F7/70275 , G03F7/70291 , G03F7/70308 , G03F7/70375 , G03F7/70633 , G03F7/70791
摘要： PURPOSE: A maskless exposure apparatus and a stitching exposure method using the same are provided to substantially omit the physically overlapped region between exposure heads using a virtual stitching line. CONSTITUTION: A maskless exposure apparatus includes a substrate, a plurality of exposure heads, a beam measuring part, a controlling part, and a roughness correcting part. A plurality of exposure heads emits exposure beam in the form of beam spot array to a substrate such that patterns are exposed on the substrate. The beam measuring part measures the beam data of the exposure beam. The controlling part defines the overlapped region of the exposure heads based on the measured beam data and defines a range in which a virtual stitching line(L) exists based on the overlapped region. The roughness correcting part corrects the roughness of the virtual stitching line.
摘要翻译：目的：提供无掩模曝光装置和使用其的拼接曝光方法，以使用虚拟缝合线基本上省略曝光头之间的物理重叠区域。构成：无掩模曝光装置包括基板，多个曝光头，光束测量部，控制部和粗糙度校正部。多个曝光头将光束阵列形式的曝光光束发射到衬底，使得图案暴露在衬底上。光束测量部分测量曝光光束的光束数据。控制部分基于测量的光束数据来定义曝光头的重叠区域，并且基于重叠区域定义存在虚拟缝合线（L）的范围。粗糙度校正部修正虚拟缝合线的粗糙度。

4. 发明公开

KR1020100102451A 반도체 소자의 미세 패턴 형성 방법 有权
标题翻译：在半导体器件中形成精细图案的方法
公开(公告)号：KR1020100102451A
公开(公告)日：2010-09-24
申请号：KR1020090020837
申请日：2009-03-11
申请人： 주식회사 동진쎄미켐
发明人： 이준경 , 이정열 , 김정식 , 장유진 , 이재우 , 김덕배 , 김재현
IPC分类号： H01L21/027
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0752 , G03F7/70466 , H01L21/0273 , G03F7/2051 , G03F7/70375
摘要： PURPOSE: A method for forming the fine pattern of a semiconductor device is provided to reduce the number of processes by forming the pattern without an organic spacer or an inorganic spacer. CONSTITUTION: A layer to be etched is formed on a semiconductor substrate(11). A first photo-resist pattern(17) is formed on the semiconductor substrate. An interlayer mirror film(21) is formed on the first photo-resist pattern by coating an interlayer mirror film composition. A second photo-resist film is formed on the interlayer mirror film. A second photo-resist pattern is formed between spaces of the first photo-resist pattern by the diffused reflection of the interlayer mirror film.
摘要翻译：目的：提供一种用于形成半导体器件的精细图案的方法，以通过形成图案而不使用有机间隔物或无机间隔物来减少处理次数。构成：在半导体衬底（11）上形成待蚀刻的层。第一光刻胶图案（17）形成在半导体衬底上。通过涂覆层间镜膜组合物在第一光致抗蚀剂图案上形成层间镜膜（21）。在层间镜膜上形成第二光致抗蚀剂膜。通过层间反射膜的漫反射，在第一光致抗蚀剂图案的间隔之间形成第二光刻胶图案。

5. 发明公开

KR1020100092991A 원자현미경용 리소그래피 시스템 및 방법과 그 시스템에서의 리소그래피용 입력신호 생성장치 및 방법 有权
标题翻译：原子力显微镜和用于生成输入信号的图像的系统和方法用于其图像
公开(公告)号：KR1020100092991A
公开(公告)日：2010-08-24
申请号：KR1020090011068
申请日：2009-02-11
申请人： 에스엔유 프리시젼 주식회사
发明人： 최창선 , 한승헌 , 한승진
IPC分类号： G03F7/20 , G01Q60/02 , B82B3/00
CPC分类号： G03F7/2014 , G01Q10/04 , G01Q60/38 , G03F7/0002 , G03F7/70375 , G03F9/7061 , H01L21/0274
摘要： PURPOSE: A lithography system for an atomic force microscope, and a forming method of an input signal for a lithography are provided to prevent the electric charging effect generated on a substrate when applying a step-dc type electrical signal, and to secure the high resolution of an image. CONSTITUTION: A lithography system for an atomic force microscope comprises the following: a signal generating unit(310) converting an image into a predetermined voltage value or current value; a function generator(320) generating an electrical signal in an alternating current shape to output; and an input signal generating unit(330) generating a step-AC type electrical signal including a current value obtained by multiplying the voltage value or current value from the signal generating unit and the current value from the function generator, and supplying the value to the atomic force microscope(340).
摘要翻译：目的：提供用于原子力显微镜的光刻系统和用于光刻的输入信号的形成方法，以防止在施加步进直流型电信号时在基板上产生的充电效应，并且确保高分辨率的图像。构成：用于原子力显微镜的光刻系统包括：将图像转换成预定电压值或当前值的信号产生单元（310）; 功能发生器（320），产生交流形状的电信号以输出; 以及输入信号生成单元（330），其生成包括通过将来自所述信号发生单元的电压值或电流值与来自所述函数发生器的当前值相乘而获得的电流值的步进AC电信号，并将该值提供给原子力显微镜（340）。

6. 发明公开

KR1020100081474A 원자 힘 현미경 리소그래피를 이용한 금속 나노 패턴의 제조 방법 有权
标题翻译：使用原子力显微镜光刻制备金属纳米材料的方法
公开(公告)号：KR1020100081474A
公开(公告)日：2010-07-15
申请号：KR1020090000728
申请日：2009-01-06
申请人： 한양대학교 산학협력단
发明人： 이해원 , 이조원 , 권광민 , 유재범
IPC分类号： H01L21/027 , B82Y40/00
CPC分类号： G03F7/70375 , G03F7/165 , G03F7/2051
摘要： PURPOSE: A method for preparing metal nano-patterns using an atomic is provided to effectively form a metal nano pattern on a substrate corresponding to a probe of an atomic microscope by forming a resistor film after forming organic intermediate layer. CONSTITUTION: The surface of a substrate is reformed to a negative ion(S10). An organic compound intermediate layer is formed in the reformed substrate surface(S20). The resist including the organic-metallic compound is spread on the organic compound intermediate layer to form a resist film(S30). A voltage is applied between the probe of an atomic force microscope and the substrate to form a nano-pattern on the surface of the substrate(S40). The resist film is removed from the substrate in which the metal nano pattern is formed(S50).
摘要翻译：目的：提供使用原子制备金属纳米图案的方法，通过在形成有机中间层之后形成电阻膜，在对应于原子显微镜的探针的基板上有效形成金属纳米图案。构成：将基板的表面重新形成负离子（S10）。在重整基板表面中形成有机化合物中间层（S20）。将包含有机金属化合物的抗蚀剂铺展在有机化合物中间层上以形成抗蚀剂膜（S30）。在原子力显微镜的探针和衬底之间施加电压以在衬底的表面上形成纳米图案（S40）。从其中形成金属纳米图案的基板去除抗蚀剂膜（S50）。

7. 发明公开

KR1020070078702A 미세 구조체의 제조 방법, 제조 장치, 및 디바이스 无效
标题翻译：制造微结构的方法和装置及其制造的器件
公开(公告)号：KR1020070078702A
公开(公告)日：2007-08-01
申请号：KR1020070007449
申请日：2007-01-24
申请人： 세이코 엡슨 가부시키가이샤
发明人： 아마코준
IPC分类号： B23K26/06 , B23K26/064 , H01L21/027
CPC分类号： G03B21/625 , G03F7/70375
摘要： A method and an apparatus for manufacturing a microstructure, which can form a desired micro-pattern with high throughput and high reproducibility on the surface or inner part of a machined body without influencing a material or physical properties of the machined body, and a device that is obtained by the method for manufacturing an excellent microstructure are provided. A method for manufacturing a microstructure comprises the processes of: dividing an incident laser beam into a plurality of diffracted beams by using a diffractive optical element; condensing the divided plurality of diffracted beams into diffracted beams parallel to each other by using a telecentric lens; causing each of the parallel diffracted beams to perpendicularly enter an axicon collection comprised of a plurality of axicons arranged in an array shape such that the center of each diffracted beam is conformable with the center of each axicon, thereby forming a plurality of Bessel beams in an array shape; and irradiating the plurality of array shaped Bessel beams onto a machined body. An apparatus(10) for manufacturing a microstructure comprises: a diffractive optical element(14) for dividing an incident laser beam into a plurality of diffracted beams; a telecentric lens(15) for condensing the divided plurality of diffracted beams into diffracted beams parallel to each other; and an axicon collection(16) comprised of a plurality of diffractive axicons(6) arranged in an array shape.
摘要翻译：一种用于制造微结构的方法和装置，其可以在不影响加工体的材料或物理性质的情况下在加工体的表面或内部上形成具有高生产能力和高再现性的所需微图案，以及装置通过提供优异的微结构的制造方法得到。一种用于制造微结构的方法包括以下处理：通过使用衍射光学元件将入射激光束分成多个衍射光束; 通过使用远心透镜将分割的多个衍射光束聚焦成彼此平行的衍射光束; 使得每个平行的衍射光束垂直地进入由阵列形状排列的多个轴向构成的旋转三聚体集合，使得每个衍射光束的中心与每个三角锥的中心一致，由此形成多个贝塞尔光束阵列形状并将多个阵列形状的贝塞尔光束照射到机加工体上。用于制造微结构的装置（10）包括：用于将入射激光束分成多个衍射光束的衍射光学元件（14）; 用于将分割的多个衍射光束会聚到彼此平行的衍射光束的远心透镜（15）; 以及由排列成阵列形状的多个衍射轴（6）组成的旋转轴集合（16）。

8. 发明公开

KR1020010013080A 리소그래피 시스템 失效
标题翻译：光刻系统
公开(公告)号：KR1020010013080A
公开(公告)日：2001-02-26
申请号：KR1019997011059
申请日：1998-05-25
申请人： 마퍼 리쏘그라피 아이피 비.브이.
发明人： 크루이트피터
IPC分类号： G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70058 , G03F7/70358 , G03F7/70375 , H01J37/3175 , H01J2237/31777
摘要： Lithography system comprising a light source producing a light beam directed to a mask (3) located in a mask level and an optical demagnifier (4-6) for demagnifying by a factor and focusing the beam. The light beam is focused on a converter element (8) for converting said beam in a further beam having a smaller wavelength than UV light. The beam at the mask level has a transversal size smaller than the desired resolution at the object level multiplied by the demagnifying factor.
摘要翻译：平版印刷系统包括产生朝向掩模级的掩模（3）的光束的光源和用于通过因子进行缩小并聚焦该光束的光学去磁器（4-6）。光束聚焦在转换器元件（8）上，用于将波束转换成具有比UV光更小的波长的另外的光束。掩模级别的光束的横向尺寸小于物体等级乘以缩小因子的期望分辨率。

9. 发明授权

KR100183038B1 개선된 스테레오리소그래피 성형기술 失效
标题翻译：改进的现场施工技术
公开(公告)号：KR100183038B1
公开(公告)日：1999-05-15
申请号：KR1019920701010
申请日：1990-10-30
申请人： 3디 시스템즈 인코오퍼레이티드
发明人： 폴프랑시즈제이콥스 , 찰스윌리암후울 , 데니스롤레트스멜리 , 조셉월터엘리슨
IPC分类号： B29C35/08
CPC分类号： G03F7/70375 , B29C64/135 , B29C64/40 , B29C67/02 , G03F7/0037 , G05B2219/49013
摘要： 본발명은부품의상향및 하향형상이상에스킨층을제공하는것을포함하는스테레오리소그래피에의한부품성형방법과, 노출벡터의교차점에서하향영역의과노출을피하는방법및 스킨두께를결정하는방법에관한것이다.
摘要翻译：本发明涉及一种确定部分根据所述立体光刻成型的方法，包括在至少上下的部件的形状，以及如何避免在曝光矢量的交点与皮肤厚度露出医疗向下区域提供皮肤层的方法。

10. 发明授权

KR101778074B1 후퇴된 지지부 피처를 갖는 척 시스템 有权
标题翻译：具有缩回支撑功能的卡盘系统
公开(公告)号：KR101778074B1
公开(公告)日：2017-09-26
申请号：KR1020117030438
申请日：2010-07-02
申请人： 캐논 나노테크놀로지즈 인코퍼레이티드
发明人： 가나파티서브라마니안마하데반 , 메이슬마리오조한네스 , 팡가아비나시 , 최병진
IPC分类号： G03F7/00 , B82Y40/00 , B82Y10/00 , B25B11/00 , H01L21/683
CPC分类号： G03F7/7035 , B25B11/005 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/703 , G03F7/70375
摘要： 임프린트리소그래피에서, 템플레이트척 상의후퇴된지지부는그 위에위치된템플레이트의형상을변경시켜나노임프린트리소그래피공정에서테플레이트의외부가장자리의조기하향편향의최소화및/또는제거를제공한다.
摘要翻译：在压印光刻缩回支撑在模板卡盘部以改变在其上的模板位置的形状，以提供在纳米压印光刻工艺轮辋板的外边缘的早期向下偏转的最小化和/或消除。

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