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1. 发明公开

KR1020170095129A 다결정 실리콘 및 다결정 실리콘의 선별 방법 审中-实审
标题翻译：多晶硅和多晶硅的选择方法
公开(公告)号：KR1020170095129A
公开(公告)日：2017-08-22
申请号：KR1020170015292
申请日：2017-02-03
申请人： 신에쓰 가가꾸 고교 가부시끼가이샤
发明人： 미야오슈이치 , 네쓰시게요시
IPC分类号： C01B33/02 , B07B13/00
CPC分类号： G01B21/30 , C01B33/02 , C01B33/035 , C01P2004/04 , C01P2006/90 , C23C16/0236 , C30B13/00 , C30B15/00 , C30B29/06 , C30B35/007 , G01Q30/20 , H01L21/76254
摘要： [과제] 단결정실리콘을안정되게높은수율로제조하기위해서적합한다결정실리콘을, 비교적간편한수법으로선택하는수법을제공하는것. [해결수단] 본발명에서는, 채취한판상시료의표면을원자간력현미경(AFM)에의해표면거칠기를측정했을때에, 표면최대거칠기 Rpv(Peak-to-Valley)의값이 5000nm 이하, 산술평균거칠기 Ra의값이 600nm 이하, 또한제곱평균제곱근거칠기 Rq의값이 600nm 이하인다결정실리콘을단결정실리콘의제조용원료로한다.
摘要翻译： [问题]提供一种通过相对简单的方法选择合适的多晶硅以稳定和高产率生产单晶硅的方法。 [解决问题的手段]在本发明中，采取了一个当所述板状样品测量通过原子力显微镜（AFM）表面粗糙度的表面，表面最大粗糙度RPV（峰 - 谷）uigap是5000nm的或更小，的算术平均值的粗糙度Ra uigap是600nm或者更小，并且根均方粗糙度Rq uigap 600nm或者更小，并且多晶硅作为原料制造单晶硅。

2. 发明公开

KR1020110081155A 루테늄 금속캡층을 형성하는 반도체 디바이스 형성 방법 有权
标题翻译：形成金属箔层的方法
公开(公告)号：KR1020110081155A
公开(公告)日：2011-07-13
申请号：KR1020117006624
申请日：2009-09-29
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 미즈노시게루 , 세리오프랭크엠 , 이시자카다다히로
IPC分类号： H01L21/28
CPC分类号： H01L21/76814 , C23C16/0236 , C23C16/16 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76826 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76864
摘要： 구리(Cu) 금속에서의일렉트로마이그레이션및 스트레스마이그레이션을개선하기위하여, 반도체디바이스에루테늄(Ru) 금속을증착시키기위한방법이제공된다. 본발명의실시예는, NH(x≤3) 라디칼과 H 라디칼에의해금속층과로우-k 유전체재료를갖는패턴형성기판을처리하는처리단계를포함하여, 로우-k 유전체재료에대하여금속층상에 Ru 금속캡층을선택적으로형성하는것을개선시킨다.

3. 发明公开

KR1020090026354A 에피택시 챔버에서의 기판의 선-세정 방법 无效
标题翻译：外壳中基体的预清洗
公开(公告)号：KR1020090026354A
公开(公告)日：2009-03-12
申请号：KR1020097002030
申请日：2007-06-29
申请人： 어플라이드 머티어리얼스, 인코포레이티드
发明人： 김,이환 , 바투스,쟝알. , 워싱턴,로리 , 사모일오브,아르카디이 , 조자지,알리
IPC分类号： H01L21/302
CPC分类号： C23C16/0236 , C30B25/02 , C30B29/52
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.
摘要翻译：公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 抽空处理室以实现腔室中的减压; 并在减压下处理衬底表面。然后使用外延沉积在衬底表面上形成外延层。

4. 发明公开

KR1020090006178A 에피택셜 필름 형성을 위한 클러스터 툴 有权
标题翻译：外源膜形成的集合工具
公开(公告)号：KR1020090006178A
公开(公告)日：2009-01-14
申请号：KR1020087027246
申请日：2007-04-06
申请人： 어플라이드 머티어리얼스, 인코포레이티드
发明人： 사모일로브,아르카디이,브이.
IPC分类号： H01L21/20 , H01L21/02 , C30B23/02 , C23C16/00
CPC分类号： C23C16/54 , C23C16/0236 , C23C16/24 , C30B25/02 , C30B29/06
摘要： Systems, methods, and apparatus are provided for using a cluster tool to pre-clean a substrate in a first processing chamber utilizing a first gas prior to epitaxial film formation, transfer the substrate from the first processing chamber to a second processing chamber through a transfer chamber under a vacuum, and form an epitaxial layer on the substrate in the second processing chamber without utilizing the first gas. Numerous additional aspects are disclosed.
摘要翻译：提供了系统，方法和装置，用于使用簇工具，在外延膜形成之前利用第一气体在第一处理室中预清洁衬底，通过转移将衬底从第一处理室转移到第二处理室在第二处理室内的基板上形成外延层，而不用第一气体。公开了许多附加方面。

5. 发明公开

KR1020080103068A 성막 장치의 시즈닝 방법 失效
标题翻译：分析成膜装置的方法
公开(公告)号：KR1020080103068A
公开(公告)日：2008-11-26
申请号：KR1020087022176
申请日：2007-02-19
申请人： 미츠비시 쥬고교 가부시키가이샤
发明人： 시마즈다다시 , 가와노유이치
IPC分类号： C23C16/44
CPC分类号： C23C16/0236 , C23C16/029 , C23C16/4404 , C23C16/4405 , H01J37/32862
摘要： A method of seasoning a film-forming apparatus in which a silicon nitride film is formed on a base placed in a treatment vessel. The method is conducted for diminishing particles in the apparatus. The method comprises subjecting the treatment vessel to plasma cleaning to remove a film deposited on the inner wall thereof (step S1), subsequently depositing an amorphous silicon film (step S2), depositing thereon a silicon nitride film in which the nitrogen content gradually increases in the thickness direction (step S3), and keeping the inside of the treatment vessel being filled with a rare-gas plasma until film formation on the base is initiated (step S4).
摘要翻译：调节成膜装置的方法，其中在放置在处理容器中的基底上形成氮化硅膜。该方法用于减少装置中的颗粒。该方法包括使处理容器进行等离子体清洗以除去沉积在其内壁上的膜（步骤S1），随后沉积非晶硅膜（步骤S2），在其上沉积氮含量逐渐增加的氮化硅膜厚度方向（步骤S3），并且保持处理容器的内部填充有稀有气体等离子体直到在基底上形成膜（步骤S4）。

6. 发明公开

KR1020030083740A 박막 형성 방법 및 박막 형성 장치 失效
公开(公告)号：KR1020030083740A
公开(公告)日：2003-10-30
申请号：KR1020037012079
申请日：2002-03-14
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 야마사키히데아키 , 아리마스스무 , 가와노유미코
IPC分类号： H01L21/205
CPC分类号： H01L28/65 , C23C16/0218 , C23C16/0236 , C23C16/18 , C23C16/452 , C23C16/45523 , H01L21/3105 , H01L21/31612 , H01L28/55 , H01L28/60 , H01L28/90
摘要： 본 발명에 따라, 반도체 기판(101)은 소정의 처리 용기에 배치되고, 예를 들어 플라즈마로의 전환에 의해 활성화된 산소 기체가 절연 막(108)에 공급된다. 인터레벨 절연 막(106) 및 절연 막(108)의 표면이 활성화 산소 기체에 노출된다. 이어서, CVD에 의해 루테늄 막(109)이 형성된다.

7. 发明公开

KR1020030044309A 반도체 공정의 수행 방법 및 반도체 공정 장치 失效
标题翻译：半导体加工方法及半导体加工装置
公开(公告)号：KR1020030044309A
公开(公告)日：2003-06-09
申请号：KR1020010075019
申请日：2001-11-29
申请人： 삼성전자주식회사
发明人： 안재혁
IPC分类号： H01L21/02
CPC分类号： H01L21/67276 , C23C16/0236 , C23C16/54 , H01L21/31116 , Y10S414/139
摘要： PURPOSE: A method for processing of semiconductor and apparatus for processing of semiconductor are provided to minimize a loss of a processing time by performing continuously a previous process and the succeeding process. CONSTITUTION: The first group wafer is loaded into the first boat(S10). The first boat is transferred to a dry etch module(S12). A natural oxide layer of the first group wafer is removed by performing an etch process(S14). The first group wafer is transferred to the first vertical furnace(S16). A deposition process is performed on the first group wafer and the second group wafer is loaded into the second boat(S18). The second boat is transferred to the dry etch module(S20). A natural oxide layer of the second group wafer is removed by performing the etch process(S22). The second group wafer is transferred to the second vertical furnace(S24). The deposition process is performed on the second group wafer(S26). The boat is taken out of the vertical furnace(S28).
摘要翻译：目的：提供一种用于处理半导体的方法和用于处理半导体的装置，以通过连续执行先前的处理和后续处理来最小化处理时间的损失。规定：第一组晶片装入第一艘船（S10）。将第一艘船转移到干蚀刻模块（S12）。通过进行蚀刻处理去除第一组晶片的天然氧化物层（S14）。将第一组晶片转移到第一立式炉（S16）。在第一组晶片上执行沉积处理，并且将第二组晶片装载到第二舟皿中（S18）。第二个船被转移到干蚀刻模块（S20）。通过进行蚀刻处理去除第二组晶片的自然氧化物层（S22）。将第二组晶片转移到第二立式炉（S24）。在第二组晶片上执行沉积处理（S26）。船从立式炉中取出（S28）。

8. 发明公开

KR1020010032904A 전자기 방사를 이용하는 반도체들의 표면 변경 有权
标题翻译：使用电磁辐射的半导体表面改性
公开(公告)号：KR1020010032904A
公开(公告)日：2001-04-25
申请号：KR1020007006238
申请日：1998-11-19
申请人： 캐논 유.에스.에이. 인코포레이티드
发明人： 칸아쉬래프알. , 라마나탄사상안 , 포기아토지오바니안토니오
IPC分类号： H01L21/00
CPC分类号： H01L21/02164 , C23C16/0236 , H01L21/02271 , H01L21/0231 , H01L21/31612 , H01L21/31625 , H01L21/31662 , H01L21/76232
摘要： 열산화층상의도핑되지않은실리케이트글라스유전층들의증착비율은자외선(UV) 그리고/또는진공자외선(VUV) 파장들들의전자기방사를이용한상기열산화층의선처리에의해증가된다. 상기결과막들의표면매끄러움역시 UV 그리고/또는 VUV 방사를이용한막들의선처리에의해증가된다. 게다가, 도핑되지않은실리케이트글라스막들의갭 채움능력은 UV 그리고/또는 VUV 방사를이용한상기열산화층의선처리에의해증가된다. 새로운장비(100)와방법들이반도체디바이스들(112)을 UV 그리고/또는 VUV 방사에노출하기위해서, 그리고반도체생산을위한증착비율과막의품질향상을위해서제공된다. 상기새로운방법들과결합하는반도체디바이스들역시묘사된다.

9. 发明公开

KR1020000023788A 기상 합성에 의한 다이아몬드 필름 제조방법 失效
标题翻译：通过气相合成获得金刚石层的工艺
公开(公告)号：KR1020000023788A
公开(公告)日：2000-04-25
申请号：KR1019997000268
申请日：1997-07-15
申请人： 오오오 비소키 테크놀로기
发明人： 사모로도프,블라디미르아나톨레비치 , 라키모프,알렉산드르투르수노비치 , 수에틴,니콜라이블라디스라포비치
IPC分类号： C01B31/06
CPC分类号： H01J9/025 , C23C16/0236 , C23C16/0272 , C23C16/271 , C23C16/56 , C30B25/105 , C30B29/04 , C01B32/25
摘要： PURPOSE: A method for fabricating a diamond layer uses a gas phase synthesis to provide a high efficiency layer usable as a field emission emitter. CONSTITUTION: The method comprises the steps of: heating a metal filament and a substrate in the stream of hydrogen; injecting a carbon-containing gas into the hydrogen stream; growing a diamond layer on the substrate in the mixture of hydrogen and carbon-containing gas; and removing a graphite phase under the hydrogen atmosphere. The metal filament is heated at a temperature of about 650°C to 900°C, while maintaining the concentration of the carbon-containing gas in the gas stream in the range from 2% to 10%. A protective grid screen is arranged between the substrate and the metal filament. The carbon-containing gas is methane in the concentration of 2 to 8% added to the gas stream.
摘要翻译：目的：制造金刚石层的方法使用气相合成来提供可用作场致发射体的高效率层。构成：该方法包括以下步骤：在氢气流中加热金属丝和基底; 将含碳气体注入氢气流中; 在氢和含碳气体的混合物中在衬底上生长金刚石层; 并在氢气氛下除去石墨相。金属丝在约650℃至900℃的温度下加热，同时将气流中的含碳气体的浓度保持在2％至10％的范围内。在基板和金属丝之间布置有保护栅格屏。含碳气体是加入到气流中的浓度为2至8％的甲烷。

10. 发明公开

KR1020140068773A 스트립 형태의 기판들을 가공하기 위한 장치 및 방법 审中-实审
标题翻译：用于处理条纹基底的装置和方法
公开(公告)号：KR1020140068773A
公开(公告)日：2014-06-09
申请号：KR1020130145325
申请日：2013-11-27
申请人： 아익스트론 에스이
发明人： 테오,케니쓰비.케이. , 루페싱헤,날린엘.
IPC分类号： C23C16/54 , C23C14/56 , H01L31/04
CPC分类号： C23C16/26 , C23C16/0236 , C23C16/4412 , C23C16/4558 , C23C16/458 , C23C16/545
摘要： The present invention relates to an apparatus for processing a strip shaped substrate (1), particularly for coating the strip shaped substrate, in a process chamber (2) by using a process roll (3) supported to be able to rotate around a rotating shaft (18) in the process chamber (2), whereby the substrate (1) unwound from a first spool (6) is spirally supported at an outer surface of the process roll (3) to be processed continuously, particularly to be coated and the processed or coated substrate is wound around a second spool (7). To coat the strip shaped substrate with a graphene layer or a nanotube layer in a continuous pass process, a gas introducing/discharging device (8, 9, 10) is suggested to form a gas flow oriented parallel to the rotating shaft (18) in principle. Further, the present invention relates to a method for coating the strip shaped substrate (1) in the apparatus for processing the strip shaped substrate.
摘要翻译：本发明涉及一种用于处理带状基板（1）的装置，特别是用于将处理室（2）中的带状基板涂覆在处理室（2）中，该处理辊（3）被支撑成能够围绕旋转轴（1）从第一卷筒（6）展开的基板（1）被螺旋地支撑在处理辊（3）的外表面上，以被连续加工，特别是被涂覆，并且加工或涂覆的基材缠绕在第二卷轴（7）周围。为了在连续通过过程中用石墨烯层或纳米管层涂覆带状基板，建议气体引入/排出装置（8,9,10）形成平行于旋转轴（18）定向的气流原理。此外，本发明涉及在用于处理带状基板的装置中涂覆带状基板（1）的方法。

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