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    • 6. 发明公开
    • 원자 힘 현미경 리소그래피를 이용한 금속 나노 패턴의 제조 방법
    • 使用原子力显微镜光刻制备金属纳米材料的方法
    • KR1020100081474A
    • 2010-07-15
    • KR1020090000728
    • 2009-01-06
    • 한양대학교 산학협력단
    • 이해원이조원권광민유재범
    • H01L21/027B82Y40/00
    • G03F7/70375G03F7/165G03F7/2051
    • PURPOSE: A method for preparing metal nano-patterns using an atomic is provided to effectively form a metal nano pattern on a substrate corresponding to a probe of an atomic microscope by forming a resistor film after forming organic intermediate layer. CONSTITUTION: The surface of a substrate is reformed to a negative ion(S10). An organic compound intermediate layer is formed in the reformed substrate surface(S20). The resist including the organic-metallic compound is spread on the organic compound intermediate layer to form a resist film(S30). A voltage is applied between the probe of an atomic force microscope and the substrate to form a nano-pattern on the surface of the substrate(S40). The resist film is removed from the substrate in which the metal nano pattern is formed(S50).
    • 目的:提供使用原子制备金属纳米图案的方法,通过在形成有机中间层之后形成电阻膜,在对应于原子显微镜的探针的基板上有效形成金属纳米图案。 构成:将基板的表面重新形成负离子(S10)。 在重整基板表面中形成有机化合物中间层(S20)。 将包含有机金属化合物的抗蚀剂铺展在有机化合物中间层上以形成抗蚀剂膜(S30)。 在原子力显微镜的探针和衬底之间施加电压以在衬底的表面上形成纳米图案(S40)。 从其中形成金属纳米图案的基板去除抗蚀剂膜(S50)。
    • 7. 发明授权
    • 탐침 현미경을 이용한 리소그래피 장치 및 그 방법
    • 使用扫描探针显微镜进行光刻的方法和装置
    • KR100882555B1
    • 2009-02-12
    • KR1020070104876
    • 2007-10-18
    • 한양대학교 산학협력단
    • 이해원정정주한철수권광민
    • G01Q80/00G03F7/20H01J37/26
    • G01Q80/00G03F7/2035H01J37/2955H01L21/0334
    • A lithography apparatus and a method using a probe microscope are provided to draw the mathematical model by building the lithography result according to the specific condition to database. A voltage applying unit(110) is controlled by center control units(100). The voltage applying unit performs the lithography by authorizing the voltage to the sample. Current detection units(120) measure the micro current generated by the voltage of the voltage applying unit. The current detection units deliver the measured value to the center control units. An environmental control unit(130) controls the temperature and humidity of the lithography computational environment. A surface measuring unit(140) measures the change amount of the surface height of sample.
    • 提供光刻设备和使用探针显微镜的方法,通过根据具体的数据库建立光刻结果绘制数学模型。 电压施加单元(110)由中央控制单元(100)控制。 电压施加单元通过授权对样品的电压进行光刻。 电流检测单元(120)测量由电压施加单元的电压产生的微电流。 当前检测单元将测量值传送给中央控制单元。 环境控制单元(130)控制光刻计算环境的温度和湿度。 表面测量单元(140)测量样品的表面高度的变化量。
    • 9. 发明公开
    • 탐침 현미경의 리소그래피 장치 및 방법
    • 纳米扫描仪和扫描探针显微镜的方法
    • KR1020080104732A
    • 2008-12-03
    • KR1020070051927
    • 2007-05-29
    • 한양대학교 산학협력단
    • 이해원정정주한철수권광민이태규
    • H01L21/027G03F7/00
    • H01L21/0274G03F7/2022G03F7/70491G03F7/70775
    • The lithography apparatus and method of the probe microscope are provided to generate the signal for the nanostructures manufacture in the location which a user wants by outputting the respective digital lithography signal or the analog lithography signal. The lithography apparatus of the probe microscope comprises the information input unit(11), and the output control. The information input unit receives the information for manufacturing the nanostructures to the sample. The information input unit receives the digital or the analog location information of sample. The output control outputs digital produces the respective digital lithography control signal or the analog lithography signal according to the set-up lithography algorithm and the output control outputs digital or the analog location information of the sample selected according to the location information input method of the sample.
    • 提供探针显微镜的光刻设备和方法,以通过输出相应的数字光刻信号或模拟光刻信号,在用户想要的位置产生用于纳米结构制造的信号。 探针显微镜的光刻设备包括信息输入单元(11)和输出控制。 信息输入单元接收用于制造纳米结构到样品的信息。 信息输入单元接收样本的数字或模拟位置信息。 输出控制输出数字根据设置光刻算法产生相应的数字光刻控制信号或模拟光刻信号,并且输出控制输出根据样本的位置信息输入方法选择的样本的数字或模拟位置信息 。
    • 10. 发明授权
    • 원자 힘 현미경 리소그래피 기술을 이용한 박막 패턴 제작방법
    • 使用原子力显微镜光刻的薄膜图案的制造方法
    • KR100869546B1
    • 2008-11-19
    • KR1020070096658
    • 2007-09-21
    • 한양대학교 산학협력단
    • 이해원고경근권광민
    • H01L21/027H01L21/304B82Y40/00
    • G03F7/2049B82Y10/00B82Y40/00H01L21/3213
    • The step for resist-related processing can be removed and the suitable resolution can be secured by forming a thin film pattern using the atomic force microscope lithography technique. The thin film pattern manufacturing method using the atomic force microscope lithography technique is provided. A step is for forming the first thin film on the substrate(10). A step is for forming the second thin film for the etching mask on the first thin film. A step is for forming the oxide pattern in a part of the second thin film by using the atomic force microscope(13). A step is for forming the etching mask for exposing a part of the first thin film by dry-etching the oxide pattern. A step is for dry etching the exposed part of the first thin film by using the etching mask.
    • 可以除去抗蚀剂相关处理的步骤,并且可以通过使用原子力显微镜光刻技术形成薄膜图案来确保合适的分辨率。 提供了使用原子力显微镜光刻技术的薄膜图案制造方法。 步骤是在衬底(10)上形成第一薄膜。 步骤是在第一薄膜上形成用于蚀刻掩模的第二薄膜。 步骤是通过使用原子力显微镜(13)在第二薄膜的一部分中形成氧化物图案。 步骤是通过干蚀刻氧化物图案形成用于暴露第一薄膜的一部分的蚀刻掩模。 通过使用蚀刻掩模来干法蚀刻第一薄膜的暴露部分的步骤。