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    • 1. 发明公开
    • 반도체성 탄소나노튜브 3차원 네트워크의 제조 방법
    • 半导体碳纳米管的制造方法
    • KR1020120130668A
    • 2012-12-03
    • KR1020110072994
    • 2011-07-22
    • 한양대학교 산학협력단
    • 이해원서정은여해구
    • B82B3/00B82B1/00C01B31/02H01B1/04
    • C01B32/172B01J19/12B82B1/00B82B3/0095C01B32/17C01B2202/02
    • PURPOSE: A manufacturing method of semi-conductive carbon nano-tube 3d networks is provided to selectively remove metallic carbon nano-tube among the carbon nano-tube 3D networks. CONSTITUTION: A manufacturing method of semi-conductive carbon nano-tube 3d networks comprises the following steps: forming silicon pillar on a silicon substrate; dipping the silicon substrate into a metal catalyst solution and absorbing the metal catalyst on the substrate; providing carbon source gas on the substrate in which the catalyst is absorbed and forming carbon nano-tube 3D network between the silicon pillars; and selectively removing the metal carbon nano-tube by gas plasma processing the carbon nano-tube 3D network. The plasma processing is performed at 5-25W and room temperature for 60-90 seconds. The gas used in the plasma processing is hydrogen.
    • 目的:提供半导体碳纳米管3d网络的制造方法,以选择性地去除碳纳米管3D网络中的金属碳纳米管。 构成:半导体碳纳米管3d网络的制造方法包括以下步骤:在硅衬底上形成硅柱; 将硅衬底浸入金属催化剂溶液中并吸收衬底上的金属催化剂; 在催化剂被吸收的基板上提供碳源气体,并在硅柱之间形成碳纳米管3D网络; 并通过碳纳米管3D网络的气体等离子体处理选择性去除金属碳纳米管。 等离子体处理在5-25W和室温下进行60-90秒。 用于等离子体处理的气体是氢气。
    • 2. 发明公开
    • 고강도 탄소나노튜브 3차원 네트워크의 제조 방법
    • 具有改进强度的碳纳米管三维网络的制造方法
    • KR1020120059349A
    • 2012-06-08
    • KR1020110088430
    • 2011-09-01
    • 한양대학교 산학협력단
    • 이해원서정은
    • C01B31/02C23C16/26B82B3/00B82Y40/00
    • C01B32/16B82B3/0038B82Y40/00C23C16/26
    • PURPOSE: A method for manufacturing high intensity three-dimensional network of carbon nanotubes is provided to keep the three-dimensional network of the carbon nanotubes in fluid by coating metal oxide on the three-dimensional network of the carbon nanotubes. CONSTITUTION: A method for manufacturing high intensity three-dimensional network of carbon nanotubes includes the following: silicon pillars are formed on a silicon substrate; the silicon substrate with the silicon pillar is immersed in a metal bicatalyst solution to uniformly absorb the metal bicatalyst on the substrate; carbon source gas is supplied to the substrate with the absorbed catalyst to form three-dimensional network of carbon nanotubes between the silicon pillars; a metal oxide is coated on the three-dimensional network of the carbon nanotubes based on an atomic layer deposition method; the three-dimensional network with coated metal oxide of the carbon nanotubes is re-immersed in the metal bicatalyst solution; and carbon nano-tubes are coated.
    • 目的:提供一种制造碳纳米管高强度三维网络的方法,通过在碳纳米管的三维网络上涂覆金属氧化物,将碳纳米管的三维网络保持在流体中。 构成:用于制造碳纳米管的高强度三维网络的方法包括:在硅衬底上形成硅柱; 将具有硅柱的硅衬底浸入金属双催化剂溶液中以均匀地吸收衬底上的金属双催化剂; 用吸收的催化剂将碳源气体供应到衬底,以在硅柱之间形成碳纳米管的三维网络; 基于原子层沉积方法将金属氧化物涂覆在碳纳米管的三维网络上; 将具有碳纳米管涂覆金属氧化物的三维网络重新浸入金属双催化剂溶液中; 并涂覆碳纳米管。