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1. 发明授权

KR101650722B1 질화물 반도체 발광소자 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：KR101650722B1
公开(公告)日：2016-08-24
申请号：KR1020100012823
申请日：2010-02-11
申请人： 삼성전자주식회사
发明人： 황석민 , 한재호 , 김재윤 , 하해수 , 이수열 , 김제원
IPC分类号： H01L33/20
摘要： 본발명은텍스쳐(texture) 효과를통해광추출효율(Light Extraction Efficiency)이향상된질화물반도체발광소자에관한것으로, 기판위에형성되며, 제1 도전형질화물반도체층및 제2 도전형질화물반도체층과, 그사이에위치하는활성층을포함하는발광구조물; 상기제1 도전형질화물반도체층에전기적으로연결된제1 전극; 상기제2 도전형질화물반도체층에전기적으로연결된제2 전극; 및상기제1 전극및 상기제2 전극사이에위치하며, 상기발광구조물의상하면을관통하도록형성된복수개의관통홀을구비하는광추출패턴;을포함한다.
摘要翻译：的通过影响萃取效率（光提取效率）的增强的氮化物涉及一种半导体发光器件，形成一基板，一第一导电型氮化物半导体层和所述第二导电型氮化物半导体层上的本发明的纹理（质地）; 包括位于其间的有源层的发光结构; 电连接到第一导电材料半导体层的第一电极; 电连接到第二导电材料半导体层的第二电极; 并且光提取图案设置在第一电极和第二电极之间，光提取图案具有形成为穿透发光结构的下表面的多个通孔。

2. 发明授权

KR101601625B1 발광다이오드 어레이 및 그 제조방법 有权
标题翻译：发光二极管阵列及其制造方法
公开(公告)号：KR101601625B1
公开(公告)日：2016-03-09
申请号：KR1020090114556
申请日：2009-11-25
申请人： 삼성전자주식회사
发明人： 한재호 , 김성태 , 김제원 , 이수열 , 하해수
IPC分类号： H01L33/00 , H01L33/62
摘要： 본발명은발광다이오드어레이및 그제조방법에관한것으로서, 본발명의일 측면은, 상면에형성된요철구조를구비하며, 전기절연성을갖는기판과, 상기요철구조의볼록부에의하여둘러싸인복수의소자영역에각각형성되며, 각각 n형및 p형반도체층과그 사이에형성된활성층을갖는복수의발광다이오드셀 및상기발광다이오드셀의 n형반도체층또는 p형반도체층을다른발광다이오드셀의 n형반도체층또는 p형반도체층과전기적으로연결하는배선구조를포함하는발광다이오드어레이를제공한다. 본발명에따르면, 교류전원등에서사용되기에적합한발광다이오드어레이에서, 안정성과신뢰성이우수한셀 간의배선구조를갖는발광다이오드어레이및 이러한배선구조를효율적으로구현할수 있는발광다이오드어레이의제조방법을얻을수 있다.

3. 发明公开

KR1020110093037A 질화물 반도체 발광소자 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：KR1020110093037A
公开(公告)日：2011-08-18
申请号：KR1020100012823
申请日：2010-02-11
申请人： 삼성전자주식회사
发明人： 황석민 , 한재호 , 김재윤 , 하해수 , 이수열 , 김제원
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L33/32 , H01L33/36
摘要： PURPOSE: A nitride semiconductor light emitting device is provided to use a light extraction pattern which is formed by eliminating layers from a semiconductor layer until an active layer is eliminated, thereby increasing light extraction efficiency. CONSTITUTION: A light emitting structure is formed on a substrate(110). The light emitting structure includes a first conductive nitride semiconductor layer(120), an active layer(130), and a second conductive nitride semiconductor layer(140). A first electrode(150) is electrically connected to the first conductive nitride semiconductor layer. A second electrode(160) is electrically connected to the second conductive nitride semiconductor layer. A light extraction pattern(170) has a through hole.
摘要翻译：目的：提供一种氮化物半导体发光器件，以使用通过从半导体层去除层直到消除有源层而形成的光提取图案，从而提高光提取效率。构成：在基板（110）上形成发光结构。发光结构包括第一导电氮化物半导体层（120），有源层（130）和第二导电氮化物半导体层（140）。第一电极（150）电连接到第一导电氮化物半导体层。第二电极（160）电连接到第二导电氮化物半导体层。光提取图案（170）具有通孔。

4. 发明公开

KR1020110069375A 발광다이오드 어레이 및 그 제조방법 无效
标题翻译：发光二极管阵列及其制造方法
公开(公告)号：KR1020110069375A
公开(公告)日：2011-06-23
申请号：KR1020090126084
申请日：2009-12-17
申请人： 삼성전자주식회사
发明人： 한재호 , 김성태 , 김제원 , 이수열 , 하해수 , 김재윤
IPC分类号： H01L33/62
CPC分类号： H01L2224/24137 , H01L2224/48137 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L27/156 , H01L33/0008 , H01L33/62 , H01L2933/0033
摘要： PURPOSE: A light emitting diode array and a manufacturing method thereof are provided to improve stability and reliability by preventing a contact between a bridge wiring and a light emitting diode cell. CONSTITUTION: A plurality of light emitting diode cells(C1,C2) are formed on a substrate(101). A light emitting diode cell includes a first conductive semiconductor layer(102), an active layer(103), and a second conductive semiconductor layer(104). A wiring structure between light emitting diode cells is a bridge wire(105). The bridge wire is separated from the top of the substrate and the side of the light emitting diode cell. An air gap(107) is interposed between the bridge wire and the substrate.
摘要翻译：目的：提供一种发光二极管阵列及其制造方法，以通过防止桥接布线和发光二极管单元之间的接触来提高稳定性和可靠性。构成：在基板（101）上形成多个发光二极管单元（C1，C2）。发光二极管单元包括第一导电半导体层（102），有源层（103）和第二导电半导体层（104）。发光二极管单元之间的布线结构是桥接线（105）。桥接线与衬底的顶部和发光二极管单元的侧面分离。气隙（107）插入在桥接线和衬底之间。

5. 发明公开

KR1020110092830A 반도체 발광소자 无效
标题翻译：半导体发光器件
公开(公告)号：KR1020110092830A
公开(公告)日：2011-08-18
申请号：KR1020100012483
申请日：2010-02-10
申请人： 삼성전자주식회사
发明人： 김재윤 , 김제원 , 이진복 , 황석민 , 하해수 , 이수열
IPC分类号： H01L33/38
摘要： PURPOSE: A semiconductor light emitting device is provided to arrange an insulating layer for preventing short-circuit between an n-type finger and a p-type finger, thereby enhancing current distributing effects. CONSTITUTION: An active layer and a p-type semiconductor layer are formed on the first area of an n-type semiconductor layer(102). An n-type electrode(106) is formed on the second area of the n-type semiconductor layer. The n-type electrode includes an n-type pad(106a) and an n-type finger(106b). A p-type electrode is formed on the p-type semiconductor layer. The p-type electrode includes a p-type pad(107a) and a p-type finger(107b).
摘要翻译：目的：提供一种半导体发光器件，用于布置用于防止n型手指和p型手指之间短路的绝缘层，从而增强电流分布效应。构成：在n型半导体层（102）的第一区域上形成有源层和p型半导体层。 n型电极（106）形成在n型半导体层的第二区域上。 n型电极包括n型焊盘（106a）和n型手指（106b）。 p型电极形成在p型半导体层上。 p型电极包括p型焊盘（107a）和p型手指（107b）。

6. 发明公开

KR1020110092527A 반도체 발광소자 제조방법 및 이에 의하여 제조된 반도체 발광소자 无效
标题翻译：半导体发光器件及其制造的半导体发光器件的制造方法
公开(公告)号：KR1020110092527A
公开(公告)日：2011-08-18
申请号：KR1020100011996
申请日：2010-02-09
申请人： 삼성전자주식회사
发明人： 하해수 , 김제원 , 김재윤 , 황석민 , 이수열 , 한재호
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L2933/0016
摘要： PURPOSE: A method for manufacturing a semiconductor light emitting device and the semiconductor light emitting structure made by the same are provided to simplify a cleaning process by preventing the re-absorption of etching byproducts by forming an electrode forming area through a laser lift off process. CONSTITUTION: A light emitting structure is formed on a substrate(100). A light emitting structure includes a first conductive semiconductor layer(101), an active layer(102), and a second conductive semiconductor layer(103). The light emitting structure is partially separated from the substrate by radiating laser to a part of the interface of the substrate and the first conductive semiconductor layer. A first electrode(105a) is formed on the side of the first conductive semiconductor layer. A second electrode(105b) is formed on the second conductive semiconductor layer.
摘要翻译：目的：提供一种制造半导体发光器件的方法和由其制造的半导体发光结构，以通过通过激光剥离工艺形成电极形成区域来防止蚀刻副产物的再吸收来简化清洁过程。构成：在基板（100）上形成发光结构。发光结构包括第一导电半导体层（101），有源层（102）和第二导电半导体层（103）。发光结构通过将激光照射到基板和第一导电半导体层的界面的一部分而与基板部分地分离。第一电极（105a）形成在第一导电半导体层的侧面上。第二电极（105b）形成在第二导电半导体层上。

7. 发明公开

KR1020050093946A 면광원 장치 및 이를 갖는 액정표시장치 无效
公开(公告)号：KR1020050093946A
公开(公告)日：2005-09-26
申请号：KR1020040017822
申请日：2004-03-17
申请人： 삼성전자주식회사 , 코닝정밀소재 주식회사
发明人： 김중현 , 하해수 , 이상유 , 조석현
IPC分类号： G02F1/13357
CPC分类号： H01J65/046 , G02F1/133604 , H01J61/025 , H01J61/305 , H01J61/35
摘要： 광의 이용 효율을 향상시킬 수 있는 면광원 장치 및 이를 갖는 액정표시장치가 개시되어 있다. 면광원 장치는 광을 발생하는 광원 몸체, 광원 몸체의 외측 표면의 양 단부에 각각 형성되어 광원 몸체에 방전 전압을 인가하기 위한 제1 및 제2 외부전극, 및 광원 몸체의 내부에 형성되고 코팅 수지와 적어도 두 가지 이상의 입자 크기를 갖는 산란 입자로 이루어지는 반사막을 포함한다. 이때, 산란 입자는 내열성이 우수한 산화물로 이루어진다. 따라서, 반사막은 반사되는 광의 색좌표의 변화를 줄이면서 반사율을 향상시킬 수 있다.

8. 发明公开

KR1020050026251A 면광원장치, 이의 제조 방법 및 이를 이용한 액정표시장치 无效
标题翻译：表面光源及其制造方法及使用其的液晶显示装置
公开(公告)号：KR1020050026251A
公开(公告)日：2005-03-15
申请号：KR1020030063266
申请日：2003-09-09
申请人： 삼성전자주식회사 , 코닝정밀소재 주식회사
发明人： 김중현 , 이기연 , 이상유 , 조석현 , 하해수
IPC分类号： G02F1/13357
摘要： A surface light source device, a method for manufacturing the same, and a liquid crystal display using the same are provided to extend the lifespan of the device by preventing a decrease of discharge gas through the use of protective films and a light reflector layer. A surface light source device comprises a light source body, a space divider wall(300), and a power apply unit(400). The light source body has space formed therein, and includes a protective film(240) for preventing a decrease of discharge gas and a fluorescent layer(260) formed on the protective film so as to change the non-visible light generated by the discharge gas into visible light. The space divider wall divides the space of the light source body into two discharge spaces. The power apply unit applies a discharge voltage to the discharge gas so as to generate the non-visible light from the discharge gas.
摘要翻译：提供表面光源装置及其制造方法以及使用其的液晶显示器，以通过使用保护膜和光反射层防止放电气体的减少来延长器件的使用寿命。面光源装置包括光源体，空间分隔壁（300）和电力施加单元（400）。光源体具有形成在其中的空间，并且包括用于防止放电气体减少的保护膜（240）和形成在保护膜上的荧光层（260），以便改变由放电气体产生的不可见光变成可见光。空间分隔壁将光源体的空间分成两个放电空间。供电单元对放电气体施加放电电压，以从放电气体产生不可见光。

9. 发明公开

KR1020050010482A 면광원 장치, 그 제조 방법 및 이를 포함하는 액정표시장치 无效
标题翻译：用于通过应力补偿预防基板变形的表面光源装置，其制造方法，具有该基板的LCD
公开(公告)号：KR1020050010482A
公开(公告)日：2005-01-27
申请号：KR1020040044901
申请日：2004-06-17
申请人： 삼성전자주식회사 , 코닝정밀소재 주식회사
发明人： 김중현 , 이기연 , 이상유 , 김남훈 , 하해수
IPC分类号： G02F1/13357
摘要： PURPOSE: A surface light source device is provided to compensate stress generated on a lower substrate while forming barrier walls on the lower substrate by that generated on the lower substrate while forming a reflection layer thereon, thereby preventing the deformation of the lower substrate formed with the barriers and the reflection layer. CONSTITUTION: A surface light source device includes an upper substrate(3), and a lower substrate(5) corresponding to the upper substrate. A plurality of barrier walls(10) are formed between the upper and lower substrates for forming discharging spaces(11) between the upper and lower substrates. The lower substrate is formed with a reflecting layer(15), and insides of the discharging spaces are respectively formed with fluorescent layers(20). As predetermined electric fields are applied into the discharging spaces from electrodes, plasma discharge is induced into the discharge spaces, generating UV rays. By the UV rays, fluorescent substances is excited from the fluorescent layer, and visible rays are generated from the fluorescent layer. The electrodes surrounds both outer surfaces of the upper or lower substrate.
摘要翻译：目的：提供一种表面光源装置，用于补偿在下基板上产生的应力，同时在下基板上形成阻挡壁，同时在其上形成反射层，从而防止形成在下基板上的下基板的变形障碍和反射层。构成：表面光源装置包括上基板（3）和与上基板对应的下基板（5）。在上基板和下基板之间形成有多个阻挡壁（10），用于在上基板和下基板之间形成放电空间（11）。下基板形成有反射层（15），并且排出空间的内部分别形成有荧光层（20）。当预定电场从电极施加到放电空间中时，等离子体放电被引入放电空间，产生紫外线。通过紫外线，从荧光层激发荧光物质，从荧光层产生可见光。电极围绕上或下基板的两个外表面。

10. 发明公开

KR1020110095772A 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 有权
标题翻译：具有多细胞阵列，发光模块和照明装置的半导体发光器件
公开(公告)号：KR1020110095772A
公开(公告)日：2011-08-25
申请号：KR1020100015422
申请日：2010-02-19
申请人： 삼성전자주식회사
发明人： 김성태 , 김태훈 , 김재윤 , 하해수
IPC分类号： H01L33/02
CPC分类号： H01L27/156 , H01L33/20 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2933/0091 , H01L2924/00014
摘要： PURPOSE: A semiconductor light emitting device with a multi cell array, a light emitting module, and a lighting device are provided to improve luminous efficiency by forming an uneven part the lower side of the substrate and/or separation region between light emitting cells. CONSTITUTION: A plurality of light emitting cells(C) is arranged on the upper side of a substrate(11). A plurality of light emitting cells has a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A connection unit connects a plurality of light emitting cells in series, parallel, or the combination of series and parallel. An uneven part(P1) is formed on the lower side of the substrate or the upper side of a separation region between a plurality of light emitting cells. The separation region includes a region in which the first conductive semiconductor layer is exposed.
摘要翻译：目的：提供具有多单元阵列的半导体发光器件，发光模块和照明器件，以通过在衬底的下侧和/或发光单元之间的分离区域形成不平坦部分来提高发光效率。构成：在基板（11）的上侧配置有多个发光单元（C）。多个发光单元具有第一导电半导体层，有源层和第二导电半导体层。连接单元串联，并联或串联和并联的组合连接多个发光单元。在基板的下侧或多个发光单元之间的分离区域的上侧形成有凹凸部（P1）。分离区域包括暴露第一导电半导体层的区域。

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