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    • 5. 发明授权
    • 관통홀 충진방법
    • 填充通孔的方法
    • KR100803004B1
    • 2008-02-14
    • KR1020060097440
    • 2006-10-02
    • 삼성전기주식회사
    • 김태호변정수정광옥임은정김태호남효승
    • C25D7/12
    • C25D7/123H01L21/2885
    • A method for filling through holes is provided to prevent inlets of the through holes from be excessively coated, perform filling of a filling material into the through holes more compactly, and enhance adhesion of the filling material with inner walls of the through holes. As a method for filling a conductor in through holes formed in a substrate, the method for filling the through holes comprises: (a) a seed layer forming step(S100) of depositing conductive metal onto portions of inner wall surfaces of the through holes to form a seed layer; (b) a plugging step(S200) of performing an electroplating operation to fill portions of the through holes with a conductor; and (c) a growing step(S300) of performing the electroplating operation to fill residual portions of the through holes with the conductor. The step(a) is carried out by depositing conductive metal onto one face of the substrate. The step(a) comprises controlling deposition thickness of the conductive metal deposited onto the one face of the substrate to control depth of the seed layer formed on the inner wall surfaces of the through holes. The step(b) is conducted by controlling a current density applied to both faces of the substrate.
    • 提供一种用于填充通孔的方法以防止通孔的入口被过度涂覆,更紧凑地填充填充材料到通孔中,并且增强了填充材料与通孔的内壁的粘附性。 作为将导体填充到形成于基板的贯通孔的方法,填充通孔的方法包括:(a)将导电金属沉积在通孔的内壁面的部分上的种子层形成工序(S100) 形成种子层; (b)进行电镀操作以用导体填充所述通孔的部分的封堵步骤(S200); 和(c)进行电镀操作以用导体填充通孔的剩余部分的生长步骤(S300)。 步骤(a)通过将导电金属沉积在基底的一个面上来进行。 步骤(a)包括控制沉积在基板的一个面上的导电金属的沉积厚度,以控制形成在通孔的内壁表面上的种子层的深度。 步骤(b)通过控制施加到基板的两个面的电流密度来进行。
    • 6. 发明授权
    • 솔더레지스트 개구 구조 및 회로 기판
    • 焊接电阻和电路板的开放结构
    • KR101497840B1
    • 2015-03-02
    • KR1020130148573
    • 2013-12-02
    • 삼성전기주식회사
    • 이창보홍대조남효승
    • H05K3/34
    • H05K1/111H05K2201/099H05K2201/09909H05K2201/2081Y02P70/611
    • 본 발명은 솔더레지스트 개구 구조 및 회로 기판에 관한 것이다. 본 발명의 하나의 실시예에 따라, 제1 허용오차를 갖는 80㎛ 이하의 하부직경을 갖고 전극패드를 노출시키는 솔더레지스트 개구 구조에 있어서, 하부직경은 전극패드의 직경보다 작고, 하부직경보다 상부직경이 크게 형성된 단면상 역사다리꼴 형상이고, 상부직경과 하부직경의 직경차는 10㎛ 이상이고 제2 허용오차를 가지며 하부직경이 줄어들수록 증가하고, 제1 및 제2 허용오차는 2.5㎛미만인 것을 특징으로 하는 솔더레지스트 개구 구조가 제안된다. 또한, 회로 기판이 제안된다.
    • 本发明涉及阻焊剂和电路板的开口结构。 根据本发明的一个实施例,在具有第一允许误差的底部直径为80um或更小的阻焊剂的开口结构中,露出电极焊盘,底部直径在横截面上具有相反的梯形形状。 底部直径小于电极焊盘的直径。 底部直径大于顶部直径。 顶部直径和底部直径之间的差为10um以上,具有第二容许误差,并且随着底部直径的减小而增加。 第一个允许误差和第二个允许误差低于2.5um。 建议使用阻焊剂的开口结构,并提出电路板。
    • 8. 发明公开
    • 낮은 프로파일 기재의 밀착력 향상 방법
    • 用于增强低剖面基板粘合的方法
    • KR1020140047890A
    • 2014-04-23
    • KR1020120114185
    • 2012-10-15
    • 삼성전기주식회사
    • 심다미이우진남효승
    • C08J7/00H05K3/18H05K3/38H05H1/24
    • The present invention relates to a method to enhance adhesion of a surface of a low profile substrate comprising a step of hydrophilic treating a substrate surface; and a step of chemical copper plating the hydrophilic treated substrate. According to an embodiment of the present invention, in order to implement a fine circuit pattern on the low profile substrate, blister generation is suppressed through surface hydrophilic treatment using air pressure plasma and a chemical copper plating process so that formation of a fine circuit pattern is possible and the adhesion effect with the formed fine circuit pattern is improved. [Reference numerals] (AA) Surface hydrophilic treatment step; (BB) Organic matter removing step on a base surface; (CC) Surface activation step; (DD) Catalyst adsorption step; (EE) Catalyzed step; (FF) Chemical copper plating step; (GG) Dry film (DF) processing step; (HH) Pattern forming step
    • 本发明涉及一种增强低轮廓基材表面粘合性的方法,包括亲水处理基材表面的步骤; 以及对亲水处理的基材进行化学镀铜的步骤。 根据本发明的一个实施例,为了在薄型基板上实现精细电路图案,通过使用空气压力等离子体和化学镀铜处理的表面亲水处理来抑制泡罩的产生,从而形成精细电路图案是 提高了形成的精细电路图案的可能性和附着效果。 (AA)表面亲水处理工序; (BB)基面上的有机物去除步骤; (CC)表面活化步骤; (DD)催化剂吸附步骤; (EE)催化步骤; (FF)化学镀铜步骤; (GG)干膜(DF)加工步骤; (HH)图案形成步骤