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1. 发明授权

KR101789556B1 신규 아크릴계 중합체를 포함한 포토레지스트 미세패턴 형성용 조성물, 이의 제조 방법 및 이를 이용한 포토레지스트 미세패턴 형성방법 有权
标题翻译：的精细图案形成的光致抗蚀剂组合物，包括新颖的丙烯酸类聚合物，其制造方法以及形成用于使用相同的微细图案的光致抗蚀剂的方法。
公开(公告)号：KR101789556B1
公开(公告)日：2017-10-25
申请号：KR1020150078401
申请日：2015-06-03
申请人： 금호석유화학 주식회사
发明人： 신진봉 , 주현상 , 신봉하 , 이은교
IPC分类号： G03F7/11
摘要： 본발명은수용성중합체조성물을포함한포토레지스트미세패턴형성용조성물, 이의제조방법및 이를이용한포토레지스트미세패턴형성방법에대한기술로서, 보다상세하게는하기화학식 1의수용성중합체및 용매를포함한포토레지스트미세패턴형성용조성물을포토레지스트패턴상에코팅함으로써, 포토레지스트패턴의크기를감소시키는포토레지스트미세패턴형성용조성물, 이의제조방법및 이를이용한포토레지스트미세패턴형성방법을제공한다. [화학식 1]
摘要翻译：本发明涉及一种技术，用于精细图案的组合物光致抗蚀剂，它们的含水溶性聚合物组合物和使用相同的，并且更具体地，涉及含有水溶性聚合物光致抗蚀剂的微结构的精细图案形成方法的光致抗蚀剂，以及下式的溶剂中形成的制备方法通过涂布所述组合物用于形成光致抗蚀剂图案，光致抗蚀剂图像的组合物的精细图案形成从而降低了抗蚀剂图案的尺寸的图案，提供了其制备方法，以及使用相同的精细图案形成方法的光致抗蚀剂。 [式1]

2. 发明授权

KR101721158B1 포토레지스트 미세패턴 형성용 조성물, 이의 제조 방법 및 이를 이용한 포토레지스트 미세패턴 형성방법 有权
公开(公告)号：KR101721158B1
公开(公告)日：2017-03-29
申请号：KR1020150077446
申请日：2015-06-01
申请人： 금호석유화학 주식회사
发明人： 신진봉 , 주현상 , 신봉하 , 이은교
IPC分类号： G03F7/11 , G03F7/40
摘要： 본발명은수용성중합체조성물을포함한포토레지스트미세패턴형성용조성물, 이의제조방법및 이를이용한포토레지스트미세패턴형성방법에대한기술로서, 보다상세하게는하기화학식 1의수용성중합체및 용매를포함한포토레지스트미세패턴형성용조성물을포토레지스트패턴상에코팅함으로써, 포토레지스트패턴의콘택홀의크기를감소시키는포토레지스트미세패턴형성용조성물, 이의제조방법및 이를이용한포토레지스트미세패턴형성방법을제공한다. [화학식 1]

3. 发明公开

KR1020140063985A 광산발생제 및 이를 포함하는 레지스트 조성물 有权
标题翻译：光电发生器和包含其的耐热组合物
公开(公告)号：KR1020140063985A
公开(公告)日：2014-05-28
申请号：KR1020120130783
申请日：2012-11-19
申请人： 금호석유화학 주식회사
发明人： 주현상 , 김삼민 , 안호익 , 신진봉 , 성기주
IPC分类号： G03F7/028 , G03F7/004
CPC分类号： G03F7/028 , G03F7/0042 , G03F7/0045 , G03F7/066 , G03F7/20
摘要： The present invention provides a photoacid generator which is represented by chemical formula 1 and can reduce line edge roughness by suppressing the spread of acid and a resist composition including the same. In chemical formula 1, each substituent is as defined in the specification.
摘要翻译：本发明提供一种由化学式1表示的光致酸产生剂，并且可以通过抑制酸的扩散和包含其的抗蚀剂组合物来降低线边缘粗糙度。在化学式1中，每个取代基如说明书中所定义。

4. 发明授权

KR101378026B1 레지스트용 중합체 및 이를 포함하는 레지스트 조성물 有权
标题翻译：聚合物用于耐受和耐受组合，包括它们
公开(公告)号：KR101378026B1
公开(公告)日：2014-03-25
申请号：KR1020130046518
申请日：2013-04-26
申请人： 금호석유화학 주식회사
发明人： 주현상 , 김진호 , 한준희 , 유인영
IPC分类号： G03F7/004 , G03F7/26 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/038 , G03F7/20 , G03F7/2039 , G03F7/26 , H01L21/027
摘要： The present invention provides a polymer for resist of Chemical Formula 1 as below and a resist composition comprising the same, wherein the polymer is useful for forming resist patterns having improved margin and resolution and low line width roughness (LWR) by enhancing solubility with respect to an organic developer when forming patterns using lithography, in particular, patterns by a NTD method, as well as has excellent contrast enhancing effects. (In the Chemical Formula 1, R_1-R_4, and a and b are respectively the same as defined in the specification.)
摘要翻译：本发明提供如下的化学式1的抗蚀剂用聚合物和含有该聚合物的抗蚀剂组合物，其中该聚合物可用于形成具有改善的界限和分辨率以及较低线宽粗糙度（LWR）的抗蚀剂图案，其通过增强相对于使用光刻形成图案的有机显影剂，特别是通过NTD方法的图案，以及具有优异的对比度增强效果。（在化学式1中，R_1-R_4和a和b分别与说明书中定义相同）

5. 发明授权

KR101229312B1 술포늄 화합물, 광산발생제 및 이의 제조방법 有权
标题翻译：磺化合物，光致发电机和制造它们的木马
公开(公告)号：KR101229312B1
公开(公告)日：2013-02-04
申请号：KR1020110000264
申请日：2011-01-03
申请人： 금호석유화학 주식회사
发明人： 주현상 , 서동철 , 윤대경 , 신대현
IPC分类号： C07C381/12 , G03F7/004
CPC分类号： C07D307/64 , C07C309/06 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397
摘要： 본 발명은 술포늄 화합물, 광산발생제 및 이의 제조방법에 관한 것으로, 하기 화학식1로 표시되는 술포늄 화합물을 제공한다.
[화학식1]

상기 화학식1에서, 상기 X, R
1 , R
2 , R
3 , R
4 , R
5 , R
6 , A 및 B에 관한 정의는 명세서에 기재된 바와 같다. 상기 술포늄 화합물은 광산발생제로 사용하는 균일하고 우수한 레지스트 패턴을 얻을 수 있다.

6. 发明公开

KR1020120072509A 공중합체, 이의 제조방법 및 이를 포함하는 레지스트 조성물 有权
标题翻译：聚合物及其制造方法及其相容组合物
公开(公告)号：KR1020120072509A
公开(公告)日：2012-07-04
申请号：KR1020100134284
申请日：2010-12-24
申请人： 금호석유화학 주식회사
发明人： 오정훈 , 한준희 , 김태곤 , 주현상
IPC分类号： C08G63/66 , C08G63/82 , C08G61/12 , G03F7/027
CPC分类号： C08G63/668 , G03F7/0392 , G03F7/0395 , G03F7/2039
摘要： PURPOSE: A copolymer is provided to have high thermal resistance, excellent coatability, to be hardly sublimated, and to improve alkali development, and etching resistance. CONSTITUTION: A copolymer comprises a repeating unit in chemical formula 1. In chemical formula 1, R1 is one selected from alkanediyl, heteroalkanediyl, cycloalkanediyl, heterocycloalkanediyl, arylene, heteroarylene, and alkylarylene. R2 is one selected from hydrogen, alkyl group,, heteroalkyl group, cycloalkyl group, heterocycloalkyl group, aryl group, heteroaryl group, alkoxy group, and alkyl alkoxy group, R3, R4, R5, and R6 is respectively one selected from hydrogen, and C1-5 alkyl group, n is an integer from 0-10, and n2 is an integer from 0-10.
摘要翻译：目的：提供具有高耐热性，优异的涂布性，几乎不升华，以及改善碱显影和耐蚀刻性的共聚物。构成：共聚物包含化学式1中的重复单元。在化学式1中，R 1选自烷二基，杂烷二基，环烷二基，杂环烷二基，亚芳基，亚杂芳基和烷基亚芳基。 R2是选自氢，烷基，杂烷基，环烷基，杂环烷基，芳基，杂芳基，烷氧基和烷基烷氧基的一个，R3，R4，R5和R6分别选自氢和 C 1-5烷基，n为0〜10的整数，n 2为0〜10的整数。

7. 发明公开

KR1020100034260A 오늄염 화합물, 이를 포함하는 고분자 화합물, 상기 고분자화합물을 포함하는 화학증폭형 레지스트 조성물 및 상기 조성물을 이용한 패턴 형성 방법 有权
标题翻译：盐酸盐化合物，包括其中的聚合物，化学放大电阻组合物和使用化学放大电阻组合物的方法
公开(公告)号：KR1020100034260A
公开(公告)日：2010-04-01
申请号：KR1020080093299
申请日：2008-09-23
申请人： 금호석유화학 주식회사
发明人： 주현상 , 박주현 , 오정훈 , 신대현
IPC分类号： C07C309/64 , C07C309/65
CPC分类号： C07C381/12 , C07C309/12 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： PURPOSE: A chemically amplified resist composition is provided to ensure little dependability for a substrate, excellent adhesive property, good dry etching resistance, and excellent sensitivity, resolution, and development property. CONSTITUTION: A compound has a structure represented by chemical formula 1. In chemical formula 1, R1 is hydrogen, trifluoromethyl, and C1-5 alkyl or C1-5 alkoxy; and A is represented by chemical formula 2 or 3. In chemical formula 2 or 3, R2, R3, R4, R5 and R6 are independently C1-20 substituted or unsubstituted alkyl group, C 3-10 substituted or unsubstituted aryl group, C1-10 substituted or unsubstituted perfluoroalkyl group, substituted or unsubstituted benzyl group, or C6-30 substituted or unsubstituted aryl group.
摘要翻译：目的：提供化学放大抗蚀剂组合物，以确保对基材几乎不可靠性，优异的粘合性，良好的耐干蚀刻性，以及优异的灵敏度，分辨率和显影性。构成：化合物具有由化学式1表示的结构。在化学式1中，R 1是氢，三氟甲基和C 1-5烷基或C 1-5烷氧基; 并且A由化学式2或3表示。在化学式2或3中，R 2，R 3，R 4，R 5和R 6独立地为C 1-20取代或未取代的烷基，C 3-10取代或未取代的芳基，取代或未取代的全氟烷基，取代或未取代的苄基或C6-30取代或未取代的芳基。

8. 发明公开

KR1020090108935A 화학증폭형 포토레지스트용 공중합체 및 이를 포함하는포토레지스트 조성물 有权
标题翻译：化学放大型光电聚合物及其光电组合物的共聚物
公开(公告)号：KR1020090108935A
公开(公告)日：2009-10-19
申请号：KR1020080034293
申请日：2008-04-14
申请人： 금호석유화학 주식회사
发明人： 주현상 , 박주현 , 조승덕 , 정성도
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0047 , G03F7/20
摘要： PURPOSE: A chemical amplification photoresist copolymer is provided to apply thermal reflow process to achieve fine resolution. CONSTITUTION: A chemical amplification photoresist copolymer is denoted by the chemical formula 1. In the chemical formula 1, R1 is acyl or trihalo acyl group. R2, R3 and R4 are independently alkyl group of 1-30 carbon atoms containing hydrogen atom, ether group, ester group, carbonyl group, epoxy group, nitrile group, or aldehyde group or not containing.
摘要翻译：目的：提供化学扩增光致抗蚀剂共聚物以应用热回流工艺以实现精细分辨率。构成：化学式1表示化学扩增光致抗蚀剂共聚物。在化学式1中，R 1为酰基或三卤代酰基。 R2，R3和R4独立地为含有氢原子，醚基，酯基，羰基，环氧基，腈基或醛基的含有1-30个碳原子的烷基或不包含。

9. 发明公开

KR1020010004856A 산화제를 이용한 나프토퀴논류 및 안트라퀴논류의 제조방법 失效
标题翻译：使用氧化剂制备萘醌和蒽醌
公开(公告)号：KR1020010004856A
公开(公告)日：2001-01-15
申请号：KR1019990025607
申请日：1999-06-30
申请人： 금호석유화학 주식회사
发明人： 주영제 , 김진억 , 원정임 , 주현상
IPC分类号： C07C50/10
摘要： PURPOSE: A naphthoquinone and anthraquinone compounds is provided for accomplishing a simple process, higher yield of product and reduced cost of production by using £2+4| Diels-Alder reaction method. CONSTITUTION: A production of naphthoquinone and anthraquinone compounds is characterized in that it uses £2+4| Diels-Alder reaction process. Particularly, benzoquinone or naphthoquinone and any suitable solvent is placed into the £2+4| Diels-Alder reactor. Then, after adding 1.3-butadiene to the reactor the mixture is reacted at 60-120 deg.C and the obtained product is subjected to the dehydrogenation under a specific catalyst to form the final naphthoquinone or anthraquinone products. The dehydrogenation process is carried under oxidizing agents such as copper(I) chloride, hydrogen peroxide, sodium chlorate, sodium hydroxide, and oxygen.
摘要翻译：目的：提供萘醌和蒽醌化合物，用于实现简单的工艺，更高的产率和降低的生产成本使用£2 + 4 | 狄尔斯 - 阿尔德反应法。构成：生产萘醌和蒽醌化合物的特征在于它使用£2 + 4 | 狄尔斯 - 阿尔德反应过程。特别地，将苯醌或萘醌和任何合适的溶剂置于£2 + 4 |中狄尔斯 - 阿尔德反应堆。然后，向反应器中加入1,3-丁二烯后，将混合物在60-120℃下反应，并将所得产物在特定催化剂下脱氢形成最终的萘醌或蒽醌产物。脱氢方法在氧化剂如氯化铜（I），过氧化氢，氯酸钠，氢氧化钠和氧气下进行。

10. 发明公开

KR1020000038442A 페놀 제조방법 失效
标题翻译：生产苯酚的方法
公开(公告)号：KR1020000038442A
公开(公告)日：2000-07-05
申请号：KR1019980053455
申请日：1998-12-07
申请人： 금호석유화학 주식회사
发明人： 김진억 , 주영제 , 주현상
IPC分类号： C07C37/58
摘要： PURPOSE: Method for preparing phenol from benzene by direct oxidation that uses iron (III) chloride hexahydrate as a catalyst and hydrogen peroxide as a hydroxy radical donor is provided. CONSTITUTION: A phenol is produced by reacting the benzene, 30-50 % of a hydrogen peroxide, 1-100 mol% (based on the benzene) of Fe(III) compound as a main catalyst such as iron(+3)chloride hexahydrate, iron(+3)acetylacetonate, iron(+3)oxalate dihydrate and etc., 1-100 wt% (based on the catalyst) of a promoter such as CuCl2, Cu(+2)acetate, Co(+2)sulfate and etc. in a mixed solvent comprising sulfuric acid of 0.05-0.2 N and polar organic solvent such as acetonitrile, alcohol, acetone in a volume ratio of 1:0.5-0.5:1 under nitrogen or oxygen at 20-50°C.
摘要翻译：目的：提供使用氯化铁（III）六水合物作为催化剂和过氧化氢作为羟基自由基供体的通过直接氧化从苯制备苯酚的方法。构成：通过使苯，30-50％的过氧化氢，1-100mol％（基于苯）的Fe（III）化合物作为主要催化剂，例如氯化铁（+3）六水合物，乙酰丙酮铁（+3），草酸铁（+3）二水合物等，1-100重量％（基于催化剂）促进剂如CuCl 2，Cu（+2）乙酸酯，Co（+2）硫酸盐在含有0.05-0.2N的硫酸和极性有机溶剂如乙腈，醇，丙酮的体积比为1:0.5-0.5:1的混合溶剂中，在20-50℃的氮气或氧气下进行。

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