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    • 34. 发明公开
    • 비정질 실리콘층의 결정화 방법
    • 使用其的非晶硅和切换装置的结晶过程
    • KR1020050029877A
    • 2005-03-29
    • KR1020030066130
    • 2003-09-24
    • 엘지디스플레이 주식회사
    • 김영주
    • G02F1/136
    • H01L21/02675H01L21/2026H01L21/268H01L23/544H01L27/1285H01L27/1296H01L29/66757H01L29/78675H01L2223/5442H01L2223/54473H01L2924/0002H01L2924/00
    • A process of crystallizing an amorphous silicon layer and a switching device using the process are provided to reduce a non-uniform crystalline region and shorten processing time by performing a crystallization process using a mask capable of selectively crystallize only a required portion. An insulating substrate having the first region and the second region surrounding the first region is prepared. An amorphous silicon layer(314) is formed on the overall surface of the insulating substrate. A laser beam having an energy density capable of removing the amorphous silicon layer is irradiated to the portion of the amorphous silicon layer, which is formed on the second region, to form an alignment key(316). The portion of the amorphous silicon layer, which is formed on the first region, is selectively crystallized based on the alignment key.
    • 提供使非晶硅层结晶的方法和使用该方法的开关器件,以通过使用能够仅选择性地结晶所需部分的掩模进行结晶处理来减少不均匀的结晶区域并缩短处理时间。 准备具有围绕第一区域的第一区域和第二区域的绝缘基板。 在绝缘基板的整个表面上形成非晶硅层(314)。 具有能够去除非晶硅层的能量密度的激光束被照射到形成在第二区域上的非晶硅层的形成对准键(316)的部分。 基于对准键,形成在第一区域上的非晶硅层的部分被选择性地结晶化。