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    • 12. 发明公开
    • 아날로그-디지털 변환기, 이를 포함하는 온도정보 출력장치및 그 수행방법
    • 用于模拟数字转换的方法和装置,包括其上的热传感器及其方法
    • KR1020080114196A
    • 2008-12-31
    • KR1020070063540
    • 2007-06-27
    • 에스케이하이닉스 주식회사
    • 정종호이재진곽계달임종만최재웅채명준
    • H03M1/12
    • H03M1/64H03M1/124H03M2201/192H03M2201/831H03M2201/93
    • An analog-digital converter capable of improving accuracy of conversion operation, on die thermal sensor including the same, and implementing method thereof are provided to facilitate application in a DRAM(Dynamic Random Access Memory) etc by not requiring a charge pump. An analog-digital converter capable of improving accuracy of conversion operation comprises an integrating part(420) and a counting part(430). The integrating part integrates a conversion object voltage having a positive value in a reverse terminal and a first voltage higher than the conversion object voltage in a non-reverse terminal with a positive slope during a predetermined time. The integrating part outputs and integrates a second voltage higher than the first voltage instead of the conversion object voltage in the reverse terminal with a negative slope after the predetermined time. The counting part outputs a digital code by counting a time that an output voltage of the integrating part falls down to a specified level.
    • 提供了一种能够提高转换操作精度的模拟数字转换器,包括其的芯片热敏传感器及其实现方法,以便于不需要电荷泵便于在DRAM(动态随机存取存储器)等中应用。 能够提高转换操作精度的模拟数字转换器包括积分部件(420)和计数部件(430)。 积分部在预定时间内积分反向端子中具有正值的转换对象电压和高于非反向端子中的转换对象电压的第一电压,具有正斜率。 在预定时间之后,积分部分输出并积分高于第一电压的第二电压,而不是反向端子中的转换对象电压为负斜率。 计数部通过对积分部的输出电压下降到指定电平的时间进行计数来输出数字码。
    • 14. 发明公开
    • 전압 발생 회로
    • 电压发生电路
    • KR1020140028621A
    • 2014-03-10
    • KR1020120095229
    • 2012-08-29
    • 에스케이하이닉스 주식회사
    • 임종만
    • G05F1/565G05F1/10
    • G05F5/00G11C5/147
    • The present invention relates to a voltage generation circuit capable of reducing area and power consumption. The voltage generation circuit includes voltage generation units which compare each inner voltage with each reference voltage, generates each detection signal, and controls the level of the each inner voltage responding to an oscillating signal; a control part which generates an oscillating control signal responding to each detection signal; an oscillator which generates the oscillating signal responding to the oscillating signal; and a selection output part which selectively supplies the oscillating signal responding to each detection signal to one or more among the voltage generation units. [Reference numerals] (210) VPP director; (310) VPPY director; (410) VBB director; (510) VBBW director; (700) Oscillator
    • 本发明涉及能够减少面积和功耗的电压产生电路。 电压产生电路包括电压产生单元,其将每个内部电压与每个参考电压进行比较,产生每个检测信号,并且响应于振荡信号控制每个内部电压的电平; 响应于每个检测信号产生振荡控制信号的控制部分; 产生响应于振荡信号的振荡信号的振荡器; 以及选择输出部,其选择性地将响应于每个检测信号的振荡信号提供给电压产生单元中的一个或多个。 (附图标记)(210)VPP指挥; (310)VPPY主任; (410)VBB主任; (510)VBBW主任; (700)振荡器
    • 15. 发明公开
    • 반도체 장치의 전압 트리밍 회로
    • 半导体装置电压调制电路
    • KR1020130094980A
    • 2013-08-27
    • KR1020120016312
    • 2012-02-17
    • 에스케이하이닉스 주식회사
    • 임종만
    • G05F3/02G05F3/24
    • PURPOSE: A voltage trimming circuit of a semiconductor device is provided to stably change a voltage level in a low operating voltage by changing the resistance of the voltage trimming circuit. CONSTITUTION: A voltage trimming circuit of a semiconductor device comprises a control voltage generation unit (100), a voltage distribution unit (200), and a pumping voltage generation unit (300). The control voltage generation unit (100) includes a first comparison unit (110), a first driving unit (120), and a second driving unit (130) and generates a first control voltage and a second control voltage by receiving a standard voltage. The voltage distribution unit responds to a test mode signal and controls a resistance value so that a pumping voltage is outputted within a predetermined target voltage range. The voltage trimming circuit responds to the standard voltage and outputs the pumping voltage by receiving the driving voltage. If the pumping voltage is highly outputted compared to the predetermined target voltage, the resistance value of the voltage distribution unit is controlled in order to lower the pumping voltage and is controlled in order to be outputted in the predetermined target voltage range.
    • 目的:提供半导体器件的电压调整电路,通过改变电压微调电路的电阻来稳定地改变低工作电压下的电压电平。 构成:半导体器件的电压调整电路包括控制电压产生单元(100),电压分配单元(200)和泵浦电压产生单元(300)。 控制电压产生单元(100)包括第一比较单元(110),第一驱动单元(120)和第二驱动单元(130),并通过接收标准电压产生第一控制电压和第二控制电压。 电压分配单元响应测试模式信号并控制电阻值,使得在预定目标电压范围内输出泵浦电压。 电压调整电路响应标准电压,并通过接收驱动电压输出泵浦电压。 如果与预定目标电压相比输出的电压高,则控制电压分配单元的电阻值以降低泵浦电压,并且被控制以在预定目标电压范围内输出。
    • 16. 发明公开
    • 내부전압발생회로
    • 内部电压发生电路
    • KR1020110076704A
    • 2011-07-06
    • KR1020090133464
    • 2009-12-29
    • 에스케이하이닉스 주식회사
    • 임종만권기창
    • G11C5/14G11C7/20G11C7/10
    • H02M3/07
    • PURPOSE: An internal voltage generating circuit is provided to simply compose a circuit by decreasing the kinds of voltages used. CONSTITUTION: A first voltage generating unit generates a first voltage by a first power enable signal. A level detecting unit(110) detects the level of a first voltage. A second voltage generating unit generates a second voltage by the detected level from the level detecting unit. The second voltage is lower than the first voltage. An initializing unit generates the first voltage with the same level as the operation power in an initial operation. A driver is turned on with a first power-up signal and shorts a first voltage.
    • 目的:提供内部电压发生电路,通过减少所使用的电压种类来简单地组成电路。 构成:第一电压产生单元通过第一功率使能信号产生第一电压。 电平检测单元(110)检测第一电压的电平。 第二电压产生单元通过来自电平检测单元的检测电平产生第二电压。 第二电压低于第一电压。 初始化单元在初始操作中产生与操作功率相同水平的第一电压。 使用第一个上电信号打开驱动器并使第一个电压短路。
    • 18. 发明公开
    • 내부전압발생회로
    • 内部电压发生电路
    • KR1020110047802A
    • 2011-05-09
    • KR1020090104572
    • 2009-10-30
    • 에스케이하이닉스 주식회사
    • 임종만
    • G11C5/14G11C11/4074
    • G11C5/147G05F1/465G11C11/4074H03K19/0008
    • PURPOSE: An internal voltage generating circuit is provided to reduce current consumption by flowing a constant current in an NMOS transistor regardless of external voltage change. CONSTITUTION: In an internal voltage generating circuit, an amplifier(40) comprises a pre-charging unit, an input comparison unit, and an enable unit. The precharging unit precharges an external power source. The input comparison unit compares a reference voltage and a feedback voltage. The enable unit decides the decided operation of an input comparison unit. A driver(50) generates a core voltage. A voltage divider(60) divides a core voltage.
    • 目的:提供一个内部电压发生电路,用于通过在NMOS晶体管中流过恒定电流来减少电流消耗,而与外部电压变化无关。 构成:在内部电压产生电路中,放大器(40)包括预充电单元,输入比较单元和使能单元。 预充电单元预充电外部电源。 输入比较单元比较参考电压和反馈电压。 使能单元决定输入比较单元的确定的操作。 驱动器(50)产生核心电压。 分压器(60)将核心电压分压。
    • 19. 发明公开
    • 온도감지회로
    • 温度感应电路
    • KR1020100076505A
    • 2010-07-06
    • KR1020080134582
    • 2008-12-26
    • 에스케이하이닉스 주식회사
    • 임종만
    • G11C11/406
    • G01K7/01Y10S323/907
    • PURPOSE: A temperature sensing circuit is provided to improve the accuracy of temperature measurement by generating a temperature current using the base-emitter voltage deviation of two transistors and to perform a mirroring operation with respect to the temperature current in order to generate a temperature voltage. CONSTITUTION: A temperature voltage generator(410) generates a plurality of temperature voltages. A plurality of temperature voltages has a level which changes based on temperature. A comparison unit(420) compares the temperature voltages with a pre-set level of voltage. The comparison unit outputs temperature information.
    • 目的:提供温度检测电路以通过使用两个晶体管的基极 - 发射极电压偏差产生温度电流来提高温度测量的精度,并且相对于温度电流执行镜像操作以产生温度电压。 构成:温度电压发生器(410)产生多个温度电压。 多个温度电压具有基于温度而变化的电平。 比较单元(420)将温度电压与预设电压水平进行比较。 比较单元输出温度信息。