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1. 发明专利

JP4922611B2 Zinc oxide optical device, a method of manufacturing a zinc oxide light device, and a method of using the zinc oxide light device 有权
公开(公告)号：JP4922611B2
公开(公告)日：2012-04-25
申请号：JP2005372927
申请日：2005-12-26
申请人：学校法人東京理科大学
发明人：新為趙
IPC分类号： H01L33/28 , C23C14/08 , H01L21/363 , H01L33/34 , H01L33/42 , H01S5/327

2. 发明专利

JP2010278347A Method for manufacturing vertical resonance type surface emission semiconductor laser 审中-公开
标题翻译：制造垂直共振型表面发射半导体激光的方法
公开(公告)号：JP2010278347A
公开(公告)日：2010-12-09
申请号：JP2009131015
申请日：2009-05-29
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SAGA NORIHIRO , ONISHI YUTAKA
IPC分类号： H01S5/183 , H01S5/327
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a vertical resonance type surface emission semiconductor laser for providing satisfactory emission characteristics without deteriorating characteristics of tunnel junction. SOLUTION: A first distribution bragg reflector 13 is manufactured on the main surface 11a of a semiconductor substrate 11. A first n-type spacer semiconductor layer 15, an active layer 17, and a p-type spacer layer 19 are grown on the first distribution bragg reflector (DBR) 13. Then, a raw material gas and a carbon dopant are supplied to a growth furnace 10, and a p-type high-concentration semiconductor layer 21 for tunnel unction is grown on the p-type spacer semiconductor layer 19. After a p-type high-concentration semiconductor layer 21 is grown, the heat treatment 25 of the p-type high-concentration semiconductor layer 21 is carried out. After the heat treatment 25 is carried out, the raw material gas and the n-type dopant is supplied to the growth furnace 10, and the n-type concentration semiconductor layer 27 for tunnel junction is grown. A heat treatment temperature T TH is within a range of 500 to 600°C. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种制造垂直共振型面发射半导体激光器的方法，用于提供令人满意的发射特性，而不会恶化隧道结的特性。解决方案：在半导体基板11的主表面11a上制造第一分布布拉格反射器13.第一n型间隔物半导体层15，有源层17和p型间隔层19生长在第一分配布拉格反射器（DBR）13。然后，将原料气体和碳掺杂剂供给到生长炉10，并且在p型间隔物上生长用于隧道开放的p型高浓度半导体层21 半导体层19.在生长p型高浓度半导体层21之后，进行p型高浓度半导体层21的热处理25。在进行热处理25之后，将原料气体和n型掺杂剂供给到生长炉10，生长隧道结的n型浓度半导体层27。热处理温度T TH 在500〜600℃的范围内。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010016232A Semiconductor device, and semiconductor light emitting device 审中-公开
标题翻译：半导体器件和半导体发光器件
公开(公告)号：JP2010016232A
公开(公告)日：2010-01-21
申请号：JP2008175718
申请日：2008-07-04
申请人： Hitachi Ltd , Sony Corp , Sophia School Corp , ソニー株式会社 , 学校法人上智学院 , 株式会社日立製作所
发明人： KISHINO KATSUMI , NOMURA ICHIRO , TASAI KUNIHIKO , TAMAMURA KOJI , ASAZUMA YASUNORI , NAKAJIMA HIROSHI , NAKAMURA HITOSHI , FUJISAKI SUMIKO , KIKAWA TAKESHI
IPC分类号： H01S5/327
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of improving carrier concentration, and reducing electric resistance.
SOLUTION: An n-type clad layer 12 is formed into a superlattice layer formed by alternately laminating first semiconductor layers 12A and second semiconductor layers 12B. The first semiconductor layer 12A mainly contains a Se mixed crystal without containing Te, and is formed by containing, for instance, Be
x1 Mg
x2 Zn
x3 Se mixed crystal (0≤x1≤1, 0≤x2≤1, 0≤x3≤1 and x1+x2+x3=1). The second semiconductor layer 12B mainly contains a Te mixed crystal, and formed by containing, for instance, a Be
x4 Mg
x5 Zn
x6 Te mixed crystal (0≤x4≤1, 0≤x5≤1, 0≤x6≤1 and x4+x5+x6=1).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够改善载流子浓度并降低电阻的半导体发光器件。解决方案：n型覆盖层12形成为通过交替层叠第一半导体层12A和第二半导体层12B而形成的超晶格层。第一半导体层12A主要包含不含Te的Se混合晶体，并且通过例如含有例如包含ZnSb 3 x SB SB > Se混晶（0≤x1≤1,0≤x2≤1,0≤x3≤1，x1 + x2 + x3 = 1）。第二半导体层12B主要包含Te混合晶体，并且通过包含例如混合的Be x4 x5 Zn x6 晶体（0≤x4≤1,0≤x5≤1,0≤x6≤1和x4 + x5 + x6 = 1）。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP4212105B2 Zinc oxide based compound semiconductor device 有权
公开(公告)号：JP4212105B2
公开(公告)日：2009-01-21
申请号：JP2005086977
申请日：2005-03-24
申请人：ローム株式会社
发明人：健中原 , 謙太郎田村
IPC分类号： H01L33/06 , H01L33/16 , H01L33/28 , H01S5/327
CPC分类号： H01L29/221 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02472 , H01L21/02505 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/02631 , H01L29/045 , H01L29/225 , H01L29/7787 , H01L33/16 , H01L33/28 , H01S5/0422 , H01S5/2224 , H01S5/2231 , H01S5/327

6. 发明专利

JP4180917B2 A semiconductor laser and a manufacturing method thereof to form a polycrystalline ZnO 有权
公开(公告)号：JP4180917B2
公开(公告)日：2008-11-12
申请号：JP2002544820
申请日：2001-11-23
申请人：デイヴィッドジェイロジャースROGERS,David,J.
发明人：ジェイロジャースデイヴィッド
IPC分类号： H01L21/365 , H01S5/30 , H01S5/02 , H01S5/327
CPC分类号： H01S5/327 , H01S5/0213 , H01S2302/00

7. 发明专利

JP4179314B2 Full cut fracturing device of brittle materials 有权
$Full cut fracturing device of brittle materials$
公开(公告)号：JP4179314B2
公开(公告)日：2008-11-12
申请号：JP2005264727
申请日：2005-09-13
申请人：株式会社レミ
发明人：宏三浦 , 規夫軽部
IPC分类号： B28D5/00 , B23K26/06 , B23K26/08 , B23K26/40 , C03B33/09 , H01S5/323 , H01S5/327

8. 发明专利

JP4040135B2 Method for producing a ZnSe-based compound semiconductor laser 失效
公开(公告)号：JP4040135B2
公开(公告)日：2008-01-30
申请号：JP8893097
申请日：1997-03-24
申请人： Dowaホールディングス株式会社
发明人：徹佐川 , 一之梅津 , 勇西野
IPC分类号： H01L21/477 , H01S5/327 , H01L33/04 , H01L33/12 , H01L33/28 , H01L33/40 , H01S5/00

9. 发明专利

JP3940729B2 Semiconductor light-emitting device and a method of manufacturing the same 有权
公开(公告)号：JP3940729B2
公开(公告)日：2007-07-04
申请号：JP2004117183
申请日：2004-04-12
申请人：株式会社東芝
发明人：ジョン・レニー , 義弘国分 , 雅裕山本 , 真司斎藤 , 正行石川 , 英俊藤本 , 幸江西川
IPC分类号： H01L33/16 , H01L33/22 , H01L33/24 , H01L33/28 , H01L33/32 , H01S5/323 , H01S5/327

10. 发明专利

JP2005129650A Semiconductor optical element, and method for forming contact 有权
标题翻译：半导体光学元件和形成接触的方法
公开(公告)号：JP2005129650A
公开(公告)日：2005-05-19
申请号：JP2003362171
申请日：2003-10-22
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NAKAMURA TAKAO , KATAYAMA KOJI , MORI DAIKI
IPC分类号： H01L33/06 , H01L33/28 , H01S5/327 , H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/28 , H01L2224/48463
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element having a contact which can reduce an uneven distribution of a current. SOLUTION: In the semiconductor optical element, a light emitting diode includes a quantum well contact semiconductor region 3, and metallic electrodes 5. The quantum well contact semiconductor region 3 is made of a II-VI semiconductor containing zinc, selenium and tellurium. The quantum well contact semiconductor region 3 has a II-VI semiconductor region 7 and a first II-VI semiconductor layer 9. The first II-VI semiconductor layer 9 is provided between the II-VI semiconductor region 7 and the metallic electrode 5. The metallic electrode 5 is provided on the quantum well contact semiconductor region 3. The metallic electrode 5 is electrically connected to the first II-VI semiconductor layer 9. In a preferred embodiment, the first II-VI semiconductor layer 9 is made of a ZnSe semiconductor. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有可以减少电流不均匀分布的接触的半导体光学元件。解决方案：在半导体光学元件中，发光二极管包括量子阱接触半导体区域3和金属电极5.量子阱接触半导体区域3由含有锌，硒和碲的II-VI半导体制成。量子阱接触半导体区域3具有II-VI半导体区域7和第一II-VI半导体层9.第一II-VI半导体层9设置在II-VI半导体区域7和金属电极5之间。金属电极5设置在量子阱接触半导体区域3上。金属电极5与第一II-VI半导体层9电连接。在优选实施例中，第一II-VI半导体层9由ZnSe半导体。版权所有（C）2005，JPO＆NCIPI

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