PROBLEM TO BE SOLVED: To provide a method for manufacturing a vertical resonance type surface emission semiconductor laser for providing satisfactory emission characteristics without deteriorating characteristics of tunnel junction. SOLUTION: A first distribution bragg reflector 13 is manufactured on the main surface 11a of a semiconductor substrate 11. A first n-type spacer semiconductor layer 15, an active layer 17, and a p-type spacer layer 19 are grown on the first distribution bragg reflector (DBR) 13. Then, a raw material gas and a carbon dopant are supplied to a growth furnace 10, and a p-type high-concentration semiconductor layer 21 for tunnel unction is grown on the p-type spacer semiconductor layer 19. After a p-type high-concentration semiconductor layer 21 is grown, the heat treatment 25 of the p-type high-concentration semiconductor layer 21 is carried out. After the heat treatment 25 is carried out, the raw material gas and the n-type dopant is supplied to the growth furnace 10, and the n-type concentration semiconductor layer 27 for tunnel junction is grown. A heat treatment temperature T TH is within a range of 500 to 600°C. COPYRIGHT: (C)2011,JPO&INPIT