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2. 发明专利

JPWO2009153870A1 相変化メモリ素子、相変化メモリセル、真空処理装置及び相変化メモリ素子の製造方法有权
公开(公告)号：JPWO2009153870A1
公开(公告)日：2011-11-24
申请号：JP2010508659
申请日：2008-06-18
申请人：キヤノンアネルバ株式会社
发明人：ヨンスックチョイ , ヨンスックチョイ , 孝二恒川 , 孝二恒川
IPC分类号： H01L27/105 , C23C14/34 , H01L45/00
CPC分类号： H01L27/2436 , G11C13/0004 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1625 , H01L45/1675 , H01L45/1683 , Y10S438/90
摘要：相変化メモリ素子は、ペロブスカイト型構造を有する材料により形成されるペロブスカイト層と、ペロブスカイト層の上に形成され、ペロブスカイト層を介して通電されることにより結晶状態またはアモルファス状態に相変化する相変化記録材料層と、を有することを特徴とする。

3. 发明专利

JP4808966B2 Resistance change function body, as well as memory, and an electronic device having the same 有权
公开(公告)号：JP4808966B2
公开(公告)日：2011-11-02
申请号：JP2004537593
申请日：2003-09-18
申请人：シャープ株式会社
发明人：浩岩田 , 誠三柿本 , 暢俊洗
IPC分类号： H01L27/10 , H01L21/8247 , H01L27/24 , H01L29/66 , H01L29/788 , H01L29/792 , H01L29/861 , H01L45/00
CPC分类号： H01L29/8615 , G11C13/0004 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/10 , H01L45/1206 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/1608 , Y10S438/90

4. 发明专利

JP2010040820A Nonvolatile storage device and method of manufacturing the same 有权
标题翻译：非易失存储器件及其制造方法
公开(公告)号：JP2010040820A
公开(公告)日：2010-02-18
申请号：JP2008202771
申请日：2008-08-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KINOSHITA KATSUJI , SASAKO YOSHITAKA , TAKAURA NORIKATSU
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/144 , G11C11/5678 , G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/1675 , Y10S438/90
摘要： PROBLEM TO BE SOLVED: To provide a technique for achieving a memory cell structure in which the temperature of a diode does not easily rise even when the temperature of phase change materials rises in a non-volatile storage device having a phase change memory configured of cross point type memory cells obtained by combining storage elements made of phase change materials with selection elements made of diodes. SOLUTION: Memory cells configured of storage elements made of phase change materials 7 and selection elements made of diodes with the multilayer structure of a first polycrystalline silicon film 3, a second polycrystalline silicon film 4 and a third polycrysalline silicon film 5 are arranged at an intersection between a plurality of first metal wiring 2 extended along a first direction and a plurality of third metal wiring 9 extended along a second direction perpendicular to the first direction, and an interlayer film (for example, a second interlayer film 11) is formed between the adjacent selection elements and the adjacent storage elements, and a void (for example, a gap 12b) is formed in the interlayer film installed between the adjacent storage element. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于实现即使当相变材料的温度在具有相变存储器的非易失性存储装置中升高时二极管的温度也不容易上升的存储单元结构的技术由通过将由相变材料制成的存储元件与由二极管制成的选择元件组合而获得的交叉点型存储单元构成。解决方案：配置有由相变材料7构成的存储元件的存储单元7和由具有第一多晶硅膜3，第二多晶硅膜4和第三聚晶硅膜5的多层结构的二极管制成的选择元件布置在沿着第一方向延伸的多个第一金属布线2和沿着与第一方向垂直的第二方向延伸的多个第三金属布线9之间的交点处，以及中间膜（例如，第二中间膜11）形成在相邻的选择元件和相邻的存储元件之间，并且在安装在相邻的存储元件之间的层间膜中形成空隙（例如间隙12b）。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2008053310A Semiconductor storage device and its manufacturing method 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：JP2008053310A
公开(公告)日：2008-03-06
申请号：JP2006225768
申请日：2006-08-22
申请人： Elpida Memory Inc , エルピーダメモリ株式会社
发明人： HAYAKAWA TSUTOMU
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/143 , H01L27/2436 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/1293 , H01L45/144 , H01L45/1683 , Y10S438/90
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device, in which Joule heat used for a phase change of a phase change material can be applied more efficiently to the phase change material, and to provide a manufacturing method capable of manufacturing the same easily.
SOLUTION: An upper electrode 66 surrounds a phase change layer 63 from outside along a plane that intersects the direction of lamination at right angles. The upper electrode 66 is disposed in a second residual region 85 outside a first region 84, so that the upper electrode 66 never overlaps with a heater electrode 43 in the direction of lamination. It is preferable that the upper electrode 66 is disposed in a third region 86 that extends from the phase change layer 63 along a plane that intersects the direction of lamination at right angles. It is preferable that the upper electrode 66 is not present in a fourth region 87 that extends in the direction of lamination from the phase change layer 63 and disposed in a fifth region 88 outside of the fourth region 87.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体存储装置，其中用于相变材料的相变的焦耳热可以更有效地应用于相变材料，并且提供能够制造相变材料的制造方法一样容易解决方案：上电极66沿着与垂直方向的层叠方向相交的平面从外部围绕相变层63。上电极66设置在第一区域84外部的第二残留区域85中，使得上电极66不会在叠层方向上与加热器电极43重叠。优选地，上电极66设置在从相变层63沿着与层叠方向成直角相交的平面延伸的第三区域86中。优选地，上电极66不存在于从相变层63在层叠方向上延伸并设置在第四区域87外部的第五区域88中的第四区域87中。（C ）2008，JPO＆INPIT

6. 发明专利

JP6045873B2 半導体装置の製造方法有权
公开(公告)号：JP6045873B2
公开(公告)日：2016-12-14
申请号：JP2012223643
申请日：2012-10-05
申请人：ルネサスエレクトロニクス株式会社
发明人：前川考志 , 三原竜善
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L21/823468 , H01L21/26513 , H01L21/266 , H01L21/31116 , H01L21/823418 , H01L21/823462 , H01L29/66477 , H01L29/6653 , H01L29/66553 , Y10S257/90 , Y10S438/90

7. 发明专利

JP5342189B2 Non-volatile memory device and a method for manufacturing the same 有权
公开(公告)号：JP5342189B2
公开(公告)日：2013-11-13
申请号：JP2008202771
申请日：2008-08-06
申请人：株式会社日立製作所
发明人：勝治木下 , 佳孝笹子 , 則克高浦
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/144 , G11C11/5678 , G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/1675 , Y10S438/90
摘要： Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.

8. 发明专利

JP4607594B2 Structured silicon anode 有权
公开(公告)号：JP4607594B2
公开(公告)日：2011-01-05
申请号：JP2004549349
申请日：2003-11-05
申请人：ネグゼオン・リミテッドNexeon Ltd
发明人：グリーン、ミノ
IPC分类号： H01M4/38 , H01M4/134 , H01M4/1395 , H01M4/66 , H01M10/052 , H01M10/0525 , H01M10/36
CPC分类号： H01M10/052 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/661 , H01M2004/027 , Y10S438/90 , Y10S977/701 , Y10S977/81 , Y10S977/932 , Y10S977/948 , Y10T29/49108

9. 发明专利

JPWO2007108050A1 カーボンナノチューブ構造体、カーボンナノチューブの作製方法、電気的機能装置、カーボンナノチューブ成長用触媒微粒子有权
公开(公告)号：JPWO2007108050A1
公开(公告)日：2010-05-13
申请号：JP2008542124
申请日：2006-03-16
申请人：富士通株式会社
发明人：大雄近藤 , 大雄近藤 , 佐藤　信太郎 , 信太郎佐藤
IPC分类号： C01B31/02 , B01J23/745 , B01J23/75
CPC分类号： C30B29/602 , B01J21/06 , B01J21/066 , B01J23/745 , B01J23/75 , B01J37/349 , B22F2998/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02 , Y10S438/90 , Y10S977/742 , Y10S977/762 , Y10S977/779 , B22F1/0018
摘要：カーボンナノチューブの作製方法は、(a)基材上にFe−Al、Zr−Co、Hf−Coのいずれかを含む触媒微粒子を堆積する工程と、(b)触媒微粒子を堆積した基材上にカーボンナノチューブを成長する工程と、を含む。

10. 发明专利

JP4253038B2 Non-volatile memory device and a method of manufacturing the same, and the non-volatile semiconductor device using the non-volatile memory element 有权
公开(公告)号：JP4253038B2
公开(公告)日：2009-04-08
申请号：JP2008535819
申请日：2008-03-26
申请人：パナソニック株式会社
发明人：覚三谷 , 良子宮永 , 浩一小佐野 , 一彦島川 , 俊作村岡 , 幸治片山 , 好彦神澤 , 覚藤井 , 剛高木
IPC分类号： H01L27/10 , G11C13/00 , H01L45/00 , H01L49/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0

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