专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012124320A Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：JP2012124320A
公开(公告)日：2012-06-28
申请号：JP2010273739
申请日：2010-12-08
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , SAITO KAZUYA , KATAGIRI HIROAKI , KOMATSU TAKASHI , OSAWA MASATO , HASHIMOTO NATSUKI , SAKIO SUSUMU , KANAZAWA KEISUKE , TAKAGI MAKIKO
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell which sufficiently secures power collection property of finger electrodes, increases solar light reaching a semiconductor element, and achieves high generation efficiency.SOLUTION: A connection part P between a first region 22a and a second region 22b of a finger electrode 22 is formed by the first region 22a of a predetermined length which overlaps on the second region 22a made of a conductive metal.
摘要翻译：要解决的问题：为了提供充分确保手指电极的集电性的太阳能电池，增加到达半导体元件的太阳光，并且实现高发电效率。解决方案：指状电极22的第一区域22a和第二区域22b之间的连接部分P由与由导电金属制成的第二区域22a重叠的预定长度的第一区域22a形成。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2014077161A Film deposition apparatus and substrate holder 审中-公开
标题翻译：薄膜沉积装置和基板支架
公开(公告)号：JP2014077161A
公开(公告)日：2014-05-01
申请号：JP2012224451
申请日：2012-10-09
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： HASEGAWA TAKEYUKI , NAGASAWA SHOJI , OTOMO MASAHIKO , MATSUMOTO TAKESHI , KATAGIRI HIROAKI , OTA ATSUSHI , WATAI MIWA
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a substrate holder in which good film deposition processing can be implemented on both surfaces of substrates-under-processing held by the substrate holder.SOLUTION: A substrate holder 11 comprises openings 22 which exposes surfaces of substrates-under-processing S at a bottom section of a concavity 21 housing the substrates-under-processing S, and supporting sections 23 which support the substrates-under-processing S by contacting outer peripheral edges of the substrates-under-processing S. Outer surfaces of the supporting sections 23 are constructed so that their tip sides are slant planes 24 slanting towards the substrates-under-processing S. The substrates-under-processing S are carried to a processing section 50 while being held in the substrate holder 11, and film deposition processing on both surfaces of the substrates-under-processing S is implemented.
摘要翻译：要解决的问题：提供一种成膜装置和衬底保持器，其中可以在由衬底保持器保持的衬底下的两个表面上实现良好的成膜处理。解决方案：衬底保持器11包括露出的开口22 在处理下基板S的凹部21的底部的基板下面的基板S的表面，以及支撑部23，其支撑下面的基板S，其中，通过接触下面的基板的外周边缘支撑部23的外表面被构造成使得它们的末端侧是朝向下面处理的基板S倾斜的倾斜平面24.在被保持在基板中的基底处理S被运送到处理部分50 保持器11，并且在基底处理S的两个表面上进行成膜处理。

3. 发明专利

JP2012119537A Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：JP2012119537A
公开(公告)日：2012-06-21
申请号：JP2010268820
申请日：2010-12-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , SAITO KAZUYA , KATAGIRI HIROAKI , KOMATSU TAKASHI , OKO YOSHIKI , KANAZAWA KEISUKE , TAKAGI MAKIKO , NISHIKATA YASUSHI , OSONO SHUJI , SAKATA GENJI , YOKOO HIDEKAZU , SUZUKI HIDEO , TOMITA MASATO , NISHIBASHI TSUTOMU
IPC分类号： H01L31/04
CPC分类号： Y02E10/546 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device which can reduce the number of manufacturing steps of a photoelectric conversion device having an impurity region on the side surface of a semiconductor substrate covered with a passivation film.SOLUTION: A solar cell comprises a silicon substrate 11 having a light-receiving surface 11a, and a rear surface 11b on the reverse side of the light-receiving surface 11a is covered with a silicon oxide film 13 and a silicon nitride film 14 while having an N type impurity region 11n and a P type impurity region. When the solar cell is manufactured, the silicon oxide film 13 and the silicon nitride film 14 are formed on the rear surface 11b. Subsequently, an ion beam 23a of N type impurity element is irradiated toward the rear surface 11b from above the silicon oxide film 13 and silicon nitride film 14 thus forming an N type impurity region 11n in the rear surface 11b. An ion beam 24a of P type impurity element is also irradiated toward the rear surface 11b from above the silicon oxide film 13 and silicon nitride film 14 thus forming a P type impurity region in the rear surface 11b.
摘要翻译：解决的问题：提供一种制造光电转换装置的方法，其可以减少在被钝化膜覆盖的半导体衬底的侧表面上具有杂质区的光电转换装置的制造步骤数量。解决方案：太阳能电池包括具有光接收表面11a的硅衬底11，并且在受光面11a的背面上的后表面11b被氧化硅膜13覆盖，并且氮化硅膜同时具有N型杂质区域11n和P型杂质区域。当制造太阳能电池时，在后表面11b上形成氧化硅膜13和氮化硅膜14。随后，从后面11b中形成N型杂质区域11n的氧化硅膜13和氮化硅膜14的上方向背面11b照射N型杂质元素的离子束23a。 P型杂质元素的离子束24a也从氧化硅膜13和氮化硅膜14的背面11b向背面11b照射，从而形成P型杂质区。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012060080A Crystal solar battery and method for producing the same 审中-公开
标题翻译：水晶太阳能电池及其制造方法
公开(公告)号：JP2012060080A
公开(公告)日：2012-03-22
申请号：JP2010204734
申请日：2010-09-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , KIKUCHI MAKOTO , KATAGIRI HIROAKI , KOMATSU TAKASHI , KIKUCHI YUKIO , OSONO SHUJI , NISHIKATA YASUSHI , TAKAGI MAKIKO , KANAZAWA KEISUKE , SAKAO YOSUKE , ASARI SHIN , SAITO KAZUYA , OTA ATSUSHI
IPC分类号： H01L31/04
CPC分类号： H01L31/028 , H01L31/03685 , H01L31/03687 , H01L31/03762 , H01L31/03765 , H01L31/056 , H01L31/0747 , H01L31/1804 , H01L31/1812 , H01L31/202 , H01L31/204 , Y02E10/52 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a solar battery with further improved photoelectric transfer characteristic.SOLUTION: A solar battery of the present invention is a crystal solar battery having a crystalline substrate that implements a photoelectric conversion function between a light-receiving surface for receiving light and a reverse surface opposite to the light-receiving surface. The crystalline substrate is a flat base substrate including a p-type or n-type monocrystalline or polycrystalline silicon, the crystalline substrate comprises: a first semiconductor layer comprising an amorphous or microcrystalline silicon of reverse or same conductivity type with regard to the base substrate disposed on the light-receiving surface side of the base substrate; a second semiconductor layer comprising an amorphous or microcrystalline silicon of reverse conductive type with regard to the first semiconductor layer disposed on the rear side of the base substrate; and a silicon oxide layer disposed between the base substrate and the first semiconductor layer or between the base substrate and the second semiconductor substrate.
摘要翻译：要解决的问题：提供具有进一步改善的光电转移特性的太阳能电池。解决方案：本发明的太阳能电池是具有在用于接收光的受光面与与受光面相反的反面之间实现光电转换功能的晶体基板的晶体太阳能电池。晶体衬底是包括p型或n型单晶或多晶硅的平坦基底，晶体衬底包括：第一半导体层，其包括相对于基底衬底布置的反向或相同导电类型的非晶或微晶硅在基底基板的受光面侧; 第二半导体层，其包括相对于设置在所述基底基板的后侧上的所述第一半导体层的反向导电型的非晶或微晶硅; 以及设置在所述基底基板和所述第一半导体层之间或所述基底基板和所述第二半导体基板之间的氧化硅层。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2009097057A Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：JP2009097057A
公开(公告)日：2009-05-07
申请号：JP2007272054
申请日：2007-10-19
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： USHIYAMA FUMIZO , ODAGI HIDEYUKI , KUBO MASASHI , YAMAMOTO KAZUTO , KATAGIRI HIROAKI
IPC分类号： C23C14/35 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To improve target use efficiency by operating magnetron-magnet apparatuses having different sizes in such a manner that their erosion regions do not overlap.
SOLUTION: First and second magnetron-magnet apparatuses having different sizes 20
1 and 20
2 are circulated and moved at the back surface of first and second rectangular targets 21a and 21b so as to form four erosion regions. When the first and second magnetron-magnet apparatuses 20
1 and 20
2 comes in and out of the back surface position by crossing the shorter side of the first and second targets 21a and 21b, the erosion regions have a linear shape along the long side, thereby sputtering a large area.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过以不侵蚀区域不重叠的方式操作具有不同尺寸的磁控管 - 磁体装置来提高目标的使用效率。解决方案：具有不同尺寸20 1 和20 2 的第一和第二磁控管磁铁装置在第一和第二矩形对象21a的背面被循环移动， 21b以形成四个侵蚀区域。当第一和第二磁控管磁铁装置20 20 2 通过穿过第一和第二靶21a的短边而进入和离开背面位置时如图21b所示，侵蚀区域沿着长边具有线性形状，从而溅射大面积。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008081805A Sputtering apparatus and sputtering method 有权
标题翻译：溅射装置和喷射方法
公开(公告)号：JP2008081805A
公开(公告)日：2008-04-10
申请号：JP2006264231
申请日：2006-09-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KUBO MASASHI , ODAGI HIDEYUKI , KATAGIRI HIROAKI
IPC分类号： C23C14/35
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a sputtering apparatus which can uniformize erosion depth. SOLUTION: This sputtering apparatus has a magnetic circuit 12 which reciprocates between end-points A and B in the vicinities of both ends in a longitudinal direction of a target 10, along the longitudinal direction. When the magnetic circuit 12 moves from one end-point to the other end-point, the magnetic circuit 12 gradually increases the speed from a constant speed V 2 as it approaches the end-point; after the speed has reached a high speed V 3 , the magnetic circuit 12 rapidly decreases the speed; when reversing the direction of movement, the magnetic circuit 12 rapidly increases the speed up to a high speed V 1 , and then gradually decreases the speed to make the magnetic circuit 12 move at the constant speed V 2 . The magnetic circuit 12 moves at a higher speed in the vicinities of the end-points (A) and (B) than in the central area, and the target 10 is eroded into uniform depth in the longitudinal direction. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以使侵蚀深度均匀化的溅射装置。解决方案：该溅射装置具有磁路12，该磁路12沿着纵向方向在靶10的纵向方向上的两端附近的端点A和B之间往复运动。当磁路12从一个端点移动到另一个端点时，磁路12在接近端点时从恒定速度V SB> 2逐渐增加速度; 在速度达到高速V <3> 3 之后，磁路12迅速降低速度; 当反转运动方向时，磁路12迅速地将速度提高到高速V SB> 1，然后逐渐降低速度使得磁路12以恒定速度V 2 。磁路12在端点（A）和（B）附近以比在中心区域更高的速度移动，并且靶10在纵向上被侵蚀成均匀的深度。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2012124328A Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：JP2012124328A
公开(公告)日：2012-06-28
申请号：JP2010273826
申请日：2010-12-08
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , SAITO KAZUYA , KATAGIRI HIROAKI , KOMATSU TAKASHI , SAKIO SUSUMU , TAKAGI MAKIKO , KANAZAWA KEISUKE , OSAWA MASATO , TEI KYUKO , HASHIMOTO NATSUKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell which sufficiently secures power collection property of finger electrodes, increases solar light reaching a semiconductor element, and achieves high generation efficiency.SOLUTION: Each finger electrode 22 has at least two regions made of materials which are different from each other, a first region 22a formed by a transparent conductor and a second region 22b formed by a conductive metal. The first region 22a may be formed by the transparent conductor, for example, ITO (indium oxide-tin), ZnO (zinc oxide), and TO (tin oxide). According to this embodiment, for example, ITO is used. On the other hand, the second region may be formed by the conductive metal, for example, Ag (silver), Al (aluminum), Au (gold), and Cu (copper).
摘要翻译：要解决的问题：为了提供充分确保手指电极的集电性的太阳能电池，增加到达半导体元件的太阳光，并且实现高发电效率。解决方案：每个指状电极22具有由彼此不同的材料制成的至少两个区域，由透明导体形成的第一区域22a和由导电金属形成的第二区域22b。第一区域22a可以由透明导体形成，例如ITO（氧化铟锡），ZnO（氧化锌）和TO（氧化锡））。根据本实施方式，例如使用ITO。另一方面，第二区域可以由导电金属形成，例如Ag（银），Al（铝），Au（金）和Cu（铜）。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2009167492A Film deposition source, and sputtering system 审中-公开
标题翻译：薄膜沉积源和溅射系统
公开(公告)号：JP2009167492A
公开(公告)日：2009-07-30
申请号：JP2008009147
申请日：2008-01-18
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： MIKI YOSHIMITSU , ODAGI HIDEYUKI , KUBO MASASHI , USHIYAMA FUMIZO , KATAGIRI HIROAKI
IPC分类号： C23C14/35
摘要： PROBLEM TO BE SOLVED: To provide a film deposition source which improves the using efficiency of a target, and to provide a sputtering system.
SOLUTION: A hole 26 is formed at a target 21, and a magnet apparatus 20 moves around the hole 26 of the target 21 by a magnet moving apparatus 4. In this way, an erosion region formed by the magnetic apparatus 20 is formed around the hole 26, and the target 21 is not present at a part serving as into a non-erosion region, thus the using efficiency of the target 21 is high. Since a grounding electrode 25 is arranged on the bottom face of the hole 26, a member exposed to the inside of the hole 26 is not sputtered.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供提高靶的使用效率并提供溅射系统的成膜源。解决方案：在目标21处形成孔26，磁体装置20通过磁体移动装置4围绕目标21的孔26移动。这样，由磁性装置20形成的侵蚀区域是形成在孔26周围，并且目标21不存在于用作非侵蚀区域的部分，因此目标21的使用效率高。由于接地电极25布置在孔26的底面上，所以暴露于孔26的内部的构件不会被溅射。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008081807A Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：JP2008081807A
公开(公告)日：2008-04-10
申请号：JP2006264236
申请日：2006-09-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KUBO MASASHI , ODAGI HIDEYUKI , KATAGIRI HIROAKI
IPC分类号： C23C14/35
摘要： PROBLEM TO BE SOLVED: To improve a utilization ratio of a target by making an erosion depth of a circular arc part equivalent to that of other parts or shallower, and to reduce the replacement frequency of the target.
SOLUTION: This sputtering apparatus has a magnetic circuit 20 installed such that the distance between the magnetic circuit 20 and the surface of the target 12 while the magnetic circuit 20 moves in a circular arc part R
A is longer than that while it moves in a linear part R
L , and controls the strength of a magnetic field on the surface of the target 12 in a circular arc part R
A lower than that in the linear part R
L . Then, an erosion depth in the circular arc part R
A is decreased, and the life of the target 12 is extended. Instead of changing the distance, a weakening member for weakening the strength of the magnetic field on the surface of the target 12 may be placed in a circular arc part R
A , or an intensifying member for intensifying the strength of the magnetic field on the surface of the target 12 can be placed in a linear part R
L .
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过使圆弧部分的侵蚀深度等于其它部分的腐蚀深度或更浅的方式来提高目标的利用率，并且降低目标的替换频率。解决方案：该溅射装置具有安装成使磁路20与目标12的表面之间的距离同时磁路20以圆弧部分R A移动的磁路20，比直线部分R L 移动时长，并且在圆弧部分R SB> A 中控制目标12的表面上的磁场的强度，低于线性部分R L 。然后，圆弧部分R A 中的侵蚀深度减小，并且靶材12的寿命延长。代替改变距离，用于削弱目标12的表面上的磁场强度的弱化构件可以放置在圆弧部分R 中，或者用于增强强度的增强构件目标12的表面上的磁场可以被放置在线性部分R L 中。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007242793A Metal film, method of forming the same, and liquid crystal display device 有权
标题翻译：金属膜，其形成方法和液晶显示装置
公开(公告)号：JP2007242793A
公开(公告)日：2007-09-20
申请号：JP2006061244
申请日：2006-03-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OISHI YUICHI , NAKAMURA KYUZO , ISHIBASHI AKIRA , TANI NORIAKI , KIYOTA JUNYA , UKISHIMA YOSHIYUKI , KATAGIRI HIROAKI , TAKAHASHI AKIHISA
IPC分类号： H01L29/786 , C22C21/00 , C23C14/14 , G02F1/1343 , G02F1/1368 , H01L21/28 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To form a metal film having low constant resistance with respect to an ITO film. SOLUTION: Indium and/or tin is contained as an additive in the metal film 25 the main component of which is aluminum. The metal film 25 is annealed to form a high concentration layer 25I of the additive(s) near the front face or rear face inside the metal film 25. When oxygen is isolated from the ITO film formed on the surface of the metal film 25, an indium oxide or a tin oxide having conductivity is formed but an insulating aluminum oxide is hardly formed. Therefore, an increase in contact resistance can be prevented. COPYRIGHT: (C)2007,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式