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1. 发明专利

JP2013247157A Dry etching device 审中-公开
标题翻译：干蚀设备
公开(公告)号：JP2013247157A
公开(公告)日：2013-12-09
申请号：JP2012117936
申请日：2012-05-23
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SAKAO YOSUKE , TAKEI HIDEO , SATO MUNEYUKI , IKEDA SATOSHI , OTAKE FUMITO
IPC分类号： H01L21/3065 , H01L31/04 , H05H1/46
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a dry etching device which forms a textured structure on a silicon substrate as quickly as possible and achieves good mass productivity.SOLUTION: A dry etching device EM of this invention is used for forming a textured structure on a surface of a silicon substrate W and includes: a first electrode 2 and a second electrode 4 which are disposed in a vacuum processing chamber 12 being spaced a predetermined distance away from each other. The first electrode 2 serves as substrate holding means holding the silicon substrate in the vacuum processing chamber, and the second electrode serves as a shower plate which introduces an etching gas into the vacuum processing chamber at reduced pressure and is disposed facing the silicon substrate. A first power source 3which inputs AC power to the first electrode and a second power source 3which inputs high frequency power to the second electrode are provided. A frequency of the AC power input to the first electrode is set as a first frequency and a frequency of the AC power input to the second electrode is set as a second frequency. The first frequency is set to 4 MHz or higher and the second frequency is set to three times as high as the first frequency or higher.
摘要翻译：要解决的问题：提供一种在硅衬底上尽可能快地形成纹理结构的干蚀刻装置，并且实现良好的批量生产。本发明的干蚀刻装置EM用于在表面上形成纹理结构的硅基板W，并且包括：第一电极2和第二电极4，其设置在彼此间隔开预定距离的真空处理室12中。第一电极2用作在真空处理室中保持硅衬底的衬底保持装置，并且第二电极用作在减压下将蚀刻气体引入真空处理室中并且面对硅衬底设置的喷淋板。提供了向第一电极输入AC电力的第一电源3和向第二电极输入高频电力的第二电源3。将输入到第一电极的AC电力的频率设定为第一频率，将输入到第二电极的AC电力的频率设定为第二频率。第一频率设定为4MHz以上，第二频率设定为第一频率以上的三倍。

2. 发明专利

JP2013194250A Method and device for hardening metal oxide film 有权
标题翻译：用于硬化金属氧化物膜的方法和装置
公开(公告)号：JP2013194250A
公开(公告)日：2013-09-30
申请号：JP2012059457
申请日：2012-03-15
申请人： Ulvac Japan Ltd , 株式会社アルバック , Central Japan Railway Co , 東海旅客鉄道株式会社
发明人： TAKEI HIDEO , SATO MUNEYUKI , MOMONO TAKESHI , YOSHIOKA DAISUKE , OKAZAKI SOHEI , SHICHI TETSUYA
IPC分类号： C23C14/58 , B05C9/12 , B05D3/04 , B05D7/24 , C01B13/14 , C23C14/06 , G02B1/10 , G02B1/14
摘要： PROBLEM TO BE SOLVED: To effectively harden a metal oxide film formed on a resin plate surface, and to use resin as a window material of a transport machine.SOLUTION: A method for hardening a metal oxide film includes a first step for forming a metal oxide film MO containing at least one metal selected from aluminum, titanium, zirconium, niobium and hafnium on a surface of a resin plate S, and a second step for intermittently irradiating an oxygen ion to the metal oxide film MO by an ion gun 3 in a treatment chamber 10 under reduced pressure. The method also includes a third step for exposing the metal oxide film MO to a plasma atmosphere P of inert gas in the treatment chamber 10 under the reduced pressure while the oxygen ion is not irradiated.
摘要翻译：要解决的问题：有效地硬化形成在树脂板表面上的金属氧化物膜，并使用树脂作为输送机的窗口材料。解决方案：一种用于硬化金属氧化物膜的方法包括用于形成金属的第一步骤在树脂板S的表面上含有选自铝，钛，锆，铌和铪中的至少一种金属的氧化物膜MO，以及通过离子枪3间歇地向金属氧化膜MO间歇地照射氧离子的第二工序减压处理室10。该方法还包括第三步骤，在不照射氧离子的同时，在减压下将金属氧化物膜MO暴露于处理室10中的惰性气体的等离子体气氛P。

3. 发明专利

JP2013168505A Method for forming texture structure 审中-公开
标题翻译：形成纹理结构的方法
公开(公告)号：JP2013168505A
公开(公告)日：2013-08-29
申请号：JP2012030809
申请日：2012-02-15
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TAKEI HIDEO , SATO MUNEYUKI , IKEDA SATOSHI , SAKAO YOSUKE , OTAKE FUMITO
IPC分类号： H01L21/3065 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a texture structure with a low running cost capable of efficiently removing a polymer membrane which fulfilled a role of a self-mask during silicon substrate etching.SOLUTION: A method for forming a texture structure on a surface of a silicon substrate W comprises the steps of: introducing an etching gas including a COFgas, a halogen-containing gas, and an oxygen gas into a processing chamber 11 under reduced pressure in which the silicon substrate was arranged and supplying discharge power to etch a surface of the silicon substrate (first step); and washing the silicon substrate W etched in the first step with water (second step).
摘要翻译：要解决的问题：提供一种形成具有低运行成本的织构结构的方法，能够有效地去除在硅衬底蚀刻期间发挥自掩蔽的作用的聚合物膜。解决方案：一种用于形成纹理结构的方法硅衬底W的表面包括以下步骤：将包括COF气体，含卤素气体和氧气的蚀刻气体在其中布置硅衬底的减压下引入处理室11中，并将放电电力提供给蚀刻硅衬底的表面（第一步）; 并用水洗涤在第一步骤中蚀刻的硅衬底W（第二步骤）。

4. 发明专利

JP2013008753A Method for producing spherical photoelectric conversion element 审中-公开
标题翻译：制造球形光电转换元件的方法
公开(公告)号：JP2013008753A
公开(公告)日：2013-01-10
申请号：JP2011138896
申请日：2011-06-22
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OTAKE FUMITO , SATO MUNEYUKI , TAKEI HIDEO , IKEDA SATOSHI , SAKAO YOSUKE
IPC分类号： H01L31/04
CPC分类号： Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a spherical photoelectric conversion element with a texture structure which can deposit with excellent coverage even when a prescribed thin film is formed in a post-process while effectively exhibiting diffusion confinement effect.SOLUTION: A method for producing a spherical photoelectric conversion element of this invention comprises a first step of forming an uneven shape on the external surface of a spherical photoelectric conversion element CE and imparting a texture structure 15, a second step of filling each recess 15b of the uneven shape with an organic compound so that only tip parts of each protrusion 15a of the uneven shape are exposed, and a third step of making the tip parts round by wet etching only the exposed tip parts with the organic compound as a mask.
摘要翻译：解决的问题：提供一种具有纹理结构的球形光电转换元件的制造方法，其即使在有效地显示扩散限制效果的情况下在后处理中形成规定的薄膜时也能够以优异的覆盖率沉积。解决方案本发明的球形光电转换元件的制造方法包括在球面光电转换元件CE的外表面上形成凹凸形状并赋予纹理结构15的第一步骤，并且赋予纹理结构15，第二步骤，具有有机化合物的不平坦形状的凹部15b，使得只有不平坦形状的每个突起15a的尖端部分露出，并且第3步骤是通过用有机化合物湿法蚀刻仅露出的尖端部分来使尖端部分成圆形面具。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012015419A Method of manufacturing transparent conductive substrate for solar battery and transparent conductive substrate for solar battery 审中-公开
标题翻译：用于太阳能电池的透明导电基板和太阳能电池透明导电基板的制造方法
公开(公告)号：JP2012015419A
公开(公告)日：2012-01-19
申请号：JP2010152384
申请日：2010-07-02
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SAKIO SUSUMU , SAKAO YOSUKE , HIRAOKA KENSUKE , TAKEI HIDEO , SATO MUNEYUKI , KANAZAWA KEISUKE , SAITO KAZUYA
IPC分类号： H01L31/04
CPC分类号： Y02E10/545 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a method of simply manufacturing a transparent conductive substrate in which a light trapping efficiency in a power generation layer can be enhanced for both long wavelength light and short wavelength light without reducing light transmissivity, thereby increasing a power generation efficiency of a thin film solar battery.SOLUTION: A method of manufacturing a transparent conductive substrate comprises at least a step A of applying sol-gel liquid on a transparent substrate, a step B of pressing a mold having a reversed pattern of a desired irregular pattern against the sol-gel liquid to transfer the irregular pattern onto the sol-gel liquid, a step C of solidifying the sol-gel liquid so that a silicon oxide film having the irregular pattern formed on the surface thereof is formed on the transparent substrate, and a step D of forming a transparent conductive film on the silicon oxide film. The irregular pattern comprises a first irregular pattern having a predetermined period, and a second irregular pattern which is disposed on uneven portions constituting the first irregular pattern and has a shorter period than the first irregular pattern.
摘要翻译：解决的问题：为了提供简单地制造透明导电基板的方法，其中可以在不降低光透射率的情况下对长波长光和短波长光两者的发光层中的光捕获效率提高，从而增加薄膜太阳能电池的发电效率。解决方案：制造透明导电基材的方法至少包括在透明基材上涂布溶胶 - 凝胶液体的步骤A，将具有所需不规则图案的反转图案的模具压在溶胶 - 凝胶上的步骤B，将不规则图案转印到溶胶 - 凝胶液上的步骤C，凝胶化溶胶凝胶液体的步骤C，形成在其表面上形成有凹凸图案的氧化硅膜，步骤D 在氧化硅膜上形成透明导电膜。不规则图案包括具有预定周期的第一不规则图案和布置在构成第一不规则图案的不平坦部分上并且具有比第一不规则图案更短的周期的第二不规则图案。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011035263A Method and device for forming texture for solar cell using natural oxide film 审中-公开
标题翻译：使用天然氧化膜形成太阳能电池纹理的方法和装置
公开(公告)号：JP2011035263A
公开(公告)日：2011-02-17
申请号：JP2009181631
申请日：2009-08-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SAKAO YOSUKE , TAKEI HIDEO , IKEDA SATOSHI , SATO MUNEYUKI , MIZUNO KENJI , SUZUKI MINORU , KAWAI TOSHIHIRO , ITO TSUTOMU
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for forming a texture for a solar cell using a natural oxide film that forms the texture using a deposition (deposit layer) of SiO
2 as a self-mask by two gas systems.
SOLUTION: The two gas systems of a chlorine gas and an oxygen gas are used to form the texture on a surface of a substrate used to manufacture a crystal-based solar cell, and the texture is formed by using the deposition of SiO
2 produced during etching of the substrate as the self-mask.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用使用SiO 2 SB（2）的沉积（沉积层）形成纹理的天然氧化膜形成太阳能电池的织构的方法和装置，两个气体系统的自我掩蔽。解决方案：使用氯气和氧气的两种气体系统在用于制造晶体太阳能电池的基板的表面上形成纹理，并且通过使用SiO 在作为自掩模的衬底的蚀刻期间产生的 2 。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2011035262A Processing method and processing apparatus for manufacture of crystal-based solar cell 审中-公开
标题翻译：基于晶体的太阳能电池的制造方法和加工装置
公开(公告)号：JP2011035262A
公开(公告)日：2011-02-17
申请号：JP2009181627
申请日：2009-08-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SAKAO YOSUKE , TAKEI HIDEO , SATO MUNEYUKI , SUZUKI MINORU , ITO TSUTOMU , KAWAI TOSHIHIRO , MATSUMOTO KOJI , OMORI MIKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus that perform processes from removal of a damage layer of a substrate formed during slicing to texture formation step together in a lump through dry etching. SOLUTION: In the dry etching processing in which a substrate electrode mounted with a substrate, used to manufacture the crystal-based solar cell, to be subjected to etching processing is provided in a vacuum processing chamber and the substrate mounted on the substrate electrode is etched, the step of removing the damage layer formed when a surface of the substrate is sliced and the step of forming a texture on the surface of the substrate having the damage layer removed are carried out successively in the vacuum processing chamber. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理方法和处理装置，其通过干法蚀刻一次性地进行将切片期间形成的基板的损伤层除去纹理形成步骤的处理。解决方案：在真空处理室和安装在基板上的基板上设置用于制造晶体太阳能电池的用于制造晶体太阳能电池的基板的基板电极的干式蚀刻处理电极被蚀刻，在真空处理室中连续地执行去除在衬底的表面被切割时形成的损伤层的步骤和在具有损伤层的衬底的表面上形成纹理的步骤。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2014003147A Dry etching apparatus 审中-公开
标题翻译：干蚀设备
公开(公告)号：JP2014003147A
公开(公告)日：2014-01-09
申请号：JP2012137320
申请日：2012-06-18
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TAKEI HIDEO , SATO MUNEYUKI , OTAKE FUMITO , IKEDA SATOSHI , SAKAO YOSUKE
IPC分类号： H01L21/3065 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a dry etching apparatus with excellent mass-productivity, the apparatus capable of forming a texture structure on a silicon substrate.SOLUTION: A dry etching apparatus EM for forming a texture structure on a surface of a silicon substrate W comprises: a freely rotatable drum electrode 2 arranged in a vacuum processing chamber 1a; at least one substrate holder 3 which is detachably attached to a circumferential surface of the drum electrode, and holds a plurality of silicon substrates along a generatrix direction of the drum electrode; a high-frequency power supply E for supplying high-frequency power to the drum electrode; and gas introduction means 4 for introducing an etching gas into a space between the drum electrode and a wall surface defining the vacuum processing chamber.
摘要翻译：要解决的问题：为了提供一种具有优异的批量生产率的干蚀刻装置，该装置能够在硅衬底上形成纹理结构。解决方案：一种用于在硅衬底W的表面上形成纹理结构的干蚀刻装置EM 包括：布置在真空处理室1a中的可自由旋转的鼓电极2; 至少一个基板保持件3，其可拆卸地附接到滚筒电极的圆周表面，并沿着滚筒电极的母线方向保持多个硅基板; 用于向鼓电极提供高频电力的高频电源E; 以及用于将蚀刻气体引入到鼓电极和限定真空处理室的壁表面之间的空间中的气体引入装置4。

9. 发明专利

JP2013032258A Method of producing graphene 审中-公开
标题翻译：生产石墨的方法
公开(公告)号：JP2013032258A
公开(公告)日：2013-02-14
申请号：JP2011246330
申请日：2011-11-10
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TAKEI HIDEO , SAKIO SUSUMU , SATO MUNEYUKI , HIRAOKA KENSUKE
IPC分类号： C01B31/02 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide a method of rapidly producing graphene at low cost and with good mass producibility.SOLUTION: The method of producing the graphene includes: a step of storing an organic solvent S in a reaction chamber 1; a step of evaporating the organic solvent S by applying a pulse voltage to between a pair of electrodes 2 immersed in the organic solvent to cause glow discharge in air bubbles caused during the evaporation, thereby generating plasma P; a step of decomposing the organic solvent by activated species in the plasma to precipitate graphene G; and a step of collecting the graphene from the organic solvent and then drying the graphene thus collected.
摘要翻译：要解决的问题：提供以低成本快速生产石墨烯并且具有良好的批量生产能力的方法。解决方案：制备石墨烯的方法包括：将有机溶剂S储存在反应室1中的步骤; 通过向浸在有机溶剂中的一对电极2之间施加脉冲电压来蒸发有机溶剂S以在蒸发期间引起的气泡中的辉光放电从而产生等离子体P的步骤; 在等离子体中通过活化物质分解有机溶剂以沉淀石墨烯G的步骤; 以及从有机溶剂中收集石墨烯然后干燥由此收集的石墨烯的步骤。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2010263049A Dry etching apparatus 审中-公开
标题翻译：干蚀设备
公开(公告)号：JP2010263049A
公开(公告)日：2010-11-18
申请号：JP2009112264
申请日：2009-05-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： IKEDA SATOSHI , TAKEI HIDEO , SATO MUNEYUKI , SAKAO YOSUKE , MIZUNO KENJI , SUZUKI MINORU , KAWAI TOSHIHIRO , ITO TSUTOMU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a stable process by restraining discharge of those other than the process and eliminating power losses and abnormal discharges, and to provide a dry etching apparatus for improving an etching rate. SOLUTION: In the dry etching apparatus, a shower plate 15 for diffusing process gas from process gas introduction systems 17, 18, 19 is provided at a top-board-side position of a vacuum treatment chamber 11 that opposes a substrate electrode 13 attached to a substrate 12 to be etched while being provided in the vacuum treatment chamber 11, and a perforated discharge prevention plate 16 is provided at space between the top board 11a of the vacuum treatment chamber 11 and the shower plate 15. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过抑制除了工艺以外的那些放电，并且消除功率损耗和异常放电来提供稳定的工艺，并提供用于提高蚀刻速率的干式蚀刻装置。解决方案：在干蚀刻装置中，在真空处理室11的与基板电极相对的顶板侧位置处设置用于将处理气体引入系统17,18,19的处理气体扩散的喷淋板15 13，其被设置在真空处理室11中被蚀刻的基板12上，并且在真空处理室11的顶板11a和喷淋板15之间的空间设置有穿孔防止排放板16。版权所有（C）2011，JPO＆INPIT

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