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1. 发明专利

JP2001118827A PARALLEL PLATE REACTIVE ION ETCHING SYSTEM 失效
公开(公告)号：JP2001118827A
公开(公告)日：2001-04-27
申请号：JP29363299
申请日：1999-10-15
申请人： ULVAC CORP , KYOCERA CORP
发明人： OSONO MASA , IKEDA HITOSHI , KIKUCHI MASASHI , TAKEI HIDEO , INOMATA YOSUKE , FUKUI KENJI , SHIRASAWA KATSUHIKO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a parallel plate reactive ion etching system which can etch a solar battery substrate with an etching distribution of ±10% in a batch. SOLUTION: In a parallel plate reactive ion etching system, a matching box housing a matching circuit is positioned under a cathode assembly accessory mechanism attached to the external wall surface of a cathode-side vacuum chamber, within an extent containing the center axis line passing through a cathode and an anode, so that an earthing route may become symmetrical with respect to a substrate on the cathode.

2. 发明专利

JP2002184706A VACUUM PROCESSING DEVICE 失效
公开(公告)号：JP2002184706A
公开(公告)日：2002-06-28
申请号：JP2000385116
申请日：2000-12-19
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI
IPC分类号： B65G49/00 , B01J3/00 , B01J3/02 , B01J19/08 , C23C14/56 , C23C16/44 , H01L21/205 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing device having a small installation area. SOLUTION: This vacuum processing device is constituted in such a way that reciprocatively movable hands 12 and 13 are provided in a main vacuum tank 11 and a plurality of processing chambers 40, 501, and 502 is arranged along the moving loci of the handles 12 and 13 on the ceiling of the tank 11. Vertically movable hoist gears 44, 541, 542 are arranged below the chambers 40, 501, and 502 respectively, and substrates transported by means of either one or both of the hands 12 and 13 are carried in the processing chambers 40, 501, and 502 by putting the substrates on the hoist gears 44, 541, and 542 and subjected to the vacuum processing. Since the processing chambers 40, 501, and 502 are arranged on the main processing tank 11, no transportation chamber is required and the installation area of this vacuum processing device becomes smaller.

3. 发明专利

JP2001298067A VACUUM PROCESSING DEVICE 失效
公开(公告)号：JP2001298067A
公开(公告)日：2001-10-26
申请号：JP2000114621
申请日：2000-04-17
申请人： ULVAC CORP
发明人： IKEDA HITOSHI , ODAGI HIDEYUKI , KIKUCHI MASASHI
IPC分类号： B01J3/02 , C23C14/50 , C23C16/44 , H01L21/205 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing device having a small installation space and a substrate carrying mechanism of a simple configuration. SOLUTION: The vacuum processing device 1 has a plurality of treatment chambers 3, 4 for performing a prescribed vacuum processing, and the first processing chamber 3 of the treatment chambers 3, 4 has substrate carrying mechanisms 6 on both sides thereof. The substrate carrying mechanism 6 has a storage case partitioned from the first processing chamber 3 by a partitioning valve 63 and a substrate supporting arm 68 moving between the first and second treatment chambers 3, 4 is provided in the storage case 60.

4. 发明专利

JPH10324980A ELECTRODE DEVICE FOR BOTH SIDE ETCHING APPARATUS 失效
公开(公告)号：JPH10324980A
公开(公告)日：1998-12-08
申请号：JP13704597
申请日：1997-05-27
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI , MORIYA MINEHARU , IKEDA HITOSHI
IPC分类号： C23F4/00 , G11B5/84 , G11B7/26
摘要： PROBLEM TO BE SOLVED: To provide an electrode device capable of efficiently subjecting a substrate having an opening to a both side etching treatment without contaminating the substrate and an electrode device capable of holding the substrate without damaging the substrate at the time of the treatment. SOLUTION: The surfaces to be exposed to plasma exclusive of the surfaces of a pair of electrodes necessary for introducing electric power to the substrate of the apparatus for etching both surfaces of the substrate 6 having an opening 15 within the plane of a hard disk, etc., by holding the opening with a pair of the upper and lower electrodes 9, 10 are covered 20 with a material, such as alumina, having a low sputtering yield. The upper electrode of a pair of the upper and lower electrodes is sprung toward the lower electrode by a spring, by which the substrate is held with the approximately constant force.

5. 发明专利

JPH09321128A ELECTROSTATIC CHUCK DEVICE 失效
公开(公告)号：JPH09321128A
公开(公告)日：1997-12-12
申请号：JP16108296
申请日：1996-05-31
申请人： ULVAC CORP
发明人： SUNADA TAKESHI , FUJIMOTO HIDEKI , KIKUCHI MASASHI , WATANABE MIDORI
IPC分类号： H05H1/46 , B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To provide an electrostatic chuck device which enables uniform plasma processing of a substrate surface. SOLUTION: Two electrodes 21 , 22 formed in a flat shape are located substantially in the same plane. An insulating material 3 is provided on the surface of each of the electrodes 21 , 22 , and a substrate 4 is arranged on the surface of the insulating material 3. When a voltage is applied between the electrodes 21 , 22 to perform electrostatic attraction, the spacing between the two electrodes 21 , 22 is caused to be not greater than five times the thickness of the insulating material 3 on the electrodes 21 , 22 . The capacitance value between the substrate 4 and the electrodes 21 , 22 becomes substantially uniform at any point, thus enabling uniform plasma processing of the surface of the substrate 4. It is preferred that the spacing between the electrodes 21 , 22 is narrowed within such a range that static damage is not generated. However, in the case where the maximum applied voltage is determined, the magnitude of a current which flows on application of that voltage between the electrodes 21 , 22 may be caused to be not greater than the magnitude of a predetermined leakage current.

6. 发明专利

JPS6340869B2 失效
公开(公告)号：JPS6340869B2
公开(公告)日：1988-08-12
申请号：JP19479884
申请日：1984-09-19
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI
IPC分类号： C23F4/00 , C23F1/08

7. 发明专利

JPS6173891A Multi-stage type electrode assembly 失效
标题翻译：多级电极组件
公开(公告)号：JPS6173891A
公开(公告)日：1986-04-16
申请号：JP19479884
申请日：1984-09-19
申请人： Ulvac Corp
发明人： KIKUCHI MASASHI
IPC分类号： C23F4/00 , C23F1/08
摘要： PURPOSE: To increase the total number of substrates to be treated by mounting rotating electrode attached with plural pieces of the substrate to be treated to the same revolving shaft in a vacuum vessel into multiple stages and making equal the area of the stationary electrodes facing the rotating electrodes.
CONSTITUTION: The rotating electrodes 8, 9 on which the many substrates to be treated are placed are attached to the hollow revolving shaft 7 in the vacuum vessel 6 and the stationary electrodes 10, 11 are provided to face the rotating electrodes 8, 9. An auxiliary electrode 12 is provided to the central part of the electrode 8 and an insulating member 13 is provided so as to enclose the electrode 12 in the central part of the electrode 10 so that the areas of both electrodes 8, 9 and both electrodes 10, 11 are made equal to make equal the discharge impedances in the respective stages. RF electric power is thrown in this stage to the respective electrodes 8, 9 via the shaft 7 from an RF power source 19, by which the uniform etching treatment of the substrates 18 is made possible.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过将多个待处理基片的旋转电极安装在真空容器中的同一个旋转轴上，使多个基板的总数增加到多个阶段，使面对旋转的固定电极的面积相等电极。构成：其上放置有许多待处理基板的旋转电极8,9附着在真空容器6中的中空旋转轴7上，并且固定电极10,11设置成面对旋转电极8,9。辅助电极12设置在电极8的中心部分，并且设置绝缘构件13以将电极12包围在电极10的中心部分，使得电极8,9和两个电极10的面积，使得等于使各级的放电阻抗相等。在这个阶段，RF电力经由轴7从RF电源19被投入到各个电极8,9上，由此能够对基板18进行均匀的蚀刻处理。

8. 发明专利

JPS5941475A Apparatus for monitoring discharge state in discharge treatment apparatus 失效
标题翻译：放射治疗装置监测放射状态装置
公开(公告)号：JPS5941475A
公开(公告)日：1984-03-07
申请号：JP15171282
申请日：1982-09-02
申请人： Ulvac Corp
发明人： KIKUCHI MASASHI
IPC分类号： C23F4/00 , C23C14/54 , H01J37/32
CPC分类号： H01J37/32935 , C23C14/54
摘要： PURPOSE:To provide the titled apparatus for enhancing the yield of a discharge treatment apparatus and enabling the proper automation thereof, constituted so as to detect the discharge of the discharge treatment apparatus by a discharge detecting apparatus for detecting plasma potential such as a probe or the like to decide a discharge state. CONSTITUTION:In a discharge treatment apparatus such as a sputtering apparatus or an etching apparatus wherein discharge electrodes 2, 3 connected to a RF power source 5 through a matching circuit 4 and a trigger electrode 6 connected to a trigger electrode 7 for generating discharge are mounted in a vacuum chamber 1, discharge detecting apparatuses such as a single or a double probe 8, a photosensor 10 detecting plasma light through a viewing window 9, a self-bias detector 11 for detecting the DC component of discharge applying voltage or the like are provided and the detected signals are respectively inputted to a comparator 16 through amplifiers 12, 13, 14 and a change- over apparatus 15 to be compared to the reference signal from a reference signal generator 17 to decide a discharge state. In addition, on the basis of the result, the trigger power source 7 is controlled by a relay drive cicuit 18 to make it possible to automate the apparatus.
摘要翻译：目的：提供一种用于提高放电处理装置的产量的标题装置，并且能够进行适当的自动化，其构成为通过用于检测诸如探针等的等离子体电位的放电检测装置来检测放电处理装置的放电喜欢决定放电状态。构成：在诸如溅射装置或蚀刻装置的放电处理装置中，安装了通过匹配电路4连接到RF电源5的放电电极2,3和连接到用于产生放电的触发电极7的触发电极6 在真空室1中，诸如单个或双重探针8的放电检测装置，通过观察窗9检测等离子体光的光电传感器10，用于检测放电施加电压的直流分量的自偏置检测器11等并且将检测到的信号分别通过放大器12,13,14和转换装置15输入到比较器16，以与来自参考信号发生器17的参考信号进行比较以决定放电状态。此外，根据该结果，触发电源7由继电器驱动电路18控制，使得能够使装置自动化。

9. 发明专利

JP2001335941A GAS INJECTION DEVICE, AND VACUUM TREATMENT SYSTEM 失效
公开(公告)号：JP2001335941A
公开(公告)日：2001-12-07
申请号：JP2000153942
申请日：2000-05-25
申请人： ULVAC CORP
发明人： SAITO KAZUYA , SHIMIZU YASUO , HORI EISUKE , KUROKAWA KUNIAKI , MORI KATSUHIKO , KIKUCHI MASASHI , HASHIMOTO YUKINORI , ISHIKAWA MICHIO
IPC分类号： G02F1/13 , C23C16/455 , G02F1/1333
摘要： PROBLEM TO BE SOLVED: To provide a technique of improving the reproducibility of the film thickness of a deposited SiO2 film in a plasma-enhanced CVD method. SOLUTION: This film deposition system 1 has a mixing tank 30 for mixing gaseous TEOS(tetraethyl orthosilicate) with gaseous O2 and a shower plate 60 for introducing the gaseous mixture mixed in the mixing tank 30 into a vacuum chamber 2, and an end connection 61 of a gas flow passage 42 of the mixing tank 30 is directly connected to a through hole 50 of an electrode 3. Because, owing to this constitution, practically no pressure loss is brought about between the gas passage 42 of the mixing tank 30 and the through hole 50 of the shower plate 60, for inner pressure of the mixing tank 30 is not increased for pressure loss and the pressure difference between both ends of a mass-flow controller 22 for regulating the flow rate of the gaseous TEOS can be sufficiently secured and the gaseous TEOS can be allowed to flow in a state of stabilized flow rate. Accordingly, the reproducibility of the thickness of the resultant deposited SiO2 thin film can be increased as compared with that of the conventional one.

10. 发明专利

JP2001126899A ANTENNA UNIT AND PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JP2001126899A
公开(公告)日：2001-05-11
申请号：JP30335899
申请日：1999-10-26
申请人： ULVAC CORP
发明人： SAITO KAZUYA , ABE KAORU , MATSUMOTO KOICHI , IKEDA YOSHINAO , OGATA HIDEYUKI , KIKUCHI MASASHI , WATANABE KIMITACHI
IPC分类号： H01L21/205 , C23C16/505 , C23C16/511 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD(chemical vapor deposition) unit for forming a thin film on a large area substrate. SOLUTION: The invention comprises antenna lines 31-34, each of which have antenna line 61-64, shield pipes 51-54 and protection pipes 41-44. If microwaves are transmitted to the antenna line 61-64 with H2 gas in the shielded pipes 51-54, it emanates radio wave from through-holes 141-144 of he protection pipes 41-44 and makes H2 gas emanating from the same through-holes 141-144 into plasma. If raw gas is emanated from pipes 101-104 for introducing the raw gas arranged in the vicinity of it, it is decomposed by plasma and is formed into film by vapor deposition on substrates 221-224 arranged in the vicinity of it. Because the antenna lines 31-34 are arranged in equal intervals, the plasma generated from the antenna lines 31-34 overlap each other, the plasma density on the surface of substrate is uniform, and it can form a uniform film on the surface of substrate.

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