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1. 发明专利

JP2001118827A PARALLEL PLATE REACTIVE ION ETCHING SYSTEM 失效
公开(公告)号：JP2001118827A
公开(公告)日：2001-04-27
申请号：JP29363299
申请日：1999-10-15
申请人： ULVAC CORP , KYOCERA CORP
发明人： OSONO MASA , IKEDA HITOSHI , KIKUCHI MASASHI , TAKEI HIDEO , INOMATA YOSUKE , FUKUI KENJI , SHIRASAWA KATSUHIKO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a parallel plate reactive ion etching system which can etch a solar battery substrate with an etching distribution of ±10% in a batch. SOLUTION: In a parallel plate reactive ion etching system, a matching box housing a matching circuit is positioned under a cathode assembly accessory mechanism attached to the external wall surface of a cathode-side vacuum chamber, within an extent containing the center axis line passing through a cathode and an anode, so that an earthing route may become symmetrical with respect to a substrate on the cathode.

2. 发明专利

JP2001144079A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2001144079A
公开(公告)日：2001-05-25
申请号：JP2000145487
申请日：2000-05-17
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H05H1/46 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a multiple-electrode type plasma treatment device wherein a multiplicity of plasma generating spaces can be formed in a vacuum chamber. SOLUTION: In the plasma treatment device according to the present invention, an anode electrode which is connected to a ground potential and controls a discharge space is disposed in the central portion in a vacuum chamber. A plurality of high-frequency electrodes are disposed on both sides of this anode electrode as opposed to the anode electrode. The high-frequency electrodes are connected to a common high-frequency power source via their respective vacuum capacitors or LC circuits and a common matching circuit network.

3. 发明专利

JP2001144069A PLASMA ETCHING APPARATUS FOR FILM-SHAPED SUBSTRATE 失效
公开(公告)号：JP2001144069A
公开(公告)日：2001-05-25
申请号：JP2000145532
申请日：2000-05-17
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for plasma-etching film-shaped substrates capable of avoiding the problem associated with thermal expansion of the film-shaped substrates and further controlling their profile while preventing undercut. SOLUTION: This method for plasma-etching a film-shaped substrate is such that the film-shaped substrate is held on a cathode electrode by an electrostatically sucking electrode and a mechanical clamping means through a clearance between the film-shaped substrate and the mechanical clamping means, and such that a mixed gas having fluorine-containing halogen gas mixed with O2 and N2 is used as an etching gas. Further, this etching apparatus comprises an electrostatically sucking electrode and a mechanical clamping means on a cathode electrode, and uses a mixed gas having fluorine-containing halogen gas mixed with O2 and N2. The electrostatically sucking electrode electrostatically sucks and holds the film-shaped substrate, and the mechanical clamping means holds the periphery of the film-shaped substrate, which is electrically sucked and held on the electrostatically sucking electrode, through a clearance with respect to the film-shaped substrate.

4. 发明专利

JPH10317170A APPARATUS FOR ETCHING BOTH SIDES OF SUBSTRATES 失效
公开(公告)号：JPH10317170A
公开(公告)日：1998-12-02
申请号：JP12401197
申请日：1997-05-14
申请人： ULVAC CORP
发明人： IKEDA HITOSHI , MORIYA MINEHARU , KIKUCHI MASASHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for etching both sides which executes plural times of etching, is small in size, is small in an appropriate floor area and is good in production efficiency. SOLUTION: This apparatus for etching both sides of substrates has a transporting table 28 which has a substrate holder 25 holding the substrates 1 in a vacuum transporting chamber 7 and swivels horizontally, lifting rods 36 which lift the substrates held by the substrate holder and applies potential for etching to the substrates and electrodes which are formed in the upper part in the transporting section and face both sides of the substrates. Etching chambers 29 are formed at the plural points in the upper part in the transporting chamber. These etching chambers are respectively provided with the lifting rods. The apertures 39 of the respective etching chambers into the transporting chamber are provided with opening/closing plates 40 which are made of conductors, enclose the lifting rods by moving from the lateral sides of the apertures and relatively airtightly close the apertures. Such etching chambers are constituted on one of the electrodes facing each other.

5. 发明专利

JPH10310238A SUBSTRATE HOLDING DEVICE FOR VACUUM DEVICE 失效
公开(公告)号：JPH10310238A
公开(公告)日：1998-11-24
申请号：JP12401897
申请日：1997-05-14
申请人： ULVAC CORP
发明人： MORIYA MINEHARU , IKEDA HITOSHI , KIKUCHI MASASHI
IPC分类号： B65G49/00 , G11B5/84 , G11B25/04
摘要： PROBLEM TO BE SOLVED: To provide a holding device capable of securely holding in vacuum a substrate having an opening without damaging it and suited to hold in vacuum the substrates with various sizes of openings. SOLUTION: In a holding device in which a substrate 1 having an opening 2 and located in a vacuum chamber 7 is held by elastic split claws 20 which are opened apart within the opening 2 when pushed by an operating rod reciprocated by a cylinder 22 located outside the vacuum chamber, the operating rod is constructed of a first operating rod 23a direct-operated by the cylinder 22 and a second operating rod 23b activated by a spring 31 in the direction to push the elastic split claws 20 apart, with the movement of the second operating 23b being limited in that direction; the first and second operating rods 23a, 23b are connected together with an axial play therebetween. The cylinder 22 and a closure block 13 hermetically closing a substrate input/output port 8 in the vacuum chamber are mounted on a turning ramp 19 provided outside the vacuum chamber, and the elastic split claws 20 are freely removably provided on the front of the closure block 13.

6. 发明专利

JP2000036399A MAGNETIC NEUTRAL BEAM DISCHARGING PLASMA PROCESSING DEVICE FOR FORMING LARGE-SIZED MASK 失效
公开(公告)号：JP2000036399A
公开(公告)日：2000-02-02
申请号：JP20515498
申请日：1998-07-21
申请人： ULVAC CORP
发明人： IKEDA HITOSHI , CHIN TAKASHI , ITO MASAHIRO , HAYASHI TOSHIO
IPC分类号： H05H1/46 , C23C16/50 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To form fine mask patterns for a large-size wafer while controlling the lead-in condition of the plasma to be applied to a substrate electrode so as to be even in a substrate surface by changing condition of a neutral magnetic field area NLD at the time of etching the substrate. SOLUTION: A mask substrate 21 is installed on a bias substrate electrode 20 of an etching process chamber 2, and the gas of a plasma generation chamber 1 is led into the process chamber 2, and the process gas pressure is set at the predetermined value by an automatic pressure adjusting device 24. After flowing the set current to electromagnets 12, 13, 14 and applying the set voltage to the bias substrate electrode 20, the set power is applied to a high frequency coil 15 so as to lead the magnetic neutral beam discharging plasma generated in the plasma generation chamber 1 into the electrode 20, and patterning of etching film of the substrate 21 is performed. With this structure, the vertical component energy of the led NLD plasma is utilized, and the NLD condition is changed so as to evenly control the leading condition of the plasma into the bias substrate electrode side in the substrate surface, and excellent distribution and pattern are thereby obtained.

7. 发明专利

JPH10310237A SUBSTRATE LOADING/UNLOADING DEVICE FOR VACUUM DEVICE 失效
公开(公告)号：JPH10310237A
公开(公告)日：1998-11-24
申请号：JP12401597
申请日：1997-05-14
申请人： ULVAC CORP
发明人： MORIYA MINEHARU , IKEDA HITOSHI , KIKUCHI MASASHI
IPC分类号： B65G49/00 , G11B5/84 , G11B25/04
摘要： PROBLEM TO BE SOLVED: To provide a substrate loading/unloading device capable of shortening the time required to load and unload a substrate and easily dealing with changes in the dimension of the substrate. SOLUTION: In a substrate loading/unloading device, in which a substrate inlet/outlet port 8 formed in a vacuum chamber 7 is closed by inner and outer closure members 36, 37 pressed against the inner and outer surfaces of the port 8, to evacuate the inner space of the chamber 7, and in which a substrate 1 is delivered by a substrate holding device 45 provided on the outer closure member 30, the outer closure member 37 is provided with a block 38 which goes into the inner space of the member 37 to surround the substrate holding device 45. The outer closure member 37 is provided with the substrate holding device 45 which comprises elastic split claws 20 and rods 23a, 23b operating the claws 20 to open them apart, and a holding ring 39 forming a step is freely removably provided in a through hole 35b in the substrate holder 35.

8. 发明专利

JPH08203986A VACUUM PLASMA TREATMENT EQUIPMENT 失效
公开(公告)号：JPH08203986A
公开(公告)日：1996-08-09
申请号：JP2585095
申请日：1995-01-20
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/677 , H01L21/68
摘要： PURPOSE: To shorten the exchange time of substrates and improve the working efficiency of the whole device, by equipping a process chamber with a plurality of retaining pins movable in the up and down direction which independently retain the substrates mounted on each multistage constitution of the hand of a carrying arm. CONSTITUTION: A charge substrate taking-out chamber 2 accommodates many substrates 1 on several stages and is linked to a carriage chamber 4 via a gate valve 3, which chamber is linked to a process chamber 6 via a gate valve 5. A conveying arm 7 which is capable of expansion, contraction, and rotation is installed in the carriage chamber 4. A hand 8 is constituted as two stages 8a, 8b which can mount the substrates 1 keeping an interval in the vertical direction. A pair of counter electrodes 9a, 9b are arranged in the process chamber 6. A plurality of retaining pins 10, 11 capable of moving in the up and down direction are installed in the process chamber 6, and can retain independently the substrates mounted on the respective stages 8a, 8b of the hand 8 of the arm 7.

9. 发明专利

JP2001298067A VACUUM PROCESSING DEVICE 失效
公开(公告)号：JP2001298067A
公开(公告)日：2001-10-26
申请号：JP2000114621
申请日：2000-04-17
申请人： ULVAC CORP
发明人： IKEDA HITOSHI , ODAGI HIDEYUKI , KIKUCHI MASASHI
IPC分类号： B01J3/02 , C23C14/50 , C23C16/44 , H01L21/205 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing device having a small installation space and a substrate carrying mechanism of a simple configuration. SOLUTION: The vacuum processing device 1 has a plurality of treatment chambers 3, 4 for performing a prescribed vacuum processing, and the first processing chamber 3 of the treatment chambers 3, 4 has substrate carrying mechanisms 6 on both sides thereof. The substrate carrying mechanism 6 has a storage case partitioned from the first processing chamber 3 by a partitioning valve 63 and a substrate supporting arm 68 moving between the first and second treatment chambers 3, 4 is provided in the storage case 60.

10. 发明专利

JPH10324980A ELECTRODE DEVICE FOR BOTH SIDE ETCHING APPARATUS 失效
公开(公告)号：JPH10324980A
公开(公告)日：1998-12-08
申请号：JP13704597
申请日：1997-05-27
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI , MORIYA MINEHARU , IKEDA HITOSHI
IPC分类号： C23F4/00 , G11B5/84 , G11B7/26
摘要： PROBLEM TO BE SOLVED: To provide an electrode device capable of efficiently subjecting a substrate having an opening to a both side etching treatment without contaminating the substrate and an electrode device capable of holding the substrate without damaging the substrate at the time of the treatment. SOLUTION: The surfaces to be exposed to plasma exclusive of the surfaces of a pair of electrodes necessary for introducing electric power to the substrate of the apparatus for etching both surfaces of the substrate 6 having an opening 15 within the plane of a hard disk, etc., by holding the opening with a pair of the upper and lower electrodes 9, 10 are covered 20 with a material, such as alumina, having a low sputtering yield. The upper electrode of a pair of the upper and lower electrodes is sprung toward the lower electrode by a spring, by which the substrate is held with the approximately constant force.

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