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1. 发明专利

JPH0669163A ETCHING DEVICE 失效
公开(公告)号：JPH0669163A
公开(公告)日：1994-03-11
申请号：JP14259191
申请日：1991-05-19
申请人： ULVAC CORP
发明人： MAKI MASATO , SUNADA TAKESHI , FUJIMOTO HIDEKI , ITO MASAHIRO , HAYASHI TOSHIO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide an etching device which achieves a high-speed etching uniformly without reducing anisotropy of an etching shape. CONSTITUTION:In an etching device in that a flat-plate shaped cathode electrode 2 where a high-frequency power is applied and a flat-plate shaped substrate electrode 3 are laid out opposingly in parallel in a vacuum vessel 1 and at the same time an anode electrode 4 is laid out around a space between these electrodes for etching a substrate 8 placed at the substrate electrode 3, a magnet 7 generating a magnetic field which is nearly vertical to the flat-plate shaped substrate electrode 3 is provided outside or inside the vacuum vessel 1.

2. 发明专利

JPH06244270A ELECTROSTATIC ATTRACTION APPARATUS 失效
公开(公告)号：JPH06244270A
公开(公告)日：1994-09-02
申请号：JP3040393
申请日：1993-02-19
申请人： ULVAC CORP
发明人： SUNADA TAKESHI , HAYASHI TOSHIO
IPC分类号： B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PURPOSE:To provide an electrostatic attracting apparatus wherein an enough electrostatic attracting force can be secured when it attracts a work, and not only a residual electric charge is effectively eliminated when the apparatus repels a work but also a predetermined short-time holding force can be retained. CONSTITUTION:An RLC discharge circuit is formed of a series circuit composed of a resistor 6 and a coil 7 together with the intrinsic electrostatic capacity of an electrostatic chuck 1 itself, and the RLC discharge circuit enables a voltage between electrodes to damp oscillating between a positive and a negative potential on the basis of a potential of 0V.

3. 发明专利

JPH09321128A ELECTROSTATIC CHUCK DEVICE 失效
公开(公告)号：JPH09321128A
公开(公告)日：1997-12-12
申请号：JP16108296
申请日：1996-05-31
申请人： ULVAC CORP
发明人： SUNADA TAKESHI , FUJIMOTO HIDEKI , KIKUCHI MASASHI , WATANABE MIDORI
IPC分类号： H05H1/46 , B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To provide an electrostatic chuck device which enables uniform plasma processing of a substrate surface. SOLUTION: Two electrodes 21 , 22 formed in a flat shape are located substantially in the same plane. An insulating material 3 is provided on the surface of each of the electrodes 21 , 22 , and a substrate 4 is arranged on the surface of the insulating material 3. When a voltage is applied between the electrodes 21 , 22 to perform electrostatic attraction, the spacing between the two electrodes 21 , 22 is caused to be not greater than five times the thickness of the insulating material 3 on the electrodes 21 , 22 . The capacitance value between the substrate 4 and the electrodes 21 , 22 becomes substantially uniform at any point, thus enabling uniform plasma processing of the surface of the substrate 4. It is preferred that the spacing between the electrodes 21 , 22 is narrowed within such a range that static damage is not generated. However, in the case where the maximum applied voltage is determined, the magnitude of a current which flows on application of that voltage between the electrodes 21 , 22 may be caused to be not greater than the magnitude of a predetermined leakage current.

4. 发明专利

JPH0922794A DISCHARGE MECHANISM OF PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH0922794A
公开(公告)日：1997-01-21
申请号：JP16997995
申请日：1995-07-05
申请人： ULVAC CORP
发明人： FUJIMOTO HIDEKI , SUNADA TAKESHI , NAKAMURA TATSUYA , TAKADA TOSHINARI
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a discharge mechanism of a plasma processing device in which a discharge tube has long life. SOLUTION: A plasma ashing device 1A, one of plasma processing devices, includes a vacuum process chamber 10, a waveguide 30 which transmits microwaves, and a discharge tube 20 passed through the waveguide 30, connected to a plasma-generating gas supply opening end 22 at one end and inserted into the vacuum process chamber 10 at the other end. A water-cooled block 23A and a cooling gas inlet passage 24A, which are placed around the discharge tube 20 to prevent burning of vacuum seals 21a, 21b, have roundness R formed at their edges opposite to the discharge tube 20. By forming the roundness at the edges, electric field concentration on the edges is unlikely to occur, and abnormal edging by localized discharges does not occur, with the result that the life of the discharge tube is extended.

5. 发明专利

JPH07240298A DISCHARGE STARTING MECHANISM OF PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH07240298A
公开(公告)日：1995-09-12
申请号：JP5273394
申请日：1994-02-24
申请人： ULVAC CORP
发明人： SUNADA TAKESHI , FUJIMOTO HIDEKI , TAKADA TOSHINARI
IPC分类号： H05H1/46 , C23F1/08
摘要： PURPOSE:To start the discharge of a microwave simply and securely by installing the output terminal of a high voltage generating device to the outer wall near the discharge member of a discharge tube, and applying an AC high voltage to the outer wall of the discharge tube immediately after the microwave is applied. CONSTITUTION:A wafer substrate 17 is loaded on a holding board 16 in a vacuum processing chamber 10, and after heating to a specific temperature, the chamber 10 and a discharge tube 20 are vacuum evacuated by a vacuum pump 13. At the same time, the oxygen gas is fed from a gas feeding end 25 into the tube 20. Then, a microwave with the frequency 2.45 GHz is applied from a microwave current source 31, and immediately after that, a voltage with + or -6KV in the earthing standard is applied to the outer wall of the tube 20 through the output terminal of an AC voltage trigger. A plasma of oxygen gas is produced by the discharge in the tube 20, and a gas including high activity of neutral oxygen radicals is led in to the chamber 10. The oxygen gas is reacted with a resist membrane on the substrate 17, and the membrane can be ashing removed.

6. 发明专利

JPH07169592A DISCHARGE TUBE COOLING MECHANISM FOR PLASMA PROCESSING DEVICE 失效
公开(公告)号：JPH07169592A
公开(公告)日：1995-07-04
申请号：JP34251793
申请日：1993-12-13
申请人： ULVAC CORP
发明人： SUNADA TAKESHI , FUJIMOTO HIDEKI , TAKADA TOSHINARI , NAKAMURA TATSUYA
IPC分类号： H05H1/46 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable long hour and stable operation of a plasma processing device by arranging a cooling mechanism, restraining a temperature rise in a discharge tube, and maintaining high sealing performance of a vacuum sealing member. CONSTITUTION:In a cooling mechanism 5, as a heat conductive sheet 60, a sheet obtained by impregnating boron nitride into an alumina mesh is wound a semicircle by a semicircle round the outer periphery of a discharge tube 20 from above and below, and aluminum blocks 51 and 52 are fixed to these surfaces by interposingly pressing the surfaces between them from above and below by a clamp. This sheet is deformed by flexibility so as not to leave the void between both when being pressed between the tube 20 and the blocks 51 and 51, and thermally brings both into close contact with each other. Through holes 54 and 56 are arranged inside of the blocks 51 and 52, and tubular screw members 59 to connect tubes 53, 55 and 57 to each other are fixed to the respective opening ends, and box nuts 58 of tube terminals are screw-fitted to these, and a cooling water passage to communicate the blocks 51 and 52 with each other is formed, and the blocks 51 and 52 are cooled.

7. 发明专利

JPH0598471A ETCHING DEVICE 失效
公开(公告)号：JPH0598471A
公开(公告)日：1993-04-20
申请号：JP28556391
申请日：1991-10-05
申请人： ULVAC CORP
发明人： TANABE MASABUMI , MATSUDA AKIO , SUNADA TAKESHI , MAKI MASATO , FUJIMOTO HIDEKI , HAYASHI TOSHIO
IPC分类号： B01J19/08 , C23F4/00
摘要： PURPOSE:To uniformize the etching rate distribution and to prevent a substrate to be etched from an adverse electrical influence. CONSTITUTION:A flat anode 2 is opposed to a flat cathode 3 in parallel in a vacuum vessel 1, a substrate 4 is placed on the cathode, and a plate permanent magnet 6 is freely rotatably set on the rear of the anode to constitute an etching device. In this case, the center of rotation of the magnet is shifted from the center of the magnet, and the magnet is eccentrically rotated. Consequently, a magnetic field having a magnetic field component vertical to the substrate is generated at regular time intervals over the whole surface of the substrate, electrons are densely trapped in a sheath, and the charges are not significantly unbalanced. Besides, the anode is allowed to make an acute angle with the magnet, and a magnetic field having a magnetic field component vertical to the substrate is generated close to the center of the substrate.

8. 发明专利

JPH0964014A METHOD AND DEVICE FOR SPUTTER ETCHING 失效
公开(公告)号：JPH0964014A
公开(公告)日：1997-03-07
申请号：JP21782395
申请日：1995-08-25
申请人： ULVAC CORP
发明人： ITO MASAHIRO , CHIN TAKASHI , HAYASHI TOSHIO , FUJIMOTO HIDEKI , SUNADA TAKESHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and a device with which other works can be sputter-etched even after a work having a conductive material is sputter-etched, without detracting the merit of etching with high frequency inductive coupling method. SOLUTION: Relating to a method wherein the etching gas introduced into a vacuum process chamber 1 is ionized with the use of a high frequency coil 10 in an inductive coupling method to sputter-etch a work 5 having a conductive material placed on an etching electrode 6 biased with a high frequency power source 7, reactive gas, which reacts with the sputter target conductive material to form a dielectric material from the work, is added to the etching gas. To a connection circuit to an etching gas source, a gas source 13 of the reactive gas which reacts with the sputter target conductive material to form a dielectric material from the work, is connected with a switch control system 16 provided with a gas flow rate adjustment device 14 in between.

9. 发明专利

JPH0955368A ETCHING APPARATUS 失效
公开(公告)号：JPH0955368A
公开(公告)日：1997-02-25
申请号：JP20722295
申请日：1995-08-14
申请人： ULVAC CORP
发明人： ITO MASAHIRO , CHIN TAKASHI , HAYASHI TOSHIO , FUJIMOTO HIDEKI , MATSUDA AKIO , SUNADA TAKESHI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To obtain an etching apparatus by which an etching operation is performed at high speed by a method wherein an alumina cylindrical body which prevents the reaction of ions and radicals as high-density reactive substances generated in a plasma is installed at the inside of the wall of a vacuum chamber constituted of cylindrical quartz. SOLUTION: A vacuum chamber 1 is provided with a quartz cylindrical sidewall 2, and three coils 3, 4, 5 are installed at its outside along the axial line on the same circumference. Consequently, a position which is continued at the inside of the sidewall 2 in the same height as the intermediate coil 3 and in which a magnetic field is zero is formed, and a circular ring-shaped magnetic neutral line 6 is formed. In addition, an antenna for generation of a high-frequency electric field is installed between the intermediate coil 4 and the sidewall 2. In addition, a substrate electrode 9 is installed inside the vacuum chamber 1 via an insulator 8, and it is connected to a high-frequency power supply 10. Then, an alumina cylindrical body 13 is installed at the inside of the sidewall 2 of the vacuum chamber 1. The cylindrical body 13 prevents the reaction of ions and radicals, and an etchant can be transported effectively to a substrate 12.

10. 发明专利

JPH06316779A ETCHING DEVICE 失效
公开(公告)号：JPH06316779A
公开(公告)日：1994-11-15
申请号：JP14259291
申请日：1991-05-19
申请人： ULVAC CORP
发明人： MAKI MASATO , SUNADA TAKESHI , FUJIMOTO HIDEKI , HAYASHI TOSHIO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform high speed and uniform etching in a conventional etching device by providing magnets generating the magnetic field almost perpendicular to a flat cathode. CONSTITUTION:A flat anode 2 grounded and a flat cathode 3 connected to a high frequency power source 4 are provided in parallel and opposite to each other in a vacuum tank 1. Cusp type magnets are arranged behind the anode 2 to form the cusp type magnetic field on the surface of the anode 2 and a substrate 6 is mounted on the cathode 3. In the catching device, electromagnetic coils 7 are provided outside (or inside) the vacuum tank 1 to generate the magnetic field almost perpendicular to the anode 2 and the cathode 3. By changing the current flowing in the electromagnetic coils 7, the magnetic field by the electromagnetic coils 7 is controlled. In such a way, ions in plasma are uniformly made incident on the surface of the substrate 6 to allow the uniform etching at a high speed without lowering the anisotropy of etching forms.

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