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1. 发明专利

JP2009218236A Diode 有权
标题翻译：二极管
公开(公告)号：JP2009218236A
公开(公告)日：2009-09-24
申请号：JP2008057024
申请日：2008-03-06
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： WATANABE YUKIHIKO , KATSUNO TAKASHI , ISHIKO MASAYASU , FUJIWARA HIROKAZU , KONISHI MASAKI , YAMAMOTO TAKEO , ENDO TAKESHI
IPC分类号： H01L29/47 , H01L29/872
CPC分类号： H01L29/872 , H01L27/0814 , H01L29/0649 , H01L29/417 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide technique for reducing forward resistance by making good use of a pn junction diode, with respect to a diode having a p-type semiconductor region formed on part of a surface of an n-type semiconductor region. SOLUTION: The diode has the n-type semiconductor region 22, the p-type semiconductor region 14 provided on part of the surface of the n-type semiconductor region 22, an anode electrode 2 (surface electrode) which is in contact with the surface of the n-type semiconductor region 22 and a surface of the p-type semiconductor region 14 and makes a Schottky junction Jb to at least the surface of the n-type semiconductor region 22, and an insulation region 30 having a right side surface 30b (first side surface) and a left side surface 30a (second side surface) being in contact with the n-type semiconductor region 22. The right side surface 30b faces a second n-type semiconductor region 22b disposed below the Schottky junction Jb, and the left side surface 30a faces a first n-type semiconductor region 22a disposed below the pn junction 13 between the n-type semiconductor region 22 and p-type semiconductor region 14. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供通过充分利用pn结二极管来减小正向电阻的技术，对于在n型半导体区域的一部分表面上形成有p型半导体区域的二极管。解决方案：二极管具有n型半导体区域22，设置在n型半导体区域22的一部分表面上的p型半导体区域14，接触的阳极电极2（表面电极）与n型半导体区域22的表面和p型半导体区域14的表面并且使肖特基结Jb至少到n型半导体区域22的表面，以及具有右侧的绝缘区域30 侧表面30b（第一侧表面）和与n型半导体区域22接触的左侧表面30a（第二侧表面）。右侧表面30b面对设置在肖特基结下方的第二n型半导体区域22b Jb，并且左侧表面30a面对设置在n型半导体区域22和p型半导体区域14之间的pn结13的下方的第一n型半导体区域22a。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008227237A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008227237A
公开(公告)日：2008-09-25
申请号：JP2007064867
申请日：2007-03-14
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUZUKI TAKASHI , ISHIKO MASAYASU , SAITO JUN , NISHIWAKI TAKESHI , SAITO HIROKAZU , ONISHI TOYOKAZU
IPC分类号： H01L29/739 , H01L29/06 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7397
摘要： PROBLEM TO BE SOLVED: To improve dynamic characteristics of a semiconductor device. SOLUTION: The semiconductor device 10 is divided into a center region 10A where an IGBT is incorporated, and a terminal region 10B formed around the center region 10A. The semiconductor device 10 comprises: an n - -type drift region 26 that is continuous from the center region 10A to the terminal region 10B; a p-type body region 52 formed on the drift region 26 of the center region 10A; a p-type resurf layer 42 formed on the drift region 26 of the terminal region 10B; and an n-type semiconductor region 44 formed in the resurf layer 42. The semiconductor region 44 contains impurities higher in intensity than that of the drift region 26. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了改善半导体器件的动态特性。解决方案：将半导体器件10分为形成IGBT的中心区域10A和围绕中心区域10A形成的端子区域10B。半导体器件10包括：从中心区域10A连接到端子区域10B的n - SP型漂移区域26; 形成在中心区域10A的漂移区域26上的p型体区域52; 形成在端子区域10B的漂移区域26上的p型再现层42; 以及形成在再生层42中的n型半导体区域44.半导体区域44含有比漂移区域26的强度更高的杂质。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008147362A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008147362A
公开(公告)日：2008-06-26
申请号：JP2006331994
申请日：2006-12-08
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUZUKI TAKASHI , ISHIKO MASAYASU , NAKAGAWA MIHIRO , SAITO JUN , NISHIWAKI TAKESHI
IPC分类号： H01L29/06 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To improve dynamic characteristics of a semiconductor device. SOLUTION: The semiconductor device 10 is provided with an anode region 27 formed on the surface portion of a semiconductor substrate 20 of a center region, a resurf layer 25 formed on at least a part of the surface portion of the semiconductor substrate 20 of a termination region, and a surface local semiconductor region 26 formed on at least a part of the surface portion of the semiconductor substrate 20 in the resurf layer 25. The resurf layer 25 is formed to be deeper than the anode region 27. The surface local semiconductor region 26 is formed so as to have an impurity concentration larger than the impurity concentration of the resurf layer 25. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了改善半导体器件的动态特性。解决方案：半导体器件10设置有形成在中心区域的半导体衬底20的表面部分上的阳极区域27，形成在半导体衬底20的表面部分的至少一部分上的再生层25 以及形成在再生层25中的半导体衬底20的表面部分的至少一部分上的表面局部半导体区域26.再生层25形成为比阳极区域27更深。表面局部半导体区域26形成在半导体衬底20的表面部分的至少一部分上。局部半导体区域26形成为具有大于复层层25的杂质浓度的杂质浓度。（C）2008，JPO＆INPIT

4. 发明专利

JP2010135594A Diode 审中-公开
标题翻译：二极管
公开(公告)号：JP2010135594A
公开(公告)日：2010-06-17
申请号：JP2008310728
申请日：2008-12-05
申请人： Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： SUZUKI TAKASHI , ISHIKO MASAYASU
IPC分类号： H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a diode which can suppress a surge voltage while reducing power loss during reverse recovery, and is excellent in reverse recovery characteristics. SOLUTION: The diode has an intermediate region 30 provided between a cathode electrode 10 and an anode electrode 60 and including a high-resistance region 34 and an insulator region 32 adjacent to the high-resistance region 34. The intermediate region 30 has a first cross section in which the high-resistance region 34 has a high occupation area ratio and a second cross section A2 in which the high-resistance region 34 has a low occupation area ratio, with respect to a cross section orthogonal to a direction connecting the cathode electrode 10 and anode electrode 60. The first cross section A1 is disposed closer to the cathode electrode 10 than the second cross section A2. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制浪涌电压同时降低反向恢复期间的功率损耗的二极管，并且具有优异的反向恢复特性。解决方案：二极管具有设置在阴极电极10和阳极电极60之间并且包括高电阻区域34和与高电阻区域34相邻的绝缘体区域32的中间区域30.中间区域30具有相对于与连接方向正交的横截面，高电阻区域34具有高占用面积比的第一横截面和高电阻区域34具有低占空比的第二横截面A2 阴极10和阳极电极60.第一横截面A1比第二横截面A2更靠近阴极10设置。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010062253A Semiconductor device, method of manufacturing the same, power element, and stress relaxing material 审中-公开
标题翻译：半导体器件，其制造方法，功率元件和应力释放材料
公开(公告)号：JP2010062253A
公开(公告)日：2010-03-18
申请号：JP2008224815
申请日：2008-09-02
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YANAGIUCHI AKIHIRO , HOTTA KOJI , SUZUKI TOMOKIYO , SAITO JUN , USUI MASANORI , ISHIKO MASAYASU
IPC分类号： H01L23/12
CPC分类号： H01L2224/48091 , H01L2224/4846 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that relaxes the stress generated at a solder joint between a power element and an insulating substrate and a brazing part between the insulating substrate and a stress relaxing material without practically deteriorating the heat dissipation from the power element, and to provide a method of manufacturing the same, the power element, and the stress relaxing material. SOLUTION: First, a cooler 40, a stress relaxing material 30, and an insulating substrate 20 are brazed. Then, on an electrode 22 in the upside of the figure of the insulating substrate 20, solder foil 90 and a power element 10 are heated in a solder melting furnace in such a state that the power element 10 is mounted to be the top. The power element 10 has a protrusion 11 formed on the backside. Thus, the power element 10 is lowered such that the protrusion 11 pushes away the solder in the melted state. Thereby, the protrusion 11 of the power element 10 divides the solder 90 in the melted state. Then, the solder is solidified in such a state that the solder 90 is divided. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其放宽在功率元件和绝缘基板之间的焊接接头处产生的应力和绝缘基板与应力松弛材料之间的钎焊部分，而不会使散热从功率元件，并且提供其制造方法，功率元件和应力松弛材料。解决方案：首先，将冷却器40，应力松弛材料30和绝缘基板20钎焊。然后，在绝缘基板20的图的上侧的电极22上，在功率元件10安装为顶部的状态下，在焊料熔化炉中加热焊锡箔90和功率元件10。功率元件10具有形成在背面的突起11。因此，功率元件10下降，使得突起11在熔化状态下推开焊料。由此，功率元件10的突起11将焊料90分割成熔融状态。然后，焊料在焊料90被分割的状态下固化。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009283861A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009283861A
公开(公告)日：2009-12-03
申请号：JP2008137014
申请日：2008-05-26
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , ISHIKO MASAYASU , SUZUKI TOMOKIYO , HOTTA KOJI , SAITO JUN , YANAGIUCHI AKIHIRO
IPC分类号： H01L23/42 , H02M7/48
CPC分类号： H01L2224/48491 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of lowering the cooling ability in a semiconductor device with the output power amount varying to time, which needs to determine the specification of a cooler taking into consideration of the case of generating the maximum heat by operation with the maximum output. SOLUTION: A melting substance 8 is sealed in the semiconductor device 20. The melting substance selected is one capable of obtaining the following phenomenon. The melting substance is solid at the time of maintaining a first output power amount set in a small output range in a rated fluctuation range and it is molten at the time of maintaining a second output power amount set in a large output range in the rated fluctuation range. The melting point of the melting substance is set at or lower than the maximum temperature allowing normal operation of the semiconductor device. The melting substance 8 is disposed on the opposite side of an exothermic part (semiconductor chip 14) with respect to a substrate 18. The melting substance 8 prevents a solder layer 16 of the semiconductor device 20 from overheating to the melting point of the melting substance or higher than that. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以随时间变化的输出功率量降低半导体器件的冷却能力的技术，需要考虑到产生最大值的情况来确定冷却器的规格热量通过最大输出运行。解决方案：熔融物质8被密封在半导体器件20中。所选择的熔化物质是能够获得以下现象的物质。在保持在额定变动范围内设定在小输出范围内的第一输出功率量时熔融物质是固体，并且在维持设定在大额定波动的大输出范围内的第二输出功率量时熔化物质范围。熔化物质的熔点设定为或低于允许半导体器件正常工作的最高温度。熔化物质8相对于基板18设置在放热部（半导体芯片14）的相对侧。熔化物质8防止半导体器件20的焊料层16过热到熔化物质的熔点或更高。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009252977A Module formed by bonding low thermal expansion coefficient material and high thermal expansion coefficient material 审中-公开
标题翻译：通过结合低热膨胀系数材料和高热膨胀系数材料形成的模块
公开(公告)号：JP2009252977A
公开(公告)日：2009-10-29
申请号：JP2008098631
申请日：2008-04-04
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , ISHIKO MASAYASU , SAITO JUN , SUZUKI TOMOKIYO , HOTTA KOJI , YANAGIUCHI AKIHIRO
IPC分类号： H01L23/12
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To solve the problem that when a component containing a low thermal expansion coefficient material as a main material is bonded to a component containing a high thermal expansion coefficient material as a main material to form a module, a large thermal stress is applied to a bonding material such as solder by the difference in thermal expansion between both the materials when exposed to heat cycle and a junction portion is easily damaged. SOLUTION: A thermal expansion coefficient gradually increasing layer 10d containing a high thermal expansion coefficient material 10b that increases the content toward a junction surface 10c is formed on the junction surface 10c of a component 10 containing a low thermal expansion coefficient material as a main material. Alternatively, a thermal expansion coefficient gradually decreasing layer containing a low thermal coefficient material that increases the content toward a junction surface is formed on the junction surface of a component containing a high thermal expansion coefficient material as a main material. When the layer having a thermal expansion coefficient gradually increasing the content toward the junction surface 10c is formed on the junction surface 10c side of the component 10 containing the low thermal expansion coefficient material as a main material, junction is not necessarily executed on junction surfaces having largely different thermal expansion coefficients. Thus, damage can be prevented on the junction surface even if subjected to exposure in a severe heat cycle. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决以含有低热膨胀系数材料为主要成分的成分与包含高热膨胀系数材料作为主要材料的成分结合形成模块的问题，当暴露于热循环时，由于两种材料之间的热膨胀差导致热应力作用于诸如焊料的接合材料，并且接合部分容易损坏。解决方案：在包含低热膨胀系数材料的部件10的接合表面10c上形成包含增加朝向接合面10c的含量的高热膨胀系数材料10b的层10d的逐渐增加的热膨胀系数，作为主要材料。或者，在包含高热膨胀系数材料作为主要材料的部件的接合表面上形成包含增加向接合面的含量的低热系数材料的热膨胀系数逐渐降低的层。当在包含低热膨胀系数材料作为主要材料的部件10的接合表面10c侧上形成热膨胀系数向结合面10c逐渐增加的层时，不必在具有在很大程度上不同的热膨胀系数。因此，即使在严重的热循环中经受曝光，也可以防止接合面上的损伤。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2008130843A Semiconductor device, and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2008130843A
公开(公告)日：2008-06-05
申请号：JP2006314660
申请日：2006-11-21
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： ISHIKO MASAYASU , KAWAJI SACHIKO , SAITO JUN
IPC分类号： H01L21/336 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that cannot be damaged easily, and to provide a manufacturing method of the semiconductor device.
SOLUTION: The semiconductor device 10 comprises: a first semiconductor region 14; a second semiconductor region 16; a third semiconductor region 32; a fourth semiconductor region 34; a trench gate 36; and an internal insulator region 30. The internal insulator region 30 is arranged between a first low-concentration region 20 and a second low-concentration region 22 in the second semiconductor region 16. The entire internal insulator region 30 is arranged at a position deeper than a bottom surface 37 of the trench gate 36.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供不容易损坏的半导体器件，并提供半导体器件的制造方法。解决方案：半导体器件10包括：第一半导体区域14; 第二半导体区域16; 第三半导体区域32; 第四半导体区域34; 沟槽门36; 和内部绝缘体区域30.内部绝缘体区域30布置在第二半导体区域16中的第一低浓度区域20和第二低浓度区域22之间。整个内部绝缘体区域30布置在比沟槽栅36的底面37。（C）2008，JPO＆INPIT

9. 发明专利

JP2011023739A Diode 审中-公开
标题翻译：二极管
公开(公告)号：JP2011023739A
公开(公告)日：2011-02-03
申请号：JP2010215336
申请日：2010-09-27
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： WATANABE YUKIHIKO , KATSUNO TAKASHI , ISHIKO MASAYASU , FUJIWARA HIROKAZU , KONISHI MASAKI , YAMAMOTO TAKEO , ENDO TAKESHI
IPC分类号： H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a technique for reducing forward resistance by utilizing an included pn junction diode, with respect to a diode having a p-type semiconductor region formed on a portion of a surface of an n-type semiconductor region. SOLUTION: The diode includes: the n-type semiconductor region 22; the p-type semiconductor region 14 formed on a portion of the surface of the n-type semiconductor region 22; an anode electrode 2 (surface electrode) which is in contact with the surface of the n-type semiconductor region 22 and the surface of the p-type semiconductor region 14 and makes a Schottky junction Jb to the surface of at least the n-type semiconductor region 22, and an insulation region 30 having a right side surface 30b (first side surface) and a left side surface 30a (second side surface) being in contact with the n-type semiconductor region 22. The right side surface 30b faces a second n-type semiconductor region 22b disposed below the Schottky junction Jb, and the left side surface 30a faces a first n-type semiconductor region 22a disposed below the pn junction 13 between the n-type semiconductor region 22 and the p-type semiconductor region 14. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过利用所包含的pn结二极管来减小正向电阻的技术，相对于在n型半导体区域的表面的一部分上形成有p型半导体区域的二极管。解决方案：二极管包括：n型半导体区域22; 形成在n型半导体区域22的表面的一部分上的p型半导体区域14; 与n型半导体区域22的表面和p型半导体区域14的表面接触并使肖特基结Jb至少为n型的表面的阳极电极2（表面电极）半导体区域22和具有右侧表面30b（第一侧表面）和左侧表面30a（第二侧表面）的绝缘区域30与n型半导体区域22接触。右侧表面30b面向设置在肖特基结Jb下方的第二n型半导体区域22b，并且左侧面30a面对设置在n型半导体区域22和p型半导体区域之间的pn结13的下方的第一n型半导体区域22a 14.版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009224609A Module, and method of manufacturing the same 审中-公开
标题翻译：模块及其制造方法
公开(公告)号：JP2009224609A
公开(公告)日：2009-10-01
申请号：JP2008068391
申请日：2008-03-17
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , YAMADA YASUSHI , ISHIKO MASAYASU , YANAGIUCHI AKIHIRO , SUZUKI TOMOKIYO , HOTTA KOJI , SAITO JUN
IPC分类号： H01L21/52 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To provide a structure which is improved in reliability when a pair of metal layers differing in coefficient of thermal expansion are connected to each other with a state of a high coefficient of thermal conductivity. SOLUTION: At least surfaces of the respective metal layers are made of Cu. They are connected to each other with a plurality of columnar substances 18. Each of the columnar substances 18 extends in a columnar shape from one metal layer to the other metal layer and the plurality of columnar substances 18 are distributed within a formation range of the metal layers. At least end surfaces of the respective columnar substances 18 are made of Cu. When a layer of Sn is interposed between metal layer Cu and Cu of the columnar substances 18 and heated, Cu and Sn are alloyed, so that the metal layers and the end surfaces of the respective columnar substances 18 are connected with the SnCu alloy present between them. Even when the columnar substances 18 are arranged to high density to increase the heat conductivity, the durability of the connection portion is high. The connection strength by the SnCu is higher than that by solder. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在热膨胀系数不同的一对金属层以高导热系数的状态彼此连接时提高可靠性的结构。解决方案：各个金属层的至少表面由Cu制成。它们通过多个柱状物质18彼此连接。每个柱状物质18从一个金属层延伸到另一个金属层的柱状，并且多个柱状物质18分布在金属的形成范围内层。各柱状物质18的至少端面由Cu构成。当Sn层被插入在柱状物质18的金属层Cu和Cu之间并加热时，Cu和Sn合金化，使得各个柱状物质18的金属层和端面与SnCu合金之间存在他们。即使柱状物质18被布置成高密度以增加导热性，连接部分的耐久性也高。 SnCu的连接强度高于焊料的连接强度。版权所有（C）2010，JPO＆INPIT

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