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1. 发明专利

JP2008227236A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008227236A
公开(公告)日：2008-09-25
申请号：JP2007064866
申请日：2007-03-14
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUZUKI TAKASHI , ISHIKO MASAYASU , SAITO JUN , NISHIWAKI TAKESHI , SAITO HIROKAZU , ONISHI TOYOKAZU
IPC分类号： H01L29/06 , H01L21/28 , H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which an influence of an external charge is reduced. SOLUTION: The semiconductor device 10 has a center region 10A having an incorporated n-type MOSFET, and a terminal region 10B formed around the center region 10A. The terminal region 10B comprises: an n - -type drift region 26 continuous from the center region 10A to the terminal region 10B; a p-type guard ring 42; an n + -type channel stopper region 32 formed at the periphery of the terminal region 10B; and an n-type first surface semiconductor region 44 formed at least at one portion between the adjacent guard rings 42. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供其中减少外部电荷的影响的半导体器件。解决方案：半导体器件10具有包含n型MOSFET的中心区域10A和围绕中心区域10A形成的端子区域10B。端子区域10B包括：从中心区域10A连接到端子区域10B的n - SP>型漂移区域26; p型保护环42; 形成在端子区域10B的周围的n 型通道停止区域32; 以及形成在相邻护环42之间的至少一部分上的n型第一表面半导体区域44.权利要求：（C）2008，JPO＆INPIT

2. 发明专利

JP2008227237A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008227237A
公开(公告)日：2008-09-25
申请号：JP2007064867
申请日：2007-03-14
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUZUKI TAKASHI , ISHIKO MASAYASU , SAITO JUN , NISHIWAKI TAKESHI , SAITO HIROKAZU , ONISHI TOYOKAZU
IPC分类号： H01L29/739 , H01L29/06 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7397
摘要： PROBLEM TO BE SOLVED: To improve dynamic characteristics of a semiconductor device. SOLUTION: The semiconductor device 10 is divided into a center region 10A where an IGBT is incorporated, and a terminal region 10B formed around the center region 10A. The semiconductor device 10 comprises: an n - -type drift region 26 that is continuous from the center region 10A to the terminal region 10B; a p-type body region 52 formed on the drift region 26 of the center region 10A; a p-type resurf layer 42 formed on the drift region 26 of the terminal region 10B; and an n-type semiconductor region 44 formed in the resurf layer 42. The semiconductor region 44 contains impurities higher in intensity than that of the drift region 26. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了改善半导体器件的动态特性。解决方案：将半导体器件10分为形成IGBT的中心区域10A和围绕中心区域10A形成的端子区域10B。半导体器件10包括：从中心区域10A连接到端子区域10B的n - SP型漂移区域26; 形成在中心区域10A的漂移区域26上的p型体区域52; 形成在端子区域10B的漂移区域26上的p型再现层42; 以及形成在再生层42中的n型半导体区域44.半导体区域44含有比漂移区域26的强度更高的杂质。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008227238A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008227238A
公开(公告)日：2008-09-25
申请号：JP2007064868
申请日：2007-03-14
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUZUKI TAKASHI , ISHIKO MASAYASU , SAITO JUN , NISHIWAKI TAKESHI , SAITO HIROKAZU , ONISHI TOYOKAZU
IPC分类号： H01L29/06 , H01L29/739 , H01L29/78
CPC分类号： H01L29/7397 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0847 , H01L29/1095
摘要： PROBLEM TO BE SOLVED: To improve dynamic characteristics of a semiconductor device. SOLUTION: The semiconductor device 10 is divided into a center region 10A where an IGBT is incorporated, and a terminal region 10B formed around the center region 10A. The semiconductor device 10 comprises: an n - -type drift region 26 that is continuous from the center region 10A to the terminal region 10B; a p-type body region 52 formed on the drift region 26 of the center region 10A; a p-type resurf layer 42 formed on the drift region 26 of the terminal region 10B; and an n-type semiconductor region 44 formed at least at one portion of the resurf layer 42. The semiconductor region 44 contains impurities higher in intensity than that of the drift region 26. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了改善半导体器件的动态特性。解决方案：将半导体器件10分为形成IGBT的中心区域10A和围绕中心区域10A形成的端子区域10B。半导体器件10包括：从中心区域10A连接到端子区域10B的n - SP型漂移区域26; 形成在中心区域10A的漂移区域26上的p型体区域52; 形成在端子区域10B的漂移区域26上的p型再现层42; 以及形成在再生层42的至少一部分的n型半导体区域44.半导体区域44包含比漂移区域26的强度更高的杂质。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007157799A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007157799A
公开(公告)日：2007-06-21
申请号：JP2005347341
申请日：2005-11-30
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SUZUKI TAKASHI , KAWAJI SACHIKO , ISHIKO MASAYASU , SAITO JUN , SAITO HIROKAZU , HISANAGA YUKIHIRO
IPC分类号： H01L29/78 , H01L21/336 , H01L21/76 , H01L29/06 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for improving an off withstand voltage by maintaining the charge balance of a peripheral region.
SOLUTION: The semiconductor device 1 has a center region M in which a semiconductor element is formed and the peripheral region N formed at the periphery of the center region. The device comprises a p
- -type body region 28 (impurity low-concentration semiconductor region); an insulating layer 42 that covers the surface side of the body region 28, and an electrically floating conductive member 70 while covering the surface of the insulating layer 42, at the peripheral region N.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过维持周边区域的电荷平衡来提高耐受电压的半导体装置。解决方案：半导体器件1具有其中形成半导体元件的中心区域M和形成在中心区域周边的周边区域N. 该器件包括p 型体区28（杂质低浓度半导体区）; 覆盖体区域28的表面侧的绝缘层42和覆盖绝缘层42的表面的电浮动导电构件70在周边区域N.版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007266132A Semiconductor device, manufacturing method thereof, and module provided therewith 审中-公开
标题翻译：半导体器件及其制造方法及其提供的模块
公开(公告)号：JP2007266132A
公开(公告)日：2007-10-11
申请号：JP2006086552
申请日：2006-03-27
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： KAWAJI SACHIKO , SUZUKI TAKASHI , ISHIKO MASAYASU , SAITO JUN , ONISHI TOYOKAZU , NISHIWAKI TAKESHI , SAITO HIROKAZU
IPC分类号： H01L23/34 , H01L23/36
CPC分类号： H01L24/32 , H01L2224/32225 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a vertical semiconductor device in which an ON-voltage or ON-resistance is low, and generated heat is dispersed. SOLUTION: The semiconductor device 70 is provided with a first layer 11, and a second layer 12 provided between the first layer 11 and a substrate 30. The first layer 11 has a rear surface electrode layer 71, a semiconductor layer 78 formed on the rear surface electrode layer 71, and a front surface electrode layer 88 formed on the semiconductor layer 78. A function structure configured by a plurality of kinds of semiconductor regions is incorporated into the semiconductor layer 78, and the function structure has a function of switching a current flowing between the front surface electrode layer 88 and the rear surface electrode layer 71 into a conduction state and a non-conduction state. The second layer 12 is joined to the rear surface electrode layer 71 of the first layer 11 without using solder, and at least a surface contacting the rear surface electrode layer 71 is configured of an insulator. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种导通电压或导通电阻低的分散的发热的立式半导体装置。解决方案：半导体器件70设置有第一层11和设置在第一层11和衬底30之间的第二层12.第一层11具有后表面电极层71，形成半导体层78 在后表面电极层71上形成的前表面电极层88和形成在半导体层78上的前表面电极层88.通过多个半导体区域构成的功能结构被结合到半导体层78中，并且功能结构具有将在前表面电极层88和背面电极层71之间流动的电流切换为导通状态和非导通状态。第二层12不使用焊料与第一层11的背面电极层71接合，至少与背面电极层71接触的面由绝缘体构成。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007227620A Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007227620A
公开(公告)日：2007-09-06
申请号：JP2006046640
申请日：2006-02-23
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： KAWAJI SACHIKO , SUZUKI TAKASHI , ISHIKO MASAYASU , SAITO JUN , NISHIWAKI TAKESHI , ONISHI TOYOKAZU , SAITO HIROKAZU
IPC分类号： H01L29/06 , H01L27/088 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having an excellent breakdown strength and a manufacturing method for the semiconductor device. SOLUTION: The semiconductor device 10 has a first semiconductor region having first conductive impurities, and a second semiconductor region being formed at a central region on the surface side of the first semiconductor region while containing second conductive impurities. The semiconductor device 10 further has a plurality of diffusion regions 30 and 32 being formed in a region making a round on the outside of the second semiconductor region on the surface side of the first semiconductor region, while containing second conductive impurities. In the semiconductor device 10, the island-shaped diffusion regions 30 and 32 are formed under a ranged state in at least a part of the region making a round on the outside of the second semiconductor region. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的击穿强度的半导体器件和用于半导体器件的制造方法。解决方案：半导体器件10具有第一半导体区域，其具有第一导电杂质，第二半导体区域形成在第一半导体区域的表面侧的中心区域，同时含有第二导电杂质。半导体器件10还具有多个扩散区30和32，该多个扩散区30和32形成在第一半导体区域的表面侧上的第二半导体区域的外侧上形成圆形的区域，同时包含第二导电杂质。在半导体装置10中，在第二半导体区域的外侧的区域的至少一部分的区域形成岛状扩散区域30,32。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007273794A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007273794A
公开(公告)日：2007-10-18
申请号：JP2006098497
申请日：2006-03-31
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： IKEDA TOMOHARU , SAITO HIROKAZU , SUZUKI TAKASHI
IPC分类号： H01L21/76 , H01L21/764
摘要： PROBLEM TO BE SOLVED: To propose a technique for achieving controls of size and shape or the like of a hole in a method of manufacturing a semiconductor device equipped with a semiconductor substrate provided with a trench which has the hole and is filled up with an insulating film.
SOLUTION: The semiconductor device is manufactured in processes comprising the steps of: forming singular or plural trenches of a first stage after forming a trench mask on the semiconductor substrate; forming a sidewall mask for inhibiting an oxidization of a silicon at a side wall of the trench of the first stage; forming a trench of a second stage which is obtained by extending a bottom wall of the trench of the first stage in the depth direction; forming a trench of a third stage which is obtained by extending a part uncovered by the sidewall mask out of an inner wall of the trench of the second stage in the parallel direction and the depth direction of a front surface of the semiconductor substrate; oxidizing an inner wall of the trench of the third stage; eliminating the sidewall mask and the trench mask; and locking out an opening of the trench of the third stage with the insulating film.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提出一种制造半导体器件的制造方法中的孔的尺寸和形状等的技术，该半导体器件配备有设置有具有孔并填充的沟槽的半导体衬底具有绝缘膜。解决方案：半导体器件的制造方法包括以下步骤：在半导体衬底上形成沟槽掩模之后，形成第一级的单个或多个沟槽; 形成用于抑制所述第一阶段的所述沟槽的侧壁处的硅的氧化的侧壁掩模; 形成通过在深度方向延伸第一阶段的沟槽的底壁而获得的第二阶段的沟槽; 形成第三级的沟槽，其通过将侧壁掩模未覆盖的部分在半导体衬底的前表面的平行方向和深度方向上延伸出第二级的沟槽的内壁; 氧化第三阶段的沟槽的内壁; 消除侧壁掩模和沟槽掩模; 并用绝缘膜锁定第三级的沟槽的开口。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007250600A Semiconductor device and fabrication process method 有权
标题翻译：半导体器件和制造工艺方法
公开(公告)号：JP2007250600A
公开(公告)日：2007-09-27
申请号：JP2006068466
申请日：2006-03-14
申请人： Toyota Central Res & Dev Lab Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： NISHIWAKI TAKESHI , SAITO HIROKAZU , SUZUKI TAKASHI
IPC分类号： H01L21/764 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a high breakdown voltage can be attained, while suppressing lowering of reliability, and to provide its fabrication method.
SOLUTION: In the semiconductor device 100, a trench 5 is formed on the surface side of a semiconductor substrate, and the opening of the trench 5 is covered with a laminate insulating film 3, thus covering the trench 5. Consequently, an air gap region 53 is provided in the trench 5. Since the trench 5 of the semiconductor device 100 is an air gap, dielectric constant is low, as compared with that of a trench filled with an insulating film such as an SiO
2 film. Furthermore, in the semiconductor device 100, an SiO
2 column 52 for suppressing warpage of the laminate insulating film 3 is provided in the trench 5. The SiO
2 columns 52 may be provided, at intervals where warpage of the laminate insulating film 3 can be suppressed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中可以获得高击穿电压的半导体器件，同时抑制可靠性的降低，并提供其制造方法。解决方案：在半导体器件100中，在半导体衬底的表面侧上形成沟槽5，并且用叠层绝缘膜3覆盖沟槽5的开口，从而覆盖沟槽5.因此，空隙区域53设置在沟槽5中。由于半导体器件100的沟槽5是气隙，所以与填充有诸如SiO 2的绝缘膜的沟槽相比，介电常数低膜。此外，在半导体器件100中，在沟槽5中设置用于抑制叠层绝缘膜3的翘曲的SiO 2 柱52.SiO 2 SB柱52可以是以能够抑制层压绝缘膜3的翘曲的间隔设置。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007287897A Stencil mask 审中-公开
标题翻译： STENCIL MASK
公开(公告)号：JP2007287897A
公开(公告)日：2007-11-01
申请号：JP2006112905
申请日：2006-04-17
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： NISHIWAKI TAKESHI , SAITO HIROKAZU
IPC分类号： H01L21/027 , H01J37/09 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask having a shielding layer which is not deformed easily. SOLUTION: The stencil mask 10 is provided with a shielding layer 20 having a first layer 22 provided on the side where a substrate processed is arranged, and a second layer 24 provided on the side opposite to the side where the substrate processed is arranged. An opening 30 having a profile corresponding to a predetermined area of the substrate processed is bored in the first layer 22. The second layer 24 is formed to be dispersed on the first layer 22. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有不容易变形的屏蔽层的模板掩模。解决方案：模板掩模10设置有屏蔽层20，该屏蔽层20具有设置在被处理基板的一侧的第一层22，以及设置在与被处理的基板相反的一侧的第二层24 安排。在第一层22中钻有具有对应于所处理的基板的预定区域的轮廓的开口30.第二层24形成为分散在第一层22上。（C）2008，JPO＆INPIT

10. 发明专利

JP2014162392A Vehicle side door structure 审中-公开
标题翻译：车辆侧门结构
公开(公告)号：JP2014162392A
公开(公告)日：2014-09-08
申请号：JP2013036273
申请日：2013-02-26
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： SAITO HIROKAZU
IPC分类号： B60J5/00 , B60J5/04
摘要： PROBLEM TO BE SOLVED: To obtain a vehicle side door structure which enables early detection of a lateral collision by a crash sensor.SOLUTION: A front side door 12 includes a side door body part 32 having a door outer panel 28 and a door inner panel 30. The front side door 12 is rotatably supported by a front pillar. A crash sensor 40 is attached to the door inner panel 30. An impact beam bracket 60 which transmits a collision induced load F input to the door outer panel 28 to the door inner panel 30 is provided between the door outer panel 28 and the door inner panel 30. The impact beam bracket 60 is disposed between the crash sensor 40 and a locker 16 in a vehicle side view.
摘要翻译：要解决的问题：获得能够通过碰撞传感器早期检测侧向碰撞的车辆侧门结构。解决方案：前侧门12包括具有门外板28和门内板28的侧门主体部分32 前侧门12由前支柱可旋转地支撑。碰撞传感器40安装在门内板30上。将门外板28和门内侧之间的碰撞引导载荷F传递到门外板28的撞击梁支架60设置在门外板30上。撞击梁支架60在车辆侧视图中设置在碰撞传感器40和储物柜16之间。

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