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1. 发明专利

JP2010062253A Semiconductor device, method of manufacturing the same, power element, and stress relaxing material 审中-公开
标题翻译：半导体器件，其制造方法，功率元件和应力释放材料
公开(公告)号：JP2010062253A
公开(公告)日：2010-03-18
申请号：JP2008224815
申请日：2008-09-02
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： YANAGIUCHI AKIHIRO , HOTTA KOJI , SUZUKI TOMOKIYO , SAITO JUN , USUI MASANORI , ISHIKO MASAYASU
IPC分类号： H01L23/12
CPC分类号： H01L2224/48091 , H01L2224/4846 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that relaxes the stress generated at a solder joint between a power element and an insulating substrate and a brazing part between the insulating substrate and a stress relaxing material without practically deteriorating the heat dissipation from the power element, and to provide a method of manufacturing the same, the power element, and the stress relaxing material. SOLUTION: First, a cooler 40, a stress relaxing material 30, and an insulating substrate 20 are brazed. Then, on an electrode 22 in the upside of the figure of the insulating substrate 20, solder foil 90 and a power element 10 are heated in a solder melting furnace in such a state that the power element 10 is mounted to be the top. The power element 10 has a protrusion 11 formed on the backside. Thus, the power element 10 is lowered such that the protrusion 11 pushes away the solder in the melted state. Thereby, the protrusion 11 of the power element 10 divides the solder 90 in the melted state. Then, the solder is solidified in such a state that the solder 90 is divided. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其放宽在功率元件和绝缘基板之间的焊接接头处产生的应力和绝缘基板与应力松弛材料之间的钎焊部分，而不会使散热从功率元件，并且提供其制造方法，功率元件和应力松弛材料。解决方案：首先，将冷却器40，应力松弛材料30和绝缘基板20钎焊。然后，在绝缘基板20的图的上侧的电极22上，在功率元件10安装为顶部的状态下，在焊料熔化炉中加热焊锡箔90和功率元件10。功率元件10具有形成在背面的突起11。因此，功率元件10下降，使得突起11在熔化状态下推开焊料。由此，功率元件10的突起11将焊料90分割成熔融状态。然后，焊料在焊料90被分割的状态下固化。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009283861A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009283861A
公开(公告)日：2009-12-03
申请号：JP2008137014
申请日：2008-05-26
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , ISHIKO MASAYASU , SUZUKI TOMOKIYO , HOTTA KOJI , SAITO JUN , YANAGIUCHI AKIHIRO
IPC分类号： H01L23/42 , H02M7/48
CPC分类号： H01L2224/48491 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of lowering the cooling ability in a semiconductor device with the output power amount varying to time, which needs to determine the specification of a cooler taking into consideration of the case of generating the maximum heat by operation with the maximum output. SOLUTION: A melting substance 8 is sealed in the semiconductor device 20. The melting substance selected is one capable of obtaining the following phenomenon. The melting substance is solid at the time of maintaining a first output power amount set in a small output range in a rated fluctuation range and it is molten at the time of maintaining a second output power amount set in a large output range in the rated fluctuation range. The melting point of the melting substance is set at or lower than the maximum temperature allowing normal operation of the semiconductor device. The melting substance 8 is disposed on the opposite side of an exothermic part (semiconductor chip 14) with respect to a substrate 18. The melting substance 8 prevents a solder layer 16 of the semiconductor device 20 from overheating to the melting point of the melting substance or higher than that. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以随时间变化的输出功率量降低半导体器件的冷却能力的技术，需要考虑到产生最大值的情况来确定冷却器的规格热量通过最大输出运行。解决方案：熔融物质8被密封在半导体器件20中。所选择的熔化物质是能够获得以下现象的物质。在保持在额定变动范围内设定在小输出范围内的第一输出功率量时熔融物质是固体，并且在维持设定在大额定波动的大输出范围内的第二输出功率量时熔化物质范围。熔化物质的熔点设定为或低于允许半导体器件正常工作的最高温度。熔化物质8相对于基板18设置在放热部（半导体芯片14）的相对侧。熔化物质8防止半导体器件20的焊料层16过热到熔化物质的熔点或更高。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009252977A Module formed by bonding low thermal expansion coefficient material and high thermal expansion coefficient material 审中-公开
标题翻译：通过结合低热膨胀系数材料和高热膨胀系数材料形成的模块
公开(公告)号：JP2009252977A
公开(公告)日：2009-10-29
申请号：JP2008098631
申请日：2008-04-04
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , ISHIKO MASAYASU , SAITO JUN , SUZUKI TOMOKIYO , HOTTA KOJI , YANAGIUCHI AKIHIRO
IPC分类号： H01L23/12
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To solve the problem that when a component containing a low thermal expansion coefficient material as a main material is bonded to a component containing a high thermal expansion coefficient material as a main material to form a module, a large thermal stress is applied to a bonding material such as solder by the difference in thermal expansion between both the materials when exposed to heat cycle and a junction portion is easily damaged. SOLUTION: A thermal expansion coefficient gradually increasing layer 10d containing a high thermal expansion coefficient material 10b that increases the content toward a junction surface 10c is formed on the junction surface 10c of a component 10 containing a low thermal expansion coefficient material as a main material. Alternatively, a thermal expansion coefficient gradually decreasing layer containing a low thermal coefficient material that increases the content toward a junction surface is formed on the junction surface of a component containing a high thermal expansion coefficient material as a main material. When the layer having a thermal expansion coefficient gradually increasing the content toward the junction surface 10c is formed on the junction surface 10c side of the component 10 containing the low thermal expansion coefficient material as a main material, junction is not necessarily executed on junction surfaces having largely different thermal expansion coefficients. Thus, damage can be prevented on the junction surface even if subjected to exposure in a severe heat cycle. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了解决以含有低热膨胀系数材料为主要成分的成分与包含高热膨胀系数材料作为主要材料的成分结合形成模块的问题，当暴露于热循环时，由于两种材料之间的热膨胀差导致热应力作用于诸如焊料的接合材料，并且接合部分容易损坏。解决方案：在包含低热膨胀系数材料的部件10的接合表面10c上形成包含增加朝向接合面10c的含量的高热膨胀系数材料10b的层10d的逐渐增加的热膨胀系数，作为主要材料。或者，在包含高热膨胀系数材料作为主要材料的部件的接合表面上形成包含增加向接合面的含量的低热系数材料的热膨胀系数逐渐降低的层。当在包含低热膨胀系数材料作为主要材料的部件10的接合表面10c侧上形成热膨胀系数向结合面10c逐渐增加的层时，不必在具有在很大程度上不同的热膨胀系数。因此，即使在严重的热循环中经受曝光，也可以防止接合面上的损伤。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009302261A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009302261A
公开(公告)日：2009-12-24
申请号：JP2008154534
申请日：2008-06-12
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , ISHIKO MASAYASU , HOTTA KOJI , SUZUKI TOMOKIYO , SAITO JUN , YANAGIUCHI AKIHIRO
IPC分类号： H01L21/60 , H01L23/34 , H01L29/06
CPC分类号： H01L24/05 , H01L24/03 , H01L2224/04042 , H01L2224/05624 , H01L2224/45 , H01L2224/45124 , H01L2224/48 , H01L2224/48091 , H01L2224/4847 , H01L2224/48491 , H01L2224/48724 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2224/8592 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To suppress a phenomenon that when heat is generated locally at a bonding point, the heat is efficiently conducted over a wide range on a surface of a semiconductor chip and the bonding point is locally overheated to deteriorate bonding strength between a wire and a surface electrode. SOLUTION: A coating layer 20 consisting of a material having higher thermal conductivity than the surface electrode 16 where the wire 22 is bonded, is formed on a surface of the surface electrode 16. When the surface of the surface electrode 16 where the wire 22 is bonded is coated with the material which has the higher heat thermal conductivity than the surface electrode 16, heat is efficiently conducted over a wide range of the surface of a semiconductor chip 14 to prevent the phenomenon that the bonding point is locally overheated. Alternatively, the wire may be bonded to the surface electrode through the surface coating layer. In this case, the coating layer thicker than the surface electrode is formed of the material which has the higher thermal conductivity than the surface electrode, on the surface of the surface electrode. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题为了抑制在接合点局部产生热量的现象，在半导体芯片的表面上有效地在宽范围内传导热量，并且接合点局部过热，从而劣化接合强度在电线和表面电极之间。解决方案：在表面电极16的表面上形成由表面电极16的表面形成由具有比接合线22的表面电极16更高的导热性的材料构成的涂层20.当表面电极16的表面用与表面电极16相比热导率高的材料涂布导线22，在半导体芯片14的表面的宽范围内有效地传导热量，以防止接合点局部过热的现象。或者，线可以通过表面涂层结合到表面电极。在这种情况下，比表面电极厚的涂层由具有比表面电极更高的热导率的材料形成在表面电极的表面上。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009253025A Module formed by bonding semiconductor device to substrate by metal layer 有权
标题翻译：通过金属层将半导体器件接合形成的模块
公开(公告)号：JP2009253025A
公开(公告)日：2009-10-29
申请号：JP2008099271
申请日：2008-04-07
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , ISHIKO MASAYASU , SAITO JUN , SUZUKI TOMOKIYO , HOTTA KOJI , YANAGIUCHI AKIHIRO
IPC分类号： H01L21/52 , H01L21/02
CPC分类号： H01L24/32 , H01L2924/10158
摘要： PROBLEM TO BE SOLVED: To improve durability by preventing a large stress from acting to a metal layer 14 for bonding a semiconductor element 12 to a substrate 16.
SOLUTION: The thickness of a peripheral region of the semiconductor device 12 is made to be thinner than the thickness of a center region of the semiconductor device 12. The thickness of the semiconductor device in the peripheral region where a large stress develops on the metal layer 14 is reduced, so that a phenomenon in which a large stress repeatedly acts to the metal layer 14 can be prevented, and the durability of the metal layer 14 can be improved. Specifically, the thickness is reduced on the rear surface of the semiconductor device 12 so that the thickness of the metal layer 14 can be increased on the peripheral region, thereby also decreasing the stress acting to the metal layer 14 to improve the durability.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过防止大的应力作用于用于将半导体元件12接合到基板16的金属层14来提高耐久性。解决方案：半导体器件12的周边区域的厚度被制成为比半导体器件12的中心区域的厚度薄。在金属层14上产生大应力的周边区域中的半导体器件的厚度减小，使得存在大的应力可以防止对金属层14的反复作用，能够提高金属层14的耐久性。具体地说，在半导体器件12的后表面上的厚度减小，从而能够在周边区域增加金属层14的厚度，从而也降低作用于金属层14的应力，提高耐久性。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009224609A Module, and method of manufacturing the same 审中-公开
标题翻译：模块及其制造方法
公开(公告)号：JP2009224609A
公开(公告)日：2009-10-01
申请号：JP2008068391
申请日：2008-03-17
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： USUI MASANORI , YAMADA YASUSHI , ISHIKO MASAYASU , YANAGIUCHI AKIHIRO , SUZUKI TOMOKIYO , HOTTA KOJI , SAITO JUN
IPC分类号： H01L21/52 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To provide a structure which is improved in reliability when a pair of metal layers differing in coefficient of thermal expansion are connected to each other with a state of a high coefficient of thermal conductivity. SOLUTION: At least surfaces of the respective metal layers are made of Cu. They are connected to each other with a plurality of columnar substances 18. Each of the columnar substances 18 extends in a columnar shape from one metal layer to the other metal layer and the plurality of columnar substances 18 are distributed within a formation range of the metal layers. At least end surfaces of the respective columnar substances 18 are made of Cu. When a layer of Sn is interposed between metal layer Cu and Cu of the columnar substances 18 and heated, Cu and Sn are alloyed, so that the metal layers and the end surfaces of the respective columnar substances 18 are connected with the SnCu alloy present between them. Even when the columnar substances 18 are arranged to high density to increase the heat conductivity, the durability of the connection portion is high. The connection strength by the SnCu is higher than that by solder. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在热膨胀系数不同的一对金属层以高导热系数的状态彼此连接时提高可靠性的结构。解决方案：各个金属层的至少表面由Cu制成。它们通过多个柱状物质18彼此连接。每个柱状物质18从一个金属层延伸到另一个金属层的柱状，并且多个柱状物质18分布在金属的形成范围内层。各柱状物质18的至少端面由Cu构成。当Sn层被插入在柱状物质18的金属层Cu和Cu之间并加热时，Cu和Sn合金化，使得各个柱状物质18的金属层和端面与SnCu合金之间存在他们。即使柱状物质18被布置成高密度以增加导热性，连接部分的耐久性也高。 SnCu的连接强度高于焊料的连接强度。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2014006122A Object detector 审中-公开
标题翻译：对象检测器
公开(公告)号：JP2014006122A
公开(公告)日：2014-01-16
申请号：JP2012141248
申请日：2012-06-22
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： EIMIYA KIYOMI , YANAGIUCHI AKIHIRO , SATO HIROSHI
IPC分类号： G01S13/66 , G01S7/02 , G01S13/93
摘要： PROBLEM TO BE SOLVED: To improve accuracy in tracking a target in a case with a large difference between a detection point and a tracking point of a tracking filter.SOLUTION: An object detector 100 for detecting an object in the circumference of a vehicle by updating a tracking point of an object includes: position detection means 11 for detecting an object position; position prediction means for predicting the predicted position of an object on the basis of a tracking point and an object movement rule (e.g. S300, a formula (1)); tracking point updating means for updating a tracking point on the basis of an object position detected by the position detection means and a predicted position predicted by the position prediction means (e.g. S500, a formula (5)); and correction means for correcting an object position detected by the position detection means with the use of distance information of an object detected by the position detection means when an object detected by the position detection means exists within a first predetermined range from a tracking point (e.g. S504, a dummy detection point generation unit 22). The tracking point updating means updates a tracking point on the basis of an object position corrected by the correction means and a predicted position predicted by the position prediction means.
摘要翻译：要解决的问题：在跟踪滤波器的检测点和跟踪点之间的差异较大的情况下提高跟踪目标的精度。解决方案：一种物体检测器100，用于通过更新来检测车辆周围的物体物体的跟踪点包括：用于检测物体位置的位置检测装置11; 位置预测装置，用于基于跟踪点和对象移动规则（例如，S300，公式（1））来预测对象的预测位置; 跟踪点更新装置，用于基于由位置检测装置检测到的对象位置和由位置预测装置预测的预测位置（例如，S500，公式（5））来更新跟踪点; 以及校正装置，用于当由位置检测装置检测到的物体存在于来自跟踪点的第一预定范围内时，通过使用由位置检测装置检测到的物体的距离信息来校正由位置检测装置检测到的物体位置。 S504，虚拟检测点生成单元22）。跟踪点更新装置基于由校正装置校正的对象位置和由位置预测装置预测的预测位置来更新跟踪点。

8. 发明专利

JP2011220740A Gnss receiving device and positioning method 审中-公开
标题翻译： GNSS接收装置和定位方法
公开(公告)号：JP2011220740A
公开(公告)日：2011-11-04
申请号：JP2010087949
申请日：2010-04-06
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： YAMAMOTO TAKUYA , KADOWAKI YOSHINORI , YANAGIUCHI AKIHIRO , SATO HIROSHI
IPC分类号： G01S19/22 , G01S19/37
CPC分类号： G01S19/22 , G01S19/37 , H04B1/7075 , H04B2201/70715
摘要： PROBLEM TO BE SOLVED: To improve positioning rate while reducing an influence of multi-pass.SOLUTION: A GNSS receiving device comprises: a first correlation peak detection unit for detecting a peak of a correlation value between a positioning signal and a replica signal of a C/A code; a second correlation peak detection unit for detecting, by multipath error reduction technology, a peak of a correlation value between a positioning signal and a replica signal of a C/A code; a signal intensity detection unit for detecting the signal intensity of the positioning signal; a changeover unit for inputting the positioning signal to the second correlation peak detection unit when the signal intensity is equal to or greater than a predetermined threshold value and to the first correlation peak detection unit when the signal intensity is less than the predetermined threshold value; a pseudo-distance calculation unit for calculating a pseudo-distance based on the correlation peak detected by the first correlation peak detection unit or the second correlation peak detection unit; and a positioning calculation unit for calculating a position of the GNSS receiving device based on the pseudo-distance.
摘要翻译：要解决的问题：提高定位速度，同时减少多通道的影响。解决方案：GNSS接收装置包括：第一相关峰值检测单元，用于检测定位信号和C / A码的复制信号之间的相关值的峰值; 第二相关峰值检测单元，用于通过多径误差减少技术检测定位信号和C / A码的复制信号之间的相关值的峰值; 信号强度检测单元，用于检测定位信号的信号强度; 当所述信号强度等于或大于预定阈值时，将所述定位信号输入到所述第二相关峰值检测单元，以及当所述信号强度小于所述预定阈值时，将所述定位信号输入到所述第一相关峰值检测单元; 伪距离计算单元，用于基于由第一相关峰值检测单元或第二相关峰值检测单元检测到的相关峰值来计算伪距离; 以及定位计算单元，用于基于伪距离计算GNSS接收装置的位置。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2010245302A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010245302A
公开(公告)日：2010-10-28
申请号：JP2009092568
申请日：2009-04-07
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： YANAGIUCHI AKIHIRO , SUZUKI TOMOKIYO , USUI MASANORI , ISHIKO MASAYASU
IPC分类号： H01L23/36 , H01L23/12
CPC分类号： H01L24/32 , H01L2224/32225 , H01L2224/4847 , H01L2224/73204 , H01L2224/83385 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a means of enhancing the crack resistance of a metal joint of a semiconductor device. SOLUTION: The semiconductor device 100 includes a metal joint structure between a semiconductor element 10 and an insulative substrate 40. A first surface conductive layer 30 is provided on a first surface, on which the semiconductor element 10 is mounted, of the insulative substrate 40. The first surface conductive layer 30 has a central conductive region 32, with properties different from those of the peripheral region, in a portion corresponding to a central region, in a planar direction of the semiconductor element 10. The center conductive region includes a material having, for example, higher mechanical strength than that of the peripheral region. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高半导体器件的金属接头的抗裂性的方法。解决方案：半导体器件100包括在半导体元件10和绝缘基板40之间的金属接合结构。第一表面导电层30设置在其上安装半导体元件10的第一表面上，绝缘的第一表面导电层30在半导体元件10的平面方向上具有与中心区域对应的部分中具有不同于外围区域的特性的中心导电区域32.中心导电区域包括例如具有比周边区域更高的机械强度的材料。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2006317225A Satellite radio waves receiver 审中-公开
标题翻译：卫星无线电波接收器
公开(公告)号：JP2006317225A
公开(公告)日：2006-11-24
申请号：JP2005138615
申请日：2005-05-11
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： KADOWAKI YOSHINORI , USAMI TOMOHIRO , YANAGIUCHI AKIHIRO , FUJITA YUKIMICHI
IPC分类号： G01S19/31 , G01S19/33 , H04B7/155
摘要： PROBLEM TO BE SOLVED: To provide a satellite radio waves receiver which can reduce positioning time at a cold start.
SOLUTION: The satellite radio waves receiver for receiving radio waves radiated from a satellite of a positioning system comprises a quasi-zenith satellite search means for searching for a quasi-zenith satellite and a non-quasi-zenith satellite search means for searching for a non-quasi-zenith satellite after searching for the quasi-zenith satellite by the quasi-zenith satellite search means.
COPYRIGHT: (C)2007,JPO&INPIT

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