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    • 1. 发明专利
    • Memory system
    • 记忆系统
    • JP2009237602A
    • 2009-10-15
    • JP2008079016
    • 2008-03-25
    • Toshiba CorpToshiba Memory Systems Co Ltd東芝メモリシステムズ株式会社株式会社東芝
    • MIYASHITA TOSHIYUKIOSHIMA TAKASHIMURAKAMI TETSUYA
    • G06F12/16
    • PROBLEM TO BE SOLVED: To provide a memory system improved in operational reliability. SOLUTION: This memory system is provided with: a semiconductor memory 3 with a non-volatile memory cell for storing data; and a backup control circuit 6 for supplying a backup power source 2 and a first external power source (power source C). When the first external power source is interrupted during the write-in of data in the memory cell of the semiconductor memory 3, the backup control circuit 6 supplies a voltage applied from the backup power source 2 to the semiconductor memory 3, and stops the supply of the voltage to be applied from the backup power source 2 after the end of the write-in of the data. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供改进的操作可靠性的存储器系统。 解决方案:该存储器系统具有:具有用于存储数据的非易失性存储单元的半导体存储器3; 以及用于提供备用电源2和第一外部电源(电源C)的备用控制电路6。 当在半导体存储器3的存储单元中写入数据期间第一外部电源中断时,备用控制电路6将从备用电源2施加的电压提供给半导体存储器3,并停止供应 在写入数据结束之后从备用电源2施加的电压。 版权所有(C)2010,JPO&INPIT
    • 4. 发明专利
    • Memory system
    • 记忆系统
    • JP2010152542A
    • 2010-07-08
    • JP2008328465
    • 2008-12-24
    • Toshiba CorpToshiba Information Systems (Japan) Corp東芝情報システム株式会社株式会社東芝
    • MORITA TAKEOAOKI AKIRAMURAKAMI TETSUYA
    • G06F12/16
    • G11C7/02G06F11/073G06F11/076G06F11/1068G06F12/0246G06F2212/7209G11C7/1006
    • PROBLEM TO BE SOLVED: To provide a memory system for reducing the frequency of generation of an error as much as possible in performing access to a DRAM.
      SOLUTION: A memory system includes: a first nonvolatile memory 2; a second volatile memory 4; and a transfer controller 3 for transferring data between a host device and the first memory 2 through the second memory 4. The transfer controller 3 includes error count means 14 and 15 for calculating a parity error in inputting/outputting data to each divided region for each division unit obtained by dividing the storage area of the second memory 4 into a plurality of regions, and for counting the number of times of accumulation of the parity error; and a means for making the divided region where the count value obtained by the error count means exceeds a prescribed number of times a use impossible state.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种用于在执行对DRAM的访问时尽可能地减少错误产生的频率的存储器系统。 解决方案:存储器系统包括:第一非易失性存储器2; 第二易失性存储器4; 以及用于通过第二存储器4在主机设备和第一存储器2之间传送数据的传送控制器3.传送控制器3包括差错计数装置14和15,用于计算每个分割区域的数据输入/输出中的奇偶校验错误 通过将第二存储器4的存储区域划分为多个区域而获得的划分单元,并且用于对奇偶校验错误的累积次数进行计数; 以及用于使得由误差计数装置获得的计数值超过使用不可能状态的规定次数的分割区域的装置。 版权所有(C)2010,JPO&INPIT
    • 7. 发明专利
    • Memory card, semiconductor device, and control method for memory card
    • 存储卡,半导体器件和存储卡的控制方法
    • JP2006120082A
    • 2006-05-11
    • JP2004309751
    • 2004-10-25
    • Toshiba Corp株式会社東芝
    • MURAKAMI TETSUYAOSHIMA TAKASHI
    • G06F11/00G06F9/50G06K19/07
    • G11C16/16G11C16/0483G11C16/10
    • PROBLEM TO BE SOLVED: To streamline functional modifications to a program stored in a ROM. SOLUTION: A transfer function 41, when receiving a vendor command sent from a host 20, acquires modified firmware and an interrupt vector included in the vendor command and writes them into a predetermined area in a central management block 44 of a flash memory 3. A load function 42, in response to a trigger signal corresponding to an event indicating, for example, power supply from a power part 32 of the host 20, expands not only firmware 40 stored in the ROM 9 but also the modified firmware 45 and interrupt vector 46 stored in the central management block 44 of the flash memory 3 on a RAM 10 and notifies the expansion to a CPU 8 and the like as an interrupt signal. The CPU 8 receiving the interrupt signal executes a corresponding function in the firmware 40 or the modified firmware 45 according to information (for example, address on RAM area) indicated by the interrupt vector present on the RAM 10. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:简化对存储在ROM中的程序的功能修改。 解决方案:传送函数41在接收到从主机20发送的供应商命令时,获取修改的固件和包含在供应商命令中的中断向量,并将它们写入闪速存储器的中央管理块44中的预定区域 加载功能42响应于对应于指示例如来自主机20的电源部分32的电源的事件的触发信号,不仅扩展存储在ROM9中的固件40,而且还扩展了修改的固件45 以及存储在闪速存储器3的中央管理块44中的RAM10上的中断向量46,并将该扩展通知给CPU8等作为中断信号。 接收到中断信号的CPU8根据存在于RAM10上的中断向量指示的信息(例如,RAM区域上的地址),在固件40或修正固件45中执行相应的功能。 )2006年,日本特许厅和NCIPI
    • 9. 发明专利
    • Nonvolatile memory card
    • 非挥发性记忆卡
    • JP2009146499A
    • 2009-07-02
    • JP2007322361
    • 2007-12-13
    • Toshiba Corp株式会社東芝
    • MURAKAMI TETSUYANARA NOBUYOSHIIMAMIYA KENICHI
    • G11C16/06G06K19/07G11C16/04
    • G11C5/143
    • PROBLEM TO BE SOLVED: To provide a nonvolatile memory card in which a problem caused by detection errors between respective voltage detectors never be caused in the nonvolatile memory card and its controller, and circuit scale can be reduced. SOLUTION: The nonvolatile memory card 100A is provided with a nonvolatile memory 110A and its controller 120A, the nonvolatile memory 110A and the controller 120A are provided with a first logic section 111 and a second logic section 121 corresponding to them, the nonvolatile memory 110A is provided with a voltage detector 112b for detecting power source voltage supplied to the nonvolatile memory and the controller from the outside, and an output of the detection is supplied to the first logic section of the nonvolatile memory to which the voltage detector is provided, while it can be supplied to the second logic section of the controller or/and a logic section 111' of at least one added nonvolatile memory 110B through a buffer amplifier simultaneously. COPYRIGHT: (C)2009,JPO&INPIT
    • 解决的问题:提供一种非易失性存储卡,其中在非易失性存储卡及其控制器中不会引起各个电压检测器之间的检测误差引起的问题,并且可以减小电路规模。 解决方案:非易失性存储卡100A设有非易失性存储器110A及其控制器120A,非易失性存储器110A和控制器120A设置有与其对应的第一逻辑部分111和第二逻辑部分121,非易失性存储器 存储器110A设置有用于检测从外部提供给非易失性存储器和控制器的电源电压的电压检测器112b,并且将检测的输出提供给提供有电压检测器的非易失性存储器的第一逻辑部分 同时可以通过缓冲放大器将其提供给控制器的第二逻辑部分和/或至少一个相加的非易失性存储器110B的逻辑部分111'。 版权所有(C)2009,JPO&INPIT