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1. 发明专利

JP2006107049A Semiconductor device and memory card provided with the semiconductor device 审中-公开
标题翻译：具有半导体器件的半导体器件和存储卡
公开(公告)号：JP2006107049A
公开(公告)日：2006-04-20
申请号：JP2004291661
申请日：2004-10-04
申请人： Toshiba Corp , 株式会社東芝
发明人： NARA NOBUYOSHI
IPC分类号： G06K19/07 , G06F12/00 , G06F12/06
CPC分类号： G06K19/07
摘要： PROBLEM TO BE SOLVED: To report prescribed information to the outside before reaching a standby state. SOLUTION: A substrate 2 is provided with a plurality of terminals. A controller 4 is provided on the substrate 2, is provided with a plurality of terminals 30, performs an interface processing with the outside and can control a nonvolatile semiconductor memory. In the constitution, depending on whether or not each of the terminals provided on the controller 4 is electrically connected to each of the terminals on the substrate 2 respectively, information to be reported to the outside is determined. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在达到待机状态之前向外部报告规定的信息。解决方案：基板2设置有多个端子。控制器4设置在基板2上，设置有多个端子30，与外部进行接口处理并且可以控制非易失性半导体存储器。在该结构中，根据设置在控制器4上的每个端子是否分别与基板2上的每个端子电连接，来确定要向外部报告的信息。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2009146499A Nonvolatile memory card 审中-公开
标题翻译：非挥发性记忆卡
公开(公告)号：JP2009146499A
公开(公告)日：2009-07-02
申请号：JP2007322361
申请日：2007-12-13
申请人： Toshiba Corp , 株式会社東芝
发明人： MURAKAMI TETSUYA , NARA NOBUYOSHI , IMAMIYA KENICHI
IPC分类号： G11C16/06 , G06K19/07 , G11C16/04
CPC分类号： G11C5/143
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory card in which a problem caused by detection errors between respective voltage detectors never be caused in the nonvolatile memory card and its controller, and circuit scale can be reduced. SOLUTION: The nonvolatile memory card 100A is provided with a nonvolatile memory 110A and its controller 120A, the nonvolatile memory 110A and the controller 120A are provided with a first logic section 111 and a second logic section 121 corresponding to them, the nonvolatile memory 110A is provided with a voltage detector 112b for detecting power source voltage supplied to the nonvolatile memory and the controller from the outside, and an output of the detection is supplied to the first logic section of the nonvolatile memory to which the voltage detector is provided, while it can be supplied to the second logic section of the controller or/and a logic section 111' of at least one added nonvolatile memory 110B through a buffer amplifier simultaneously. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种非易失性存储卡，其中在非易失性存储卡及其控制器中不会引起各个电压检测器之间的检测误差引起的问题，并且可以减小电路规模。解决方案：非易失性存储卡100A设有非易失性存储器110A及其控制器120A，非易失性存储器110A和控制器120A设置有与其对应的第一逻辑部分111和第二逻辑部分121，非易失性存储器存储器110A设置有用于检测从外部提供给非易失性存储器和控制器的电源电压的电压检测器112b，并且将检测的输出提供给提供有电压检测器的非易失性存储器的第一逻辑部分同时可以通过缓冲放大器将其提供给控制器的第二逻辑部分和/或至少一个相加的非易失性存储器110B的逻辑部分111'。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JPH09270690A DRIVE VOLTAGE CONTROL CIRCUIT 失效
公开(公告)号：JPH09270690A
公开(公告)日：1997-10-14
申请号：JP7747596
申请日：1996-03-29
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： NISHIMAKI HARUYOSHI , NARA NOBUYOSHI
IPC分类号： G06F1/32 , G06F1/08 , G11C5/14 , G11C11/407 , H03K5/19 , H03K19/00
摘要： PROBLEM TO BE SOLVED: To realize low power consumption with respect to a circuit in the operating state by revising a drive voltage applied to an operating circuit in response to a frequency of a system clock. SOLUTION: An internal cell area 101 (equivalent to a work area) and an F/V voltage drop circuit 102 (equivalent to drive voltage control circuit) are provided in an integrated circuit 100. Then the F/V voltage drop circuit 102 receives a system clock CLK and a constant voltage power supply V0 from the outside of the integrated circuit 100. Furthermore, the internal cell area 101 is made up of a CMOS transistor(TR) or the like and receives the system clock CLK and an output voltage V1 of the F/V voltage drop circuit 102. The internal cell area 101 uses the output voltage V1 of the F/V voltage drop circuit 102 and is operated by an operating frequency provided by the system clock CLK.

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